公开(公告)号：US5745517A

公开(公告)日：1998-04-28

申请号：US581691

申请日：1995-12-29

Applicant: David P. Bour ,  Robert L. Thornton ,  Kevin J. Beernink

Inventor： David P. Bour ,  Robert L. Thornton ,  Kevin J. Beernink

IPC: H01S5/042 ,  H01S5/20 ,  H01S5/30 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19 ,  H01L29/167

CPC classification number: B82Y20/00 ,  H01S5/20 ,  H01S5/0422 ,  H01S5/2059 ,  H01S5/3054 ,  H01S5/3413 ,  H01S5/34326

Abstract: The polarity of the semiconductor layers in an AlGaInP semiconductor laser fabricated by impurity induced layer disordering (IILD) is reversed to allow n-doping. Thus, the cladding and confinement layers between the substrate and the active layer will have p-type conductivity. The upper confinement, cladding, and contact layers can be either n or p-type conductivity with n-diffused regions formed by IILD extending down from the contact layer to the lower cladding layer. The electrodes can include either a substrate electrode or a lateral electrode.

Abstract translation: 通过杂质诱导层失调（IILD）制造的AlGaInP半导体激光器中的半导体层的极性被反转以允许n掺杂。 因此，衬底和有源层之间的包层和限制层将具有p型导电性。 上约束，包层和接触层可以是n或p型导电性，其中由扩散区域形成的n扩散区域从接触层向下延伸到下包层。 电极可以包括基底电极或横向电极。

公开(公告)号：US5508225A

公开(公告)日：1996-04-16

申请号：US218184

申请日：1994-03-28

Applicant: Kaoru Kadoiwa

Inventor： Kaoru Kadoiwa

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01L21/20

CPC classification number: H01S5/305 ,  H01S5/2231 ,  H01S5/3054 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/32308 ,  H01S5/32325 ,  Y10S148/095

Abstract: In a method for manufacturing a semiconductor laser diode, producing visible light after growing a p type GaAs contact layer on a p type AlGaInP cladding layer, an n type layer comprising that can be selectively etched with an etchant that does not etch GaAs is grown on the p type GaAs contact layer. After cooling, the n type layer is selectively etched and removed. In this method, a diffusion potential produced at the p-n junction between the p type GaAs contact layer and the n type layer prevents ionized hydrogen from entering the p type AlGaInP cladding layer during cooling, whereby the activation ratio of Zn atoms in the p type AlGaInP cladding layer is increased. Therefore, even if the Zn/III ratio during the growth of the p type AlGaInP cladding layer is low, a semiconductor laser diode with reduced threshold current and improved temperature characteristics is attained. In addition, since the n type layer grown on the p type GaAs contact layer comprises a semiconductor material that can be selectively etched with an etchant that does not etch GaAs, the etching process of the n type layer is carried out with high controllability without adversely affecting the surface of the p type GaAs contact layer, resulting in a highly reliable semiconductor laser diode.

Abstract translation: 在制造半导体激光二极管的方法中，在p型AlGaInP包覆层上生长ap型GaAs接触层之后产生可见光，可以在p上选择性地蚀刻含有不蚀刻GaAs的蚀刻剂的n型层， 型GaAs接触层。 冷却后，选择性地蚀刻和去除n型层。 在该方法中，在p型GaAs接触层和n型层之间的pn结处产生的扩散电位在冷却期间防止电离氢进入p型AlGaInP包层，由此p型AlGaInP中的Zn原子的活化比 包层增加。 因此，即使在p型AlGaInP包层生长期间的Zn / III比低，也可以获得具有降低的阈值电流和改善的温度特性的半导体激光二极管。 另外，由于在p型GaAs接触层上生长的n型层包括可以用不蚀刻GaAs的蚀刻剂选择性地蚀刻的半导体材料，所以n型层的蚀刻工艺具有高可控性而不会有不利影响 影响p型GaAs接触层的表面，导致高度可靠的半导体激光二极管。

公开(公告)号：US5448581A

公开(公告)日：1995-09-05

申请号：US158543

申请日：1993-11-29

Applicant: Chun-Meng Wu ,  Toshihiko Makino

Inventor： Chun-Meng Wu ,  Toshihiko Makino

IPC: H01S3/00 ,  H01S5/125 ,  H01S5/183 ,  H01S5/187 ,  H01S5/343 ,  H01S3/19

CPC classification number: B82Y20/00 ,  H01S5/187 ,  H01S3/005 ,  H01S5/1215 ,  H01S5/1231 ,  H01S5/125 ,  H01S5/3054 ,  H01S5/34306 ,  H01S5/3432 ,  H01S5/3434

Abstract: A surface emitting, circular grating, semiconductor laser. Gain is generated by injecting current into an active, annular mesa region which surrounds a central, circular region having a circular grating for surface emission. The annular mesa region is surrounded by an outer annular region in which is etched a first order grating for creating feedback. Methods of fabricating the circular grating laser are also described.

Abstract translation: 表面发射，圆形光栅，半导体激光器。 通过将电流注入到围绕具有用于表面发射的圆形光栅的中心圆形区域的有源环形台面区域中来产生增益。 环形台面区域被外部环形区域围绕，其中蚀刻了用于产生反馈的第一级光栅。 还描述了制造圆形光栅激光器的方法。

公开(公告)号：US5319657A

公开(公告)日：1994-06-07

申请号：US957786

申请日：1992-10-08

Applicant: Nobuyuki Otsuka ,  Masahiro Kito ,  Masato Ishino ,  Yasushi Matsui

Inventor： Nobuyuki Otsuka ,  Masahiro Kito ,  Masato Ishino ,  Yasushi Matsui

IPC: H01S5/30 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC classification number: B82Y20/00 ,  H01S5/305 ,  H01S5/34 ,  H01S5/3054 ,  H01S5/309 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/34313

Abstract: The semiconductor laser comprises a Sn doped InP substrate 1, n-InGaAsP wave guide layer 2, 5 nm thick InGaAs well layer 3, 3.5 nm thick undoped InGaAsP layer 4, 3 nm thick p-InGaAsP modulation doping layer 5, 3.5 nm thick undoped InGaAsP layer 6, a modulation doping quantum well layer 7 with ten wells, a 90 nm thick p-InGaAsP layer 8, a p-InP clad layer 9 (Zn=7.times.10.sup.17 cm.sup.-3), p-n-p current block layer 10, and a mesa-shaped active layer region 11. An Au/sn n-electrode 12 and if Au/Zn p-electrode 13 are formed by vapor deposition to complete the laser structure.

Abstract translation: 半导体激光器包括Sn掺杂的InP衬底1，n-InGaAsP波导层2，5nm厚的InGaAs阱层3,3.5nm厚的未掺杂InGaAsP层4,3nm厚的p-InGaAsP调制掺杂层5，3.5nm厚的未掺杂 InGaAsP层6，具有10个阱的调制掺杂量子阱层7，90nm厚的p-InGaAsP层8，p-InP包覆层9（Zn = 7×10 17 cm -3），pnp电流阻挡层10和台面 形Au / Sn电极12，如果通过气相沉积形成Au / Zn p电极13以完成激光结构。

公开(公告)号：US5264397A

公开(公告)日：1993-11-23

申请号：US656908

申请日：1991-02-15

Applicant: Shwu L. Lin ,  John D. Kulick ,  Randall B. Wilson

Inventor： Shwu L. Lin ,  John D. Kulick ,  Randall B. Wilson

IPC: H01L21/208 ,  H01L21/324 ,  H01L33/00 ,  H01L33/30 ,  H01S5/30 ,  H01S5/323 ,  H01L21/20

CPC classification number: H01L33/305 ,  H01L21/02543 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/3245 ,  H01L33/0062 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/32391

Abstract: A method for activating the zinc dopant in an active layer of a Group III/Group V semiconductor device comprises forming a layer of zinc doped Group III/Group IV material, and thereafter annealing the layer at a predetermined temperature and for a predetermined time sufficient to convert inactive zinc in the layer to acceptor zinc. In a preferred embodiment of the invention, a method for activating zinc dopant in the active layer of an InP-InGaAsP double heterostructure comprises annealing the active layer at a temperature of about 625.degree. C. for at least about 190 seconds which converts inactive zinc to acceptor zinc without substantially decreasing the total zinc in the active layer. In another preferred embodiment, a method for increasing the power output of InP-InGaAsP optoelectronic semiconductor device, such as a laser or an LED having a zinc doped active layer, comprises annealing the active layer of the semiconductor device at a temperature of about 625.degree. C. for at least about 190 seconds.

Abstract translation: 用于激活III / V族半导体器件的有源层中的锌掺杂剂的方法包括形成锌掺杂的III族/第IV族材料层，然后在预定温度下将该层退火至足以使 将层中的无定形锌转化为受体锌。 在本发明的优选实施方案中，在InP-InGaAsP双异质结构的有源层中激活锌掺杂剂的方法包括在约625℃的温度下将活性层退火至少约190秒，其将非活性锌转化为 受体锌，而不会显着降低活性层中的总锌。 在另一个优选实施例中，用于增加InP-InGaAsP光电子半导体器件（例如激光器或具有锌掺杂有源层的LED）的功率输出的方法包括在约625℃的温度下退火半导体器件的有源层 C.至少约190秒。

公开(公告)号：US4949350A

公开(公告)日：1990-08-14

申请号：US380996

申请日：1989-07-17

Applicant: Jack L. Jewell ,  Axel Scherer

Inventor： Jack L. Jewell ,  Axel Scherer

IPC: H01S5/183 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01S5/18305 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3432

Abstract: A vertical-cavity surface emitting laser and method of making in which a III-V heterostructure is epitaxially grown to include a quantum well active region between two interference mirrors separated by an emitting wavelength of the quantum well region. A small pillar of this heterostructure is etched by chemically assisted xenon ion beam itching. Prior to etching, a top metal contact is deposited on the epitaxial semiconductor. Light is emitted through the substrate having a bandgap larger than that of the quantum well region.

Abstract translation: 垂直腔表面发射激光器及其制造方法，其中III-V异质结构外延生长以包括由量子阱区域的发射波长分隔的两个干涉镜之间的量子阱有源区。 通过化学辅助的氙离子束瘙痒蚀刻该异质结构的小柱。 在蚀刻之前，在外延半导体上沉积顶部金属接触。 光通过具有大于量子阱区的带隙的衬底发射。

公开(公告)号：US4771432A

公开(公告)日：1988-09-13

申请号：US835471

申请日：1986-03-03

Applicant: Seiki Yano ,  Saburo Yamamoto ,  Sadayoshi Matsui ,  Hiroshi Hayashi

Inventor： Seiki Yano ,  Saburo Yamamoto ,  Sadayoshi Matsui ,  Hiroshi Hayashi

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/223 ,  H01S5/24 ,  H01S5/30 ,  H01S5/323 ,  H01S3/19

CPC classification number: H01S5/24 ,  H01S5/20 ,  H01S5/305 ,  H01S5/10 ,  H01S5/2059 ,  H01S5/2234 ,  H01S5/3054 ,  H01S5/32308

Abstract: A semiconductor laser comprising a middle-positioned active layer sandwiched between the lower-positioned active layer and the upper-positioned active layer, the refractivity of each of said lower- and upper- positioned active layers being slightly different from that of the middle-positioned active layer.

Abstract translation: 一种半导体激光器，包括夹在下位有源层和上位有源层之间的中间有源层，每个所述下位置和上位有源层的折射率与中间定位有源层略有不同 活动层

公开(公告)号：US4679199A

公开(公告)日：1987-07-07

申请号：US779012

申请日：1985-09-23

Applicant: Robert Olshansky

Inventor： Robert Olshansky

IPC: H01L33/02 ,  H01L33/30 ,  H01S5/20 ,  H01S5/227 ,  H01S5/30 ,  H01S5/323 ,  H01S3/19

CPC classification number: H01L33/305 ,  H01L33/025 ,  H01S5/20 ,  H01S5/227 ,  H01S5/305 ,  H01S5/2059 ,  H01S5/2275 ,  H01S5/3054 ,  H01S5/32391

Abstract: In conventional InGaAsP/InP semiconductor lasers the p-doping in the InP laser level cannot be increased above 1.times.10.sup.18 atoms/cm.sup.3 without adversely affecting the optical characteristics of the devices. However, by introducing a thin low-doped p-InP layer and a thicker highly doped InP layer, good optical characteristics can be maintained and series resistance can be reduced by a factor of 2 to 4, thereby resulting in operable devices having significantly increased operating currents and higher output power than those of the prior art.

Abstract translation: 在传统的InGaAsP / InP半导体激光器中，InP激光水平的p掺杂不能增加到高于1×1018原子/ cm3，而不会不利地影响器件的光学特性。 然而，通过引入薄的低掺杂p-InP层和较厚的高掺杂InP层，可以保持良好的光学特性并将串联电阻降低2至4倍，从而导致可操作的器件具有显着增加的操作 电流和较高的输出功率。

公开(公告)号：US20240204479A1

公开(公告)日：2024-06-20

申请号：US18589469

申请日：2024-02-28

Applicant: TRUMPF Photonic Components GmbH

Inventor： Ulrich Weichmann ,  Holger Joachim Moench

IPC: H01S5/026 ,  H01S5/183 ,  H01S5/30 ,  H01S5/34

CPC classification number: H01S5/0262 ,  H01S5/18311 ,  H01S5/3054 ,  H01S5/3416 ,  H01S5/18305

Abstract: A vertical cavity surface emitting laser includes an optical resonator, a photodiode, and an electrical contact arrangement. The optical resonator includes a semiconductor multilayer stack. The semiconductor multilayer stack includes, in a direction of growth of the multilayer stack, a first distributed Bragg reflector, a second distributed Bragg reflector, and an active region for laser emission arranged between the first distributed Bragg reflector and second distributed Bragg reflector. The electrical contact arrangement is arranged to electrically pump the optical resonator and to electrically contact the photodiode. A reflectivity of the second distributed Bragg reflectoris higher than a reflectivity of the first distributed Bragg reflector. The photodiode has an absorbing region arranged in the second distributed Bragg reflector. A tunnel junction is arranged between the photodiode and the active region.

公开(公告)号：US11870220B2

公开(公告)日：2024-01-09

申请号：US17868447

申请日：2022-07-19

Applicant: OTTO-VON-GUERICKE-UNIVERSITAET MAGDEBURG ,  AZUR SPACE SOLAR POWER GMBH

Inventor： Armin Dadgar ,  André Strittmatter

IPC: H01S5/00 ,  H01S5/30 ,  H01S5/22

CPC classification number: H01S5/3068 ,  H01S5/2227 ,  H01S5/3063 ,  H01S5/3077 ,  H01S5/3054

Abstract: A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap,






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