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    Controlled air gap formation
    81.
    发明授权
    Controlled air gap formation 有权
    控制气隙形成

    公开(公告)号：US08921235B2

    公开(公告)日：2014-12-30

    申请号：US13834508

    申请日：2013-03-15

    Applicant: Applied Materials Inc.

    Inventor： Kiran V. Thadani ,  Jingjing Xu ,  Abhijit Basu Mallick ,  Joe Griffith Cruz ,  Nitin K. Ingle ,  Pravin K. Narwankar

    IPC: H01L21/00 ,  H01L21/20

    CPC classification number: H01L21/2015 ,  C23C16/045 ,  C23C16/26 ,  C23C16/30 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76837 ,  H01L2221/1047

    Abstract: A method of forming and controlling air gaps between adjacent raised features on a substrate includes forming a silicon-containing film in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming carbon-containing material on top of the silicon-containing film and forming a second film over the carbon-containing material using a flowable deposition process. The second film fills an upper region between the adjacent raised features. The method also includes curing the materials at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. The thickness and number layers of films can be used to control the thickness, vertical position and number of air gaps.

    Abstract translation: 在衬底上形成和控制相邻凸起特征之间的空气间隙的方法包括：使用可流动沉积工艺在邻近凸起特征之间的底部区域中形成含硅膜。 该方法还包括在含硅膜的顶部上形成含碳材料，并使用可流动的沉积工艺在含碳材料上形成第二膜。 第二膜填充相邻凸起特征之间的上部区域。 该方法还包括在升高的温度下固化材料一段时间以形成相邻凸起特征之间的气隙。 膜的厚度和数量层可用于控制厚度，垂直位置和气隙数量。

    Selective titanium nitride etching
    82.
    发明授权
    Selective titanium nitride etching 有权
    选择性氮化钛蚀刻

    公开(公告)号：US08921234B2

    公开(公告)日：2014-12-30

    申请号：US13791125

    申请日：2013-03-08

    Applicant: Applied Materials, Inc.

    Inventor： Jie Liu ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Seung Park ,  Zhijun Chen ,  Ching-Mei Hsu

    IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3213

    CPC classification number: H01L21/32136 ,  H01J37/32357

    Abstract: Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.

    Abstract translation: 描述了相对于图案化异质结构上的其它材料蚀刻暴露的氮化钛的方法，并且可以包括由含氟前体形成的远程等离子体蚀刻。 包括来自远程等离子体的等离子体流出物的前体组合流入基板处理区域以在各种操作条件下以高氮化钛选择性蚀刻图案化结构。 该方法可用于以比各种金属，氮化物和氧化物化合物更快的速率除去氮化钛。

    Flowable films using alternative silicon precursors
    83.
    发明授权
    Flowable films using alternative silicon precursors 有权
    使用替代硅前体的可流动膜

    公开(公告)号：US08871656B2

    公开(公告)日：2014-10-28

    申请号：US13765328

    申请日：2013-02-12

    Applicant: Applied Materials, Inc.

    Inventor： Abhijit Basu Mallick ,  Nitin K. Ingle

    IPC: H01L21/02 ,  H01L21/762

    CPC classification number: H01L21/0217 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02293 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/76224

    Abstract: Methods of depositing initially flowable dielectric films on substrates are described. The methods include introducing silicon-containing precursor to a deposition chamber that contains the substrate. The methods further include generating at least one excited precursor, such as radical nitrogen or oxygen precursor, with a remote plasma system located outside the deposition chamber. The excited precursor is also introduced to the deposition chamber, where it reacts with the silicon-containing precursor in a reaction zone deposits the initially flowable film on the substrate. The flowable film may be treated in, for example, a steam environment to form a silicon oxide film.

    Abstract translation: 描述了在基底上沉积初始可流动介电膜的方法。 所述方法包括将含硅前体引入到包含基底的沉积室中。 所述方法还包括使用位于沉积室外部的远程等离子体系统产生至少一种被激发的前体，例如自由基氮或氧前体。 激发的前体也被引入沉积室，在反应区中与沉淀室中的含硅前体反应，将初始可流动的膜沉积在基底上。 可流动膜可以在例如蒸汽环境中处理以形成氧化硅膜。

    CHEMICAL LINKERS TO IMPART IMPROVED MECHANICAL STRENGTH TO FLOWABLE FILMS
    84.
    发明申请
    CHEMICAL LINKERS TO IMPART IMPROVED MECHANICAL STRENGTH TO FLOWABLE FILMS 审中-公开
    化学连接剂将改进的机械强度提升到流动膜

    公开(公告)号：US20140302690A1

    公开(公告)日：2014-10-09

    申请号：US14019861

    申请日：2013-09-06

    Applicant: Applied Materials, Inc.

    Inventor： Brian S. Underwood ,  Abhijit B. Mallick ,  Nitin K. Ingle

    IPC: H01L21/02

    CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348

    Abstract: Methods forming a low-κ dielectric material on a substrate are described. The methods may include the steps of producing a radical precursor by flowing an unexcited precursor into a remote plasma region, and reacting the radical precursor with a gas-phase silicon precursor to deposit a flowable film on the substrate. The gas-phase silicon precursor may include at least one silicon-and-oxygen containing compound and at least one silicon-and-carbon linker. The flowable film may be cured to form the low-κ dielectric material.

    Abstract translation: 形成低kgr的方法 介绍基板上的介电材料。 该方法可以包括以下步骤：通过将未激发的前体流入远离等离子体区域，并使自由基前体与气相硅前驱物反应以在基底上沉积可流动的膜而产生自由基前体。 气相硅前体可以包括至少一种含硅和氧的化合物和至少一种硅 - 碳连接体。 可流动膜可以固化以形成低温 介电材料。

    DRY ETCH PROCESS
    85.
    发明申请
    DRY ETCH PROCESS 有权
    干蚀工艺

    公开(公告)号：US20140134842A1

    公开(公告)日：2014-05-15

    申请号：US13832802

    申请日：2013-03-15

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Jingchun Zhang ,  Nitin K. Ingle ,  Anchuan Wang

    IPC: H01L21/311

    CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J2237/3347 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/32137

    Abstract: A method for conformal dry etch of a liner material in a high aspect ratio trench is achieved by depositing or forming an inhomogeneous passivation layer which is thicker near the opening of a trench bat thinner deep within the trench. The methods described herein use a selective etch following formation of the inhomogeneous passivation layer. The selective etch etches liner material faster than the passivation material. The inhomogeneous passivation layer suppresses the etch rate of the selective etch near the top of the trench (where it would otherwise be fastest) and gives the etch a head start deeper in the trench (where it would otherwise be slowest). This method may also find utility in removing bulk material uniformly from within a trench.

    Abstract translation: 通过沉积或形成非常均匀的钝化层来实现在高纵横比沟槽中衬垫材料的保形干蚀刻的方法，所述不均匀钝化层在沟槽内深沟槽槽的开口处更厚。 本文描述的方法在形成不均匀钝化层之后使用选择性蚀刻。 选择性蚀刻蚀刻衬垫材料比钝化材料更快。 非均匀钝化层抑制在沟槽顶部附近的选择性蚀刻的蚀刻速率（否则其将是最快的），并且使蚀刻在沟槽中开始更深（否则其将是最慢的）。 该方法也可用于从沟槽内均匀地去除大量材料。

    RADICAL CHEMISTRY MODULATION AND CONTROL USING MULTIPLE FLOW PATHWAYS
    86.
    发明申请
    RADICAL CHEMISTRY MODULATION AND CONTROL USING MULTIPLE FLOW PATHWAYS 审中-公开
    使用多流程路径进行放射化学调节和控制

    公开(公告)号：US20140099794A1

    公开(公告)日：2014-04-10

    申请号：US13799490

    申请日：2013-03-13

    Applicant: Applied Materials, Inc.

    Inventor： Nitin K. Ingle ,  Anchuan Wang ,  Xinglong Chen

    IPC: H01L21/67 ,  H01L21/3065

    CPC classification number: H01L21/67069 ,  H01J37/32357 ,  H01J37/32899 ,  H01L21/3065

    Abstract: Systems and methods are described relating to semiconductor processing chambers. An exemplary chamber may include a first remote plasma system fluidly coupled with a first access of the chamber, and a second remote plasma system fluidly coupled with a second access of the chamber. The system may also include a gas distribution assembly in the chamber that may be configured to deliver both the first and second precursors into a processing region of the chamber, while maintaining the first and second precursors fluidly isolated from one another until they are delivered into the processing region of the chamber.

    Abstract translation: 描述了与半导体处理室有关的系统和方法。 示例性室可以包括与腔室的第一通路流体耦合的第一远程等离子体系统和与腔室的第二通路流体耦合的第二远程等离子体系统。 该系统还可以包括腔室中的气体分配组件，其可以被配置为将第一和第二前体两者传送到腔室的处理区域中，同时保持第一和第二前体彼此流体隔离，直到它们被输送到 处理区域。

    Dry-etch for silicon-and-nitrogen-containing films
    87.
    发明授权
    Dry-etch for silicon-and-nitrogen-containing films 有权
    含硅和氮的膜的干蚀刻

    公开(公告)号：US08642481B2

    公开(公告)日：2014-02-04

    申请号：US13745251

    申请日：2013-01-18

    Applicant: Applied Materials, Inc.

    Inventor： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    IPC: H01L21/302

    CPC classification number: H01L21/3065 ,  H01L21/31116

    Abstract: A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.

    Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的含硅和氮的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与含硅和氮的材料的暴露区域反应。 等离子体流出物与图案化的异质结构反应，从暴露的含硅和氮的材料区域中选择性地除去含硅和氮的材料，同时非常缓慢地除去其它暴露的材料。 含氮和氮的材料的选择性部分取决于位于远程等离子体和衬底处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。 该方法可用于以超过二氧化硅速率的二十倍来选择性地除去含硅和氮的材料。

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