公开(公告)号：US06802947B2

公开(公告)日：2004-10-12

申请号：US09981191

申请日：2001-10-16

申请人： Donald J. K. Olgado ,  Michael Wood ,  Dmitry Lubomirsky

发明人： Donald J. K. Olgado ,  Michael Wood ,  Dmitry Lubomirsky

IPC分类号： C25D1700

CPC分类号： C25D7/123 ,  C25D5/028 ,  C25D17/001 ,  C25D17/06 ,  H01L21/2885

摘要： An apparatus and method for securing and electrically contacting a substrate on a non-production surface of the substrate. The apparatus includes a substrate holder assembly having a substrate engaging surface formed thereon, the substrate engaging surface being configured to engage a substrate on the non-production surface. The apparatus further includes an electrical contact device positioned on the substrate engaging surface, the electrical contact device including a plurality of radially spaced electrically conductive members configured to electrically communicate with the non-production surface of the substrate positioned on the substrate engaging surface. The method includes depositing a conductive seed layer on a production surface of the substrate, and depositing a backside conductive layer on a portion of the non-production side of the substrate, the backside conductive layer extending around a bevel of the substrate to electrically communicate with the seed layer. The method further includes securing the substrate in a chuck configured to engage the non-production surface of the substrate, contacting the backside conductive layer with an electrical cathode contact on the non-production side of the substrate, and plating over the conductive seed layer via application of an electrolyte to the production surface of the substrate and applying an electrical bias to the electrical cathode contact and an anode in communication with the electrolyte.

摘要翻译： 一种用于固定和电接触衬底的非生产表面上的衬底的装置和方法。 该设备包括具有形成在其上的衬底接合表面的衬底保持器组件，衬底接合表面被配置为接合非生产表面上的衬底。 所述装置还包括位于所述基板接合表面上的电接触装置，所述电接触装置包括多个径向隔开的导电构件，所述导电构件构造成与位于所述基板接合表面上的所述基板的非生产表面电连通。 该方法包括在衬底的生产表面上沉积导电种子层，以及在衬底的非生产侧的一部分上沉积背面导电层，所述背面导电层围绕衬底的斜面延伸以与 种子层。 该方法还包括将衬底固定在配置成接合衬底的非生产表面的卡盘中，使背面导电层与衬底的非生产侧上的电阴极接触接触，并且在导电种子层上电镀 将电解质施加到基材的生产表面上，并将电偏压施加到电阴极接触件和与电解质连通的阳极。

公开(公告)号：US06770565B2

公开(公告)日：2004-08-03

申请号：US10043561

申请日：2002-01-08

申请人： Donald J. K. Olgado ,  Avi Tepman ,  Dmitry Lubomirsky ,  Timothy R. Webb

发明人： Donald J. K. Olgado ,  Avi Tepman ,  Dmitry Lubomirsky ,  Timothy R. Webb

IPC分类号： H01L2302

CPC分类号： H01L21/6708 ,  C23F1/18 ,  H01L21/32115 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/7684

摘要： A method of planarizing a metal conductive layer on a substrate is provided. In one embodiment, a substrate having a metal conductive layer disposed on a top surface of the substrate is provided on a substrate support. The substrate support is rotated and the top surface of the substrate is contacted with a liquid etching composition. The metal conductive layer is then exposed to an etchant gas in order to planarize the top surface of the metal conductive layer. Also provided is an apparatus for etching a metal conductive layer on a substrate. The apparatus comprises a container, a substrate support disposed in the container, a rotation actuator attached to the substrate support, and a fluid delivery assembly disposed in the container.

摘要翻译： 提供了在基板上平面化金属导电层的方法。 在一个实施例中，在衬底支架上设置具有设置在衬底顶表面上的金属导电层的衬底。 衬底支撑件旋转并且衬底的顶表面与液体蚀刻组合物接触。 然后将金属导电层暴露于蚀刻剂气体，以平坦化金属导电层的顶表面。 还提供了一种用于在基板上蚀刻金属导电层的装置。 该装置包括容器，设置在容器中的基板支撑件，附接到基板支撑件的旋转致动器以及设置在容器中的流体输送组件。

公开(公告)号：US07138014B2

公开(公告)日：2006-11-21

申请号：US10059572

申请日：2002-01-28

申请人： Joseph J. Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald J. K. Olgado ,  Howard E. Grunes ,  Yeuk-Fai Edwin Mok

发明人： Joseph J. Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald J. K. Olgado ,  Howard E. Grunes ,  Yeuk-Fai Edwin Mok

IPC分类号： C23C14/00 ,  B05C11/00 ,  B05C3/00

CPC分类号： H01L21/67126 ,  C23C18/1607 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/1678 ,  C25D7/123 ,  C25D17/001

摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

公开(公告)号：US10283321B2

公开(公告)日：2019-05-07

申请号：US13251714

申请日：2011-10-03

申请人： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

发明人： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

IPC分类号： H01J37/32

摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

公开(公告)号：US20160035544A1

公开(公告)日：2016-02-04

申请号：US14614199

申请日：2015-02-04

申请人： Dmitry Lubomirsky ,  Son T. Nguyen ,  Anh N. Nguyen ,  David Palagashvill

发明人： Dmitry Lubomirsky ,  Son T. Nguyen ,  Anh N. Nguyen ,  David Palagashvill

IPC分类号： H01J37/32 ,  H01L21/687 ,  C23C16/52 ,  H01L21/67 ,  C23C16/458 ,  C23C16/46

CPC分类号： H01J37/32724 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68785

摘要： A wafer carrier is described with independent isolated heater zones. In one example, the carrier has a puck to carry a workpiece for fabrication processes, a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, and each having a heater to heat a respective block of the heater plate, and a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate having a cooling channel to carry a heat transfer fluid to transfer heat from the cooling plate.

摘要翻译： 用独立的隔离加热器区域描述晶片载体。 在一个示例中，载体具有用于承载用于制造工艺的工件的圆盘，具有多个热耦合到圆盘的热隔离块的加热器板，并且每个具有用于加热加热器板的相应块的加热器， 冷却板固定并加热耦合到加热板，冷却板具有一个冷却通道，用于承载传热流体以从冷却板传递热量。

公开(公告)号：US09068265B2

公开(公告)日：2015-06-30

申请号：US13363342

申请日：2012-01-31

申请人： Dmitry Lubomirsky ,  Kartik Ramaswamy ,  Kallol Bera ,  Jennifer Sun

发明人： Dmitry Lubomirsky ,  Kartik Ramaswamy ,  Kallol Bera ,  Jennifer Sun

IPC分类号： B05B5/00 ,  B05B1/14 ,  C23C16/509 ,  C23C16/455 ,  H01J37/32

CPC分类号： C23C16/5096 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32559

摘要： Embodiments of the present invention provide a gas distribution plate assembly having protective elements for plasma processing. The gas distribution plate assembly includes a base plate having a front side and a backside, and a plurality of protective elements in direct contact with the base plate. The protective elements cover the front side of the base plate to protect the base plate from a plasma processing environment during use.

摘要翻译： 本发明的实施例提供一种具有用于等离子体处理的保护元件的气体分配板组件。 气体分配板组件包括具有前侧和后侧的基板，以及与基板直接接触的多个保护元件。 保护元件覆盖基板的前侧，以在使用过程中保护基板免受等离子体处理环境的影响。

公开(公告)号：US08937800B2

公开(公告)日：2015-01-20

申请号：US13867515

申请日：2013-04-22

申请人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, Jr. ,  Samer Banna

发明人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, Jr. ,  Samer Banna

IPC分类号： H02N13/00 ,  H01L21/67

CPC分类号： H02N13/00 ,  H01L21/67103

摘要： Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.

摘要翻译： 描述了具有RF和温度均匀性的静电卡盘（ESCs）。 例如，ESC包括顶部电介质层。 上部金属部分设置在顶部电介质层的下方。 第二电介质层设置在多个像素化电阻加热器的上方，并且被上部金属部分部分地包围。 第三电介质层设置在第二电介质层的下方，第三介电层和第二电介质层之间具有边界。 多个通孔设置在第三电介质层中。 总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。 第四电介质层设置在母线功率分配层的下方，第四电介质层和第三电介质层之间具有边界。 金属基底设置在第四电介质层的下方。 金属基座包括容纳在其中的多个高功率加热器元件。

公开(公告)号：US20130279066A1

公开(公告)日：2013-10-24

申请号：US13867515

申请日：2013-04-22

申请人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, JR. ,  Samer Banna

发明人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, JR. ,  Samer Banna

IPC分类号： H02N13/00

CPC分类号： H02N13/00 ,  H01L21/67103

摘要： Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.

摘要翻译： 描述了具有RF和温度均匀性的静电卡盘（ESCs）。 例如，ESC包括顶部电介质层。 上部金属部分设置在顶部电介质层的下方。 第二电介质层设置在多个像素化电阻加热器的上方，并且被上部金属部分部分地包围。 第三电介质层设置在第二电介质层的下方，第三电介质层和第二电介质层之间具有边界。 多个通孔设置在第三电介质层中。 总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。 第四电介质层设置在母线功率分配层的下方，第四电介质层和第三电介质层之间具有边界。 金属基底设置在第四电介质层的下方。 金属基座包括容纳在其中的多个高功率加热器元件。

公开(公告)号：US08357435B2

公开(公告)日：2013-01-22

申请号：US12210982

申请日：2008-09-15

申请人： Dmitry Lubomirsky ,  Qiwei Liang ,  Jang Gyoo Yang

发明人： Dmitry Lubomirsky ,  Qiwei Liang ,  Jang Gyoo Yang

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： B08B7/00 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/509 ,  H01J37/32449

摘要： Methods of depositing and curing a dielectric material on a substrate are described. The methods may include the steps of providing a processing chamber partitioned into a first plasma region and a second plasma region, and delivering the substrate to the processing chamber, where the substrate occupies a portion of the second plasma region. The methods may further include forming a first plasma in the first plasma region, where the first plasma does not directly contact with the substrate, and depositing the dielectric material on the substrate to form a dielectric layer. One or more reactants excited by the first plasma are used in the deposition of the dielectric material. The methods may additional include curing the dielectric layer by forming a second plasma in the second plasma region, where one or more carbon-containing species is removed from the dielectric layer.

摘要翻译： 描述了在衬底上沉积和固化电介质材料的方法。 该方法可以包括以下步骤：提供分隔成第一等离子体区域和第二等离子体区域的处理室，以及将衬底输送到处理室，其中衬底占据第二等离子体区域的一部分。 所述方法可以进一步包括在第一等离子体区域中形成第一等离子体，其中第一等离子体不直接与衬底接触，并将电介质材料沉积在衬底上以形成电介质层。 在电介质材料的沉积中使用由第一等离子体激发的一种或多种反应物。 所述方法可以包括通过在第二等离子体区域中形成第二等离子体来固化介电层，其中从电介质层去除一个或多个含碳物质。

公开(公告)号：US08232176B2

公开(公告)日：2012-07-31

申请号：US11765944

申请日：2007-06-20

申请人： Dmitry Lubomirsky ,  Srinivas D. Nemani ,  Ellie Yieh

发明人： Dmitry Lubomirsky ,  Srinivas D. Nemani ,  Ellie Yieh

IPC分类号： H01L21/762

CPC分类号： H01L21/76229

摘要： Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.

摘要翻译： 描述了减少电介质层中的膜破裂的方法。 所述方法可以包括以下步骤：在衬底上沉积第一电介质膜并通过对膜进行蚀刻来去除第一电介质膜的顶部。 所述方法还可以包括在蚀刻的第一膜上沉积第二电介质膜，以及去除第二电介质膜的顶部。 此外，所述方法可以包括退火第一和第二介电膜以形成电介质层，其中从第一和第二电介质膜去除顶部部分降低了介电层中的应力水平。