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81.发明授权公开(公告)号：US12219771B2
公开(公告)日：2025-02-04
申请号：US17621334
申请日：2020-06-22
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Tatsuya Onuki , Takanori Matsuzaki , Shunpei Yamazaki
Abstract: A semiconductor device having a large storage capacity is provided. The semiconductor device includes an oxide provided over a substrate, a plurality of first conductors over the oxide, a first insulator that is provided over the plurality of first conductors and includes a plurality of openings overlapping with regions between the plurality of first conductors, a plurality of second insulators provided in the respective plurality of openings, a plurality of charge retention layers provided over the respective plurality of second insulators, a plurality of third insulators provided over the respective plurality of charge retention layers, and a plurality of second conductors provided over the respective plurality of third insulators.
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公开(公告)号：US12218247B2
公开(公告)日：2025-02-04
申请号：US17606830
申请日：2020-04-27
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Ryota Hodo , Tetsuya Kakehata , Shinya Sasagawa
IPC: H01L29/786 , H01L21/311 , H01L21/321 , H01L21/465 , H01L21/66 , H01L21/822 , H01L27/06 , H01L27/12 , H01L29/66 , H10B12/00 , H10B41/70
Abstract: A transistor with a high on-state current and a semiconductor device with high productivity are provided. Included are a first oxide, a second oxide, a third oxide, and a fourth oxide over a first insulator; a first conductor over the third oxide; a second conductor over the fourth oxide; a second insulator over the first conductor; a third insulator over the second conductor; a fifth oxide positioned over the second oxide and between the third oxide and the fourth oxide; a sixth oxide over the fifth oxide; a fourth insulator over the sixth oxide; a third conductor over the fourth insulator; and a fifth insulator over the first insulator to the third insulator. The fifth oxide includes a region in contact with the second oxide to the fourth oxide and the first insulator. The sixth oxide includes a region in contact with the fifth oxide, the first conductor, and the second conductor. The fourth insulator includes a region in contact with at least the sixth oxide, the third conductor, and the fifth insulator.
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公开(公告)号：US20250040250A1
公开(公告)日：2025-01-30
申请号：US18790447
申请日：2024-07-31
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Junichi KOEZUKA , Masami JINTYOU , Yukinori SHIMA , Daisuke KUROSAKI , Masataka NAKADA , Shunpei YAMAZAKI
IPC: H01L27/12 , H01L29/786
Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.
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公开(公告)号：US12211569B2
公开(公告)日：2025-01-28
申请号：US18512287
申请日：2023-11-17
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Atsushi Umezaki
IPC: G11C19/18 , G09G3/3266 , G09G3/36 , H01L27/12 , H01L29/786
Abstract: A semiconductor device or the like with a novel structure that can change the orientation of the display is provided. A semiconductor device or the like with a novel structure, in which a degradation in transistor characteristics can be suppressed, is provided. A semiconductor device or the like with a novel structure, in which operation speed can be increased, is provided. A semiconductor device or the like with a novel structure, in which a dielectric breakdown of a transistor can be suppressed, is provided. The semiconductor device or the like has a circuit configuration capable of switching between a first operation and a second operation by changing the potentials of wirings. By switching between these two operations, the scan direction is easily changed. The semiconductor device is configured to change the scan direction.
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公开(公告)号：US12210257B2
公开(公告)日：2025-01-28
申请号：US18415901
申请日：2024-01-18
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Yasuharu Hosaka , Yukinori Shima , Kenichi Okazaki , Shunpei Yamazaki
IPC: G02F1/1368 , G02F1/1333 , G02F1/1335 , G02F1/1337 , G02F1/1345 , G02F1/1362 , H01L27/12
Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.
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Patent Agency Ranking
公开(公告)号：US20250031449A1
公开(公告)日：2025-01-23
申请号：US18374877
申请日：2023-09-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Atsushi Umezaki
IPC: H01L27/12 , G02F1/133 , G09G3/20 , G09G3/3266 , G09G3/36 , G11C19/28 , H01L29/10 , H01L29/786 , H03K19/003
Abstract: To provide a novel shift register. Transistors 101 to 104 are provided. A first terminal of the transistor 101 is connected to a wiring 111 and a second terminal of the transistor 101 is connected to a wiring 112. A first terminal of the transistor 102 is connected to a wiring 113 and a second terminal of the transistor 102 is connected to the wiring 112. A first terminal of the transistor 103 is connected to the wiring 113 and a gate of the transistor 103 is connected to the wiring 111 or a wiring 119. A first terminal of the transistor 104 is connected to a second terminal of the transistor 103, a second terminal of the transistor 104 is connected to a gate of the transistor 101, and a gate of the transistor 104 is connected to a gate of the transistor 102.
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公开(公告)号：US20250031422A1
公开(公告)日：2025-01-23
申请号：US18785690
申请日：2024-07-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Daisuke YAMAGUCHI , Shinobu KAWAGUCHI , Yoshihiro KOMATSU , Toshikazu OHNO , Yasumasa YAMANE , Tomosato KANAGAWA
Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.
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公开(公告)号：US20250028379A1
公开(公告)日：2025-01-23
申请号：US18716284
申请日：2022-12-08
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yoshiyuki KUROKAWA , Masashi FUJITA , Kazuaki OHSHIMA
IPC: G06F1/3287 , G11C11/4074 , G11C11/4096 , H01L29/786
Abstract: A novel semiconductor is provided. The semiconductor includes a first component, a second component, and an instruction portion. The first component includes a first memory circuit having a function of storing first setting information in a state where power is supplied, and a second memory circuit having a function of storing the first setting information in a state where power is not supplied. The second component includes a third memory circuit having a function of storing second setting information in a state where power is supplied, and a fourth memory circuit having a function of storing the second setting information in a state where power is not supplied. The instruction portion has a function of controlling whether power is supplied to each of the first component and the second component. Each of the second memory circuit and the fourth memory circuit includes a transistor including a metal oxide in a semiconductor layer where a channel is formed.
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公开(公告)号：US12207462B2
公开(公告)日：2025-01-21
申请号：US17776342
申请日：2020-11-24
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kazuki Tsuda , Hiromichi Godo , Satoru Ohshita , Hitoshi Kunitake
Abstract: A novel semiconductor device is provided. A structure body extending in a first direction, a first conductor extending in a second direction, and a second conductor extending in the second direction are provided. In a first intersection portion where the structure body and the first conductor intersect with each other, a first insulator, a first semiconductor, a second insulator, a second semiconductor, a third insulator, a fourth insulator, and a fifth insulator are provided concentrically around a third conductor. In a second intersection portion where the structure body and the second conductor intersect with each other, the first insulator, the first semiconductor, the second insulator, a fourth conductor, the second semiconductor, and the third insulator are provided concentrically around the third conductor.
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公开(公告)号：US12206023B2
公开(公告)日：2025-01-21
申请号：US18381668
申请日：2023-10-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masahiro Takahashi , Kengo Akimoto , Shunpei Yamazaki
IPC: H01L29/786 , C01G15/00 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L21/02 , H01L21/12 , H01L27/12 , H01L29/04 , H01L29/24 , H01L29/66 , H10K59/121
Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0
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