公开(公告)号：US06852593B2

公开(公告)日：2005-02-08

申请号：US10614489

申请日：2003-07-03

申请人： Cem Basceri ,  Gurtej Sandhu

发明人： Cem Basceri ,  Gurtej Sandhu

IPC分类号： C23C16/40 ,  C30B25/02 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242

CPC分类号： H01L21/31691 ,  C23C16/409 ,  C30B25/02 ,  C30B29/32 ,  H01L28/55

摘要： Described herein is a method for producing a haze-free (Ba, Sr)TiO3 (BST) film, and devices incorporating the same. In one embodiment, the BST film is made haze-free by depositing the film with a substantially uniform desired crystal orientation, for example, (100), preferably by forming the film by metal-organic chemical vapor deposition at a temperature greater than about 580° C. at a rate of less than about 80 Å/min, to result in a film having about 50 to 53.5 atomic percent titanium. In another embodiment, where the BST film serves as a capacitor for a DRAM memory cell, a desired {100} orientation is induced by depositing the bottom electrode over a nucleation layer of NiO, which gives the bottom electrode a preferential {100} orientation. BST is then grown over the {100} oriented bottom electrode also with a {100} orientation. A nucleation layer of materials such as Ti, Nb and Mn can also be provided over the bottom electrode and beneath the BST film to induce smooth, haze-free BST growth. Haze-free BST film can also be favored by forming the bottom electrode at high temperatures close to those used for BST deposition, and without a vacuum break between the bottom electrode and BST deposition.

摘要翻译： 本文描述了一种生产无雾（Ba，Sr）TiO 3（BST）膜的方法，以及包含它的装置。 在一个实施方案中，BST膜通过以基本上均匀的所需晶体取向沉积薄膜而形成为无雾状，例如（100），优选通过金属 - 有机化学气相沉积在大于约580℃的温度下形成薄膜 ℃，以小于约/分钟的速率，得到具有约50至53.5原子百分数的钛的膜。 在另一个实施例中，其中BST膜用作DRAM存储单元的电容器，通过将底部电极沉积在NiO的成核层上来诱导所需的{100}取向，这使得底部电极具有优先{100}取向。 然后，BST也以{100}取向生长在{100}取向的底部电极上。 还可以在底部电极和BST膜下方提供诸如Ti，Nb和Mn的材料的成核层，以引起平滑无雾的BST生长。 通过在接近用于BST沉积的高温下形成底部电极，并且在底部电极和BST沉积之间没有真空断裂，也可以使无色BST膜更有利。

公开(公告)号：US06682969B1

公开(公告)日：2004-01-27

申请号：US09652863

申请日：2000-08-31

申请人： Cem Basceri ,  Howard E. Rhodes ,  Gurtej Sandhu ,  F. Daniel Gealy ,  Thomas M. Graettinger

发明人： Cem Basceri ,  Howard E. Rhodes ,  Gurtej Sandhu ,  F. Daniel Gealy ,  Thomas M. Graettinger

IPC分类号： H01L2100

CPC分类号： H01L28/65 ,  H01L21/31637 ,  H01L21/31691 ,  H01L23/5222 ,  H01L27/10852 ,  H01L28/56 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.

摘要翻译： 一种改进的电荷存储装置及其提供方法，电荷存储装置包括导体 - 绝缘体导体（CIC）三明治。 CIC夹层包括沉积在半导体集成电路上的第一导电层。 CIC夹层还包括以齐平方式沉积在第一导电层上的第一绝缘层。 第一绝缘层包括具有多个氧化物和部分填充氧化物的多个氧原子的结构，其中未填充的氧气定义氧空位的浓度。 CIC夹层还包括在强氧化环境中沉积在第一绝缘层上的第二导电层，以便降低第一绝缘层中氧空位的浓度，从而在第一绝缘层之间提供富氧界面层 和第二导电层，以便在第二导电层内捕获多个氧原子。 富氧界面层和第二导电层用作氧空位吸收器，用于吸收源于第一绝缘层的迁移氧空位，从而降低第一绝缘层中氧空位的浓度，从而减少氧空位的累积 接口层。 因此，第一绝缘层提供增加的介电常数和增加的电流流过其中，从而增加CIC夹层的电容，并且减少流过CIC夹层的漏电流。

公开(公告)号：US06660535B2

公开(公告)日：2003-12-09

申请号：US09971945

申请日：2001-10-04

申请人： Cem Basceri ,  Gurtej Sandhu

发明人： Cem Basceri ,  Gurtej Sandhu

IPC分类号： H01L2100

CPC分类号： H01L21/31691 ,  C23C16/409 ,  C30B25/02 ,  C30B29/32 ,  H01L28/55

摘要： Described herein is a method for producing a haze-free (Ba, Sr)TiO3 (BST) film, and devices incorporating the same. In one embodiment, the BST film is made haze-free by depositing the film with a substantially uniform desired crystal orientation, for example, (100), preferably by forming the film by metal-organic chemical vapor deposition at a temperature greater than about 580° C. at a rate of less than about 80 Å/min, to result in a film having about 50 to 53.5 atomic percent titanium. In another embodiment, where the BST film serves as a capacitor for a DRAM memory cell, a desired {100} orientation is induced by depositing the bottom electrode over a nucleation layer of NiO, which gives the bottom electrode a preferential {100} orientation. BST is then grown over the {100} oriented bottom electrode also with a {100} orientation. A nucleation layer of materials such as Ti, Nb and Mn can also be provided over the bottom electrode and beneath the BST film to induce smooth, haze-free BST growth. Haze-free BST film can also be favored by forming the bottom electrode at high temperatures close to those used for BST deposition, and without a vacuum break between the bottom electrode and BST deposition.

公开(公告)号：US20060264010A1

公开(公告)日：2006-11-23

申请号：US11497689

申请日：2006-07-31

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Chris Carlson ,  F. Gealy

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Chris Carlson ,  F. Gealy

IPC分类号： H01L21/20

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02658

摘要： The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing sidewalls of the opening are lined with a second material, with monocrystalline material being exposed at a base of the second material-lined opening. A silicon-comprising layer is epitaxially grown from the exposed monocrystalline material within the second material-lined opening. At least a portion of the second material lining is in situ removed. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成包含外延硅的层的方法。 在一个实施方案中，在通过单晶材料接收的第一材料内形成开口。 开口的相对侧壁衬有第二材料，其中单晶材料暴露在第二材料衬里开口的基部处。 在第二材料衬里的开口内从暴露的单晶材料外延生长含硅层。 第二材料衬里的至少一部分被原位去除。 考虑了其他方面和实现。

公开(公告)号：US20060046440A1

公开(公告)日：2006-03-02

申请号：US10932151

申请日：2004-09-01

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Chris Carlson ,  F. Gealy

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Chris Carlson ,  F. Gealy

IPC分类号： H01L21/20

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02658

摘要： The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing sidewalls of the opening are lined with a second material, with monocrystalline material being exposed at a base of the second material-lined opening. A silicon-comprising layer is epitaxially grown from the exposed monocrystalline material within the second material-lined opening. At least a portion of the second material lining is in situ removed. Other aspects and implementations are contemplated.

公开(公告)号：US20070166962A1

公开(公告)日：2007-07-19

申请号：US11712151

申请日：2007-02-28

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Chris Carlson ,  F. Gealy

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Chris Carlson ,  F. Gealy

IPC分类号： H01L21/20

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02658

摘要： The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing sidewalls of the opening are lined with a second material, with monocrystalline material being exposed at a base of the second material-lined opening. A silicon-comprising layer is epitaxially grown from the exposed monocrystalline material within the second material-lined opening. At least a portion of the second material lining is in situ removed. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成包含外延硅的层的方法。 在一个实施方案中，在通过单晶材料接收的第一材料内形成开口。 开口的相对侧壁衬有第二材料，其中单晶材料暴露在第二材料衬里开口的基部处。 在第二材料衬里的开口内从暴露的单晶材料外延生长含硅层。 第二材料衬里的至少一部分被原位去除。 考虑了其他方面和实现。

公开(公告)号：US10515801B2

公开(公告)日：2019-12-24

申请号：US12908206

申请日：2010-10-20

申请人： Gurtej Sandhu

发明人： Gurtej Sandhu

IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

摘要： Self-assembling materials, such as block copolymers, are used as mandrels for pitch multiplication. The copolymers are deposited over a substrate and directed to self-assemble into a desired pattern. One of the blocks forming the block copolymers is selectively removed. The remaining blocks are used as mandrels for pitch multiplication. Spacer material is blanket deposited over the blocks. The spacer material is subjected to a spacer etch to form spacers on sidewalls of the mandrels. The mandrels are selectively removed to leave free-standing spacers. The spacers may be used as pitch-multiplied mask features to define a pattern in an underlying substrate.

公开(公告)号：US09196753B2

公开(公告)日：2015-11-24

申请号：US13089648

申请日：2011-04-19

申请人： D. V. Nirmal Ramaswamy ,  Gurtej Sandhu

发明人： D. V. Nirmal Ramaswamy ,  Gurtej Sandhu

IPC分类号： H01L27/108 ,  H01L29/872 ,  H01L27/28 ,  H01L45/00 ,  H01L27/102 ,  H01L29/885 ,  H01L27/22 ,  H01L27/24 ,  G11C11/56 ,  G11C13/00

CPC分类号： H01L29/872 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/71 ,  H01L27/1021 ,  H01L27/224 ,  H01L27/2409 ,  H01L27/285 ,  H01L29/885 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

摘要： Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.

摘要翻译： 为选择装置提供方法，装置和系统，所述选择装置可以包括形成在第一电极上的至少一个半导体材料的半导体叠层，其中半导体叠层可以具有约700埃（或更小）的厚度。 所述至少一个半导体材料中的每一个可以具有约4电子伏（eV）或更小的相关带隙，并且可以在半导体叠层上形成第二电极。

公开(公告)号：US08946907B2

公开(公告)日：2015-02-03

申请号：US13526225

申请日：2012-06-18

申请人： Gurtej Sandhu

发明人： Gurtej Sandhu

IPC分类号： H01L23/52 ,  H01L21/311 ,  H01L21/033

CPC分类号： H01L23/5226 ,  H01L21/0337 ,  H01L21/31144 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for creating structures in a semiconductor assembly is provided. The method includes etching apertures into a dielectric layer and applying a polymer layer over the dielectric layer. The polymer layer is applied uniformly and fills the apertures at different rates depending on the geometry of the apertures, or on the presence or absence of growth accelerating material. The polymer creates spacers for the etching of additional structure in between the spacers. The method is capable of achieving structures smaller than current lithography techniques.

摘要翻译： 提供了一种用于在半导体组件中产生结构的方法。 该方法包括将孔蚀刻到电介质层中，并在该介电层上施加聚合物层。 均匀地施加聚合物层，并根据孔的几何形状，或者存在或不存在生长促进材料，以不同的速率填充孔。 该聚合物产生用于蚀刻间隔物之间​​的附加结构的间隔物。 该方法能够实现比当前光刻技术更小的结构。

公开(公告)号：US08796661B2

公开(公告)日：2014-08-05

申请号：US12917348

申请日：2010-11-01

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu

IPC分类号： H01L47/00 ,  H01L21/06 ,  H01L21/20

CPC分类号： H01L45/085 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/1273 ,  H01L45/14 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1683

摘要： A method of forming a nonvolatile memory cell includes forming a first electrode having a first current conductive material and a circumferentially self-aligned second current conductive material projecting elevationally outward from the first current conductive material. The second current conductive material is different in composition from the first current conductive material. A programmable region is formed over the first current conductive material and over the projecting second current conductive material of the first electrode. A second electrode is formed over the programmable region. In one embodiment, the programmable region is ion conductive material, and at least one of the first and second electrodes has an electrochemically active surface directly against the ion conductive material. Other method and structural aspects are disclosed.

摘要翻译： 形成非易失性存储单元的方法包括形成具有第一电流导电材料的第一电极和从第一电流导电材料向外突出的周向自对准的第二导电材料。 第二电流导电材料的组成不同于第一电流导电材料。 可编程区域形成在第一电流导电材料之上并且在第一电极的突出的第二电流导电材料之上。 在可编程区域上形成第二电极。 在一个实施例中，可编程区域是离子传导材料，并且第一和第二电极中的至少一个电极具有直接抵靠离子导电材料的电化学活性表面。 公开了其它方法和结构方面。