公开(公告)号：US20120167392A1

公开(公告)日：2012-07-05

申请号：US13191331

申请日：2011-07-26

Applicant: Suman Cherian ,  Olivier Le Neel

Inventor： Suman Cherian ,  Olivier Le Neel

IPC: B26B21/40

CPC classification number: G01N33/48785 ,  Y02B10/70 ,  Y10T436/143333 ,  Y10T436/144444 ,  Y10T436/172307 ,  Y10T436/184 ,  Y10T436/19 ,  Y10T436/204998 ,  Y10T436/205831

Abstract: A razor has an electrochemical sensor for sensing various characteristics, such as biological, chemical, temperature, humidity, and pressure. The electrochemical sensor is positioned within a razor head of the razor, but may be attached to and enclosed in the razor head housing or attached to a razor blade of the razor. The electrochemical sensor may be positioned at different locations within the housing and on the razor blades. The electrochemical sensor may be positioned such that a sensing surface is exposed to a shaving surface of a patient. The razor may also have various electrical components for processing signals generated by the electrochemical sensor and determining the presence or concentration of a chemical or biological marker. The data associated with the signals may be displayed, transmitted to a separate computing device, or stored in a memory.

Abstract translation: 剃须刀具有用于感测各种特性（如生物，化学，温度，湿度和压力）的电化学传感器。 电化学传感器位于剃须刀的剃须刀头内，但可以附接到剃刀头壳体中并且被包围在剃刀头壳体中或附接到剃刀的剃刀刀片上。 电化学传感器可以定位在壳体内和剃刀刀片上的不同位置。 电化学传感器可以被定位成使得感测表面暴露于患者的剃须表面。 剃刀还可以具有用于处理由电化学传感器产生的信号并确定化学或生物标记物的存在或浓度的各种电气部件。 可以显示与信号相关联的数据，发送到单独的计算设备，或存储在存储器中。

公开(公告)号：US20120161332A1

公开(公告)日：2012-06-28

申请号：US12977697

申请日：2010-12-23

Applicant: Puay Gek Chua ,  Yonggang Jin

Inventor： Puay Gek Chua ,  Yonggang Jin

IPC: H01L23/538 ,  H01L21/60 ,  H01L21/768

CPC classification number: H01L23/5389 ,  H01L21/486 ,  H01L21/561 ,  H01L21/568 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/21 ,  H01L2224/2101 ,  H01L2224/2105 ,  H01L2224/211 ,  H01L2224/22 ,  H01L2224/2201 ,  H01L2224/2205 ,  H01L2224/221 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01029 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  Y10T408/566 ,  H01L2924/014 ,  H01L2924/00

Abstract: A process for manufacturing semiconductor packages is provided, that includes drilling blind apertures in a reconstituted wafer, adhering a dry film resist on the wafer over the apertures, and patterning the film to expose a space around each of the apertures. The apertures and spaces are then filled with conductive paste by wiping a quantity of the paste across a surface of the film so that paste is forced into the spaces and apertures. The spaces around the apertures define contact pads whose thickness is constrained by the thickness of the film, preferably to about 10 μm or less. To prevent paste from trapping air pockets in the apertures, the wiping process can be performed in a chamber from which much or all of the air has been evacuated. After curing the paste, the wafer is thinned from the back to expose the cured paste in the apertures.

Abstract translation: 提供了一种用于制造半导体封装的工艺，其包括在重构的晶片中钻孔盲孔，将覆盖在晶片上的干膜抗蚀剂粘附在孔上，以及图案化膜以暴露每个孔周围的空间。 然后通过在胶片的表面上擦拭一定量的糊料，将导电浆料填充到孔和空间中，使得糊料被迫进入空间和孔。 孔周围的空间限定了其厚度受薄膜厚度限制的接触垫，优选为约10μm或更小。 为了防止糊料在孔中捕获气穴，擦拭过程可以在空气中进行大量或全部空气的​​室中进行。 在固化糊料之后，晶片从后面变薄以露出孔中的固化糊料。

公开(公告)号：US20050046973A1

公开(公告)日：2005-03-03

申请号：US10895012

申请日：2004-07-19

Applicant: Pierangelo Magni ,  Remi Brechignac ,  Chek Kho ,  Kum Weng Loo

Inventor： Pierangelo Magni ,  Remi Brechignac ,  Chek Kho ,  Kum Weng Loo

IPC: G02B7/02 ,  G02B27/62 ,  H04N5/225

CPC classification number: G02B13/001 ,  G02B7/02 ,  G02B27/62 ,  H01L2224/48227 ,  H04N5/2254

Abstract: A method is described for fixing a lens of an optical group with respect to an optical sensor in an image acquisition device comprising the steps of housing the optical sensor in a housing, fixing a lower holder of the optical group to the housing, aligning an upper holder of the optical group, wherein the lens is placed, with the sensor so as to align a focusing point of the lens with respect to the sensor, welding the upper holder to the lower holder. The welding step may be performed by means of ultrasounds.

Abstract translation: 描述了一种用于在图像采集装置中固定相对于光学传感器的光学组的透镜的方法，包括以下步骤：将光学传感器容纳在壳体中，将光学组的下部固定器固定到壳体上， 将光学组的保持器放置在传感器上，以便使透镜的聚焦点相对于传感器对准，将上支架焊接到下支架。 焊接步骤可以通过超声波进行。

公开(公告)号：US12230619B2

公开(公告)日：2025-02-18

申请号：US17714822

申请日：2022-04-06

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Jing-En Luan

IPC: H01L25/16 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538

Abstract: The present disclosure is directed to embodiments of optical sensor packages. For example, at least one embodiment of an optical sensor package includes a light-emitting die, a light-receiving die, and an interconnect substrate within a first resin. A first transparent portion is positioned on the light-emitting die and the interconnect substrate, and a second transparent portion is positioned on the light-receiving die and the interconnect substrate. A second resin is on the first resin, the interconnect substrate, and the first and second transparent portions, respectively. The second resin partially covers respective surfaces of the first and second transparent portions, respectively, such that the respective surfaces are exposed from the second resin.

公开(公告)号：US12224342B2

公开(公告)日：2025-02-11

申请号：US17694276

申请日：2022-03-14

Applicant: STMicroelectronics Pte Ltd

Inventor： Yean Ching Yong ,  Maurizio Gabriele Castorina ,  Voon Cheng Ngwan ,  Ditto Adnan ,  Fadhillawati Tahir ,  Churn Weng Yim

IPC: H01L29/78 ,  H01L21/764 ,  H01L21/765 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66

Abstract: An integrated circuit transistor device includes a semiconductor substrate providing a drain, a first doped region buried in the semiconductor substrate providing a body and a second doped region in the semiconductor substrate providing a source. A trench extends into the semiconductor substrate and passes through the first and second doped regions. An insulated polygate region within the trench surrounds a polyoxide region that may have void inclusion. The polygate region is formed by a first gate lobe and second gate lobe on opposite sides of the polyoxide region. A pair of gate contacts are provided at each trench. The pair of gate contacts includes: a first gate contact extending into the first gate lobe at a location laterally offset from the void and a second gate contact extending into the second gate lobe at a location laterally offset from the void.

公开(公告)号：US12196730B2

公开(公告)日：2025-01-14

申请号：US18485072

申请日：2023-10-11

Applicant: STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS PTE LTD

Inventor： Malek Brahem ,  Hatem Majeri ,  Olivier Le Neel ,  Ravi Shankar ,  Enrico Rosario Alessi ,  Pasquale Biancolillo

IPC: G01N33/00 ,  G01N27/02 ,  G01N27/12

Abstract: The present disclosure is directed to a gas sensor device that detects gases with large molecules (e.g., a gas with a molecular weight between 150 g/mol and 450 g/mol), such as siloxanes. The gas sensor device includes a thin film gas sensor and a bulk film gas sensor. The thin film gas sensor and the bulk film gas sensor each include a semiconductor metal oxide (SMO) film, a heater, and a temperature sensor. The SMO film of the thin film gas sensor is an thin film (e.g., between 90 nanometers and 110 nanometers thick), and the SMO film of the bulk film gas sensor is an thick film (e.g., between 5 micrometers and 20 micrometers thick). The gas sensor device detects gases with large molecules based on a variation between resistances of the SMO thin film and the SMO thick film.

公开(公告)号：US20240404905A1

公开(公告)日：2024-12-05

申请号：US18538935

申请日：2023-12-13

Applicant: STMicroelectronics Pte Ltd

Inventor： Eng Hui GOH ,  Voon Cheng NGWAN ,  Fadhillawati TAHIR ,  Ditto ADNAN ,  Boon Kiat TUNG ,  Maurizio Gabriele CASTORINA

IPC: H01L23/31 ,  H01L21/02 ,  H01L27/06

Abstract: An integrated circuit device includes a metal contact and a passivation layer extending on a sidewall of the metal contact and on first and second surface portions of a top surface of the metal contact. The passivation layer is format by a stack of layers including: a tetraethyl orthosilicate (TEOS) layer; a Phosphorus doped TEOS (PTEOS) layer on top of the TEOS layer; and a Silicon-rich Nitride layer on top of the PTEOS layer. The TEOS and PTEOS layers extend over the first surface portion, but not the second surface portion, of the top surface of the metal contact. The Silicon-rich Nitride layer extends over both the first and second surface portions, and is in contact with the second surface portion.

公开(公告)号：US20240379741A1

公开(公告)日：2024-11-14

申请号：US18779549

申请日：2024-07-22

Applicant: STMicroelectronics PTE LTD

Inventor： Yean Ching YONG

IPC: H01L29/06 ,  H01L21/477 ,  H01L21/762 ,  H01L29/51 ,  H01L29/78

Abstract: An integrated circuit includes a polysilicon region that is doped with a dopant. A portion of the polysilicon region is converted to a polyoxide region which includes un-oxidized dopant ions. A stack of layers overlies over the polyoxide region. The stack of layers includes: a first ozone-assisted sub-atmospheric pressure thermal chemical vapor deposition (O3 SACVD) TEOS layer; and a second O3 SACVD TEOS layer; wherein the first and second O3 SACVD TEOS layers are separated from each other by a dielectric region. A thermally annealing is performed at a temperature which induces outgassing of passivation atoms from the first and second O3 SACVD TEOS layers to migrate to passivate interface charges due to the presence of un-oxidized dopant ions in the polyoxide region.

公开(公告)号：US20240282881A1

公开(公告)日：2024-08-22

申请号：US18649789

申请日：2024-04-29

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Jing-En LUAN

IPC: H01L31/12 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/18

CPC classification number: H01L31/12 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/186

Abstract: The present disclosure is directed to a sensor die with an embedded light sensor and an embedded light emitter as well as methods of manufacturing the same. The light emitter in the senor die is surrounded by a resin. The sensor die is incorporated into semiconductor device packages as well as methods of manufacturing the same. The semiconductor device packages include a first optically transmissive structure on the light sensor of the sensor die and a second optically transmissive structure on the light emitter of the sensor die. The first optically transmissive structure and the second optically transmissive structure cover and protect the light sensor and the light emitter, respectively. A molding compound is on a surface of a sensor die and covers sidewalls of the first and second optically transmissive structures on the sensor die.

公开(公告)号：US11988743B2

公开(公告)日：2024-05-21

申请号：US18055138

申请日：2022-11-14

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Jing-En Luan ,  Jerome Teysseyre

IPC: G01S17/04 ,  G01S7/481 ,  H01L25/16 ,  H01L31/173

CPC classification number: G01S17/04 ,  G01S7/4813 ,  H01L25/167 ,  H01L31/173 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/92227 ,  H01L2224/97 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00

Abstract: A proximity sensor includes a printed circuit board substrate, a semiconductor die, electrical connectors, a lens, a light emitting assembly, and an encapsulating layer. The semiconductor die is positioned over the printed circuit board substrate with its upper surface facing away from the printed circuit board substrate. Each of the electrical connectors is in electrical communication with a contact pad of the semiconductor die and a respective contact pad of the printed circuit board substrate. The lens is positioned over a sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads facing the printed circuit board substrate. The encapsulating layer is positioned on the printed circuit board substrate, at least one of the electrical connectors, the semiconductor die, the lens, and the light emitting assembly.