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    Shunt switch at common port to reduce hot switching
    81.
    发明授权
    Shunt switch at common port to reduce hot switching 有权
    在公共端口分流开关，以减少热切换

    公开(公告)号：US09156677B2

    公开(公告)日：2015-10-13

    申请号：US13764324

    申请日：2013-02-11

    Applicant: RF Micro Devices, Inc.

    Inventor： Ruediger Bauder ,  Nadim Khlat ,  Julio Costa ,  Jonathan Hammond

    IPC: H03F1/50 ,  B81B7/00 ,  H04W52/02

    CPC classification number: B81B7/0022 ,  B81B2201/014 ,  B81C1/00976 ,  H01H59/0009 ,  H04W52/02

    Abstract: Pilot switch circuitry grounds a hot node (an injection node) of a microelectromechanical system (MEMS) switch to reduce or eliminate arcing between a cantilever contact and a terminal contact when the MEMS switch is opened or closed. The pilot switch circuitry grounds the hot node prior to, during, and after the cantilever contact and terminal contact of the MEMS come into contact with one another (when the MEMS switch is closed). Additionally, the pilot switch circuitry grounds the hot node prior to, during, and after the cantilever contact and terminal contact of the MEMS disengage from one another (when the MEMS switch is opened).

    Abstract translation: 导向开关电路将微机电系统（MEMS）开关的热节点（注入节点）接地，以在MEMS开关打开或关闭时减少或消除悬臂触点和端子触点之间的电弧。 在MEMS悬臂接触之前，期间和之后，导频开关电路将热节点接地，并且MEMS的端子接触彼此接触（当MEMS开关闭合时）。 此外，导频开关电路在MEMS的彼此脱离接合之前，之中和之后，以及MEMS的彼此脱离接合（当MEMS开关断开时）接地。

    SEMICONDUCTOR DEVICE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR MAKING THE SAME
    82.
    发明申请
    SEMICONDUCTOR DEVICE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR MAKING THE SAME 有权
    具有降低漏电流的半导体器件及其制造方法

    公开(公告)号：US20150255560A1

    公开(公告)日：2015-09-10

    申请号：US14627340

    申请日：2015-02-20

    Applicant: RF Micro Devices, Inc.

    Inventor： Haldane S. Henry ,  Eunki Hong ,  Charles S. Whitman

    IPC: H01L29/47 ,  H01L21/02 ,  H01L29/20 ,  H01L21/285 ,  H01L29/812 ,  H01L29/66

    CPC classification number: H01L29/475 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/66863 ,  H01L29/812

    Abstract: A semiconductor device with reduced leakage current and a method of making the same is disclosed. The semiconductor device includes a substrate having a device layer, a dielectric layer, and a gate metal opening within the dielectric layer between a source contact and a gate contact. A first metal layer is disposed within the gate metal opening, and a second metal layer is disposed directly onto the second metal layer, wherein the second metal layer is oxidized and has a thickness that ranges from about 4 Angstroms to about 20 Angstroms to limit a leakage current of a total gate periphery to between around 0.1 μA/mm and around 50 μA/mm. A current carrying layer is disposed on the second metal layer. In one embodiment, the first metal layer is nickel (Ni), the second metal layer is palladium (Pd), and the current carrying layer is gold (Au).

    Abstract translation: 公开了一种具有减小的漏电流的半导体器件及其制造方法。 半导体器件包括在源极接触和栅极接触之间的介电层内具有器件层，电介质层和栅极金属开口的衬底。 第一金属层设置在栅极金属开口内，并且第二金属层直接设置在第二金属层上，其中第二金属层被氧化并且具有在约4埃至约20埃的范围内以限制 总门外围的漏电流在约0.1μA/ mm到约50μA/ mm之间。 载流层设置在第二金属层上。 在一个实施例中，第一金属层是镍（Ni），第二金属层是钯（Pd），载流层是金（Au）。

    UNBALANCED LINEAR POWER AMPLIFIER
    83.
    发明申请
    UNBALANCED LINEAR POWER AMPLIFIER 有权
    不平衡线性功率放大器

    公开(公告)号：US20150214909A1

    公开(公告)日：2015-07-30

    申请号：US14606375

    申请日：2015-01-27

    Applicant: RF Micro Devices, Inc.

    Inventor： Kevin Wesley Kobayashi

    IPC: H03F3/21 ,  H03F1/32 ,  H03F1/56 ,  H03F3/19

    CPC classification number: H03F1/56 ,  H03F1/0261 ,  H03F1/32 ,  H03F1/565 ,  H03F3/602 ,  H03F2200/192 ,  H03F2200/198 ,  H03F2200/204 ,  H03F2201/3215

    Abstract: An unbalanced linear power amplifier (PA) is disclosed having a quadrature coupler with a 90° phase input port, a 0° phase input port, an output termination port, and a signal output port. Each of the 90° phase input port, the 0° phase input port, the output termination port, and the signal output port have a characteristic resistance (Ro). Also included is a first PA having an output coupled to a 90° phase input port of the quadrature coupler and a second PA having an output coupled to a 0° phase input port of the quadrature coupler. Biasing circuitry provides the first PA and the second PA with a similar gain. A tuning network is coupled between the output termination port and ground. The tuning network has an isolation resistance in series with an isolation inductance, wherein the isolation resistance is between about 0.02*Ro Ω and 0.8*Ro Ω.

    Abstract translation: 公开了一种具有90°相位输入端口，0°相位输入端口，输出端接端口和信号输出端口的正交耦合器的不平衡线性功率放大器（PA）。 90°相位输入端口，0°相位输入端口，输出端接端口和信号输出端口均具有特性电阻（Ro）。 还包括具有耦合到正交耦合器的90°相位输入端口的输出的第一PA和具有耦合到正交耦合器的0°相位输入端口的输出的第二PA。 偏置电路为第一个PA和第二个PA提供了类似的增益。 调谐网络耦合在输出终端端口和地之间。 调谐网络具有与隔离电感串联的隔离电阻，其中隔离电阻介于约0.02 * Ro＆OHgr之间; 和0.8 * Ro＆OHgr;

    Methods for fabricating high voltage field effect transistor finger terminations
    84.
    发明授权
    Methods for fabricating high voltage field effect transistor finger terminations 有权
    制造高电压场效应晶体管手指终端的方法

    公开(公告)号：US09093420B2

    公开(公告)日：2015-07-28

    申请号：US13795986

    申请日：2013-03-12

    Applicant: RF Micro Devices, Inc.

    Inventor： Kevin Wesley Kobayashi ,  Haldane S. Henry ,  Andrew P. Ritenour

    IPC: H01L21/84 ,  H01L29/423 ,  H01L29/812 ,  H01L29/66 ,  H01L29/40 ,  H01L29/417 ,  H01L29/778 ,  H01L29/16 ,  H01L29/20

    CPC classification number: H01L29/402 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/7787 ,  H01L29/80 ,  H01L29/812

    Abstract: Methods for fabricating a field effect transistor having at least one structure configured to redistribute and/or reduce an electric field from gate finger ends are disclosed. The methods provide field effect transistors that each include a substrate, an active region disposed on the substrate, at least one source finger in contact with the active region, at least one drain finger in contact with the active region, and at least one gate finger in rectifying contact with the active region. One embodiment has at least one end of the at least one gate finger extending outside of the active region. At least one method includes etching at least one gate channel into the passivation layer with a predetermined slope that reduces electric fields at a gate edge. Other methods include steps for fabricating a sloped gate foot, a round end, and/or a chamfered end to further improve high voltage operation.

    Abstract translation: 公开了制造具有至少一种结构的场效应晶体管的方法，该结构被配置为重新分布和/或减少栅极指末端的电场。 这些方法提供场效应晶体管，其各自包括衬底，设置在衬底上的有源区，与有源区接触的至少一个源极指，与有源区接触的至少一个漏极指，以及至少一个栅极指 与活性区域整流接触。 一个实施例具有至少一个门指的至少一端延伸到有源区的外部。 至少一种方法包括以预定斜率将至少一个栅极通道蚀刻到钝化层中，该斜率减小栅极边缘处的电场。 其他方法包括用于制造倾斜门脚，圆端和/或倒角端的步骤，以进一步改善高压操作。

    Front end radio architecture having a split band arrangement with co-banding
    85.
    发明授权
    Front end radio architecture having a split band arrangement with co-banding 有权
    前端无线电架构具有共带绑带的分离带布置

    公开(公告)号：US09088326B2

    公开(公告)日：2015-07-21

    申请号：US13921285

    申请日：2013-06-19

    Applicant: RF Micro Devices, Inc.

    Inventor： Nadim Khlat

    IPC: H04B1/10

    CPC classification number: H04B1/10 ,  H04B1/0057

    Abstract: A front end radio architecture is configured to provide a split band frequency arrangement that includes co-banding. The disclosed split band frequency arrangement combines a medium bandwidth filter with a small bandwidth filter to provide enough bandwidth to pass a relatively large communication band. The medium bandwidth filter has a bandwidth that is large enough to support co-banding of smaller communication bands, while also having a narrow enough bandwidth to realize a relatively steep roll-off that ensures coexistence with adjacent bands that are not co-banded. The bandwidths of the medium bandwidth filter and the small bandwidth filter overlap in bandwidth by an amount that is at least as large as the highest bandwidth signal expected to be received or transmitted. The split band frequency arrangement reduces the number of filters needed in the front end radio architecture by repurposing the small bandwidth filter, and by co-banding the smaller communication bands.

    Abstract translation: 前端无线电架构被配置为提供包括共带的分离频带频率布置。 所公开的分段频率布置将中带宽滤波器与小带宽滤波器组合以提供足够的带宽以通过相对较大的通信频带。 中带宽滤波器具有足够大的带宽以支持较小通信频带的共带，同时还具有足够窄的带宽以实现相对陡峭的滚降，确保与未共同带状的相邻频带共存。 中带宽滤波器和小带宽滤波器的带宽在带宽中重叠的量至少与预期接收或发送的最高带宽信号一样大。 分频带频率布置通过重新利用小带宽滤波器以及通过共同划分较小的通信频带来减少前端无线电架构中所需的滤波器的数量。

    Tunable hybrid coupler
    86.
    发明授权
    Tunable hybrid coupler 有权
    可调混合耦合器

    公开(公告)号：US09083518B2

    公开(公告)日：2015-07-14

    申请号：US13760240

    申请日：2013-02-06

    Applicant: RF Micro Devices, Inc.

    Inventor： Ruediger Bauder ,  Marcus Granger-Jones ,  Nadim Khlat

    IPC: H04B1/56 ,  H04L5/14 ,  H03H7/48 ,  H04L25/03 ,  H04B1/525

    CPC classification number: H04L5/14 ,  H03H7/48 ,  H04B1/44 ,  H04B1/525 ,  H04L25/03878

    Abstract: This disclosure includes embodiments of a tunable hybrid coupler. The tunable hybrid coupler includes a first inductive element having a first inductance, a second inductive element having a second inductance and mutually coupled to the first inductive element, a first variable capacitive element having a first variable capacitance, and a second variable capacitance having a second variable capacitance. The first variable capacitive element is coupled between a first port and a second port. The second variable capacitive element is coupled between a third port and a fourth port. The first inductive element is coupled from the first port to the third port, while the second inductive element is coupled from the second port to the fourth port. Accordingly, the tunable hybrid coupler may form an impedance matching network that is tunable to different radio frequency (RF) communication bands. The tunable hybrid coupler can be used in a tunable RF duplexer.

    Abstract translation: 本公开包括可调混合耦合器的实施例。 可调混合耦合器包括具有第一电感的第一电感元件，具有第二电感并且相互耦合到第一电感元件的第二电感元件，具有第一可变电容的第一可变电容元件和具有第二可变电容的第二可变电容 可变电容。 第一可变电容元件耦合在第一端口和第二端口之间。 第二可变电容元件耦合在第三端口和第四端口之间。 第一电感元件从第一端口耦合到第三端口，而第二电感元件从第二端口耦合到第四端口。 因此，可调混合耦合器可以形成可调谐到不同射频（RF）通信频带的阻抗匹配网络。 可调混合耦合器可用于可调谐RF双工器。

    RF DIPLEXER
    89.
    发明申请
    RF DIPLEXER 有权

    公开(公告)号：US20150117281A1

    公开(公告)日：2015-04-30

    申请号：US14547502

    申请日：2014-11-19

    Applicant: RF Micro Devices, Inc.

    Inventor： Nadim Khlat ,  Marcus Granger-Jones

    IPC: H04L5/08

    CPC classification number: H03H7/463 ,  H03H7/48 ,  H04B1/0057 ,  H04B1/40 ,  H04B1/50 ,  H04B10/556 ,  H04L5/08 ,  H04L27/2085

    Abstract: Embodiments of a tunable radio frequency (RF) diplexer and methods of operating the same are disclosed. In one embodiment, the RF diplexer includes a first hybrid coupler, a second hybrid coupler, an RF filter circuit, and a phase inversion component. Both the RF filter circuit and the phase inversion component are connected between the first hybrid coupler and the second hybrid coupler. The phase inversion component is configured to provide approximately a differential phase. The RF filter circuit is configured to provide a passband and a notch. The RF filter circuit is tunable to provide the notch on both a high-frequency side of the passband and a low frequency side of the passband. Accordingly, the tunable RF diplexer provides lower insertion losses and higher isolation regardless of whether the one of the diplexed frequency bands is set at higher frequencies or lower frequencies than the other diplexed frequency band.

    Abstract translation: 公开了可调谐射频（RF）双工器的实施例及其操作方法。 在一个实施例中，RF双工器包括第一混合耦合器，第二混合耦合器，RF滤波器电路和相位反转分量。 RF滤波器电路和相位反转分量都连接在第一混合耦合器和第二混合耦合器之间。 相位反转分量被配置为提供大致差分相位。 RF滤波器电路被配置为提供通带和陷波。 RF滤波器电路是可调谐的，以在通带的高频侧和通带的低频侧提供陷波。 因此，可调谐RF双工器提供较低的插入损耗和更高的隔离度，而不管双工频带中的一个是否设置在比另一个双工频带更高的频率或更低的频率。

    HETEROJUNCTION BIPOLAR TRANSISTOR GEOMETRY FOR IMPROVED POWER AMPLIFIER PERFORMANCE
    90.
    发明申请
    HETEROJUNCTION BIPOLAR TRANSISTOR GEOMETRY FOR IMPROVED POWER AMPLIFIER PERFORMANCE 有权
    用于改进功率放大器性能的异质双极晶体管几何

    公开(公告)号：US20150102389A1

    公开(公告)日：2015-04-16

    申请号：US14051998

    申请日：2013-10-11

    Applicant: RF Micro Devices, Inc.

    Inventor： Brian G. Moser ,  Robert Saxer ,  Jing Zhang

    IPC: H01L29/737 ,  H01L29/10

    CPC classification number: H01L29/7371 ,  H01L29/0692 ,  H01L29/0813 ,  H01L29/0817 ,  H01L29/0826 ,  H01L29/42304

    Abstract: A heterojunction bipolar transistor includes a base mesa, an emitter assembly formed over the base mesa, and a base contact. The emitter assembly includes multiple circular sectors. Each circular sector is spaced apart from one another such that a sector gap is formed between radial sides of adjacent circular sectors. The base contact, which is formed over the base mesa, has a central portion and multiple radial members. Each radial member extends outward from the central portion of the base contact along a corresponding sector gap. As such, each of the circular sectors of the emitter assembly is separated by a radial member of the base contact. The number of circular sectors may vary from one embodiment to another. For example, the emitter assembly may have three, four, six, or more circular sectors.

    Abstract translation: 异质结双极晶体管包括基底台面，形成在基台面上的发射体组件和基底触点。 发射器组件包括多个圆形扇形。 每个圆形扇形体彼此间隔开，使得在相邻圆形扇形体的径向侧面之间形成扇形间隙。 形成在基台面上的基部接触件具有中心部分和多个径向部件。 每个径向构件沿着对应的扇形间隙从基座的中心部分向外延伸。 因此，发射器组件的每个圆形扇区由基部触点的径向构件分开。 圆形扇区的数量可以从一个实施例变化到另一个实施例。 例如，发射器组件可以具有三个，四个，六个或更多个圆形扇形。

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