公开(公告)号：US20070004201A1

公开(公告)日：2007-01-04

申请号：US11385037

申请日：2006-03-20

申请人： Dmitry Lubomirsky ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  Nicolay Kovarsky ,  Kapila Wijekoon

发明人： Dmitry Lubomirsky ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  Nicolay Kovarsky ,  Kapila Wijekoon

IPC分类号： H01L21/44

CPC分类号： H01L21/288 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/1831 ,  C23C18/38 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76874

摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.

摘要翻译： 本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。 在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。 在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。 在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。 在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

公开(公告)号：US07247222B2

公开(公告)日：2007-07-24

申请号：US10268284

申请日：2002-10-09

申请人： Michael X. Yang ,  Dmitry Lubomirsky ,  Yezdi Dordi ,  Saravjeet Singh ,  Sheshraj Tulshibagwale ,  Nicolay Kovarsky

发明人： Michael X. Yang ,  Dmitry Lubomirsky ,  Yezdi Dordi ,  Saravjeet Singh ,  Sheshraj Tulshibagwale ,  Nicolay Kovarsky

IPC分类号： C25B9/00 ,  C25C7/04 ,  C25B9/08

CPC分类号： H01L21/2885 ,  A23D7/00 ,  A23D7/005 ,  A23D7/01 ,  A23J7/00 ,  C07F9/103 ,  C25D7/123 ,  C25D17/001

摘要： Embodiments of the invention may generally provide a small volume electrochemical plating cell. The plating cell generally includes a fluid basin configured to contain a plating solution therein, the fluid basin having a substantially horizontal weir. The cell further includes an anode positioned in a lower portion of the fluid basin, the anode having a plurality of parallel channels formed therethrough, and a base member configured to receive the anode, the base member having a plurality of groves formed into an anode receiving surface, each of the plurality of grooves terminating into an annular drain channel. A membrane support assembly configured to position a membrane immediately above the anode in a substantially planar orientation with respect to the anode surface is provided, the membrane support assembly having a plurality of channels and bores formed therein.

摘要翻译： 本发明的实施方案通常可以提供小体积的电化学电镀单元。 电镀槽通常包括配置成在其中容纳电镀液的流体池，流体池具有基本上水平的堰。 电池还包括位于流体槽的下部的阳极，阳极具有穿过其形成的多个平行通道，以及构造成容纳阳极的基座构件，底座构件具有形成为阳极接收的多个槽 多个槽中的每一个终止于环形排水通道。 提供了一种膜支撑组件，其被配置为将膜垂直于阳极定位在相对于阳极表面的基本上平面的方向上，所述膜支撑组件具有形成在其中的多个通道和孔。

公开(公告)号：US20060237307A1

公开(公告)日：2006-10-26

申请号：US11473295

申请日：2006-06-22

申请人： Michael Yang ,  Dmitry Lubomirsky ,  Yezdi Dord ,  Saravjeet Singh ,  Sheshraj Tulshibagwale ,  Nicolay Kovarsky

发明人： Michael Yang ,  Dmitry Lubomirsky ,  Yezdi Dord ,  Saravjeet Singh ,  Sheshraj Tulshibagwale ,  Nicolay Kovarsky

IPC分类号： C25B11/00

CPC分类号： H01L21/2885 ,  A23D7/00 ,  A23D7/005 ,  A23D7/01 ,  A23J7/00 ,  C07F9/103 ,  C25D7/123 ,  C25D17/001

摘要： Embodiments of the invention may generally provide a small volume electrochemical plating cell. The plating cell generally includes a fluid basin configured to contain a plating solution therein, the fluid basin having a substantially horizontal weir. The cell further includes an anode positioned in a lower portion of the fluid basin, the anode having a plurality of parallel channels formed therethrough, and a base member configured to receive the anode, the base member having a plurality of groves formed into an anode receiving surface, each of the plurality of grooves terminating into an annular drain channel. A membrane support assembly configured to position a membrane immediately above the anode in a substantially planar orientation with respect to the anode surface is provided, the membrane support assembly having a plurality of channels and bores formed therein.

摘要翻译： 本发明的实施方案通常可以提供小体积的电化学电镀单元。 电镀槽通常包括配置成在其中容纳电镀液的流体池，流体池具有基本上水平的堰。 电池还包括位于流体槽的下部的阳极，阳极具有穿过其形成的多个平行通道，以及构造成容纳阳极的基座构件，底座构件具有形成为阳极接收的多个槽 多个槽中的每一个终止于环形排水通道。 提供了一种膜支撑组件，其被配置为将膜垂直于阳极定位在相对于阳极表面的基本上平面的方向上，膜支撑组件具有形成在其中的多个通道和孔。

公开(公告)号：US20050133374A1

公开(公告)日：2005-06-23

申请号：US10739891

申请日：2003-12-18

申请人： Nicolay Kovarsky ,  Dmitry Lubomirsky

发明人： Nicolay Kovarsky ,  Dmitry Lubomirsky

IPC分类号： C25D21/18 ,  C25D21/22

CPC分类号： C25D21/22

摘要： A method and apparatus for removing waste material from a plating solution is disclosed. The invention generally provides a plating cell having an electrolyte inlet and an electrolyte drain, an electrolyte storage unit in fluid communication with the electrolyte inlet, and a diffusion dialysis chamber in fluid communication with the electrolyte drain and the electrolyte storage unit. The diffusion dialysis chamber is generally configured to receive at least a portion of used electrolyte solution and remove waste material therefrom in order to provide a refreshed electrolyte solution to the electrolyte storage unit. A method generally includes supplying an electrolyte solution to a copper plating cell, plating copper onto a substrate in the plating cell with the electrolyte solution, removing used electrolyte solution from the plating cell, and refreshing a portion of the used electrolyte solution with a diffusion dialysis device.

摘要翻译： 公开了一种从电镀液中除去废料的方法和装置。 本发明通常提供一种具有电解质入口和电解液排出物的电镀槽，与电解质入口流体连通的电解质储存单元和与电解液排出物和电解质储存单元流体连通的扩散透析室。 扩散透析室通常被配置为接收至少一部分使用的电解质溶液并从其中除去废物，以便向电解质储存单元提供刷新的电解质溶液。 一种方法通常包括向镀铜电池提供电解质溶液，用电解液将铜镀在镀覆电池中的基底上，从电镀槽中除去使用的电解液，并用扩散透析刷新一部分所用电解质溶液 设备。

公开(公告)号：US20050082172A1

公开(公告)日：2005-04-21

申请号：US10690408

申请日：2003-10-21

申请人： Nicolay Kovarsky ,  Dmitry Lubomirsky ,  Alexander Hoermann ,  Saravjeet Singh

发明人： Nicolay Kovarsky ,  Dmitry Lubomirsky ,  Alexander Hoermann ,  Saravjeet Singh

IPC分类号： C25D21/14 ,  C25D21/18

CPC分类号： C25D21/14 ,  C25D21/18

摘要： In one embodiment, the present invention generally provides an apparatus and method for dispersing a chemical reagent into a plating solution. The apparatus generally includes a tank for containing the plating solution and a horizontal vessel in fluid communication with the tank, wherein the horizontal vessel has an input and an output. The apparatus further includes at least one shelf contained inside the horizontal vessel, wherein the at least one shelf extends between the input and the output and the chemical reagent rests on the at least one shelf. In another embodiment, the present invention generally provides an apparatus for dispersing a chemical reagent to a plating solution comprising a tank for containing the plating solution and a vertical vessel in fluid communication with the tank. A lower portion of the vertical vessel includes an inlet and an injector port and an upper portion of the vertical vessel includes an outlet and a manifold. The chemical reagent is positioned between the inlet and the outlet.

摘要翻译： 在一个实施方案中，本发明通常提供了将化学试剂分散到电镀溶液中的装置和方法。 该装置通常包括用于容纳电镀溶液的罐和与罐流体连通的水平容器，其中水平容器具有输入和输出。 该装置还包括容纳在水平容器内的至少一个搁架，其中至少一个货架在输入和输出之间延伸，化学试剂搁置在至少一个货架上。 在另一个实施方案中，本发明通常提供一种用于将化学试剂分散到包含用于容纳电镀溶液的罐和与罐流体连通的垂直容器的电镀溶液的装置。 垂直容器的下部包括入口和注射器端口，并且垂直容器的上部包括出口和歧管。 化学试剂位于入口和出口之间。

公开(公告)号：US20050056538A1

公开(公告)日：2005-03-17

申请号：US10664277

申请日：2003-09-17

申请人： Nicolay Kovarsky ,  Dmitry Lubomirsky ,  Yevgeniy Rabinovich

发明人： Nicolay Kovarsky ,  Dmitry Lubomirsky ,  Yevgeniy Rabinovich

IPC分类号： B01D61/44 ,  B01D71/36 ,  C25D3/38 ,  C25D7/12 ,  C25D17/00 ,  C25D17/02 ,  C25D17/10 ,  C25D17/12 ,  C25D21/00 ,  C25D21/18 ,  C25B9/00

CPC分类号： C25D17/12 ,  B01D61/44 ,  B01D71/36 ,  C25D7/123 ,  C25D17/001 ,  C25D17/10 ,  C25D21/12

摘要： A method and apparatus for plating a metal onto a substrate. The apparatus includes a fluid basin configured to contain a plating solution, an anode fluid volume positioned in a lower portion of the fluid basin, a cathode fluid volume positioned in an upper portion of the fluid basin, an ionic membrane positioned to separate the anode fluid volume from the cathode fluid volume, a plating electrode centrally positioned in the anode fluid volume, and a deplating electrode positioned adjacent the plating electrode in the anode fluid volume.

摘要翻译： 一种用于将金属电镀到基底上的方法和装置。 该装置包括流体池，其构造成容纳镀液，位于流体槽的下部的阳极流体体积，位于流体池的上部的阴极流体体积，定位成将阳极流体分离的离子膜 来自阴极流体体积的体积，位于阳极流体体积中心的电镀电极，以及位于阳极流体体积内的电镀电极附近的脱镀电极。

公开(公告)号：US20060124468A1

公开(公告)日：2006-06-15

申请号：US11345011

申请日：2006-02-01

申请人： Nicolay Kovarsky ,  Michael Yang ,  Dmitry Lubomirsky

发明人： Nicolay Kovarsky ,  Michael Yang ,  Dmitry Lubomirsky

IPC分类号： C25D7/12

CPC分类号： H01L21/2885 ,  C25D17/001

摘要： Embodiments of the invention generally provide a substrate processing system and method. The substrate processing system generally includes a fluid basin configured to contain a plating solution therein, an anode assembly positioned in a lower portion of the fluid basin, a separation membrane positioned across the fluid basin above the anode assembly, a diffusion member positioned across the fluid basin above the separation membrane, and a plating membrane positioned across the fluid basin above the diffusion member. The plating method generally includes immersing the substrate in a plating solution, the plating solution containing metal ions to be plated, contacting a plating surface of the semiconductor substrate with a plating membrane, applying a plating bias to the semiconductor substrate to plate the metal ions in the plating solution positioned adjacent the plating surface of the substrate, removing the plating surface from contact with the plating membrane for a predetermined period of time, and recontacting the plating surface with the plating membrane to continue plating the metal ions onto the plating surface.

摘要翻译： 本发明的实施例通常提供一种基板处理系统和方法。 衬底处理系统通常包括配置成在其中容纳电镀液的流体池，位于流体池的下部的阳极组件，位于阳极组件上方的横跨流体池的隔离膜，跨过流体定位的扩散构件 在分离膜之上的盆地，以及位于扩散构件上方的横跨流体池的镀膜。 电镀方法通常包括将衬底浸入电镀溶液中，镀敷溶液含有待镀覆的金属离子，与半导体衬底的电镀表面接触镀覆膜，向半导体衬底施加电镀偏压以将金属离子 所述电镀液位于所述基板的电镀面附近，除去所述电镀表面与所述镀膜接触预定的时间，并且将所述电镀表面与所述电镀膜重新接触以继续将所述金属离子电镀到所述电镀表面上。

公开(公告)号：US07025861B2

公开(公告)日：2006-04-11

申请号：US10360234

申请日：2003-02-06

申请人： Nicolay Kovarsky ,  Michael Yang ,  Dmitry Lubomirsky

发明人： Nicolay Kovarsky ,  Michael Yang ,  Dmitry Lubomirsky

IPC分类号： C25F3/30 ,  B23H5/06 ,  C25D7/12 ,  C25D5/22

CPC分类号： H01L21/2885 ,  C25D17/001

摘要： Embodiments of the invention generally provide a substrate processing system and method. The substrate processing system generally includes a fluid basin configured to contain a plating solution therein, an anode assembly positioned in a lower portion of the fluid basin, a separation membrane positioned across the fluid basin above the anode assembly, a diffusion member positioned across the fluid basin above the separation membrane, and a plating membrane positioned across the fluid basin above the diffusion member. The plating method generally includes immersing the substrate in a plating solution, the plating solution containing metal ions to be plated, contacting a plating surface of the semiconductor substrate with a plating membrane, applying a plating bias to the semiconductor substrate to plate the metal ions in the plating solution positioned adjacent the plating surface of the substrate, removing the plating surface from contact with the plating membrane for a predetermined period of time, and recontacting the plating surface with the plating membrane to continue plating the metal ions onto the plating surface.

公开(公告)号：US20110129616A1

公开(公告)日：2011-06-02

申请号：US12836991

申请日：2010-07-15

申请人： Nitin Ingle ,  Abhijit Basu Mallick ,  Earl Osman Solis ,  Nicolay Kovarsky ,  Olga Lyubimova

发明人： Nitin Ingle ,  Abhijit Basu Mallick ,  Earl Osman Solis ,  Nicolay Kovarsky ,  Olga Lyubimova

IPC分类号： H05H1/24

CPC分类号： C23C16/308 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/56 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32449

摘要： Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.

摘要翻译： 描述形成氧化硅层的方法。 所述方法包括同时将自由基前体和自由基 - 氧前体与无碳的含硅前体同时组合的步骤。 自由基前体和含硅前体之一含有氮。 该方法导致在衬底上沉积含硅 - 氧和氮的层。 然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有非常少的氮的氧化硅层。 自由基 - 氧前体和自由基前体可以在分离的等离子体或相同的等离子体中产生。 氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

公开(公告)号：US20070175752A1

公开(公告)日：2007-08-02

申请号：US11539477

申请日：2006-10-06

申请人： Michael Yang ,  Nicolay Kovarsky

发明人： Michael Yang ,  Nicolay Kovarsky

IPC分类号： C25B13/04

CPC分类号： C25D17/002 ,  A23D7/00 ,  A23D7/005 ,  A23D7/01 ,  A23J7/00 ,  C07F9/103 ,  C25D7/123 ,  C25D17/001 ,  C25D21/22 ,  H01L21/2885 ,  H01L21/76877

摘要： Embodiments of the invention provide a method for plating copper into features formed on a semiconductor substrate. The method includes positioning the substrate in a plating cell, wherein the plating cell includes a catholyte volume containing a catholyte solution, an anolyte volume containing an anolyte solution, an ionic membrane positioned to separate the anolyte volume from the catholyte volume, and an anode positioned in the anolyte volume. The method further includes applying a plating bias between the anode and the substrate, plating copper ions onto the substrate from the catholyte solution, and replenishing the copper ions plated onto the substrate from the catholyte solution with copper ions transported from the anolyte solution via the ionic membrane, wherein the catholyte solution has a copper concentration of greater than about 51 g/L.

摘要翻译： 本发明的实施例提供了一种将铜电镀到形成在半导体衬底上的特征的方法。 该方法包括将基板定位在电镀槽中，其中镀覆电池包括含有阴极电解液的阴极电解液体积，含有阳极电解液的阳极电解液体，将阳极电解液体积与阴极电解液容积分离的离子膜， 在阳极电解液中。 该方法还包括在阳极和衬底之间施加电镀偏压，从阴极电解液将铜离子镀覆到衬底上，并从阴极电解液中补充镀在衬底上的铜离子，铜离子从阳极电解液通过离子 膜，其中阴极电解液的铜浓度大于约51g / L。