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    Simplified protection layer for abrasion resistant glass coatings and methods for forming the same
    84.
    发明授权
    Simplified protection layer for abrasion resistant glass coatings and methods for forming the same 有权
    用于耐磨玻璃涂层的简化保护层及其形成方法

    公开(公告)号：US09394198B2

    公开(公告)日：2016-07-19

    申请号：US14097463

    申请日：2013-12-05

    Applicant: Intermolecular, Inc.

    Inventor： Guowen Ding ,  Minh Huu Le

    IPC: C03C17/34 ,  B05D7/00

    CPC classification number: C03C17/3435 ,  B05D7/56 ,  B05D7/58 ,  C03C17/3411 ,  C03C17/3441 ,  C03C2217/78 ,  C03C2218/328 ,  Y10T428/30

    Abstract: Embodiments provided herein describe abrasion resistant glass coatings and methods for forming abrasion resistant glass coatings. A glass body is provided. An abrasion resistant layer is formed above the glass body. The abrasion resistant layer includes an amorphous carbon. A pull-up layer is formed above the abrasion resistant layer. A protective layer is formed above the pull-up layer. The protective layer may include a titanium-based nitride. The pull-up lay may include tungsten oxide, zirconium oxide, manganese oxide, molybdenum oxide, titanium oxide, or a combination thereof.

    Abstract translation: 本文提供的实施方案描述了耐磨玻璃涂层和用于形成耐磨玻璃涂层的方法。 提供玻璃体。 在玻璃体的上方形成耐磨层。 耐磨层包括无定形碳。 在耐磨层上形成上拉层。 在上拉层上形成保护层。 保护层可以包括钛基氮化物。 上拉层可以包括氧化钨，氧化锆，氧化锰，氧化钼，氧化钛或其组合。

    Variable Composition Transparent Conductive Oxide Layer and Methods of Forming Thereof
    85.
    发明申请
    Variable Composition Transparent Conductive Oxide Layer and Methods of Forming Thereof 有权
    可变组成透明导电氧化物层及其形成方法

    公开(公告)号：US20160181468A1

    公开(公告)日：2016-06-23

    申请号：US14577967

    申请日：2014-12-19

    Applicant: Intermolecular, Inc.

    Inventor： Minh Huu Le ,  Jianhua Hu

    IPC: H01L33/00 ,  H01L33/38 ,  H01L33/42

    CPC classification number: H01L33/005 ,  H01L33/38 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091

    Abstract: Provided are light emitting diodes (LEDs) and methods of fabricating such LEDs. An LED may include a transparent conductive oxide (TCO) layer having a varying refractive index. For example, the refractive index may be higher at the interface of the TCO layer with an epitaxial stack than on the side of the TCO layer. The refractive index variability allows reducing light intensity losses in the LED. The refractive index variability may be achieved by feeding a substrate through a deposition chamber having a variable concentration of at least one process gas, such as oxygen. Specifically, the concentration of the process gas may be higher at one slit opening than at another slit opening. As the substrate moves through the deposition chamber, the TCO layer is continuously deposited. Due to the concentration variability, the resulting TCO layer may have a variable composition throughout the thickness of the TCO layer.

    Abstract translation: 提供了发光二极管（LED）和制造这种LED的方法。 LED可以包括具有变化的折射率的透明导电氧化物（TCO）层。 例如，在具有外延堆叠的TCO层的界面处的折射率可以高于在TCO层的侧面上的折射率。 折射率变化允许减少LED中的光强度损失。 折射率可变性可以通过将衬底通过具有可变浓度的至少一种工艺气体（例如氧气）的沉积室进行。 具体地，处理气体的浓度在一个狭缝开口处可以比在另一个狭缝开口处更高。 当衬底移动通过沉积室时，TCO层被连续沉积。 由于浓度变化，所得的TCO层可以在TCO层的整个厚度上具有可变的组成。

    Method to grow in-situ crystalline IGZO using co-sputtering targets
    87.
    发明授权
    Method to grow in-situ crystalline IGZO using co-sputtering targets 有权
    使用共溅射靶生长原位结晶IGZO的方法

    公开(公告)号：US09337030B2

    公开(公告)日：2016-05-10

    申请号：US14549158

    申请日：2014-11-20

    Applicant: Intermolecular Inc.

    Inventor： Seon-Mee Cho ,  Stuart Brinkley ,  Anh Duong ,  Majid Gharghi ,  Sang Lee ,  Minh Huu Le ,  Karl Littau ,  Jingang Su

    IPC: H01L21/02 ,  H01L29/786

    CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869

    Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

    Abstract translation: 使用共溅射技术使用PVD沉积In-Ga-Zn-O膜。 膜在包括氧和氩的气氛中沉积。 约300℃的加热器设定值导致衬底温度为约165℃。一个靶包括In，Ga，Zn和O的合金，原子比为In：Ga：Zn为约1:1:1的原子比。 第二靶标包括氧化锌的化合物。 膜以沉积状态呈现c轴对准的结晶（CAAC）相，而不需要随后的退火处理。

    Indium Zinc Oxide for Transparent Conductive Oxide Layer and Methods of Forming Thereof
    88.
    发明申请
    Indium Zinc Oxide for Transparent Conductive Oxide Layer and Methods of Forming Thereof 审中-公开
    用于透明导电氧化物层的氧化铟锌及其形成方法

    公开(公告)号：US20160111603A1

    公开(公告)日：2016-04-21

    申请号：US14519274

    申请日：2014-10-21

    Applicant: Intermolecular, Inc. ,  Epistar Corporation

    Inventor： Jianhua Hu ,  Ben Cardozo ,  Minh Huu Le ,  Sandeep Nijhawan ,  J.H. Yeh

    IPC: H01L33/42 ,  H01L33/32 ,  H01L33/00

    CPC classification number: H01L33/42 ,  H01L31/1884 ,  H01L33/0095 ,  H01L33/32 ,  H01L2933/0016 ,  Y02E10/50

    Abstract: Provided are light emitting diodes (LEDs) and methods of fabricating such LEDs. Specifically, an LED has an epitaxial stack and current distribution layer disposed on and interfacing the epitaxial stack. The current distribution layer includes indium oxide and zinc oxide such that the concentration of indium oxide is between about 5% and 15% by weight. During fabrication, the current distribution layer is annealed at a temperature of less than about 500° C. or even at less than about 400° C. These low anneal temperature helps preserving the overall thermal budget of the LED while still yielding a current distribution layer having a low resistivity and low adsorption. A particular composition and method of forming the current distribution layer allows using lower annealing temperatures. In some embodiments, the current distribution layer is sputtered using indium oxide and zinc oxide targets at a pressure of less than 5 mTorr.

    Abstract translation: 提供了发光二极管（LED）和制造这种LED的方法。 具体地说，LED具有外延层和电流分布层，其布置在外延层上并与外延层叠接合。 电流分布层包括氧化铟和氧化锌，使得氧化铟的浓度在约5重量％至15重量％之间。 在制造期间，电流分布层在小于约500℃或甚至低于约400℃的温度下退火。这些低退火温度有助于保持LED的总体热预算，同时仍然产生电流分布层 具有低电阻率和低吸附性。 形成电流分布层的特定组成和方法允许使用较低的退火温度。 在一些实施例中，使用氧化铟和氧化锌靶在小于5mTorr的压力下溅射电流分布层。

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