利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

192 条记录 (耗时 0.015 秒)

    Recording read heads with a multi-layer AFM layer methods and apparatuses
    71.
    发明授权
    Recording read heads with a multi-layer AFM layer methods and apparatuses 有权
    用多层AFM层记录读取头的方法和装置

    公开(公告)号：US09361913B1

    公开(公告)日：2016-06-07

    申请号：US13923991

    申请日：2013-06-21

    申请人： Western Digital (Fremont), LLC

    发明人： Yuankai Zheng ,  Qunwen Leng

    IPC分类号： G11B5/31 ,  H01F10/13

    CPC分类号： G11B5/1272 ,  C23C14/14 ,  G11B5/3143 ,  H01F10/135 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3268

    摘要： Apparatuses and methods of recording read heads with a multi-layer anti-ferromagnetic (AFM) layer are provided. The AFM layer has gradient Manganese (Mn) compositions. A multi-layer AFM layer comprises a plurality of sub-layers having different Mn compositions. An upper sub-layer has a higher Mn composition than an lower sub-layer. Different types of gases may be used to deposit each sub-layer and the flow of each gas may be adjusted.

    摘要翻译： 提供了用多层反铁磁（AFM）层记录读取头的装置和方法。 AFM层具有梯度锰（Mn）组成。 多层AFM层包括具有不同Mn组成的多个子层。 上层具有比下层更高的Mn组成。 可以使用不同类型的气体来沉积每个子层，并且可以调节每种气体的流动。

    Planar inductance element
    74.
    发明授权
    Planar inductance element 失效
    平面电感元件

    公开(公告)号：US6103405A

    公开(公告)日：2000-08-15

    申请号：US17662

    申请日：1998-02-03

    申请人： Hiroshi Tomita

    发明人： Hiroshi Tomita

    IPC分类号： H01F10/08 ,  H01F10/13 ,  H01F10/32 ,  H01F17/00 ,  H01L23/522 ,  G11B5/66

    CPC分类号： B82Y25/00 ,  H01F10/13 ,  H01F10/138 ,  H01F10/3218 ,  H01F17/0006 ,  H01L23/5227 ,  H01L2924/0002 ,  Y10S428/90

    摘要： A planar inductance element is provided which has good high-frequency magnetic properties and which can be manufactured at high yield. The element has at least one ferromagnetic film which, whose high-frequency properties change only a little when thermal, magnetic and mechanical stresses are applied to them during the manufacture of the element. The film has high process immunity. The film has been formed by applying a stress in a plane of a ferromagnetic film having uniaxial magnetic anisotropy or forming an antiferromagnetic film on such a ferromagnetic film, and by heat-treating the resultant structure in a magnetic field, thereby inducing inplane unidirectional magnetic anisotropy in a prescribed direction. The ferromagnetic film thus formed has its high-frequency permeability improved and its high-frequency loss reduced. In forming the ferromagnetic film, the inplane unidirectional magnetic anisotropy may be induced at an angle of about 30.degree. or about 60.degree. to the longer axis of the rectangular planar inductance element. If so, the high-frequency loss of the film decreases, and the effective high-frequency permeability changes almost nil in spite of an anisotropic stress applied to the film during the manufacture of the planar inductance element.

    摘要翻译： 提供了一种具有良好的高频磁性能并可以高产率制造的平面电感元件。 该元件具有至少一个铁磁膜，其在元件的制造过程中当对其施加热，磁和机械应力时，其高频特性仅改变一点。 该片具有较高的工艺免疫力。 通过在具有单轴磁各向异性的铁磁膜的平面中施加应力或在这种铁磁膜上形成反铁磁性膜，并且通过在磁场中热处理所得到的结构，形成膜，从而引起面内单向磁各向异性 在规定的方向。 由此形成的铁磁膜的高频磁导率提高，其高频损耗降低。 在形成铁磁膜时，可以以相对于矩形平面电感元件的长轴大约30度或大约60度的角度诱发面内单向磁各向异性。 如果是这样，则在制造平面电感元件期间，尽管施加到膜上的各向异性的应力，但是膜的高频损耗减小，有效的高频磁导率几乎变化不大。

    Soft magnetic thin film, and magnetic head and magnetic recording apparatus using the film
    76.
    发明授权
    Soft magnetic thin film, and magnetic head and magnetic recording apparatus using the film 失效
    软磁薄膜，磁头和磁记录装置

    公开(公告)号：US5962153A

    公开(公告)日：1999-10-05

    申请号：US831537

    申请日：1997-04-08

    申请人： Fumiyoshi Kirino ,  Nagatugu Koiso

    发明人： Fumiyoshi Kirino ,  Nagatugu Koiso

    IPC分类号： G11B5/187 ,  G11B5/31 ,  H01F10/13 ,  G11B5/66

    CPC分类号： G11B5/3109 ,  G11B5/1878 ,  H01F10/131 ,  Y10S428/90 ,  Y10T428/115

    摘要： To obtain a soft magnetic thin film having improved soft magnetic characteristics, thermal stability and corrosion resistance, this invention uses a soft magnetic thin film comprising Fe as the principal component thereof and containing Ta and/or Hf and C and/or N, wherein the (110) plane of Fe is preferentially oriented, the size d.sub.1 of the Fe crystal particle is not greater than 15 nm and the size d.sub.2 of the Ta--C, Ta--N, Hf--C or Hf--N particle is not greater than 3 nm. The crystal particle size is controlled by causing first the Fe crystal particle to precipitate at the initial stage of the film formation and then causing the crystal particle of Ta--C, Ta--N, Hf--C or Hf--N to precipitate.

    摘要翻译： 为了获得具有改善的软磁特性，热稳定性和耐腐蚀性的软磁性薄膜，本发明使用包含Fe作为其主要成分并含有Ta和/或Hf和C和/或N的软磁薄膜，其中 Fe的（110）面优先取向，Fe结晶粒子的尺寸d1不大于15nm，Ta-C，Ta-N，Hf-C或Hf-N粒子的尺寸d2不大于 3nm。 通过首先在成膜的初始阶段首先使Fe晶体析出，然后使Ta-C，Ta-N，Hf-C或Hf-N的结晶粒子沉淀，来控制晶体粒径。

    MR Device with anti-ferro magnetic field anti-parallel to sense current magnetic field
    77.
    发明授权
    MR Device with anti-ferro magnetic field anti-parallel to sense current magnetic field 失效
    MR器件具有反铁磁反平行感应电流磁场

    公开(公告)号：US5914839A

    公开(公告)日：1999-06-22

    申请号：US899862

    申请日：1997-07-24

    申请人： Atsushi Matsuzono ,  Satoshi Sasaki

    发明人： Atsushi Matsuzono ,  Satoshi Sasaki

    IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F10/12 ,  H01F10/13 ,  H01F10/32 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3929 ,  G11B5/3932 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/3996

    摘要： A magneto-resistance effect device having improved sensitivity in which an effective anisotropic magnetic field operating on a magneto-resistance effect layer is not increased by the sense current magnetic field. The device includes a magnetic field detection unit having a magneto-resistance effect film exhibiting a magneto-resistance effect. The magnetic field detection unit is fed with a sense current in a direction substantially parallel to an external magnetic field. The device also includes an anti-ferromagnetic film arranged neighboring to the magneto-resistance effect film of the magnetic field detection unit. The direction of a magnetic field emanating from the anti-ferromagnetic film is substantially anti-parallel to the direction of a sense current magnetic field generated by the sense current and impressed on the magneto-resistance effect film of the magnetic field detection unit.

    摘要翻译： 具有提高灵敏度的磁阻效应器件，其中在磁阻效应层上运行的有效各向异性磁场不会被感测电流磁场增加。 该装置包括具有显示磁阻效应的磁阻效应膜的磁场检测单元。 磁场检测单元以基本上平行于外部磁场的方向馈送感测电流。 该装置还包括与磁场检测单元的磁阻效应膜相邻布置的反铁磁膜。 从反铁磁膜发出的磁场的方向基本上与由感测电流产生的感应电流磁场的方向平行，并且施加在磁场检测单元的磁阻效应膜上。