Multi-Spot Illumination For Improved Detection Sensitivity
    81.
    发明申请
    Multi-Spot Illumination For Improved Detection Sensitivity 有权
    多点照明提高检测灵敏度

    公开(公告)号:US20150041666A1

    公开(公告)日:2015-02-12

    申请号:US14455161

    申请日:2014-08-08

    CPC classification number: G01N21/9501 G01J1/04 G01N21/8806

    Abstract: Methods and systems for minimizing interference among multiple illumination beams generated from a non-uniform illumination source to provide an effectively uniform illumination profile over the field of view of an inspection system are presented. In some examples, a pulsed beam of light is split into multiple illumination beams such that each of the beams are temporally separated at the surface of the specimen under inspection. In some examples, multiple illumination beams generated from a non-uniform illumination source are projected onto spatially separated areas on the surface of the specimen. A point object of interest illuminated by each area is imaged onto the surface of a time-delay integration (TDI) detector. The images are integrated such that the relative position of the illumination areas along the direction of motion of the point object of interest has no impact on the illumination efficiency distribution over the field of view.

    Abstract translation: 提出了用于最小化从不均匀照明源产生的多个照明光束之间的干扰的方法和系统,以在检查系统的视场上提供有效均匀的照明轮廓。 在一些示例中,脉冲光束被分成多个照明光束,使得每个光束在被检查的样品的表面处在时间上分离。 在一些示例中,从不均匀照明源产生的多个照明光束投影到样本表面上的空间分离的区域上。 由每个区域照明的感兴趣的点对象被成像到时间延迟积分(TDI)检测器的表面上。 图像被集成为使得照明区域沿着感兴趣点对象的运动方向的相对位置对视场的照明效率分布没有影响。

    Photocathode including silicon substrate with boron layer

    公开(公告)号:US11081310B2

    公开(公告)日:2021-08-03

    申请号:US16177144

    申请日:2018-10-31

    Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

    Dual-column-parallel CCD sensor and inspection systems using a sensor

    公开(公告)号:US10313622B2

    公开(公告)日:2019-06-04

    申请号:US15337604

    申请日:2016-10-28

    Abstract: A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.

    183 nm CW Laser and Inspection System
    87.
    发明申请

    公开(公告)号:US20190107766A1

    公开(公告)日:2019-04-11

    申请号:US16205032

    申请日:2018-11-29

    Abstract: A laser assembly generates continuous wave (CW) laser output light in the range of approximately 181 nm to approximately 185 nm by generating fourth harmonic light from first fundamental CW light having a first fundamental wavelength between 1 μm and 1.1 μm, generating fifth harmonic light by mixing the fourth harmonic light with the first fundamental CW light, and then mixing the fifth harmonic light with second fundamental or signal CW light having a second wavelength between 1.26 μm and 1.82 μm. The fifth harmonic light is generated using an external cavity that circulates first fundamental CW light through a first nonlinear crystal, and by directing the fourth harmonic light through the first nonlinear crystal. The laser output light is generated using a second cavity that passes circulated second fundamental or signal CW light through a second nonlinear crystal, and directing the fifth harmonic light through the second nonlinear crystal.

    Photocathode including silicon substrate with boron layer

    公开(公告)号:US10199197B2

    公开(公告)日:2019-02-05

    申请号:US15353980

    申请日:2016-11-17

    Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

    Scanning Electron Microscope And Methods Of Inspecting And Reviewing Samples

    公开(公告)号:US20170329025A1

    公开(公告)日:2017-11-16

    申请号:US15667500

    申请日:2017-08-02

    Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

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