公开(公告)号：US20050260864A1

公开(公告)日：2005-11-24

申请号：US10765361

申请日：2004-01-27

Applicant: Tzu-Fang Huang ,  Yung-Cheng Lu ,  Li-Qun Xia ,  Ellie Yieh ,  Wai-Fan Yau ,  David Cheung ,  Ralf Willecke ,  Kuowei Liu ,  Ju-Hyung Lee ,  Farhad Moghadam ,  Yeming Ma

Inventor： Tzu-Fang Huang ,  Yung-Cheng Lu ,  Li-Qun Xia ,  Ellie Yieh ,  Wai-Fan Yau ,  David Cheung ,  Ralf Willecke ,  Kuowei Liu ,  Ju-Hyung Lee ,  Farhad Moghadam ,  Yeming Ma

IPC: C23C16/04 ,  C23C16/40 ,  H01L21/316 ,  H01L21/469 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76835 ,  H01L2221/1031

Abstract: A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.

Abstract translation: 氧化硅层通过有机硅化合物的等离子体增强分解产生，以沉积碳原子量至少为1％的膜。 可以引入任选的载气，以便以小于或等于有机硅化合物的流速的流速促进沉积过程。 可以通过暂时增加有机硅化合物的氧化而在氧化硅层附近形成富氧表面。

公开(公告)号：US06869896B2

公开(公告)日：2005-03-22

申请号：US10647959

申请日：2003-08-26

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC: C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31

CPC classification number: H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

Abstract translation: 一种通过有机硅化合物和包含碳的氧化气体以恒定的RF功率水平的反应沉积低介电常数膜的方法和装置。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。

公开(公告)号：US06734115B2

公开(公告)日：2004-05-11

申请号：US10229992

申请日：2002-08-27

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC: H01L2131

CPC classification number: H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

公开(公告)号：US06448187B2

公开(公告)日：2002-09-10

申请号：US09792122

申请日：2001-02-21

Applicant: Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

Inventor： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

IPC: H01L2131

CPC classification number: H01L21/02211 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3125 ,  H01L21/31633 ,  H01L21/76807

Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10W to about 500W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

Abstract translation: 用于沉积低介电常数膜的方法和装置包括沉积氧化硅基膜，优选通过有机硅化合物和氧化气体以约10W至约500W的低RF功率水平反应，将氧化硅基膜暴露于 水或疏水赋予性表面活性剂如六甲基二硅氮烷，并在升高的温度下固化氧化硅基膜。 可以在单独的微波室中增加氧化气体的离解，以有助于控制沉积膜的碳含量。 氧化硅系膜的耐湿性提高。

公开(公告)号：US06230652B1

公开(公告)日：2001-05-15

申请号：US09480923

申请日：2000-01-11

Applicant: Tsutomu Tanaka ,  Mukul Kelkar ,  Kevin Fairbairn ,  Hari Ponnekanti ,  David Cheung

Inventor： Tsutomu Tanaka ,  Mukul Kelkar ,  Kevin Fairbairn ,  Hari Ponnekanti ,  David Cheung

IPC: C23C1600

CPC classification number: H01J37/32862 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32357

Abstract: An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. In a preferred embodiment, the remote microwave plasma source efficiently provides a plasma without need for liquid-cooling the plasma applicator tube. In another embodiment, the present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a plasma with the ability to efficiently clean the chamber when needed.

Abstract translation: 根据具体实施例的用于提供用于有效清洁腔室的等离子体的升级CVD系统的装置和方法。 使用本发明的升级的CVD系统也可以实现在基板上的蚀刻或沉积层。 在一个具体实施方案中，本发明提供了一种易于拆卸，方便处理且相对便宜的微波等离子体源，作为对现有CVD设备的改进或可移除的添加。 在优选实施例中，远程微波等离子体源有效地提供等离子体，而不需要等离子体施加管的液体冷却。 在另一个实施方案中，本发明提供了一种改进的CVD装置或改进现有的CVD装置，其能够产生等离子体，其能够在需要时有效地清洁腔室。

公开(公告)号：US6098568A

公开(公告)日：2000-08-08

申请号：US980520

申请日：1997-12-01

Applicant: Sebastien Raoux ,  Mandar Mudholkar ,  William N. Taylor ,  Mark Fodor ,  Judy Huang ,  David Silvetti ,  David Cheung ,  Kevin Fairbairn

Inventor： Sebastien Raoux ,  Mandar Mudholkar ,  William N. Taylor ,  Mark Fodor ,  Judy Huang ,  David Silvetti ,  David Cheung ,  Kevin Fairbairn

IPC: H05H1/46 ,  C23C16/505 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32 ,  H01L21/31 ,  C23C16/00

CPC classification number: H01J37/32174 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082

Abstract: A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.

Abstract translation: 一种衬底处理系统，其包括陶瓷衬底保持器，其具有嵌入衬底保持器内的RF电极和与衬底保持器间隔开的气体入口歧管。 气体入口歧管将一个或多个处理气体通过多个锥形孔提供到处理系统内的衬底处理室的反应区，并且还用作第二RF电极。 每个锥形孔具有通向反应区的出口和与出口间隔开的直径小于所述出口的入口。 混合频率RF电源与连接到气体入口歧管电极的高频RF电源和连接到衬底保持器电极的低频RF电源连接到衬底处理系统。 RF滤波器和匹配网络将高频波形与低频波形分离。 这种构造允许扩大的工艺方案并且提供具有先前无法实现的物理特性的膜（包括氮化硅膜）的沉积。

公开(公告)号：USD330703S

公开(公告)日：1992-11-03

申请号：US525185

申请日：1990-05-17

Applicant: David Cheung ,  Ho L. Tse

Designer： David Cheung ,  Ho L. Tse

公开(公告)号：USD330048S

公开(公告)日：1992-10-06

申请号：US525182

申请日：1990-05-17

Applicant: David Cheung ,  Yiu H. Wai

Designer： David Cheung ,  Yiu H. Wai

公开(公告)号：USD317176S

公开(公告)日：1991-05-28

申请号：US182050

申请日：1988-04-15

Applicant: David Cheung

Designer： David Cheung

公开(公告)号：USD311523S

公开(公告)日：1990-10-23

申请号：US182314

申请日：1988-04-15

Applicant: David Cheung ,  Wu T. Yiu ,  Donny Leung

Designer： David Cheung ,  Wu T. Yiu ,  Donny Leung