公开(公告)号：US20240120209A1

公开(公告)日：2024-04-11

申请号：US18011837

申请日：2021-12-22

Applicant: Lam Research Corporation

Inventor： Nikhil Dole ,  Takumi Yanagawa ,  Eric A. Hudson ,  Merrett Wong ,  Aniruddha Joi

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01J37/32082 ,  H01J37/32449 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67253 ,  H01J2237/327 ,  H01J2237/3341

Abstract: A method for etching a stack is described. The method includes etching a first nitrogen-containing layer of the stack by applying a non-metal gas and discontinuing the application of the non-metal gas upon determining that a first oxide layer is reached. The first oxide layer is under the first nitrogen-containing layer. The method further includes etching the first oxide layer by applying a metal-containing gas. The application of the metal-containing gas is discontinued upon determining that a second nitrogen-containing layer will be reached. The second nitrogen-containing layer is situated under the first oxide layer. The method includes etching the second nitrogen-containing layer by applying the non-metal gas.

公开(公告)号：US20240112896A1

公开(公告)日：2024-04-04

申请号：US18534027

申请日：2023-12-08

Applicant: Lam Research Corporation

Inventor： Jengyi Yu ,  Samantha SiamHwa Tan ,  Seongjun Heo ,  Ge Yuan ,  Siva Krishnan Kanakasabapathy

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32862 ,  C23C16/4405

Abstract: A method for cleaning surfaces of a substrate processing chamber includes a) supplying a first gas selected from a group consisting of silicon tetrachloride (SiCl4), carbon tetrachloride (CCl4), a hydrocarbon (CxHy where x and y are integers) and molecular chlorine (Cl2), boron trichloride (BCl3), and thionyl chloride (SOCl2); b) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; c) extinguishing the plasma and evacuating the substrate processing chamber; d) supplying a second gas including fluorine species; e) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; and f) extinguishing the plasma and evacuating the substrate processing chamber.

公开(公告)号：US20240112893A1

公开(公告)日：2024-04-04

申请号：US18534182

申请日：2023-12-08

Applicant: Lam Research Corporation

Inventor： Feng WANG ,  Keith GAFF ,  Christopher KIMBALL

IPC: H01J37/32 ,  H01J37/244 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32715 ,  H01J37/244 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32568 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833 ,  H01J2237/002 ,  H01J2237/3321 ,  H01L21/68742

Abstract: An electrostatic chuck for a substrate processing system is provided. The electrostatic chuck includes: a top plate configured to electrostatically clamp to a substrate and formed of ceramic; an intermediate layer disposed below the top plate; and a baseplate disposed below the intermediate layer and formed of ceramic. The intermediate layer bonds the top plate to the baseplate.

公开(公告)号：US20240110279A1

公开(公告)日：2024-04-04

申请号：US18265825

申请日：2021-12-14

Applicant: LAM RESEARCH CORPORATION

Inventor： Nitin KADAM ,  Aaron Blake MILLER ,  Naveen PATIL ,  Panya WONGSENAKHUM ,  Gorun BUTAIL ,  Shruti THOMBARE

IPC: C23C16/455 ,  C23C16/46

CPC classification number: C23C16/45544 ,  C23C16/45527 ,  C23C16/46

Abstract: Multiple charge volumes (CVs) are used to supply a reactant and an inert gas at each processing chamber to perform atomic layer deposition (ALD) on substrates. A series of pulses of the reactant can be supplied at a high flow rate from two CVs during a dose step, which extends dose time. The inert gas can be supplied at an equal starting pressure from first and second CVs at first and second purge steps. A heated pulse valve manifold (PVM) minimizes temperature variations of process gases supplied from the PVM to respective processing chamber during ALD. The PVM preheats the process gases before the process gases enter the respective CVs in the PVM. The PVM includes additional supplemental heaters above and below the CVs to maintain the temperature of the process gases within the CVs. The PVM can be rapidly cooled before performing maintenance, which reduces downtime.

公开(公告)号：US11942351B2

公开(公告)日：2024-03-26

申请号：US18139660

申请日：2023-04-26

Applicant: Lam Research Corporation

Inventor： Alexander Matyushkin ,  Keith Laurence Comendant ,  John Patrick Holland

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/6831 ,  H01J2237/002 ,  H01J2237/2007

Abstract: An electrostatic chuck for a substrate processing system is provided and includes a baseplate, an intermediate layer disposed on the baseplate, and a top plate. The top plate is bonded to the baseplate via the intermediate layer and is configured to electrostatically clamp to a substrate. The top plate includes a monopolar clamping electrode and seals. The monopolar clamping electrode includes a groove opening pattern with coolant gas groove opening sets. The seals separate coolant gas zones. The coolant gas zones include four or more coolant gas zones. Each of the coolant gas zones includes distinct coolant gas groove sets. The top plate includes the distinct coolant gas groove sets. Each of the distinct coolant gas groove sets has one or more coolant gas supply holes and corresponds to a respective one of the coolant gas groove opening sets.

公开(公告)号：US11935776B2

公开(公告)日：2024-03-19

申请号：US17175315

申请日：2021-02-12

Applicant: Lam Research Corporation

Inventor： Christopher Kimball ,  Keith Gaff ,  Feng Wang

IPC: H01L21/683 ,  H01J37/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01J37/00 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32816 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/68735 ,  H01L22/26 ,  H01J2237/334 ,  H01L21/68785

Abstract: A method for electrostatically clamping an edge ring in a plasma processing chamber with an electrostatic ring clamp with at least one ring backside temperature channel for providing a flow of gas to the edge ring is provided. A vacuum is provided to the at least one ring backside temperature channel Pressure in the backside temperature channel is measured. An electrostatic ring clamping voltage is provided when the pressure in the backside temperature channel reaches a threshold maximum pressure. The vacuum to the backside temperature channel is discontinued. Pressure in the backside temperature channel is measured. If pressure in the backside temperature channel rises faster than a threshold rate, then sealing failure is indicated. If pressure in the backside temperature channel does not rise faster than the threshold rate, a plasma process is continued, using the backside temperature channel to regulate a temperature of the edge ring.

公开(公告)号：US11935758B2

公开(公告)日：2024-03-19

申请号：US17600999

申请日：2020-04-27

Applicant: Lam Research Corporation

Inventor： Wenbing Yang ,  Mohand Brouri ,  Samantha SiamHwa Tan ,  Shih-Ked Lee ,  Yiwen Fan ,  Wook Choi ,  Tamal Mukherjee ,  Ran Lin ,  Yang Pan

IPC: H01L21/3213

CPC classification number: H01L21/32139 ,  H01L21/32136

Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.

公开(公告)号：US20240077138A1

公开(公告)日：2024-03-07

申请号：US18377371

申请日：2023-10-06

Applicant: Lam Research Corporation

Inventor： David SCHAEFER ,  Ambarish Chhatre ,  Keith William Gaff ,  Sung Je Kim ,  Brooke Mesler Lai

IPC: F16J15/02 ,  H01J37/32 ,  H01L21/683 ,  H02N13/00

CPC classification number: F16J15/021 ,  H01J37/32495 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/6838 ,  H02N13/00 ,  Y10T29/49908

Abstract: An edge seal for sealing an outer surface of a lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber, the lower electrode assembly including an annular groove defined between a lower member and an upper member of the lower electrode assembly. The edge seal includes an elastomeric band configured to be arranged within the groove, the elastomeric band having an annular upper surface, an annular lower surface, an inner surface, and an outer surface. When the elastomeric band is in an uncompressed state, the outer surface of the elastomeric band is concave. When the upper and lower surfaces are axially compressed at least 1% such that the elastomeric band is in a compressed state, an outward bulging of the outer surface is not greater than a predetermined distance. The predetermined distance corresponds to a maximum outer diameter of the elastomeric band in the uncompressed state.

公开(公告)号：US20240076795A1

公开(公告)日：2024-03-07

申请号：US18261734

申请日：2022-01-19

Applicant: Lam Research Corporation

Inventor： Stephen J. Banik, II ,  Gabriel Hay Graham ,  Bryan L. Buckalew ,  Robert Rash ,  Lee Peng Chua ,  Frederick Dean Wilmot ,  Chien-Chieh Lin

IPC: C25D17/00 ,  C25D3/38 ,  C25D3/60 ,  C25D17/06 ,  C25D21/10 ,  C25D21/12

CPC classification number: C25D17/001 ,  C25D3/38 ,  C25D3/60 ,  C25D17/06 ,  C25D21/10 ,  C25D21/12

Abstract: An ionically resistive ionically permeable element for use in an electroplating apparatus includes ribs to tailor hydrodynamic environment proximate a substrate during electroplating. In one implementation, the ionically resistive ionically permeable element includes a channeled portion that is at least coextensive with a plating face of the substrate, and a plurality of ribs extending from the substrate-facing surface of the channeled portion towards the substrate. Ribs include a first plurality of ribs of full maximum height and a second plurality of ribs of smaller maximum height than the full maximum height. In one implementation the ribs of smaller maximum height are disposed such that the maximum height of the ribs gradually increases in a direction from one edge of the element to the center of the element.

公开(公告)号：US11915923B2

公开(公告)日：2024-02-27

申请号：US17090821

申请日：2020-11-05

Applicant: Lam Research Corporation

Inventor： Akhil Singhal ,  Dustin Zachary Austin ,  Jeongseok Ha ,  Pei-Chi Liu

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/02041 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67069

Abstract: A plasma processing system is provided. The system includes a hydrogen gas supply and a hydrocarbon gas supply and a processing chamber. The system includes a first mass flow controller (MFC) for controlling hydrogen gas flow into the processing chamber and a second MFC for controlling hydrocarbon gas flow into the processing chamber. The system includes a plasma source for generating plasma at the processing chamber. The plasma is for etching SnO2. The system includes a controller for regulating the first MFC and the second MFC such that a ratio of hydrocarbon gas flow to the hydrogen gas flow into the processing chamber is between 1% and 60% so that when SnH4 is produced during said etching SnO2. The SnH4 is configured to react with hydrocarbon gas to produce an organotin compound that is volatilizable in a reaction that is more kinetically favorable than SnH4 decomposition into Sn powder. Producing the organotin compound enables suction of Sn out of the processing chamber to prevent Sn powder from being deposited on the surfaces of the processing chamber during said etching SnO2.