公开(公告)号：US08114976B2

公开(公告)日：2012-02-14

申请号：US11575245

申请日：2005-09-07

Applicant: Gregory Buck ,  Luis Shozo Ozaki ,  Yingping Wang ,  Ping Xu ,  Myma Garcia Serrano ,  Patrico A. Manque ,  Joao Marcelo Pereira Alves ,  Daniela Puiu

Inventor： Gregory Buck ,  Luis Shozo Ozaki ,  Yingping Wang ,  Ping Xu ,  Myma Garcia Serrano ,  Patrico A. Manque ,  Joao Marcelo Pereira Alves ,  Daniela Puiu

IPC: C07H21/04 ,  C12P21/06

CPC classification number: C12Q1/6893 ,  A61K39/00 ,  C07K14/44 ,  G01N2333/44 ,  Y02A50/488 ,  Y02A50/489

Abstract: Cryptosporidium hominis genes and gene products are provided. The genes and gene products are useful for chemotherapeutic, immunotherapeutic, immunoprophylactic and diagnostic applications.

Abstract translation: 提供人隐球菌基因和基因产物。 基因和基因产物可用于化学治疗，免疫治疗，免疫预防和诊断应用。

公开(公告)号：US08067212B2

公开(公告)日：2011-11-29

申请号：US12302275

申请日：2007-05-25

Applicant: Ping Xu ,  Zijun Xiao ,  Zhonghao Wei ,  Yi Du

Inventor： Ping Xu ,  Zijun Xiao ,  Zhonghao Wei ,  Yi Du

IPC: C12P17/00 ,  C12N1/20

CPC classification number: C12R1/07 ,  C12P17/12 ,  Y10S435/832

Abstract: This invention provides a high-yield bacterial strain for producing tetramethylpyrazine named Bacillus pumilus RX3-17. The strain has been deposited in China Center for Type Culture Collection on Apr. 19, 2006. The deposit number is CCTCC M 206043. The bacterial strain, isolated from soil, is rod-shaped, 1.5 μm to 3.0 μm in length and 0.6 μm to 0.7 μm in diameter. The colony color of the strain is milky-white. The strain has typical physiological and biochemical characteristics of Bacillus pumilus. The 16s rDNA sequence of this strain shares a similarity of 99% with other Bacillus pumilus strains. This invention belongs to the domain of biotechnology. The strain can be applied to the production of tetramethylpyrazine with glucose as the substrate, solving the bottleneck of low yield in bacterial tetramethylpyrazine fermentation.

Abstract translation: 本发明提供了用于生产称为短小芽孢杆菌RX3-17的四甲基吡嗪的高产菌株。 该菌株已于2006年4月19日保藏在中国型号培养物中心中心。沉积物编号为CCTCC M 206043.从土壤中分离的细菌菌株为棒状，长度为1.5〜3.0μm，0.6μm 直径为0.7μm。 菌株的菌落颜色是乳白色的。 该菌株具有典型的生物和生化特性的短小芽孢杆菌。 该菌株的16s rDNA序列与其他短小芽孢杆菌菌株具有99％的相似性。 本发明属于生物科技领域。 该菌株可用于以葡萄糖为底物生产四甲基吡嗪，解决细菌四甲基吡嗪发酵中低产量的瓶颈。

公开(公告)号：US20090186399A1

公开(公告)日：2009-07-23

申请号：US12302502

申请日：2007-06-25

Applicant: Ping Xu ,  Dongliang Hua ,  Shan Lin ,  Lifu Song ,  Cuiqing Ma ,  Zhaobin Zhang ,  Yi Du ,  Hong Chen ,  Lin Gan ,  Zhonghao Wei ,  Yiyong Zeng

Inventor： Ping Xu ,  Dongliang Hua ,  Shan Lin ,  Lifu Song ,  Cuiqing Ma ,  Zhaobin Zhang ,  Yi Du ,  Hong Chen ,  Lin Gan ,  Zhonghao Wei ,  Yiyong Zeng

IPC: C12N1/20

CPC classification number: C12R1/465 ,  C12P7/24

Abstract: A method of vanillin production from ferulic acid with a high concentration by biotransformation using a Streptomyces sp. strain is claimed in this invention. This strain is named as Streptomyces sp. V-1, which has been deposited in China Center for Type Culture Collection on Jul. 12, 2006 with the number of CCTCC M 206065. Using this strain, high concentration of vanillin fermentation broth is obtained from ferulic acid by biotransformation in GY biotransformation medium. With the addition of macroporous adsorbent resin DM11, the concentration of vanillin can be greatly improved. The advantage of this invention is less environmental pollution, high product concentration, less by-product, short processing cycle, low production cost, simple product extraction, clean production process, product environmental friendly, safe and reliable, which solves many difficulties in the vanillin production from botanical raw material extraction or chemical synthesis, and therefore it has good application prospect.

Abstract translation: 通过使用链霉菌（Streptomyces sp。）通过生物转化从高浓度的阿魏酸生产香草醛的方法。 应变在本发明中要求保护。 该菌株被命名为Streptomyces sp。 V-1已于2006年7月12日以CCTCC M 206065号存于中国型号培养物中心中心。使用该菌株，通过生物转化在GY生物转化培养基中从阿魏酸获得高浓度的香草醛发酵液 。 通过添加大孔吸附树脂DM11，可以大大提高香草醛的浓度。 本发明的优点是环境污染少，产品浓缩少，加工周期短，生产成本低，产品提取简单，生产过程简单，产品环保，安全可靠，解决了香草醛中的许多困难 生产从植物原料提取或化学合成，因此具有良好的应用前景。

公开(公告)号：US07319068B2

公开(公告)日：2008-01-15

申请号：US11537928

申请日：2006-10-02

Applicant: Li-Qun Xia ,  Ping Xu ,  Louis Yang

Inventor： Li-Qun Xia ,  Ping Xu ,  Louis Yang

IPC: H01L21/31

CPC classification number: H01L21/76835 ,  C23C16/325 ,  H01L21/0206 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

Abstract: A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Abstract translation: 提供了一种处理基材的方法，包括提供包含含有苯基的有机硅化合物的处理气体至处理室，并使处理气体反应沉积在大马士革或双镶嵌中可用作阻挡层的低k碳化硅阻挡层 低k电介质材料的应用。

公开(公告)号：US20070159853A1

公开(公告)日：2007-07-12

申请号：US11541925

申请日：2006-10-02

Applicant: Shi-Ping Xu

Inventor： Shi-Ping Xu

IPC: F21V7/04

CPC classification number: G02B6/0013 ,  G02B6/0068 ,  G02B6/0083 ,  G02B6/0091 ,  G02F1/133615

Abstract: A backlight module includes a frame, a light guide plate, a FPCB and a plurality of point light sources. The light guide plate has a light incident surface. The point light sources are electrically connected with one surface of the FPCB, each point light source having an emitting surface. The frame includes a plurality of connecting sidewalls encircling the light guide plate. An inner surface of the sidewall facing the light incident surface defines a plurality of elastic members thereon according to the point light sources. Each elastic member pushes the corresponding point light source towards the light guide plate, so as to have the final position of the emitting surface of each point light source come in contact with the light incident surface. The present backlight module has a highly light energy utilization rate.

Abstract translation: 背光模块包括框架，导光板，FPCB和多个点光源。 导光板具有光入射面。 点光源与FPCB的一个表面电连接，每个点光源具有发射表面。 框架包括围绕导光板的多个连接侧壁。 面对光入射表面的侧壁的内表面根据点光源在其上限定多个弹性构件。 每个弹性构件将相应的点光源推向导光板，使得每个点光源的发射表面的最终位置与光入射表面接触。 本背光模块具有高的光能利用率。

公开(公告)号：US07095297B2

公开(公告)日：2006-08-22

申请号：US10291633

申请日：2002-11-12

Applicant: Yong Ping Xu ,  Wai Hoong Sun ,  Xiaofeng Wang ,  Zhe Wang ,  Sean Ian Saxon Liw

Inventor： Yong Ping Xu ,  Wai Hoong Sun ,  Xiaofeng Wang ,  Zhe Wang ,  Sean Ian Saxon Liw

IPC: H03H9/02 ,  H03M3/02

CPC classification number: H03H9/02433 ,  H03H9/02818

Abstract: A cancellation circuit to remove the anti-resonance signal from a resonator. Micro-mechanical and surface and bulk acoustic wave resonators include an anti-resonance in an output signal. This has an undesirable effect on certain types of systems in their function and performance. An anti-resonance cancellation circuit removes the anti-resonance from the output of the resonators by providing a signal which is subtracted from the output of the resonator. The cancellation circuit includes a capacitor which is matched to the static capacitance of the resonator. The loads of the resonator and cancellation network are also matched.

公开(公告)号：US20050020048A1

公开(公告)日：2005-01-27

申请号：US10894872

申请日：2004-07-20

Applicant: Srinivas Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

Inventor： Srinivas Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

IPC: C23C16/42 ,  C23C16/32 ,  H01L21/20 ,  H01L21/314 ,  H01L21/768 ,  H01L23/522 ,  H01L21/331

CPC classification number: H01L21/76834 ,  C23C16/325 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76829 ,  Y10S438/931

Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

Abstract translation: 提供了一种形成用于集成电路制造工艺中的碳化硅层的方法。 碳化硅层通过在电场存在下使包含硅源，碳源和掺杂剂的气体混合物反应而形成。 沉积的碳化硅层具有随后期形成期间作为气体混合物中存在的掺杂剂量的函数而变化的压缩性。

公开(公告)号：US06794311B2

公开(公告)日：2004-09-21

申请号：US09902518

申请日：2001-07-10

Applicant: Kegang Huang ,  Judy H Huang ,  Ping Xu

Inventor： Kegang Huang ,  Judy H Huang ,  Ping Xu

IPC: H01L2131

CPC classification number: C23C16/325 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10S438/931

Abstract: Methods and apparatus for depositing low dielectric constant layers that are resistant to oxygen diffusion and have low oxygen contents are provided. The layers may be formed by exposing a low dielectric constant layer to a plasma of an inert gas to densify the low dielectric constant layer, by exposing the low dielectric constant layer to a nitrating plasma to form a passivating nitride surface on the layer, or by depositing a thin passivating layer on the low dielectric constant layer to reduce oxygen diffusion therein. The low dielectric constant layer may be deposited and treated in situ.

Abstract translation: 提供了用于沉积耐氧扩散和氧含量低的低介电常数层的方法和装置。 可以通过将低介电常数层暴露于惰性气体的等离子体来致密化低介电常数层，通过将低介电常数层暴露于硝化等离子体以在层上形成钝化氮化物表面，或通过 在低介电常数层上沉积薄钝化层以减少其中的氧扩散。 低介电常数层可以原位沉积和处理。

公开(公告)号：US06777171B2

公开(公告)日：2004-08-17

申请号：US09839869

申请日：2001-04-20

Applicant: Ping Xu ,  Jia Lee ,  Ishing Lou ,  Li-Qun Xia

Inventor： Ping Xu ,  Jia Lee ,  Ishing Lou ,  Li-Qun Xia

IPC: H01L2131

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/325 ,  C23C16/345 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3127 ,  H01L21/314 ,  H01L21/3146 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76802 ,  H01L21/76813 ,  H01L21/76826 ,  H01L21/76829

Abstract: A method of forming a silicon carbide layer, a silicon nitride layer, an organosilicate layer is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a fluorine source in the presence of an electric field. The silicon nitride layer is formed by reacting a gas mixture comprising a silicon source, a nitrogen source, and a fluorine source in the presence of an electric field. The organosilicate layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, an oxygen source and a fluorine source in the presence of an electric field. The silicon carbide layer, the silicon nitride layer and the organosilicate layer are all compatible with integrated circuit fabrication processes.

Abstract translation: 公开了一种形成碳化硅层，氮化硅层，有机硅酸盐层的方法。 在存在电场的情况下使包含硅源，碳源和氟源的气体混合物反应形成碳化硅层。 氮化硅层通过在电场存在下使包含硅源，氮源和氟源的气体混合物反应而形成。 有机硅酸盐层通过在电场存在下使包含硅源，碳源，氧源和氟源的气体混合物反应而形成。 碳化硅层，氮化硅层和有机硅酸盐层都与集成电路制造工艺兼容。

公开(公告)号：US06656837B2

公开(公告)日：2003-12-02

申请号：US09977008

申请日：2001-10-11

Applicant: Ping Xu ,  Li-Qun Xia ,  Larry A. Dworkin ,  Mehul Naik

Inventor： Ping Xu ,  Li-Qun Xia ,  Larry A. Dworkin ,  Mehul Naik

IPC: H01L2144

CPC classification number: H01L21/0234 ,  C23C16/325 ,  C23C16/401 ,  G03F7/16 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3148 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76832 ,  Y10S257/914

Abstract: A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.