公开(公告)号：US20140370649A1

公开(公告)日：2014-12-18

申请号：US14136630

申请日：2013-12-20

Applicant: First Solar, Inc.

Inventor： Pawel Mrozek ,  Long Cheng

IPC: H01L31/18 ,  C25D7/12

CPC classification number: H01L31/1828 ,  C25D7/12 ,  C25D17/001 ,  C25D21/02 ,  C25D21/12 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02562 ,  H01L21/02579 ,  H01L21/02628

Abstract: A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer.

Abstract translation: 在形成该层时，掺入锌基层中的Cu或Sb掺杂剂的量的方法和装置。 使用电化学沉积（ECD）工艺在涂覆的基底上形成该层。 在ECD工艺中，可以在电化学沉积工艺期间系统地改变偏置电压和电镀溶液组成，以改变掺入镀层中的Cu或Sb掺杂剂的量。

公开(公告)号：US20110012061A1

公开(公告)日：2011-01-20

申请号：US12888161

申请日：2010-09-22

Applicant: Sungjee Kim ,  Moungi G. Bawendi

Inventor： Sungjee Kim ,  Moungi G. Bawendi

IPC: C09K11/88 ,  C09K11/54

CPC classification number: G01N33/588 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/883 ,  C30B7/00 ,  C30B29/605 ,  C30B33/00 ,  H01L21/0237 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/205 ,  H01L29/225 ,  H01L29/267 ,  H01L51/426 ,  Y02E10/549 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/777 ,  Y10S977/811 ,  Y10T428/12021 ,  Y10T428/12528 ,  Y10T428/12986 ,  Y10T428/294 ,  Y10T428/2991 ,  Y10T428/315

Abstract: A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.

Abstract translation: 半导体纳米晶体异质结构具有由第二半导体材料的外涂层包围的第一半导体材料的芯。 在激发时，一个载体可以基本上限于核心，另一个载体可以基本上局限于外涂层。

公开(公告)号：US07696073B2

公开(公告)日：2010-04-13

申请号：US11984943

申请日：2007-11-26

Applicant: Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

Inventor： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC: H01L21/38 ,  H01L29/22 ,  H01L31/0296

CPC classification number: C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

Abstract: The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

Abstract translation: 本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置 会员。 具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。 通过本发明，可以实现与早期技术相比更小的掺杂量的所需载流子浓度，并且可以提高所得晶体的结晶度。

公开(公告)号：US07629625B2

公开(公告)日：2009-12-08

申请号：US11984944

申请日：2007-11-26

Applicant: Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

Inventor： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC: H01L21/00

CPC classification number: C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

Abstract: The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

Abstract translation: 本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置 会员。 具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。 通过本发明，可以实现与早期技术相比掺杂量小的期望载流子浓度，并且可以提高所得晶体的结晶度。

公开(公告)号：US07501663B2

公开(公告)日：2009-03-10

申请号：US11558176

申请日：2006-11-09

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC: H01L33/00

CPC classification number: H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes: a substrate having a substrate surface oriented along a substrate surface plane; a first grown layer including a first grown layer conductivity type formed on the substrate; a masking layer formed on the first grown layer; a second grown layer of a second grown layer conductivity type formed by selective growth through an opening in the masking layer and including a crystal surface oriented along a crystal surface plane; a first cladding layer including a first cladding layer conductivity type formed along at least a portion of the crystal surface plane; an active layer; and a second cladding layer including a second cladding layer conductivity type. At least one of the first cladding layer, the active layer, and the second cladding layer cover the masking layer surrounding the opening.

Abstract translation: 提供了一种半导体发光器件。 半导体发光器件包括：具有沿衬底表面取向的衬底表面的衬底; 在基板上形成包括第一生长层导电型的第一生长层; 形成在第一生长层上的掩模层; 通过通过掩模层中的开口的选择性生长形成并包括沿着晶体表面取向的晶体表面形成的第二生长层导电类型的第二生长层; 包括沿着所述晶体表面的至少一部分形成的第一包层导电类型的第一包层; 活性层 以及包括第二包覆层导电型的第二包覆层。 第一包覆层，有源层和第二覆层中的至少一个覆盖围绕开口的掩模层。

公开(公告)号：US20080090327A1

公开(公告)日：2008-04-17

申请号：US11984941

申请日：2007-11-26

Applicant: Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

Inventor： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC: H01L21/06

CPC classification number: C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

Abstract: The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

公开(公告)号：US07129515B2

公开(公告)日：2006-10-31

申请号：US11098302

申请日：2005-03-31

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC: H01L29/20 ,  H01L31/036

CPC classification number: H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Abstract translation: 提供半导体发光器件。 半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体 性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。

公开(公告)号：US07122826B2

公开(公告)日：2006-10-17

申请号：US11093885

申请日：2005-03-30

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC: H01L29/20 ,  H01L31/036

CPC classification number: H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Abstract translation: 提供半导体发光器件。 半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体 性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。

公开(公告)号：US20050167677A1

公开(公告)日：2005-08-04

申请号：US11097732

申请日：2005-03-31

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC: H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L29/15

CPC classification number: H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

公开(公告)号：US06924500B2

公开(公告)日：2005-08-02

申请号：US10062687

申请日：2002-01-30

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC: H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L29/20 ,  H01L31/036

CPC classification number: H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Abstract translation: 提供半导体发光器件。 半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体 性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。