利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

237 条记录 (耗时 0.062 秒)

    Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
    82.
    发明授权
    Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks 有权
    存储元件和交叉点开关以及使用非易失性纳米管块的阵列

    公开(公告)号：US08809917B2

    公开(公告)日：2014-08-19

    申请号：US12511779

    申请日：2009-07-29

    申请人： Claude L. Bertin ,  X. M. Henry Huang ,  Thomas Rueckes ,  Ramesh Sivarajan

    发明人： Claude L. Bertin ,  X. M. Henry Huang ,  Thomas Rueckes ,  Ramesh Sivarajan

    IPC分类号： H01L29/84

    CPC分类号： G11C5/063 ,  B82Y10/00 ,  G11C13/0002 ,  G11C13/0021 ,  G11C13/025 ,  G11C17/16 ,  G11C17/165 ,  G11C2213/19 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/10 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/112 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L51/0048 ,  H01L51/0591 ,  Y10S977/943

    摘要： Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.

    摘要翻译： 在一个方面，覆盖的纳米管开关包括：（a）包括不对齐的多个纳米管的纳米管元件，所述纳米管元件具有顶表面，底表面和侧表面; （b）与纳米管元件接触的第一和第二端子，其中第一端子设置在并基本上覆盖纳米管元件的整个顶表面，并且其中第二端子接触纳米管的底表面的至少一部分 元件; 和（c）能够向第一和第二端子施加电刺激的控制电路。 纳米管元件可以响应于由控制电路施加到第一和第二端子的对应的多个电刺激而在多个电子状态之间切换。 对于每个不同的电子状态，纳米管元件提供在第一和第二端子之间具有不同电阻的电路径。

    Light emitters using nanotubes and methods of making same
    83.
    发明授权
    Light emitters using nanotubes and methods of making same 有权
    使用纳米管的发光体及其制作方法

    公开(公告)号：US08471238B2

    公开(公告)日：2013-06-25

    申请号：US11227468

    申请日：2005-09-15

    申请人： Jonathan W. Ward ,  Mitchell Meinhold ,  Claude L. Bertin ,  Benjamin Schlatka ,  Brent M. Segal ,  Thomas Ruckes

    发明人： Jonathan W. Ward ,  Mitchell Meinhold ,  Claude L. Bertin ,  Benjamin Schlatka ,  Brent M. Segal ,  Thomas Ruckes

    IPC分类号： H01L29/06

    CPC分类号： H01K1/04 ,  B82Y10/00 ,  B82Y20/00 ,  H01L51/0048 ,  H01L51/0052

    摘要： Light emitters using nanotubes and methods of making same. A light emitter includes a nanotube article in electrical communication with a first and a second contact, a substrate having a predefined region with a relatively low thermal conductivity said region in predefined physical relation to said nanotube article; and a stimulus circuit in electrical communication with the first and second contacts. The stimulus circuit provides electrical stimulation sufficient to induce light emission from the nanotube article in the proximity of the predefined region. The predefined region is a channel formed in the substrate or a region of material with relatively low thermal conductivity. The light emitter can be integrated with semiconductor circuits including CMOS circuits. The light emitter can be integrated into optical driver circuits (on- and off-chip drivers) and opto-isolators.

    摘要翻译： 使用纳米管的发光体及其制作方法。 光发射器包括与第一和第二接触电连通的纳米管制品，具有预定区域的基底，所述预定区域具有相对于所述纳米管制品预定的物理关系的相对低导热性的所述区域; 以及与第一和第二触点电连通的激励电路。 刺激电路提供足以在预定区域附近从纳米管制品引发光发射的电刺激。 预定区域是形成在衬底中的通道或具有相对较低热导率的材料区域。 光发射器可以与包括CMOS电路的半导体电路集成。 光发射器可以集成到光驱动器电路（片上和片外驱动器）和光隔离器中。

    CARBON NANOTUBE-BASED NEURAL NETWORKS AND METHODS OF MAKING AND USING SAME
    85.
    发明申请
    CARBON NANOTUBE-BASED NEURAL NETWORKS AND METHODS OF MAKING AND USING SAME 有权
    基于碳纳米管的神经网络及其制造和使用方法

    公开(公告)号：US20110176359A1

    公开(公告)日：2011-07-21

    申请号：US12934545

    申请日：2009-03-25

    申请人： Claude L. Bertin ,  Brent M. Segal ,  Darren K. Brock

    发明人： Claude L. Bertin ,  Brent M. Segal ,  Darren K. Brock

    IPC分类号： G11C11/54 ,  B82Y30/00

    CPC分类号： G06N3/063

    摘要： Physical neural networks based nanotechnology include dendrite circuits that comprise non-volatile nanotube switches. A first terminal of the non-volatile nanotube switches is able to receive an electrical signal and a second terminal of the non-volatile nanotube switches is coupled to a common node that sums any electrical signals at the first terminals of the nanotube switches. The neural networks further includes transfer circuits to propagate the electrical signal, synapse circuits, and axon circuits.

    摘要翻译： 基于物理神经网络的纳米技术包括包含非挥发性纳米管开关的枝晶电路。 非挥发性纳米管开关的第一端子能够接收电信号，并且非易失性纳米管开关的第二端子耦合到公共节点，该公共节点与纳米管开关的第一端子处的任何电信号相加。 神经网络还包括传输电路以传播电信号，突触电路和轴突电路。

    Methods of making nanotube-based switching elements and logic circuits
    89.
    发明授权
    Methods of making nanotube-based switching elements and logic circuits 有权
    制作纳米管开关元件和逻辑电路的方法

    公开(公告)号：US07839176B2

    公开(公告)日：2010-11-23

    申请号：US12476808

    申请日：2009-06-02

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

    IPC分类号： H03K19/20

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/17 ,  H01H1/0094 ,  H01H1/027 ,  H01H2001/0005 ,  H01L27/28 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/762 ,  Y10S977/932 ,  Y10S977/94 ,  Y10T29/49002

    摘要： Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element. Under another embodiment of the invention, the output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node. Under another embodiment of the invention, the isolation structure includes electrodes disposed on opposite sides of the nanotube channel element and said electrodes produce substantially the same electric field. Under another embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.

    摘要翻译： 基于纳米管的开关元件和逻辑电路。 在本发明的一个实施例中，开关元件包括输入节点，输出节点，具有至少一个导电纳米管的纳米管通道元件和控制电极。 控制电极相对于纳米管通道元件设置，以在输入节点和输出节点之间可控制地形成导电通道。 通道至少包括所述纳米管通道元件。 输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。 在本发明的另一实施例中，控制电极相对于纳米管通道元件布置，以通过引起所述纳米管通道元件的机电偏转而形成所述导电通道。 在本发明的另一个实施例中，输出节点包括相对于纳米管通道元件设置的隔离结构，使得通道形成从输出节点的状态基本上是不变的。 在本发明的另一个实施例中，隔离结构包括设置在纳米管通道元件的相对侧上的电极，所述电极产生基本上相同的电场。 在本发明的另一个实施例中，布尔逻辑电路包括至少一个输入端子和输出端子，以及电气地布置在所述至少一个输入端子和所述输出端子之间的纳米管开关元件网络。 纳米管切换元件的网络在所述至少一个输入端上实现布尔信号的布尔函数变换。 布尔函数变换包括函数内的布尔反转，如NOT或NOR函数。

    Isolated metal plug process for use in fabricating carbon nanotube memory cells
    90.
    发明授权
    Isolated metal plug process for use in fabricating carbon nanotube memory cells 有权
    用于制造碳纳米管记忆单元的隔离金属塞工艺

    公开(公告)号：US07824946B1

    公开(公告)日：2010-11-02

    申请号：US11429069

    申请日：2006-05-05

    申请人： Richard J. Carter ,  Peter A. Burke ,  Verne C. Hornback ,  Claude L. Bertin ,  Thomas Rueckes

    发明人： Richard J. Carter ,  Peter A. Burke ,  Verne C. Hornback ,  Claude L. Bertin ,  Thomas Rueckes

    IPC分类号： H01L21/00 ,  H01L21/64

    CPC分类号： H01H1/0094 ,  Y10S977/724 ,  Y10S977/732 ,  Y10S977/943

    摘要： The present invention is directed to structures and methods of fabricating electromechanical memory cells having nanotube crossbar elements. Such memory cells include a substrate having transistor with a contact that electrically contacts with the transistor. A first support layer is formed over the substrate with an opening that defines a lower chamber above the electrical contact. A nanotube crossbar element is arranged to span the lower chamber. A second support layer is formed with an opening that defines a top chamber above the lower chamber, the top chamber including an extension region that extends beyond an edge of the lower chamber to expose a portion of the top surface of the first support layer. A roof layer covers the top of the top chamber and includes an aperture that exposes a portion of the extension region of the top chamber and includes a plug that extends into the aperture in the roof layer to seal the top and bottom chambers. The memory cell further includes an electrode that overlies the crossbar element such that electrical signals can activate the electrode to attract or repel the crossbar element to set a memory state for the transistor.

    摘要翻译： 本发明涉及制造具有纳米管横杆元件的机电存储器单元的结构和方法。 这种存储单元包括具有与晶体管电接触的接触的晶体管的衬底。 第一支撑层形成在衬底上，其开口限定了电触点上方的下腔室。 纳米管横杆元件布置成跨越下室。 第二支撑层形成有开口，所述开口限定在所述下腔室上方的顶部腔室，所述顶部腔室包括延伸超出所述下部腔室的边缘以暴露所述第一支撑层的顶部表面的一部分的延伸区域。 屋顶层覆盖顶部室的顶部，并且包括露出顶部室的延伸区域的一部分并且包括延伸到顶部层中的孔中以密封顶部和底部室的插塞的孔。 存储单元还包括覆盖在横杆元件上的电极，使得电信号可以激活电极以吸引或排斥交叉开关元件以设置晶体管的存储状态。