公开(公告)号：US20250149325A1

公开(公告)日：2025-05-08

申请号：US19014870

申请日：2025-01-09

Applicant: ASM IP Holding B.V.

Inventor： Shaoren Deng ,  Andrea Illiberi ,  Daniele Chiappe ,  Eva Tois ,  Giuseppe Alessio Verni ,  Michael Givens ,  Varun Sharma ,  Chiyu Zhu ,  Shinya Iwashita ,  Charles Dezelah ,  Viraj Madhiwala ,  Jan Willem Maes ,  Marko Tuominen ,  Anirudhan Chandrasekaran

IPC: H01L21/02 ,  B08B3/08 ,  B08B5/00 ,  C11D7/02 ,  C11D7/24 ,  C11D7/26 ,  C23C16/02 ,  H01L21/285

Abstract: Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

公开(公告)号：US20250069885A1

公开(公告)日：2025-02-27

申请号：US18946444

申请日：2024-11-13

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Delphine Longrie ,  Hidemi Suemori ,  Jan Willem Maes ,  Marko Tuominen ,  Shaoren Deng ,  Ivo Johannes Raaijmakers ,  Andrea Illiberi

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/32 ,  H01L21/321 ,  H01L21/56 ,  H01L21/67 ,  H01L21/768 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

公开(公告)号：US12170197B2

公开(公告)日：2024-12-17

申请号：US17388773

申请日：2021-07-29

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Delphine Longrie ,  Hidemi Suemori ,  Jan Willem Maes ,  Marko Tuominen ,  Shaoren Deng ,  Ivo Johannes Raaijmakers ,  Andrea Illiberi

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/32 ,  H01L21/321 ,  H01L21/56 ,  H01L21/67 ,  H01L21/768 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

公开(公告)号：US20240218501A1

公开(公告)日：2024-07-04

申请号：US18396835

申请日：2023-12-27

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Sukanya Datta ,  Jan Willem Maes

IPC: C23C16/08 ,  C23C16/04

CPC classification number: C23C16/08 ,  C23C16/04

Abstract: The disclosure relates to methods of selectively depositing material comprising molybdenum on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The methods comprise providing a substrate in a reaction chamber, and performing at least one super-cycle comprising a halide sub-cycle and an oxyhalide sub-cycle. The halide sub-cycle comprises providing molybdenum halide precursor into the reaction chamber in a vapor phase, and the oxyhalide sub-cycle comprises providing molybdenum oxyhalide precursor into the reaction chamber in a vapor phase and providing a reactant into the reaction chamber to deposit material comprising molybdenum on the first surface of the substrate. The disclosure further relates to molybdenum layer, to a semiconductor structure and a device, and to vapor deposition assemblies for selectively depositing material comprising molybdenum on a substrate.

公开(公告)号：US20240209504A1

公开(公告)日：2024-06-27

申请号：US18390061

申请日：2023-12-20

Applicant: ASM IP Holding B.V.

Inventor： Janne-Petteri Niemelä ,  Elina Färm ,  Charles Dezelah ,  Jan Willem Maes ,  Patricio Romero

IPC: C23C16/455 ,  C23C16/14

CPC classification number: C23C16/45553 ,  C23C16/14

Abstract: The current disclosure relates to methods for forming a film comprising transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and a device comprising a layer that comprises a transition metal. In the method, transition metal is deposited on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reactor chamber and executing a cyclical deposition process. The cyclical deposition process comprises the steps of providing a transition metal precursor in vapor phase into the reaction chamber and providing a halogen precursor in vapor phase into the reaction chamber to form a film comprising elemental transition metal on a substrate. The halogen precursor comprises only one halogen atom. The disclosure further relates to a deposition assembly for depositing a material comprising transition metal on a substrate.

公开(公告)号：US11956977B2

公开(公告)日：2024-04-09

申请号：US17462181

申请日：2021-08-31

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Jan Willem Maes

IPC: H10B69/00 ,  H01L21/02 ,  H01L49/02 ,  H10B41/27 ,  H10B43/27 ,  H10B41/35 ,  H10B43/35

CPC classification number: H10B69/00 ,  H01L21/02538 ,  H01L21/0262 ,  H01L21/02658 ,  H01L28/00 ,  H10B43/27 ,  H10B41/27 ,  H10B41/35 ,  H10B43/35

Abstract: A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

公开(公告)号：US20220102140A1

公开(公告)日：2022-03-31

申请号：US17545047

申请日：2021-12-08

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Jan Willem Maes

IPC: H01L21/02 ,  H01L21/3213 ,  C23C16/455 ,  C23C16/40 ,  C23C16/56 ,  H01L21/033

Abstract: A method for forming ultraviolet (UV) radiation responsive metal-oxide containing film is disclosed. The method may include, depositing an UV radiation responsive metal oxide-containing film over a substrate by, heating the substrate to a deposition temperature of less than 400° C., contacting the substrate with a first vapor phase reactant comprising a metal component, a hydrogen component, and a carbon component, and contacting the substrate with a second vapor phase reactant comprising an oxygen containing precursor, wherein regions of the UV radiation responsive metal oxide-containing film have a first etch rate after UV irradiation and regions of the UV radiation responsive metal oxide-containing film not irradiated with UV radiation have a second etch rate, wherein the second etch rate is different from the first etch rate.

公开(公告)号：US20210175092A1

公开(公告)日：2021-06-10

申请号：US17130902

申请日：2020-12-22

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  C23C16/56 ,  H01L21/033 ,  H01L21/02 ,  C23C16/455 ,  H01L21/32 ,  H01L21/3213 ,  C23C16/04 ,  H01L21/768

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US20200343089A1

公开(公告)日：2020-10-29

申请号：US16787672

申请日：2020-02-11

Applicant: ASM IP Holding B.V.

Inventor： Han Wang ,  Qi Xie ,  Delphine Longrie ,  Jan Willem Maes ,  David de Roest ,  Julian Hsieh ,  Chiyu Zhu ,  Timo Asikainen

IPC: H01L21/02 ,  H01L21/283 ,  H01L21/311

Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

公开(公告)号：US20200291511A1

公开(公告)日：2020-09-17

申请号：US16676017

申请日：2019-11-06

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC: C23C16/02 ,  C23C16/06 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/768 ,  H01L21/285

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.