公开(公告)号：US20230377879A1

公开(公告)日：2023-11-23

申请号：US17747978

申请日：2022-05-18

申请人： Applied Materials, Inc.

发明人： Srinivas Gandikota ,  Elizabeth Mao ,  Tianyi Huang ,  Tengzhou Ma ,  Chi-Chou Lin ,  Yixiong Yang

IPC分类号： H01L21/02

CPC分类号： H01L21/02362 ,  H01L21/02153 ,  H01L21/02181

摘要： Embodiments of the present disclosure are related to methods of preventing aluminum diffusion in a metal gate stack (e.g., high-κ metal gate (HKMG) stacks and nMOS FET metal gate stacks). Some embodiments relate to a barrier layer for preventing aluminum diffusion into high-κ metal oxide layers. The barrier layer described herein is configured to reduce threshold voltage (Vt) shift and reduce leakage in the metal gate stacks. Additional embodiments relate to methods of forming a metal gate stack having the barrier layer described herein. The barrier layer may include one or more of amorphous silicon (a-Si), titanium silicon nitride (TiSiN), tantalum nitride (TaN), or titanium tantalum nitride (TiTaN).

公开(公告)号：US20230295804A1

公开(公告)日：2023-09-21

申请号：US18142236

申请日：2023-05-02

申请人： Applied Materials, Inc.

发明人： Srinivas Gandikota ,  Geetika Bajaj ,  Yixiong Yang ,  Seshadri Ganguli ,  Tuerxun Ailihumaer ,  Yogesh Sharma ,  Tianyi Huang

IPC分类号： C23C16/455 ,  C08G77/26 ,  C08G77/50 ,  C23C16/34 ,  C23C16/46 ,  C23C16/32 ,  H01L21/28

CPC分类号： C23C16/45553 ,  C08G77/26 ,  C08G77/50 ,  C23C16/34 ,  C23C16/466 ,  C23C16/45502 ,  C23C16/32 ,  H01L21/28088

摘要： Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III):




wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C).

公开(公告)号：US11715667B2

公开(公告)日：2023-08-01

申请号：US17720836

申请日：2022-04-14

申请人： Applied Materials, Inc.

发明人： Anqing Cui ,  Dien-Yeh Wu ,  Wei V. Tang ,  Yixiong Yang ,  Bo Wang

IPC分类号： C23C16/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/687 ,  H01L21/768 ,  H01L21/48 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532

CPC分类号： H01L21/76826 ,  C23C16/02 ,  C23C16/4584 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/28568 ,  H01L21/4871 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76877 ,  H01L23/53266

摘要： Process chamber lid assemblies and process chambers comprising same are described. The lid assembly has a housing with a gas dispersion channel in fluid communication with a lid plate. A contoured bottom surface of the lid plate defines a gap to a top surface of a gas distribution plate. A pumping channel is formed between an upper outer peripheral contour of the gas distribution plate and the lid plate.

公开(公告)号：US20230097400A1

公开(公告)日：2023-03-30

申请号：US18076958

申请日：2022-12-07

申请人： Applied Materials, Inc.

发明人： Srinivas Gandikota ,  Steven C.H. Hung ,  Mandyam Sriram ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Yong Yang

IPC分类号： H01L29/49 ,  H01L29/51 ,  H01L29/40 ,  H01L21/28 ,  H01L21/285

摘要： Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 Å to less than or equal to 50 Å. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfO2 as a high-κ metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.

公开(公告)号：US20230025937A1

公开(公告)日：2023-01-26

申请号：US17955996

申请日：2022-09-29

申请人： Applied Materials, Inc.

发明人： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC分类号： H01L21/285 ,  C23C16/455 ,  C23C16/18 ,  H01L23/532 ,  C23C16/04

摘要： Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US20230005945A1

公开(公告)日：2023-01-05

申请号：US17941421

申请日：2022-09-09

申请人： Applied Materials, Inc.

发明人： Jacqueline S. Wrench ,  Yixiong Yang ,  Yong Wu ,  Wei V. Tang ,  Srinivas Gandikota ,  Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen

IPC分类号： H01L27/11556 ,  H01L21/285 ,  H01L21/67 ,  H01L21/28 ,  C23C16/06 ,  H01L21/311 ,  C23C16/50 ,  C23C16/455 ,  H01L29/423

摘要： Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an α-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).

公开(公告)号：US20220384469A1

公开(公告)日：2022-12-01

申请号：US17329484

申请日：2021-05-25

申请人： Applied Materials, Inc.

发明人： Yong Yang ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Pradeep K. Subrahmanyan ,  Srinivas Gandikota

IPC分类号： H01L27/11556 ,  H01L27/11582 ,  G11C5/06 ,  H01L21/8234

摘要： A memory device comprises: a stack of alternating silicon oxide layers and wordline layers; each of the wordline layers comprising dipole regions adjacent to the silicon oxide layers, the dipole regions comprising a nitride, a carbide, an oxide, a carbonitride, or combinations thereof of a dipole metal. The dipole regions are formed by driving a dipole film into a gate oxide layer of the wordline layers, and any residual dipole film is removed.

公开(公告)号：US11488830B2

公开(公告)日：2022-11-01

申请号：US16549756

申请日：2019-08-23

申请人： Applied Materials, Inc.

发明人： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC分类号： H01L21/285 ,  C23C16/455 ,  C23C16/18 ,  H01L23/532 ,  C23C16/04

摘要： Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US20220254900A1

公开(公告)日：2022-08-11

申请号：US17667036

申请日：2022-02-08

申请人： Applied Materials, Inc.

发明人： Yong Yang ,  Srinivas Gandikota ,  Steven C.H. Hung ,  Mandyam Sriram ,  Jacqueline S. Wrench ,  Yixiong Yang

IPC分类号： H01L29/51 ,  H01L29/78 ,  H01L29/40 ,  H01L29/66

摘要： A metal gate stack on a substrate comprises: an interfacial layer on the substrate; a high-κ metal oxide layer on the interfacial layer, the high-κ metal oxide layer comprising a dipole region adjacent to the interfacial layer, the dipole region comprising niobium (Nb); a high-κ metal oxide capping layer on the high-κ metal oxide layer; a positive metal-oxide-semiconductor (PMOS) work function material above the high-κ metal oxide capping layer; and a gate electrode above the PMOS work function material. The dipole region is formed by driving Nb species of a Nb-based film into the high-κ metal oxide layer to form a dipole region.

公开(公告)号：US20220254640A1

公开(公告)日：2022-08-11

申请号：US17347786

申请日：2021-06-15

申请人： Applied Materials, Inc.

发明人： Yong Yang ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Jianqiu Guo ,  Seshadri Ganguli ,  Steven C.H. Hung ,  Srinivas Gandikota

IPC分类号： H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/49

摘要： A sacrificial sealing layer is formed on a high-K metal gate (HKMG) stack to suppress oxidants, e.g., oxygen and water, from impacting the metal gate stack, thus preserving the device EOT. The method integrated processes that include forming an interfacial layer on the substrate; forming a high-K metal oxide layer on the interfacial layer, the high-K metal oxide layer comprising a dipole region adjacent to the interfacial layer, the dipole region; depositing a capping layer on the high-K metal oxide layer; and forming a sacrificial sealing layer on the capping layer. The dipole region is formed by driving a dopant species, e.g., zinc (Zn), vanadium (V), tungsten (W), molybdenum (Mo), ruthenium (Ru), titanium (Ti), tantalum (Ta), zirconium (Zr), aluminum (Al), niobium (Nb), or mixtures thereof, of a dipole film into the high-K metal oxide layer to form a dipole region.