公开(公告)号：US20090034147A1

公开(公告)日：2009-02-05

申请号：US11888311

申请日：2007-07-31

申请人： Kadthala Ramaya Narendrnath ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Dmitry Lubomirsky ,  Muhammad Rasheed ,  Tony Kaushal

发明人： Kadthala Ramaya Narendrnath ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Dmitry Lubomirsky ,  Muhammad Rasheed ,  Tony Kaushal

IPC分类号： H01L21/683 ,  H01L21/67

CPC分类号： H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.

摘要翻译： 一种用于提供用于静电卡盘的流体分配元件的方法和装置，其减少了传热流体通道内的等离子体形成和电弧。 一个实施例包括板和电介质部件，其中介电部件插入板中。 板适于被定位在通道内以限定通风室，其中介电部件提供耦合到集气室的流体通道的至少一部分。 形成在电介质部件上的多孔介电层提供至少另一部分与气室相连的流体通道。 在其他实施例中，流体分配元件包括各种组件的布置，以限定流体通道，该流体通道不提供从用于基底的支撑表面到气室的视线路径。

公开(公告)号：US20080188090A1

公开(公告)日：2008-08-07

申请号：US11670701

申请日：2007-02-02

申请人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

发明人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

IPC分类号： H01L21/31 ,  C23C16/452

CPC分类号： C23C16/507 ,  H01J37/321

摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

公开(公告)号：US07323058B2

公开(公告)日：2008-01-29

申请号：US10996342

申请日：2004-11-22

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian A. Pancham ,  Ramakrishna Cheboli

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian A. Pancham ,  Ramakrishna Cheboli

IPC分类号： B05C3/02

CPC分类号： C23C18/1632 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/68742 ,  H01L21/68771 ,  H01L21/68792 ,  Y10S134/902

摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure.

摘要翻译： 提供无电沉积系统。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于 在第一和第二处理站之间传送衬底。 该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。

公开(公告)号：US20070004201A1

公开(公告)日：2007-01-04

申请号：US11385037

申请日：2006-03-20

申请人： Dmitry Lubomirsky ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  Nicolay Kovarsky ,  Kapila Wijekoon

发明人： Dmitry Lubomirsky ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  Nicolay Kovarsky ,  Kapila Wijekoon

IPC分类号： H01L21/44

CPC分类号： H01L21/288 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/1831 ,  C23C18/38 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76874

摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.

摘要翻译： 本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。 在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。 在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。 在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。 在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

公开(公告)号：US20060124468A1

公开(公告)日：2006-06-15

申请号：US11345011

申请日：2006-02-01

申请人： Nicolay Kovarsky ,  Michael Yang ,  Dmitry Lubomirsky

发明人： Nicolay Kovarsky ,  Michael Yang ,  Dmitry Lubomirsky

IPC分类号： C25D7/12

CPC分类号： H01L21/2885 ,  C25D17/001

摘要： Embodiments of the invention generally provide a substrate processing system and method. The substrate processing system generally includes a fluid basin configured to contain a plating solution therein, an anode assembly positioned in a lower portion of the fluid basin, a separation membrane positioned across the fluid basin above the anode assembly, a diffusion member positioned across the fluid basin above the separation membrane, and a plating membrane positioned across the fluid basin above the diffusion member. The plating method generally includes immersing the substrate in a plating solution, the plating solution containing metal ions to be plated, contacting a plating surface of the semiconductor substrate with a plating membrane, applying a plating bias to the semiconductor substrate to plate the metal ions in the plating solution positioned adjacent the plating surface of the substrate, removing the plating surface from contact with the plating membrane for a predetermined period of time, and recontacting the plating surface with the plating membrane to continue plating the metal ions onto the plating surface.

摘要翻译： 本发明的实施例通常提供一种基板处理系统和方法。 衬底处理系统通常包括配置成在其中容纳电镀液的流体池，位于流体池的下部的阳极组件，位于阳极组件上方的横跨流体池的隔离膜，跨过流体定位的扩散构件 在分离膜之上的盆地，以及位于扩散构件上方的横跨流体池的镀膜。 电镀方法通常包括将衬底浸入电镀溶液中，镀敷溶液含有待镀覆的金属离子，与半导体衬底的电镀表面接触镀覆膜，向半导体衬底施加电镀偏压以将金属离子 所述电镀液位于所述基板的电镀面附近，除去所述电镀表面与所述镀膜接触预定的时间，并且将所述电镀表面与所述电镀膜重新接触以继续将所述金属离子电镀到所述电镀表面上。

公开(公告)号：US07025861B2

公开(公告)日：2006-04-11

申请号：US10360234

申请日：2003-02-06

申请人： Nicolay Kovarsky ,  Michael Yang ,  Dmitry Lubomirsky

发明人： Nicolay Kovarsky ,  Michael Yang ,  Dmitry Lubomirsky

IPC分类号： C25F3/30 ,  B23H5/06 ,  C25D7/12 ,  C25D5/22

CPC分类号： H01L21/2885 ,  C25D17/001

摘要： Embodiments of the invention generally provide a substrate processing system and method. The substrate processing system generally includes a fluid basin configured to contain a plating solution therein, an anode assembly positioned in a lower portion of the fluid basin, a separation membrane positioned across the fluid basin above the anode assembly, a diffusion member positioned across the fluid basin above the separation membrane, and a plating membrane positioned across the fluid basin above the diffusion member. The plating method generally includes immersing the substrate in a plating solution, the plating solution containing metal ions to be plated, contacting a plating surface of the semiconductor substrate with a plating membrane, applying a plating bias to the semiconductor substrate to plate the metal ions in the plating solution positioned adjacent the plating surface of the substrate, removing the plating surface from contact with the plating membrane for a predetermined period of time, and recontacting the plating surface with the plating membrane to continue plating the metal ions onto the plating surface.

公开(公告)号：US20060062897A1

公开(公告)日：2006-03-23

申请号：US11034349

申请日：2005-01-11

申请人： Yuping Gu ,  Manoocher Birang ,  Arulkumar Shanmugasundram ,  Dmitry Lubomirsky ,  Joseph Stevens

发明人： Yuping Gu ,  Manoocher Birang ,  Arulkumar Shanmugasundram ,  Dmitry Lubomirsky ,  Joseph Stevens

IPC分类号： B05D3/12

CPC分类号： G01B11/0683 ,  C23C18/1632 ,  C23C18/1675 ,  G01N21/55 ,  G01N21/9501

摘要： An apparatus and a method of controlling an electroless deposition process by directing electromagnetic radiation towards the surface of a substrate and detecting the change in intensity of the electromagnetic radiation at one or more wavelengths reflected off features on the surface of the substrate is provided. In one embodiment, the detected end of an electroless deposition process step is measured while the substrate is rotated relative to the detection mechanism. In another embodiment, a detection mechanism, which is proximate to the processing region, directs electromagnetic radiation onto a substrate surface, which is then reflected by features on the substrate surface and is detected by the detection mechanism. In one aspect, the angle of the directed electromagnetic radiation is perpendicular to the surface of the substrate and the shape of the directed electromagnetic radiation spot is substantially circular in shape. In another aspect, the directed electromagnetic radiation spot is positioned at the center of rotation of the substrate. A controller can be used to monitor, store, and/or control the electroless deposition process by use of stored process values, comparison of data collected at different times, and various calculated time dependent data.

摘要翻译： 提供了一种通过将电磁辐射引导到衬底的表面并检测在衬底的表面上被反射的特征的一个或多个波长处的电磁辐射的强度变化来控制无电沉积工艺的装置和方法。 在一个实施例中，在基板相对于检测机构旋转的同时测量无电沉积工艺步骤的检测结束。 在另一个实施例中，靠近处理区域的检测机构将电磁辐射引导到衬底表面上，然后其被衬底表面上的特征反射并被检测机构检测。 一方面，定向电磁辐射的角度垂直于衬底的表面，并且定向电磁辐射光斑的形状基本上是圆形的。 在另一方面，定向电磁辐射光斑位于基底的旋转中心。 控制器可用于通过使用存储的过程值，不同时间收集的数据的比较和各种计算的时间相关数据来监测，存储和/或控制无电沉积过程。

公开(公告)号：US20050217586A1

公开(公告)日：2005-10-06

申请号：US11146687

申请日：2005-06-06

申请人： Dmitry Lubomirsky ,  Sheshraj Tulshibagwale ,  Donald Olgado ,  Avi Tepman

发明人： Dmitry Lubomirsky ,  Sheshraj Tulshibagwale ,  Donald Olgado ,  Avi Tepman

IPC分类号： H01L21/683 ,  H01L21/687 ,  C23C16/00

CPC分类号： H01L21/68742 ,  Y10S414/135

摘要： A lifting mechanism includes a plurality of lift pins which may be driven separately and independently upward to engage an alignment surface of the chamber using ambient atmospheric pressure as the chamber is evacuated by a pump. In the illustrated embodiment, each lift pin includes a piston which is exposed to the internal chamber pressure on one side of the piston, and is exposed to the external ambient pressure on the other side of the piston. As the pump evacuates the chamber, the internal chamber pressure decreases, causing each lift pin piston to drive the associated lift pin upward. Once all the lift pins have securely engaged the alignment surface, the lift pins may be clamped to a linking mechanism to permit a motor to actuate the lift pins during processing operations.

公开(公告)号：US06802947B2

公开(公告)日：2004-10-12

申请号：US09981191

申请日：2001-10-16

申请人： Donald J. K. Olgado ,  Michael Wood ,  Dmitry Lubomirsky

发明人： Donald J. K. Olgado ,  Michael Wood ,  Dmitry Lubomirsky

IPC分类号： C25D1700

CPC分类号： C25D7/123 ,  C25D5/028 ,  C25D17/001 ,  C25D17/06 ,  H01L21/2885

摘要： An apparatus and method for securing and electrically contacting a substrate on a non-production surface of the substrate. The apparatus includes a substrate holder assembly having a substrate engaging surface formed thereon, the substrate engaging surface being configured to engage a substrate on the non-production surface. The apparatus further includes an electrical contact device positioned on the substrate engaging surface, the electrical contact device including a plurality of radially spaced electrically conductive members configured to electrically communicate with the non-production surface of the substrate positioned on the substrate engaging surface. The method includes depositing a conductive seed layer on a production surface of the substrate, and depositing a backside conductive layer on a portion of the non-production side of the substrate, the backside conductive layer extending around a bevel of the substrate to electrically communicate with the seed layer. The method further includes securing the substrate in a chuck configured to engage the non-production surface of the substrate, contacting the backside conductive layer with an electrical cathode contact on the non-production side of the substrate, and plating over the conductive seed layer via application of an electrolyte to the production surface of the substrate and applying an electrical bias to the electrical cathode contact and an anode in communication with the electrolyte.

摘要翻译： 一种用于固定和电接触衬底的非生产表面上的衬底的装置和方法。 该设备包括具有形成在其上的衬底接合表面的衬底保持器组件，衬底接合表面被配置为接合非生产表面上的衬底。 所述装置还包括位于所述基板接合表面上的电接触装置，所述电接触装置包括多个径向隔开的导电构件，所述导电构件构造成与位于所述基板接合表面上的所述基板的非生产表面电连通。 该方法包括在衬底的生产表面上沉积导电种子层，以及在衬底的非生产侧的一部分上沉积背面导电层，所述背面导电层围绕衬底的斜面延伸以与 种子层。 该方法还包括将衬底固定在配置成接合衬底的非生产表面的卡盘中，使背面导电层与衬底的非生产侧上的电阴极接触接触，并且在导电种子层上电镀 将电解质施加到基材的生产表面上，并将电偏压施加到电阴极接触件和与电解质连通的阳极。

公开(公告)号：US06673199B1

公开(公告)日：2004-01-06

申请号：US09800876

申请日：2001-03-07

申请人： John M. Yamartino ,  Peter K. Loewenhardt ,  Dmitry Lubomirsky ,  Saravjeet Singh

发明人： John M. Yamartino ,  Peter K. Loewenhardt ,  Dmitry Lubomirsky ,  Saravjeet Singh

IPC分类号： H05H100

CPC分类号： H01J37/321 ,  H01J37/32623 ,  H01J37/3266

摘要： A substrate etching chamber has a substrate support, a gas supply to introduce a process gas into the chamber; an inductor antenna to sustain a plasma of the process gas in a process zone of the chamber, and an exhaust to exhaust the process gas. A magnetic field generator disposed about the chamber has first and second solenoids. A controller is adapted to control a power supply to provide a first current to the first solenoid and a second current to the second solenoid, thereby generating a magnetic field in the process zone of the chamber to controllably shape the plasma in the process zone to reduce etch rate variations across the substrate.

摘要翻译： 衬底蚀刻室具有衬底支撑件，用于将工艺气体引入腔室中的气体供应源; 电感天线，用于维持室的处理区中的处理气体的等离子体，以及排气以排出处理气体。 设置在室周围的磁场发生器具有第一和第二螺线管。 控制器适于控制电源以向第一螺线管提供第一电流，并将第二电流提供给第二螺线管，从而在腔室的过程区域中产生磁场，以可控地成形处理区域中的等离子体，以减少 衬底上的蚀刻速率变化。