公开(公告)号：US07109089B2

公开(公告)日：2006-09-19

申请号：US10788977

申请日：2004-02-27

申请人： Kevin Torek ,  Kevin Shea ,  Niraj B. Rana ,  Zhiping Yin

发明人： Kevin Torek ,  Kevin Shea ,  Niraj B. Rana ,  Zhiping Yin

IPC分类号： H01L21/20

CPC分类号： H01L27/10852 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

摘要： In one embodiment, a method includes selectively depositing a collar material between a number of memory containers. The collar material along a side of a first memory container of the number of memory containers is in contact with the collar material along a side of a second memory container. An opening exists between the collar material along a corner of the first memory container and the collar material along a corner of a third memory container.

公开(公告)号：US07012294B2

公开(公告)日：2006-03-14

申请号：US11203046

申请日：2005-08-12

申请人： Er-Xuan Ping ,  Zhiping Yin

发明人： Er-Xuan Ping ,  Zhiping Yin

IPC分类号： H01L27/108

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/84 ,  H01L28/91 ,  H01L29/945

摘要： The invention encompasses a method of forming a silicon nitride layer. A substrate is provided which comprises a first mass and a second mass. The first mass comprises silicon and the second mass comprises silicon oxide. A sacrificial layer is formed over the first mass. While the sacrificial layer is over the first mass, a nitrogen-containing material is formed across the second mass. After the nitrogen-containing material is formed, the sacrificial layer is removed. Subsequently, a silicon nitride layer is formed to extend across the first and second masses, with the silicon nitride layer being over the nitrogen-containing material. Also, a conductivity-enhancing dopant is provided within the first mass. The invention also pertains to methods of forming capacitor constructions.

摘要翻译： 本发明包括形成氮化硅层的方法。 提供了包括第一质量和第二质量的衬底。 第一质量包括硅，第二质量包含氧化硅。 在第一质量块上形成牺牲层。 当牺牲层超过第一质量时，在第二质量块上形成含氮材料。 在形成含氮材料之后，去除牺牲层。 随后，形成氮化硅层以跨越第一和第二质量块延伸，其中氮化硅层在含氮材料之上。 此外，在第一质量块内提供导电性增强掺杂剂。 本发明还涉及形成电容器结构的方法。

公开(公告)号：US20060003237A1

公开(公告)日：2006-01-05

申请号：US11215532

申请日：2005-08-30

申请人： Zhiping Yin ,  Weimin Li

发明人： Zhiping Yin ,  Weimin Li

IPC分类号： G03F1/00 ,  C23C16/00

CPC分类号： H01L21/02115 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02505 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/3146 ,  H01L27/10852

摘要： A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.

摘要翻译： 形成透明的无定形碳层。 透明无定形碳层具有低吸收系数，使得无定形碳在可见光下是透明的。 透明无定形碳层可用于不同目的的半导体器件中。 透明无定形碳层可以包括在半导体器件中的最终结构中。 在制造半导体器件期间，透明非晶碳层也可用作蚀刻工艺中的掩模。

公开(公告)号：US06967134B2

公开(公告)日：2005-11-22

申请号：US10339695

申请日：2003-01-08

申请人： Er-Xuan Ping ,  Zhiping Yin

发明人： Er-Xuan Ping ,  Zhiping Yin

IPC分类号： C23C16/34 ,  H01L21/02 ,  H01L21/314 ,  H01L21/318 ,  H01L27/108 ,  H01L21/8242

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/84 ,  H01L28/91 ,  H01L29/945

摘要： The invention encompasses a method of forming a silicon nitride layer. A substrate is provided which comprises a first mass and a second mass. The first mass comprises silicon and the second mass comprises silicon oxide. A sacrificial layer is formed over the first mass. While the sacrificial layer is over the first mass, a nitrogen-containing material is formed across the second mass. After the nitrogen-containing material is formed, the sacrificial layer is removed. Subsequently, a silicon nitride layer is formed to extend across the first and second masses, with the silicon nitride layer being over the nitrogen-containing material. Also, a conductivity-enhancing dopant is provided within the first mass. The invention also pertains to methods of forming capacitor constructions.

摘要翻译： 本发明包括形成氮化硅层的方法。 提供了包括第一质量和第二质量的衬底。 第一质量包括硅，第二质量包含氧化硅。 在第一质量块上形成牺牲层。 当牺牲层超过第一质量时，在第二质量块上形成含氮材料。 在形成含氮材料之后，去除牺牲层。 随后，形成氮化硅层以跨越第一和第二质量块延伸，其中氮化硅层在含氮材料之上。 此外，在第一质量块内提供导电性增强掺杂剂。 本发明还涉及形成电容器结构的方法。

公开(公告)号：US20050221540A1

公开(公告)日：2005-10-06

申请号：US11140869

申请日：2005-05-31

申请人： Mark Fischer ,  Zhiping Yin ,  Thomas Glass ,  Kunal Parekh ,  Gurtej Sandhu

发明人： Mark Fischer ,  Zhiping Yin ,  Thomas Glass ,  Kunal Parekh ,  Gurtej Sandhu

IPC分类号： H01L21/82 ,  H01L21/8222 ,  H01L23/525 ,  H01L29/00

CPC分类号： H01L23/5256 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a laser fuse. The laser fuse comprises an element comprising a heat conductive material. The fuse also includes an absorption element comprising a material with an adjustable capacity for heat or light absorption that overlays the heat conductive element. The fuse also includes an outer insulating element that overlays and encloses the heat conductive element and the absorption element.

公开(公告)号：US20050098105A1

公开(公告)日：2005-05-12

申请号：US10704315

申请日：2003-11-06

申请人： Jeff Fuss ,  Kevin Hamer ,  Zhiping Yin

发明人： Jeff Fuss ,  Kevin Hamer ,  Zhiping Yin

IPC分类号： C23C16/44 ,  C23C16/00 ,  H05H1/24

CPC分类号： H01J37/3244 ,  C23C16/4404 ,  C23C16/4405

摘要： This invention includes chemical vapor deposition apparatus, methods of chemical vapor depositing an amorphous carbon comprising layer on a substrate, and methods of chemical vapor depositing at least one of Si3N4 and SixOyNz on a substrate. In certain implementations, a gas output manifold having at least one gas output to a deposition chamber and at least three gas inputs is utilized. In certain implementations, a remote plasma generator is utilized. In certain implementations, at least one cleaning gas input line feeds the remote plasma generator. In certain implementations, the at least one cleaning gas input line includes an amorphous carbon cleaning gas input and an Si3N4 or SixOyNz cleaning gas input.

摘要翻译： 本发明包括化学气相沉积装置，在衬底上化学气相沉积无定形碳的层的方法，以及化学气相沉积Si 3 N 4 N 3中的至少一种的方法， 和基底上的Si x O x N z N z z。 在某些实施方案中，利用具有至少一个气体输出到沉积室和至少三个气体输入的气体输出歧管。 在某些实施方案中，利用远程等离子体发生器。 在某些实施方案中，至少一个清洁气体输入管线馈送远程等离子体发生器。 在某些实施方案中，所述至少一个清洁气体输入管线包括无定形碳清洁气体输入端和Si 3 N 4 N 4或Si x O 清洁气体输入。

公开(公告)号：US20050056940A1

公开(公告)日：2005-03-17

申请号：US10661100

申请日：2003-09-12

申请人： Gurtej Sandhu ,  Zhiping Yin ,  Weimin Li

发明人： Gurtej Sandhu ,  Zhiping Yin ,  Weimin Li

IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8242 ,  H01L29/40

CPC分类号： H01L21/3081 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10852

摘要： A masking structure having multiple layers is formed. The masking structure includes an amorphous carbon layer and a cap layer formed over the amorphous carbon layer. The amorphous carbon layer includes transparent amorphous carbon. The cap layer includes non-oxide materials. The masking structure may be used as a mask in an etching process during fabrication of semiconductor devices.

摘要翻译： 形成具有多层的掩模结构。 掩模结构包括无定形碳层和形成在无定形碳层上的盖层。 无定形碳层包括透明无定形碳。 盖层包括非氧化物材料。 在半导体器件的制造期间，掩模结构可以用作蚀刻工艺中的掩模。

公开(公告)号：US20050042879A1

公开(公告)日：2005-02-24

申请号：US10652174

申请日：2003-08-22

申请人： Zhiping Yin ,  Gurtej Sandhu

发明人： Zhiping Yin ,  Gurtej Sandhu

IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/768 ,  H01L21/336 ,  H01L21/30 ,  H01L21/3205 ,  H01L21/46 ,  H01L21/4763

CPC分类号： H01L21/3086 ,  H01L21/02115 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76816 ,  H01L29/6653 ,  Y10S438/945 ,  Y10S438/952

摘要： The invention includes masking methods. In one implementation, a masking material comprising boron doped amorphous carbon is formed over a feature formed on a semiconductor substrate. The masking material comprises at least about 0.5 atomic percent boron. The masking material is substantially anisotropically etched effective to form an anisotropically etched sidewall spacer comprising the boron doped amorphous carbon on a sidewall of the feature. The substrate is then processed proximate the spacer while using the boron doped amorphous carbon comprising spacer as a mask. After processing the substrate proximate the spacer, the boron doped amorphous carbon comprising spacer is etched from the substrate. Other implementations and aspects are contemplated.

摘要翻译： 本发明包括掩蔽方法。 在一个实施方案中，在形成在半导体衬底上的特征上形成包含硼掺杂的非晶碳的掩模材料。 掩模材料包含至少约0.5原子％的硼。 掩模材料基本上是各向异性蚀刻有效地形成各向异性蚀刻的侧壁间隔物，其包含该特征侧壁上的硼掺杂无定形碳。 然后使用包含间隔物的硼掺杂的无定形碳作为掩模，然后在衬垫附近处理衬底。 在靠近间隔物处理衬底之后，从衬底上蚀刻包含衬底的硼掺杂非晶碳。 考虑其他实现和方面。

公开(公告)号：US06541843B2

公开(公告)日：2003-04-01

申请号：US09939409

申请日：2001-08-24

申请人： Zhiping Yin ,  Gurtej Sandhu

发明人： Zhiping Yin ,  Gurtej Sandhu

IPC分类号： H01L2358

CPC分类号： H01L21/76897 ,  H01L21/0276 ,  H01L21/318 ,  H01L21/76802 ,  H01L21/76814

摘要： An anti-reflective coating material layer is provided that has a relatively high etch rate such that it can be removed simultaneously with the cleaning of a defined opening in a relatively short period of time without affecting the critical dimensions of the opening. A method of forming such a layer includes providing a substrate assembly surface and using a gas mixture of at least a silicon containing precursor, a nitrogen containing precursor, and an oxygen containing precursor. The layer is formed at a temperature in the range of about 50° C. to about 600° C. Generally, the anti-reflective coating material layer deposited is SixOyNz:H, where x is in the range of about 0.39 to about 0.65, y is in the range of about 0.02 to about 0.56, z is in the range of about 0.05 to about 0.33, and where the atomic percentage of hydrogen in the inorganic anti-reflective coating material layer is in the range of about 10 atomic percent to about 40 atomic percent. The total SiH4 flow is generally in the range of about 80 sccm to about 400 sccm. The gas mixture may include SiH4 and N2O, where the ratio of SiH4:N2O is in the range of about 0.25 to 0.60. The inorganic anti-reflective coating material layer may be used for defining contact openings, openings for forming capacitor structures, or any other openings in oxide layers.

公开(公告)号：US06444588B1

公开(公告)日：2002-09-03

申请号：US09299357

申请日：1999-04-26

申请人： Richard Holscher ,  Zhiping Yin

发明人： Richard Holscher ,  Zhiping Yin

IPC分类号： H01L2176

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/0337 ,  H01L21/3145

摘要： A method of forming an anti-reflective coating material layer in the fabrication of integrated circuits includes providing a substrate assembly having a surface and providing an inorganic anti-reflective coating material layer on the substrate assembly surface. The inorganic anti-reflective coating material layer has an associated first etch rate when exposed to an etchant. The method further includes thermally treating the inorganic anti-reflective coating material layer formed thereon such that the thermally treated anti-reflective coating material layer then has an associated second etch rate less than the first etch rate when exposed to the etchant, e.g., the second etch rate is less than 16 Å/minute, the second etch rate is less than 20% of the first etch rate, etc.

摘要翻译： 在集成电路的制造中形成抗反射涂层材料层的方法包括提供具有表面的基板组件，并在基板组件表面上提供无机抗反射涂层材料层。 当暴露于蚀刻剂时，无机抗反射涂层材料层具有相关联的第一蚀刻速率。 该方法还包括热处理在其上形成的无机抗反射涂层材料层，使得当暴露于蚀刻剂时，热处理的抗反射涂层材料层具有小于第一蚀刻速率的相关联的第二蚀刻速率，例如第二蚀刻速率 蚀刻速率小于16埃/分钟，第二蚀刻速率小于第一蚀刻速率等的20％。