Method of forming replacement metal gate with borderless contact and structure thereof
    83.
    发明授权
    Method of forming replacement metal gate with borderless contact and structure thereof 有权
    用无边界接触形成替换金属门的方法及其结构

    公开(公告)号:US08084311B1

    公开(公告)日:2011-12-27

    申请号:US12948246

    申请日:2010-11-17

    IPC分类号: H01L21/338 H01L21/336

    摘要: Embodiments of the present invention provide a method of forming borderless contact for transistor in a replacement metal gate process. The method includes forming a gate on top of a substrate and forming spacers adjacent to sidewalls of the gate; lowering height of the spacers to expose a top portion of the sidewalls of the gate; depositing an etch-stop layer covering the spacers and the upper portion of the sidewalls of the gate; making an opening at a level that is above the spacers and in the upper portion of the sidewalls to expose the gate; and replacing material of the gate from the opening with a new gate material thereby forming a replacement gate. The method further creates a via opening in an inter-level dielectric layer surrounding the gate and spacers, with the via opening exposing the etch-stop layer; removing the etch-stop layer and fill the via opening with a metal material to form borderless contact.

    摘要翻译: 本发明的实施例提供了在替换金属栅极工艺中形成晶体管的无边界接触的方法。 该方法包括在衬底的顶部上形成栅极并且形成与栅极的侧壁相邻的间隔物; 降低间隔件的高度以暴露门的侧壁的顶部; 沉积覆盖所述间隔物和所述栅极侧壁的上部的蚀刻停止层; 在间隔物上方和在侧壁的上部中的水平面处开口以暴露门; 并用新的栅极材料从开口替换栅极的材料,从而形成替换栅极。 该方法还在围绕栅极和间隔物的层间电介质层中形成通孔,通孔开口露出蚀刻停止层; 去除蚀刻停止层并用金属材料填充通孔开口以形成无边界接触。

    FORMATION OF AIR GAP WITH PROTECTION OF METAL LINES
    84.
    发明申请
    FORMATION OF AIR GAP WITH PROTECTION OF METAL LINES 失效
    形成有保护金属线的空气隙

    公开(公告)号:US20110193230A1

    公开(公告)日:2011-08-11

    申请号:US12700792

    申请日:2010-02-05

    IPC分类号: H01L23/532 H01L21/768

    摘要: A method is provided for fabricating a microelectronic element having an air gap in a dielectric layer thereof. A dielectric cap layer can be formed which has a first portion overlying surfaces of metal lines, the first portion extending a first height above a height of a surface of the dielectric layer and a second portion overlying the dielectric layer surface and extending a second height above the height of the surface of the dielectric layer, the second height being greater than the first height. After forming the cap layer, a mask can be formed over the cap layer. The mask can have a multiplicity of randomly disposed holes. Each hole may expose a surface of only the second portion of the cap layer which has the greater height. The mask may fully cover a surface of the first portion of the cap layer having the lower height. Subsequently, an etchant can be directed towards the first and second portions of the cap layer to form holes in the cap layer aligned with the holes in the mask. Material can be removed from the dielectric layer where exposed to the etchant by the holes in the cap layer. At such time, the mask can protect the first portion of the cap layer and the metal lines from being attacked by the etchant.

    摘要翻译: 提供了一种用于制造其电介质层中具有气隙的微电子元件的方法。 可以形成介电盖层,其具有覆盖金属线表面的第一部分,第一部分在电介质层的表面的高度之上延伸第一高度,以及覆盖介电层表面的第二部分,并且延伸第二高度 电介质层的表面的高度,第二高度大于第一高度。 在形成盖层之后,可以在盖层之上形成掩模。 掩模可以具有多个随机布置的孔。 每个孔可以暴露仅具有较大高度的盖层的第二部分的表面。 掩模可以完全覆盖具有较低高度的盖层的第一部分的表面。 随后,可以将蚀刻剂引导到盖层的第一和第二部分,以在盖层中形成与掩模中的孔对准的孔。 可以通过盖层中的孔从暴露于蚀刻剂的介电层去除材料。 此时,掩模可以保护盖层的第一部分和金属线不被蚀刻剂侵蚀。

    Phase change tip storage cell
    86.
    发明授权
    Phase change tip storage cell 有权
    相变尖端存储单元

    公开(公告)号:US07928420B2

    公开(公告)日:2011-04-19

    申请号:US10732580

    申请日:2003-12-10

    IPC分类号: H01L21/00 H01L21/06

    摘要: A storage cell, integrated circuit (IC) chip with one or more storage cells that may be in an array of the storage cells and a method of forming the storage cell and IC. Each storage cell includes a stylus, the tip of which is phase change material. The phase change tip may be sandwiched between an electrode and conductive material, e.g., titanium nitride (TiN), tantalum nitride (TaN) or n-type semiconductor. The phase change layer may be a chalcogenide and in particular a germanium (Ge), antimony (Sb), tellurium (Te) (GST) layer.

    摘要翻译: 具有一个或多个存储单元的存储单元,集成电路(IC)芯片,其可以是存储单元阵列,以及形成存储单元和IC的方法。 每个存储单元包括触针,其尖端是相变材料。 相变尖端可以夹在电极和导电材料之间,例如氮化钛(TiN),氮化钽(TaN)或n型半导体。 相变层可以是硫族化物,特别是锗(Ge),锑(Sb),碲(Te)(GST)层。

    Conductive liner at an interface between a shallow trench isolation structure and a buried oxide layer
    87.
    发明授权
    Conductive liner at an interface between a shallow trench isolation structure and a buried oxide layer 有权
    在浅沟槽隔离结构和掩埋氧化物层之间的界面处的导电衬垫

    公开(公告)号:US07855428B2

    公开(公告)日:2010-12-21

    申请号:US12115699

    申请日:2008-05-06

    IPC分类号: H01L21/76

    CPC分类号: H01L21/76283

    摘要: The invention relates to a design structure, and more particularly, to a design structure for a conductive liner for rad hard total dose immunity and a structure thereof. The structure includes at least one shallow trench isolation structure having oxide material and formed in an SOI. A dielectric liner is formed at an interface of the SOI within the at least one shallow trench isolation structure. A metal or metal alloy layer is formed in the at least one shallow trench isolation structure and between the dielectric liner and the oxide material.

    摘要翻译: 本发明涉及一种设计结构,更具体地,涉及一种用于辐射硬总剂量免疫的导电衬垫的设计结构及其结构。 该结构包括至少一个具有氧化物材料并在SOI中形成的浅沟槽隔离结构。 在所述至少一个浅沟槽隔离结构内的SOI的界面处形成电介质衬垫。 在所述至少一个浅沟槽隔离结构中以及所述电介质衬垫和所述氧化物材料之间形成金属或金属合金层。

    METHOD AND SYSTEM FOR CONTROLLING RADICAL DISTRIBUTION
    89.
    发明申请
    METHOD AND SYSTEM FOR CONTROLLING RADICAL DISTRIBUTION 有权
    用于控制辐射分布的方法和系统

    公开(公告)号:US20100193471A1

    公开(公告)日:2010-08-05

    申请号:US12754662

    申请日:2010-04-06

    IPC分类号: C23F1/00 C23C16/52

    摘要: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

    摘要翻译: 等离子体处理系统包括处理室,被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口,以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

    Method and system for controlling radical distribution
    90.
    发明授权
    Method and system for controlling radical distribution 有权
    控制激进分布的方法和系统

    公开(公告)号:US07718030B2

    公开(公告)日:2010-05-18

    申请号:US11233025

    申请日:2005-09-23

    摘要: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

    摘要翻译: 等离子体处理系统包括处理室,被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口,以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。