公开(公告)号：US09006112B2

公开(公告)日：2015-04-14

申请号：US13649992

申请日：2012-10-11

Applicant: ASM International. N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David de Roest ,  Dieter Pierreux ,  Kees van der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/302 ,  H01L21/28 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L29/51

CPC classification number: H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

Abstract translation: 通过原子层沉积使用锑反应物和氧源沉积氧化锑薄膜。 锑反应物可以包括卤化锑，如SbCl 3，锑烷基胺和锑醇盐，如Sb（OEt）3。 氧源可以是例如臭氧。 在一些实施方案中，氧化锑薄膜沉积在间歇式反应器中。 氧化锑薄膜可以用作例如蚀刻停止层或牺牲层。

公开(公告)号：US20130183445A1

公开(公告)日：2013-07-18

申请号：US13766469

申请日：2013-02-13

Applicant: ASM International N.V.

Inventor： Antti Rahtu ,  Eva Tois ,  Kai-Erik Elers ,  Wei-Min Li

IPC: C23C16/32

CPC classification number: H01L21/0228 ,  C23C16/32 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45553 ,  H01L21/02205 ,  H01L21/28088 ,  H01L21/285 ,  H01L21/28562 ,  H01L21/312 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3205 ,  H01L21/32055 ,  H01L21/32056 ,  H01L21/76843

Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

Abstract translation: 提供了通过原子层沉积（ALD）在基板上制造具有低杂质含量的含金属薄膜的方法。 所述方法优选包括使基板与金属源化学品，第二源化学品和沉积增强剂的交替和顺序脉冲接触。 沉积增强剂优选选自烃，氢，氢等离子体，氢原子，硅烷，锗化合物，氮化合物和硼化合物。 在一些实施方案中，沉积增强剂与生长的薄膜中的卤化物污染物反应，改善膜的性质。

公开(公告)号：US20130095664A1

公开(公告)日：2013-04-18

申请号：US13649992

申请日：2012-10-11

Applicant: ASM International. N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David de Roest ,  Dieter Pierreux ,  Kees van der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/31 ,  H01L21/311

CPC classification number: H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

公开(公告)号：US20040216665A1

公开(公告)日：2004-11-04

申请号：US10428207

申请日：2003-04-29

Applicant: ASM International N.V.

Inventor： Pekka J. Soininen ,  Sven Lindfors

IPC: C23C016/00

CPC classification number: C23C16/4412 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/45574

Abstract: A method and apparatus for depositing thin films onto a substrate is provided. The apparatus includes a gas injection structure that is positioned within a reaction chamber that has a platform. The gas injection structure may be positioned above or below the platform and comprises a first gas injector and a second gas injector. The first gas injector is in fluid communication with a first reactant source and a purge gas source. Similarly, the second gas injector is in fluid communication with a second reactant source and a purge gas source. The first and second injectors include hollow tubes with apertures opening to the reaction chamber. In one configuration, the tubes are in the form of interleaved branching tubes forming showerhead rakes. Methods are provided for deposition, in which multiple pulses of purge and reactant gases are provided for each purge and reactant step.

Abstract translation: 提供了一种用于在衬底上沉积薄膜的方法和装置。 该装置包括位于具有平台的反应室内的气体注入结构。 气体注入结构可以位于平台的上方或下方，并且包括第一气体喷射器和第二气体喷射器。 第一气体注射器与第一反应物源和净化气体源流体连通。 类似地，第二气体喷射器与第二反应物源和净化气体源流体连通。 第一和第二注射器包括具有通向反应室的孔的中空管。 在一种配置中，管是形成喷头耙的交错分支管的形式。 提供了用于沉积的方法，其中为每个吹扫和反应物步骤提供多个吹扫和反应气体脉冲。

公开(公告)号：US20040106261A1

公开(公告)日：2004-06-03

申请号：US10430703

申请日：2003-05-05

Applicant: ASM International N.V.

Inventor： Hannu Huotari ,  Suvi Haukka ,  Marko Tuominen

IPC: H01L021/4763 ,  H01L021/336 ,  H01L021/3205 ,  H01L021/31 ,  H01L021/469

CPC classification number: H01L21/28194 ,  H01L21/28088 ,  H01L21/823828 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517

Abstract: A method forms a gate stack for a semiconductor device with a desired work function of the gate electrode. The work function is adjusted by changing the overall electronegativity of the gate electrode material in the region that determines the work function of the gate electrode during the gate electrode deposition. The gate stack is deposited by an atomic layer deposition type process and the overall electronegativity of the gate electrode is tuned by introducing at least one pulse of an additional precursor to selected deposition cycles of the gate electrode. The tuning of the work function of the gate electrode can be done not only by introducing additional material into the gate electrode, but also by utilizing the effects of a graded mode deposition and thickness variations of the lower gate part of the gate electrode in combination with the effects that the incorporation of the additional material pulses offers.

Abstract translation: 一种方法形成具有期望的栅电极功函数的半导体器件的栅堆叠。 通过在栅电极沉积期间改变确定栅电极的功函数的区域中的栅极电极材料的总体电负性来调整功函数。 通过原子层沉积型工艺沉积栅极堆叠，并通过向选择的栅电极的沉积循环引入附加前体的至少一个脉冲来调节栅电极的整体电负性。 栅电极的功函数的调谐不仅可以通过向栅电极引入额外的材料，还可以通过利用栅电极的下栅极部分的分级模式淀积和厚度变化的结果与 附加材料脉冲的结合提供的效果。

公开(公告)号：US11549177B2

公开(公告)日：2023-01-10

申请号：US16709108

申请日：2019-12-10

Applicant: ASM International N.V.

Inventor： Tom E. Blomberg ,  Eva E. Tois ,  Robert Huggare ,  Jan Willem Maes ,  Vladimir Machkaoutsan ,  Dieter Pierreux

IPC: C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.

公开(公告)号：US11339474B2

公开(公告)日：2022-05-24

申请号：US16833937

申请日：2020-03-30

Applicant: ASM International N.V.

Inventor： Ernst Hendrik August Granneman ,  Leilei Hu

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  H01L21/677 ,  C23C16/54 ,  H01J37/32

Abstract: An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.

公开(公告)号：US20190301018A1

公开(公告)日：2019-10-03

申请号：US16366202

申请日：2019-03-27

Applicant: ASM International N.V.

Inventor： Chris G.M. de Ridder ,  Lucian C. Jdira ,  Bartholomeus Hans Louis Lindeboom

IPC: C23C16/46 ,  C23C16/458

Abstract: A wafer boat cooldown device comprising a bottom plate and a rotatable table that is rotatable between a number of index positions. The rotatable table comprises at least two wafer boat positions for supporting a wafer boat. A vertically extending wall structure is mounted on the rotatable table and creates, at each wafer boat position, a wafer boat chamber having a gas supply area and a gas discharge area. The wafer boat cooldown device further comprises a plenum chamber which extends under the bottom plate. The plenum chamber accommodates at least one gas/liquid heat exchanger.

公开(公告)号：US20190172708A1

公开(公告)日：2019-06-06

申请号：US16192494

申请日：2018-11-15

Applicant: ASM International N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/225 ,  H01L21/22 ,  H01L29/66

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US10157786B2

公开(公告)日：2018-12-18

申请号：US15356306

申请日：2016-11-18

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/285 ,  C23C16/04 ,  C23C16/14 ,  C23C16/455

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.