公开(公告)号：US08344423B2

公开(公告)日：2013-01-01

申请号：US13360275

申请日：2012-01-27

申请人： Yasuhiro Uemoto ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Yasuhiro Uemoto ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/66

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7783

摘要： A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.

摘要翻译： 氮化物半导体器件包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。 位于栅电极下方的第三氮化物半导体层的区域形成有具有p型导电性的控制区域，以及位于栅电极与源电极和漏极之间的第三氮化物半导体层的区域 形成有具有比控制区域更高的电阻的高电阻区域。

公开(公告)号：US07656010B2

公开(公告)日：2010-02-02

申请号：US11898958

申请日：2007-09-18

申请人： Tomohiro Murata ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Tomohiro Murata ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L23/58

CPC分类号： H01L29/7787 ,  H01L23/367 ,  H01L23/3677 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.

摘要翻译： 半导体器件包括：半导体层; 形成在与半导体层接触的半导体层上的至少一个电极; 以及覆盖半导体层和电极的顶表面的至少一部分的钝化膜，以保护半导体层并由多个子膜形成。 钝化膜包括由氮化铝制成的第一子膜。

公开(公告)号：US07501068B2

公开(公告)日：2009-03-10

申请号：US11109864

申请日：2005-04-20

申请人： Atsuhiko Kanda ,  Naohiro Tsurumi ,  Kazuhiro Yahata ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Atsuhiko Kanda ,  Naohiro Tsurumi ,  Kazuhiro Yahata ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： C23F1/00

CPC分类号： H03H3/02 ,  H03H9/02102 ,  H03H9/173 ,  H03H9/174 ,  H03H9/175 ,  H03H2003/021 ,  H03H2003/023 ,  H03H2003/025 ,  Y10T29/42 ,  Y10T156/10

摘要： A method for manufacturing a resonator of the present invention includes the steps of (a) forming a resonator film including a piezoelectric film made of piezoelectric material and (b) preparing a resonator substrate for supporting the resonator film. The method further comprises the step of (c) bonding the resonator film formed in the step (a) and the resonator substrate prepared in the step (b).

摘要翻译： 制造本发明的谐振器的方法包括以下步骤：（a）形成包括由压电材料制成的压电膜的谐振膜，（b）制备用于支撑谐振膜的谐振器基片。 该方法还包括以下步骤：（c）将步骤（a）中形成的谐振膜和步骤（b）中制备的谐振器基片接合。

公开(公告)号：US07375407B2

公开(公告)日：2008-05-20

申请号：US11271833

申请日：2005-11-14

申请人： Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/47

CPC分类号： H01L29/66143 ,  H01L29/872

摘要： A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance than the first semiconductor layer and the second semiconductor layer. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer in a portion surrounded with the high-resistance region.

摘要翻译： 肖特基势垒二极管包括依次形成在衬底上的第一半导体层和第二半导体层; 以及形成在第一半导体层和第二半导体层中并且具有比第一半导体层和第二半导体层更高的电阻的高电阻区域。 彼此间隔开的肖特基电极和欧姆电极在被高电阻区域包围的部分中形成在第二半导体层上。

公开(公告)号：US20070170463A1

公开(公告)日：2007-07-26

申请号：US11647218

申请日：2006-12-29

申请人： Hiroaki Ueno ,  Manabu Yanagihara ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Hiroaki Ueno ,  Manabu Yanagihara ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L31/00

CPC分类号： H01L29/7783 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/432 ,  H01L29/452 ,  H01L29/7787

摘要： A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.

摘要翻译： 氮化物半导体器件包括：由第一氮化物半导体制成的第一半导体层; 第二半导体层，其形成在第一半导体层的主表面上并且由具有比第一氮化物半导体的带隙宽的第二氮化物半导体构成; 选择性地形成在所述第二半导体层的上部并且由上述第二半导体层的上部制成的具有p型导电性的第三氮化物半导体的控制层; 源极和漏极，形成在控制层的相应侧上的第二半导体层上; 形成在所述控制层上的栅电极; 以及形成在与所述主表面相对的所述第一半导体层的表面上的第四半导体层，所述第四半导体层相对于所述第一氮化物半导体具有价带中的势垒，并且由包含铝的第四氮化物半导体制成。

公开(公告)号：US07064359B2

公开(公告)日：2006-06-20

申请号：US10912567

申请日：2004-08-06

申请人： Hidetoshi Ishida ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Hidetoshi Ishida ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/42316 ,  H01L29/2003 ,  H01L29/7787 ,  Y10S257/918

摘要： A switching semiconductor device includes a first compound layer formed on a single crystal substrate which includes silicon carbide or sapphire, and including a general formula InxGa1-xN, where 0≦x≦1; a second compound layer formed on the first compound layer, and including a general formula InyALzGa1-y-zN, where 0≦y≦1 and 0

摘要翻译： 开关半导体器件包括形成在包括碳化硅或蓝宝石的单晶衬底上的第一复合层，并且包括通式为N 1 Ga 1-x N，其中 0 <= x <= 1; 形成在第一化合物层上的第二化合物层，并且包含通式为Y 1，Y z，Ga 1-y z N，其中0 < = y <= 1，0

公开(公告)号：US20060108659A1

公开(公告)日：2006-05-25

申请号：US11272878

申请日：2005-11-15

申请人： Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L31/07

CPC分类号： H01L29/872 ,  H01L21/26506 ,  H01L27/0605 ,  H01L27/0814 ,  H01L29/0692 ,  H01L29/417 ,  H01L29/66143

摘要： A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a semiconductor substrate with a buffer layer formed between the first and second semiconductor layers and the semiconductor substrate. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer, and a back face electrode is formed on the back face of the semiconductor substrate. The Schottky electrode or the ohmic electrode is electrically connected to the back face electrode through a via penetrating through at least the buffer layer.

公开(公告)号：US20060038636A1

公开(公告)日：2006-02-23

申请号：US11194460

申请日：2005-08-02

申请人： Naohiro Tsurumi ,  Kazuhiro Yahata ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda ,  Atsuhiko Kanda

发明人： Naohiro Tsurumi ,  Kazuhiro Yahata ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda ,  Atsuhiko Kanda

IPC分类号： H03H9/58

CPC分类号： H03H9/173 ,  H03H3/04 ,  H03H9/172 ,  H03H9/564 ,  H03H2003/021

摘要： An acoustic resonator includes: a substrate; a resonator film which is supported above the main surface of the substrate and includes a piezoelectric film and a pair of a top electrode and a bottom electrode which are formed on part of the top surface and part of the bottom surface of the piezoelectric film, respectively, to face each other via the piezoelectric film; and a support which is formed on the main surface of the substrate to support the resonator film from below. A resonance cavity is provided in part of a region between the substrate and the resonator film below at least a portion of part of the resonator film where the top electrode and the bottom electrode coincide with each other and an isolation cavity is provided in other part of said region where the support and the resonance cavity do not exist.

摘要翻译： 声谐振器包括：基板; 一种谐振膜，其被支撑在基板的主表面上方，分别包括压电膜和一对顶电极和底电极，它们分别形成在压电膜的顶表面和底表面的一部分上 通过压电膜相互面对; 以及形成在基板的主表面上以从下方支撑谐振膜的支撑体。 谐振腔被设置在基板和谐振器膜之间的区域的一部分的下方，在谐振膜的至少一部分之上，其中顶部电极和底部电极彼此重合，并且在另一部分中设置隔离腔 所述区域不存在支撑和谐振腔。

公开(公告)号：US06982479B2

公开(公告)日：2006-01-03

申请号：US10669219

申请日：2003-09-24

申请人： Masaaki Nishijima ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Masaaki Nishijima ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L23/02

CPC分类号： H01L23/49861 ,  H01L23/057 ,  H01L23/481 ,  H01L23/49541 ,  H01L23/66 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01032 ,  H01L2924/10162 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device in which an inductance element formed in a resin package has stable characteristics, impedance matching is achieved easily, and the stability of high-frequency characteristics is improved, more particularly a semiconductor chip sealed within mold resin having a conductor lead extending from an inside of the mold resin to an outside. A portion of the conductor lead inside the mold resin forms an inductance element, at least a part of which is narrower than the external portion of the conductor outside the mold resin.

摘要翻译： 形成在树脂封装中的电感元件的半导体器件具有稳定的特性，容易实现阻抗匹配，提高了高频特性的稳定性，更具体地说，密封在具有从 模具树脂内部到外面。 导体引线在模具树脂内的一部分形成电感元件，其电感元件的至少一部分比模具树脂外导体的外部部分窄。

公开(公告)号：US06548838B1

公开(公告)日：2003-04-15

申请号：US09666157

申请日：2000-09-19

申请人： Yoshiharu Anda ,  Mitsuru Nishitsuji ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Yoshiharu Anda ,  Mitsuru Nishitsuji ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L310328

CPC分类号： H01L29/66462 ,  H01L29/41725 ,  H01L29/7784

摘要： A field-effect transistor of the present invention has first semiconductor layers disposed in at least two regions located above a substrate and spaced apart in a direction parallel to a substrate surface, second semiconductor layers disposed on the respective first semiconductor layers to protrude from the respective side surfaces of the first semiconductor layers, and ohmic electrodes disposed on the respective second semiconductor layers. The field-effect transistor also has a gate electrode formed by self alignment relative to the ohmic electrodes, which is disposed in a region located above the substrate and lying between the first semiconductor layers in spaced relation to the respective side surfaces of the first semiconductor layers.

摘要翻译： 本发明的场效应晶体管具有位于基板上方的至少两个区域中的第一半导体层，并且在平行于衬底表面的方向上间隔开，第二半导体层设置在相应的第一半导体层上以从相应的 第一半导体层的侧表面和设置在相应的第二半导体层上的欧姆电极。 场效应晶体管还具有通过相对于欧姆电极进行自对准而形成的栅电极，该欧姆电极设置在位于衬底上方的区域中，并且位于第一半导体层之间，与第一半导体层的相应侧表面间隔开 。