公开(公告)号：US20070225823A1

公开(公告)日：2007-09-27

申请号：US11689754

申请日：2007-03-22

Applicant: Michael Hawkins ,  Dirk Pletcher ,  Brian Thomas ,  Kai Zhang ,  Hallie Brinkerhuff

Inventor： Michael Hawkins ,  Dirk Pletcher ,  Brian Thomas ,  Kai Zhang ,  Hallie Brinkerhuff

IPC: A61F2/30 ,  A61F2/28 ,  A61K6/083 ,  B05D3/10 ,  C08J7/18

CPC classification number: A61L27/52 ,  A61L27/28 ,  A61L27/50 ,  A61L2420/02 ,  A61L2430/24 ,  Y10T428/31536 ,  Y10T428/31678

Abstract: The present invention provides hydrogel coated, implantable medical devices and methods of coating hydrogels onto implantable medical devices. In one embodiment, a hydrogel coated medical device is formed by physically treating a surface of the medical device, chemically treating the surface, applying a hydrogel precursor and then crosslinking the hydrogel precursor to form a hydrogel coating on the surface of the medical device. The present invention may be particularly applicable for coating articulating surfaces on implantable medical devices such as artificial joints.

Abstract translation: 本发明提供水凝胶涂覆的可植入医疗装置和将水凝胶涂覆在可植入医疗装置上的方法。 在一个实施方案中，通过物理处理医疗装置的表面，化学处理表面，施加水凝胶前体，然后使水凝胶前体交联以在医疗装置的表面上形成水凝胶涂层而形成水凝胶涂覆的医疗装置。 本发明可以特别适用于在例如人造关节的可植入医疗装置上涂覆铰接表面。

公开(公告)号：US20070134333A1

公开(公告)日：2007-06-14

申请号：US11608128

申请日：2006-12-07

Applicant: Brian Thomas ,  Kai Zhang ,  Garryl Hudgins ,  Robert Hodorek

Inventor： Brian Thomas ,  Kai Zhang ,  Garryl Hudgins ,  Robert Hodorek

IPC: A61K47/30

CPC classification number: A61L24/06 ,  A61L24/0031 ,  A61L27/16 ,  A61L27/52 ,  C08L29/04

Abstract: This invention provides methods and processes to attach or bond hydrogels to suitable surfaces using irradiation techniques and also provides methods and processes to create crosslinked regions in hydrogel articles using these irradiation techniques. Specifically, lasers at wavelengths tuned to the irradiation absorption bands of hydroxyl groups, carboxylic acid groups or water may be used to attach or bond hydrogels to surfaces such as soft tissue and hydrogel surfaces or to crosslink regions in hydrogel articles.

Abstract translation: 本发明提供了使用照射技术将水凝胶附着或粘合到合适表面上的方法和方法，并且还提供使用这些照射技术在水凝胶制品中产生交联区域的方法和方法。 具体地，可以使用调谐到羟基，羧酸基团或水的照射吸收带的波长的激光器将水凝胶附着或粘合到表面，例如软组织和水凝胶表面，或者在水凝胶制品中交联区域。

公开(公告)号：US20070111165A1

公开(公告)日：2007-05-17

申请号：US11622171

申请日：2007-01-11

Applicant: Michael Wallick ,  Kai Zhang ,  Jeffrey Bassett

Inventor： Michael Wallick ,  Kai Zhang ,  Jeffrey Bassett

IPC: A61C13/08 ,  A61C8/00

CPC classification number: A61C8/0012 ,  A61K6/087 ,  C08L71/00

Abstract: A prosthetic dental device has an inner portion formed of an inner material and an outer portion formed of an outer material that covers at least a part of the inner portion. The inner material is substantially different from the color of natural teeth while the outer material is substantially the same color as natural teeth. Both the inner material and the outer material comprise a polymer.

Abstract translation: 假体牙科装置具有由内部材料形成的内部部分和由覆盖内部部分的至少一部分的外部材料形成的外部部分。 内部材料与天然牙齿的颜色基本上不同，而外部材料与天然牙齿基本上是相同的颜色。 内部材料和外部材料都包含聚合物。

公开(公告)号：US20070092932A1

公开(公告)日：2007-04-26

申请号：US10578096

申请日：2005-04-22

Applicant: Kai Zhang

Inventor： Kai Zhang

IPC: C12P23/00

CPC classification number: C12P23/00

Abstract: The present invention provides a method for producing a xanthophyll from a photosynthetic microalga, which includes inoculating a photosynthetic microalga containing a xanthophyll, preferably an encysted microalga, into a nutrient medium to grow the microalga; and encysting the grown microalga, by a single-step culture method in which the growth step and the encystment step are performed continuously using a nutrient medium having a low nitrogen source concentration, or by a two-step culture method in which the microalga is grown in a nutrient medium having a high nitrogen source concentration and then transferred to an encystment medium.

Abstract translation: 本发明提供了一种从光合微藻生产叶黄素的方法，其包括将含有叶黄素（优选包埋的微藻）的光合微藻接种到营养培养基中以生长微藻; 并且通过使用具有低氮源浓度的营养培养基连续进行生长步骤和包膜步骤的单步培养方法或通过其中生长微藻的两步培养方法来包埋生长的微藻 在具有高氮源浓度的营养培养基中，然后转移到包膜培养基中。

公开(公告)号：US20060064751A1

公开(公告)日：2006-03-23

申请号：US10948609

申请日：2004-09-23

Applicant: Pratima Ahuja ,  Manoj Khangaonkar ,  Kai Zhang

Inventor： Pratima Ahuja ,  Manoj Khangaonkar ,  Kai Zhang

IPC: G06F9/00

CPC classification number: H04L63/105 ,  G06F2221/2113 ,  H04L63/12 ,  H04L63/168 ,  H04L63/20

Abstract: An apparatus, system, and method are disclosed for selective, end-to-end message level security. The apparatus includes a message class definition module, a security module, and a messaging module. The message class definition module identifies a predetermined message class of an internode message. The security module applies security to the message at an application layer. The security that is applied to the message corresponds to a security level, which depends on the message class of the message. The security may include encryption, authentication, and/or other security features. The messaging module communicates the message between a first node and a second node. A third node, such as a broker, may be interposed between the first and second nodes, in which case the security of the message is preserved at the third node.

Abstract translation: 公开了用于选择性的端到端消息级安全性的装置，系统和方法。 该装置包括消息类定义模块，安全模块和消息模块。 消息类定义模块识别节点间消息的预定消息类别。 安全模块将安全性应用于应用层的消息。 应用于消息的安全性对应于安全级别，这取决于消息的消息类别。 安全性可以包括加密，认证和/或其他安全特征。 消息传递模块在第一节点和第二节点之间传送消息。 诸如代理之类的第三节点可以插入在第一和第二节点之间，在这种情况下，消息的安全性被保留在第三节点处。

公开(公告)号：US06969683B2

公开(公告)日：2005-11-29

申请号：US10750348

申请日：2003-12-31

Applicant: Rongxiang Hu ,  Yongbae Kim ,  Sang-Yun Lee ,  Hiroaki Takikawa ,  Shumay Dou ,  Sarah Neuman ,  Philippe Schoenborn ,  Keith Chao ,  Dilip Vijay ,  Kai Zhang ,  Masaichi Eda

Inventor： Rongxiang Hu ,  Yongbae Kim ,  Sang-Yun Lee ,  Hiroaki Takikawa ,  Shumay Dou ,  Sarah Neuman ,  Philippe Schoenborn ,  Keith Chao ,  Dilip Vijay ,  Kai Zhang ,  Masaichi Eda

IPC: H01L21/311 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/76831 ,  H01L21/31144 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76826 ,  H01L21/76829

Abstract: A method for forming a dual damascene interconnect in a dielectric layer is provided. Generally, a first aperture is etched in the dielectric. A poison barrier layer is formed over part of the dielectric, which prevents resist poisoning. A patterned mask is formed over the poison barrier layer. A second aperture is etched into the dielectric layer, wherein at least part of the first aperture shares the same area as at least part of the second aperture.

Abstract translation: 提供了一种在电介质层中形成双镶嵌互连的方法。 通常，在电介质中蚀刻第一孔。 在电介质的一部分上形成中毒阻挡层，防止抗蚀剂中毒。 在毒物屏障层上形成图案化掩模。 第二孔被蚀刻到电介质层中，其中第一孔的至少一部分具有与第二孔的至少一部分相同的面积。

公开(公告)号：US06559033B1

公开(公告)日：2003-05-06

申请号：US09892250

申请日：2001-06-27

Applicant: John Rongxiang Hu ,  Kai Zhang ,  Senthil K. Arthanari ,  Hong-Qiang Michael Lu

Inventor： John Rongxiang Hu ,  Kai Zhang ,  Senthil K. Arthanari ,  Hong-Qiang Michael Lu

IPC: H01L2176

CPC classification number: H01L21/76264 ,  H01L21/76283 ,  H01L21/76802 ,  H01L21/76819 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76837

Abstract: Protective caps are formed over horizontally closely spaced apart metal lines of an integrated circuit structure. Low k silicon oxide dielectric material is then deposited over and between the metal lines and over protective caps on the lines. After the formation of such low k material between the lines and over the caps, standard k dielectric material is deposited over the low k layer as a planarizing layer over low portions of the low k layer between the lines which may be lower than the top of the caps on the lines to prevent further etching or dishing of the low k layer of during planarizing. The structure is then planarized to bring the low k dielectric material down to the tops of the protective caps on the metal lines. A layer of standard k silicon material is then formed over the planarized low k layer and the caps to allow via formation without passing through the low k layer to avoid via poisoning.

Abstract translation: 保护盖形成在集成电路结构的水平间隔开的金属线上。 然后将低k氧化硅电介质材料沉积在金属线之间和之间并且在线上的保护帽上方。 在线之间和帽之上形成这样的低k材料之后，标准k电介质材料沉积在低k层上作为在低k层之间的低k层的低部分之上的平坦化层，其可以低于 线上的帽，以防止在平坦化期间进一步蚀刻或凹陷低k层。 然后将该结构平坦化以将低k电介质材料降低到金属线上的保护帽的顶部。 然后在平坦化的低k层和盖上形成标准k硅材料层，以允许通孔形成而不通过低k层以避免通过中毒。

公开(公告)号：US06503840B2

公开(公告)日：2003-01-07

申请号：US09848758

申请日：2001-05-02

Applicant: Wilbur G. Catabay ,  Wei-Jen Hsia ,  Hong-Qiang Lu ,  Yong-Bae Kim ,  Kiran Kumar ,  Kai Zhang ,  Richard Schinella ,  Philippe Schoenborn

Inventor： Wilbur G. Catabay ,  Wei-Jen Hsia ,  Hong-Qiang Lu ,  Yong-Bae Kim ,  Kiran Kumar ,  Kai Zhang ,  Richard Schinella ,  Philippe Schoenborn

IPC: H01L21302

CPC classification number: H01L21/31144 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843

Abstract: A composite layer of dielectric material is first formed over the integrated circuit structure, comprising a thin barrier layer of dielectric material, a layer of low k dielectric material over the barrier layer, and a thin capping layer of dielectric material over the layer of low k dielectric material. A photoresist mask, formed over the capping layer, is baked in the presence of UV light to cross-link the mask material. The composite layer is then etched through the resist mask using an etchant gas mixture including CO, but not oxygen. Newly exposed surfaces of low k dielectric material are then optionally densified to harden them. The resist mask is then removed using a plasma of a neutral or reducing gas. Exposed surfaces of low k dielectric material are then passivated by a low power oxygen plasma. Preferably, optional densification, mask removal, and passivation are all done in the same vacuum apparatus. The substrate is then solvent cleaned to remove etch residues and then annealed to degasify the low k dielectric material. The substrate is then RF cleaned and a thin layer of PVD titanium is then formed in the same chamber over the surfaces of the openings. CVD titanium nitride is then formed over the titanium in the same vacuum apparatus. The coated openings are then filled with aluminum, tungsten, or copper.

公开(公告)号：US06075205A

公开(公告)日：2000-06-13

申请号：US44485

申请日：1998-03-19

Applicant: Kai Zhang

Inventor： Kai Zhang

IPC: H05K9/00

CPC classification number: H05K9/0015 ,  Y10S277/92

Abstract: An EMI shielding and environmental sealing gasket for interposition between a first substrate and an oppositely-disposed second substrate. The gasket is formed of a resilient, tubular body having a generally continuous interior and exterior surface defining a wall thickness of the gasket therebetween, and including base, arcuate, and lateral members. The base member extends intermediate a first and a second edge and has an inner and outer for contact with the second substrate. The arcuate member, which has an inner surface spaced apart radially from the inner surface of the base member and an outer surface for contact with the first substrate, extends intermediate a first proximal end disposed radially inwardly of the first edge of the base member, and a second proximal end disposed radially inwardly of the second edge of the base member. A first lateral member extends from the first edge of the base member to the first proximal end of the arcuate member, with a second lateral member extending from the second edge of the base member to the second proximal end of the arcuate member. Each of the lateral members has an outer surface and an inner surface which defines a acute angle with the inner surface of the base member. The gasket so constructed is deflectable under a predetermined compressive force between the first and second substrates into a collasped orientation characterized in that substantially continuous contact is maintained between the outer surface of the base member and the second substrate.

Abstract translation: 用于插入在第一基板和相对布置的第二基板之间的EMI屏蔽和环境密封垫圈。 垫圈由具有大致连续的内表面和外表面的弹性管状体形成，其限定了垫片之间的壁厚，并且包括基部，弓形和侧向构件。 基部构件在第一和第二边缘的中间延伸并且具有用于与第二基板接触的内部和外部。 具有与基部构件的内表面径向间隔开的内表面和与第一基板接触的外表面的弧形构件在设置在基座构件的第一边缘的径向内侧的第一近端处延伸，以及 设置在所述基座构件的第二边缘的径向内侧的第二近端。 第一横向构件从基部构件的第一边缘延伸到弓形构件的第一近端，第二横向构件从基部构件的第二边缘延伸到弓形构件的第二近端。 每个横向构件具有与基部构件的内表面形成锐角的外表面和内表面。 如此构造的垫圈在第一和第二基板之间的预定压缩力下可偏转成为凸起的取向，其特征在于，在基部构件的外表面和第二基板之间保持基本上连续的接触。

公开(公告)号：US6018418A

公开(公告)日：2000-01-25

申请号：US244285

申请日：1999-02-03

Applicant: Jing-Jong J. Pan ,  Kai Zhang ,  Yonglin Huang

Inventor： Jing-Jong J. Pan ,  Kai Zhang ,  Yonglin Huang

IPC: G02B5/30 ,  G02B6/34 ,  G02B27/28

CPC classification number: G02B6/2713 ,  G02B27/283 ,  G02B5/3083 ,  G02B6/2773

Abstract: An improved polarization beam splitter formed by a collimator and two similarly shaped, birefringent crystal prisms is provided. The light from the collimator is incident upon the first face of the first birefringent crystal prism which also has second and third faces. The collimated light is incident upon the second face at an angle .phi. with respect to a line normal to the second face so that light polarized perpendicular to a plane of incidence upon the second face is reflected toward the third face and light polarized in the plane of incidence is refracted at the second face. The second birefringent crystal prism has a second face parallel to, and in close proximity with, the second face of the first birefringent prism so that light refracted at the second face of said first prism is refracted at the second face of the second prism and into the second prism. A first face of the second prism is positioned with respect to its second face so that light refracted into the second prism is refracted at the first face from the second prism cross-sectionally undistorted with respect to a cross-section of the light polarized in the plane of incidence at the second face of the first prism. This polarization beam splitter can handle high power without distorting the beam.

Abstract translation: 提供了由准直器和两个类似形状的双折射晶体棱镜形成的改进的偏振分束器。 来自准直器的光入射到第一双折射晶体棱镜的第一面上，该第一双折射晶体棱镜也具有第二和第三面。 准直光以与第二面垂直的线成角度地入射在第二面上，使得垂直于第二面的入射平面偏振的光被朝向第三面反射，并且在 发生率在第二面折射。 第二双折射晶体棱镜具有与第一双折射棱镜的第二面平行且非常接近的第二面，使得在所述第一棱镜的第二面处折射的光在第二棱镜的第二面折射并且进入 第二棱镜。 第二棱镜的第一面相对于其第二面定位，使得折射入第二棱镜的光在第一面处从第二棱镜折射成相对于在第二棱镜的偏振光的横截面为横截面不变形 在第一棱镜的第二面处的入射面。 该偏振分束器可以处理高功率而不会使光束失真。