公开(公告)号：US20090032965A1

公开(公告)日：2009-02-05

申请号：US12216808

申请日：2008-07-10

申请人： Yasushi Urakami ,  Hitoshi Yamaguchi ,  Jun Sakakibara

发明人： Yasushi Urakami ,  Hitoshi Yamaguchi ,  Jun Sakakibara

IPC分类号： H01L23/48

CPC分类号： H01L29/7813 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41741 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a first semiconductor layer; a p-n column portion over the first semiconductor layer and including second and third semiconductor layers, which are alternately arranged; and a peripheral portion adjacently to the p-n column portion and including a fourth semiconductor layer. An end second semiconductor layer has an impurity amount equal to or larger than a half of other second semiconductor layers. The third semiconductor layers include a large impurity amount portion adjacent to the end second semiconductor layer. The large impurity amount portion includes at least one third semiconductor layer having an impurity amount larger than an impurity amount of other third semiconductor layers.

摘要翻译： 一种半导体器件包括：第一半导体层; 在第一半导体层上的p-n列部分，并且包括交替布置的第二和第三半导体层; 以及与p-n列部分相邻并包括第四半导体层的周边部分。 端部第二半导体层的杂质量等于或大于其它第二半导体层的一半。 第三半导体层包括与端部第二半导体层相邻的大杂质量部分。 大杂质量部分包括杂质量大于其它第三半导体层的杂质量的至少一个第三半导体层。

公开(公告)号：US20080246096A1

公开(公告)日：2008-10-09

申请号：US12078369

申请日：2008-03-31

申请人： Jun Sakakibara ,  Hitoshi Yamaguchi

发明人： Jun Sakakibara ,  Hitoshi Yamaguchi

IPC分类号： H01L27/06 ,  H01L21/329 ,  H01L29/872

CPC分类号： H01L29/872 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/32 ,  H01L29/7806 ,  H01L29/861

摘要： A semiconductor device includes a substrate, a plurality of first columns having a first conductivity type, a plurality of second columns having a second conductivity type, a first electrode, and a second electrode. The first columns and the second columns are alternately arranged on the substrate to provide a super junction structure. The first electrode is disposed on the super junction structure, forms schottky junctions with the first columns, and forms ohmic junctions with the second columns. The second electrode is disposed on the substrate on an opposite side of the super junction structure. At least a part of the substrate and the super junction structure has lattice defects to provide a lifetime control region at which a lifetime of a minority carrier is controlled to be short.

摘要翻译： 半导体器件包括衬底，具有第一导电类型的多个第一列，具有第二导电类型的多个第二列，第一电极和第二电极。 第一列和第二列交替地布置在基板上以提供超连接结构。 第一电极设置在超结结构上，与第一列形成肖特基结，并与第二列形成欧姆结。 第二电极设置在超级结结构的相对侧上的衬底上。 衬底和超结结构的至少一部分具有晶格缺陷，以提供寿命控制区域，在该寿命期内少数载流子的寿命被控制为短。

公开(公告)号：US20070120201A1

公开(公告)日：2007-05-31

申请号：US11598646

申请日：2006-11-14

申请人： Hitoshi Yamaguchi ,  Jun Sakakibara

发明人： Hitoshi Yamaguchi ,  Jun Sakakibara

IPC分类号： H01L29/76

CPC分类号： H01L29/66712 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813

摘要： A semiconductor device having a super junction MOS transistor includes: a semiconductor substrate; a first semiconductor layer on the substrate; a second semiconductor layer on the first semiconductor layer; a channel forming region on a first surface portion of the second semiconductor layer; a source region on a first surface portion of the channel forming region; a source contact region on a second surface portion of the channel forming region; a gate electrode on a third surface portion of the channel forming region; a source electrode on the source region and the source contact region; a drain electrode on a backside of the substrate; and an anode electrode on a second surface portion of the second semiconductor layer. The anode electrode provides a Schottky barrier diode.

摘要翻译： 具有超结MOS晶体管的半导体器件包括：半导体衬底; 在所述基板上的第一半导体层; 在所述第一半导体层上的第二半导体层; 在第二半导体层的第一表面部分上的沟道形成区; 在所述沟道形成区域的第一表面部分上的源极区域; 在所述沟道形成区域的第二表面部分上的源极接触区域; 在沟道形成区域的第三表面部分上的栅电极; 源极区域和源极接触区域上的源极电极; 位于衬底背面的漏电极; 以及在所述第二半导体层的第二表面部分上的阳极电极。 阳极电极提供肖特基势垒二极管。

公开(公告)号：US20060275980A1

公开(公告)日：2006-12-07

申请号：US11434124

申请日：2006-05-16

申请人： Jun Sakakibara ,  Hitoshi Yamaguchi ,  Naohiro Suzuki

发明人： Jun Sakakibara ,  Hitoshi Yamaguchi ,  Naohiro Suzuki

IPC分类号： H01L21/8242 ,  H01L29/76

CPC分类号： H01L29/861 ,  H01L27/0255 ,  H01L27/0629 ,  H01L29/0684 ,  H01L29/0692 ,  H01L29/4236 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/7818

摘要： A semiconductor device includes: a semiconductor substrate having a first surface and a second surface, wherein the substrate has a first conductive type; a first trench extending from the first surface of the semiconductor substrate in a depth direction; and an epitaxial semiconductor layer having a second conductive type, wherein the epitaxial semiconductor layer is disposed in the first trench. The first trench includes an inner wall as an interface between the semiconductor substrate and the epitaxial semiconductor layer so that the interface provides a PN junction. The first trench has an aspect ratio equal to or larger than 1.

公开(公告)号：US20050230747A1

公开(公告)日：2005-10-20

申请号：US11156451

申请日：2005-06-21

申请人： Naohiro Suzuki ,  Jun Sakakibara ,  Yoshitaka Noda ,  Hitoshi Yamaguchi

发明人： Naohiro Suzuki ,  Jun Sakakibara ,  Yoshitaka Noda ,  Hitoshi Yamaguchi

IPC分类号： H01L29/41 ,  H01L21/336 ,  H01L21/8222 ,  H01L21/8234 ,  H01L21/8248 ,  H01L21/8249 ,  H01L21/84 ,  H01L27/06 ,  H01L27/08 ,  H01L27/088 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/49 ,  H01L29/732 ,  H01L29/739 ,  H01L29/76 ,  H01L29/78 ,  H01L29/786 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/66681 ,  H01L29/7394 ,  H01L29/7824 ,  H01L29/7825

摘要： A semiconductor device includes a base P region, a source N+ region, and a drain N+ region formed in a surface layer portion on a principal surface in an N− silicon layer. In the surface layer portion on the principal surface, an N well region is formed deeper than the drain N+ region in a region including the drain N+ region and is in contact with the base P region. A trench is formed so as to penetrate the base P region in a direction toward the drain N+ region from the source N+ region as a planar structure. A gate electrode is formed via a gate insulating film in the inside of the trench.

摘要翻译： 半导体器件包括在N - 硅层。 在主表面的表层部分，在包括漏极N + SUP区域的区域中，N阱区形成得比漏极N + + SUP区域深，并与之接触 与基地区P。 形成沟槽，以从源极N +区域的漏极N + SUP区域的方向穿过基极P区域作为平面结构。 栅极电极通过沟槽内部的栅极绝缘膜形成。

公开(公告)号：US06525375B1

公开(公告)日：2003-02-25

申请号：US09688154

申请日：2000-10-16

申请人： Hitoshi Yamaguchi ,  Toshio Sakakibara ,  Jun Sakakibara ,  Takumi Shibata ,  Toshiyuki Morishita

发明人： Hitoshi Yamaguchi ,  Toshio Sakakibara ,  Jun Sakakibara ,  Takumi Shibata ,  Toshiyuki Morishita

IPC分类号： H01L2976

CPC分类号： H01L29/7813 ,  H01L29/04 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/66348 ,  H01L29/66378 ,  H01L29/66659 ,  H01L29/66704 ,  H01L29/66734 ,  H01L29/66787 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/749 ,  H01L29/78 ,  H01L29/7803 ,  H01L29/7809 ,  H01L29/7816 ,  H01L29/7817 ,  H01L29/7824 ,  H01L29/7825 ,  H01L29/7828 ,  H01L29/7835

摘要： In a semiconductor device, a p-type base region is provided in an n−-type substrate to extend from a principal surface of the substrate in a perpendicular direction to the principal surface. An n+-type source region extends in the p-type base region from the principal surface in the perpendicular direction, and an n+-type drain region extends in the substrate separately from the p-type base region with a drift region interposed therebetween. A trench is formed to penetrate the p-type base region from the n+-type source region in a direction parallel to the principal surface. A gate electrode is formed in the trench through a gate insulating film. Accordingly, a channel region can be formed with a channel width in a depth direction of the trench when a voltage is applied to the gate electrode.

摘要翻译： 在半导体器件中，p型基极区域设置在n型衬底中，以从垂直于主表面的方向从衬底的主表面延伸。 n +型源极区域在垂直方向上从主表面延伸到p型基极区域中，并且n +型漏极区域在p型基极区域中与P型基极区域分开延伸，并且其间插入漂移区域。 形成沟槽，以在平行于主表面的方向上从n +型源极区域穿透p型基极区域。 栅电极通过栅极绝缘膜形成在沟槽中。 因此，当向栅电极施加电压时，可以在沟槽的深度方向上形成沟道区域。

公开(公告)号：US5499807A

公开(公告)日：1996-03-19

申请号：US210276

申请日：1994-03-18

申请人： Hajime Nakamura ,  Jun Sakakibara

发明人： Hajime Nakamura ,  Jun Sakakibara

IPC分类号： B65H3/52 ,  B65H7/02 ,  B65H7/06 ,  B65H7/12 ,  G03G15/00

CPC分类号： B65H3/5238 ,  B65H7/12 ,  B65H2511/13 ,  B65H2511/524 ,  B65H2515/34 ,  B65H2515/708 ,  B65H2553/21 ,  B65H2701/1912

摘要： An automatic paper feeding apparatus is designed to separate and feed originals by means of a separation pad and a feeding roller. A pressure sensitive conductive rubber is used for the separation pad to convert a change in thickness of an original into an electrical signal, thereby detecting a conveyed state, e.g., a multiple paper-conveying error, of the original.

摘要翻译： 自动送纸装置被设计成通过分离垫和进给辊分离和进给原稿。 压敏导电橡胶用于分离垫，以将原稿的厚度变化转换为电信号，从而检测原稿的输送状态，例如多纸传送误差。

公开(公告)号：US5402249A

公开(公告)日：1995-03-28

申请号：US124195

申请日：1993-09-21

申请人： Junichi Koseki ,  Hajime Nakamura ,  Jun Sakakibara

发明人： Junichi Koseki ,  Hajime Nakamura ,  Jun Sakakibara

IPC分类号： H04N1/028 ,  H04N1/407 ,  H04N5/16 ,  H04N5/30 ,  H04N1/40

CPC分类号： H04N1/4076

摘要： An integrated circuit for processing an analog image signal obtained from a CCD, etc. and converting the processed image signal to a digital image signal. The integrated circuit includes a circuit for adjusting an offset voltage included in the analog image signal, a circuit for sampling/holding the image signal from the adjusting circuit, a variable amplifier for varying an amplitude of the image signal output from the sampling/holding circuit, an analog/digital converter for converting the image signal from the variable amplifier to a digital signal, and a circuit for detecting a DC component included in the digital image signal and providing the detection result to the adjusting circuit. Correction of a DC voltage component of the analog image signal and amplitude adjustment of the analog image signal can be performed by using a single LSI, and the LSI can be connected to various types of CCDs without using an additional circuit.

摘要翻译： 一种用于处理从CCD等获得的模拟图像信号的集成电路，并将经处理的图像信号转换为数字图像信号。 集成电路包括用于调整模拟图像信号中包括的偏移电压的电路，用于对来自调节电路的图像信号进行采样/保持的电路，用于改变从采样/保持电路输出的图像信号的幅度的可变放大器 ，用于将来自可变放大器的图像信号转换为数字信号的模拟/数字转换器，以及用于检测数字图像信号中包括的DC分量并将调整电路提供检测结果的电路。 模拟图像信号的DC电压分量的校正和模拟图像信号的幅度调整可以通过使用单个LSI来执行，并且可以在不使用附加电路的情况下将LSI连接到各种类型的CCD。

公开(公告)号：US5282060A

公开(公告)日：1994-01-25

申请号：US744401

申请日：1991-08-13

申请人： Shuji Kizu ,  Junichi Koseki ,  Jun Sakakibara

发明人： Shuji Kizu ,  Junichi Koseki ,  Jun Sakakibara

IPC分类号： H01L27/148 ,  H03M1/18 ,  H04N1/407 ,  H04N5/335 ,  H04N5/355 ,  H04N5/369 ,  H04N5/372 ,  H04N5/378 ,  H04N1/38

CPC分类号： H04N1/4076

摘要： A gain control signal is produced according to the difference in level between the signal obtained by scanning the white reference plate and the previously stored standard signal. Based on the gain control signal, the amplification level of the signal obtained by scanning the document is adjusted by a gain controller, and then the resulting signal is converted into a digital signal and supplied outside.

摘要翻译： 根据通过扫描白色参考板获得的信号与先前存储的标准信号之间的电平差产生增益控制信号。 基于增益控制信号，通过增益控制器调整通过扫描文档获得的信号的放大电平，然后将得到的信号转换成数字信号并在外部提供。

公开(公告)号：US08792616B2

公开(公告)日：2014-07-29

申请号：US13030518

申请日：2011-02-18

申请人： Manabu Tanaka ,  Jun Sakakibara ,  Makoto Kaneko

发明人： Manabu Tanaka ,  Jun Sakakibara ,  Makoto Kaneko

IPC分类号： H05G1/46 ,  H05G1/60 ,  H05G1/62 ,  G01N23/14 ,  A61B6/04

CPC分类号： A61B6/504 ,  A61B6/0457 ,  A61B6/4441 ,  A61B6/4464 ,  A61B6/463 ,  A61B6/469 ,  A61B6/481 ,  A61B6/5241 ,  A61B6/527 ,  A61B6/541 ,  A61B6/542

摘要： An X-ray image diagnosis apparatus includes: an imaging unit supporting an X-ray generation unit and an X-ray detection unit to face each other to take an image of a subject placed on a bed top panel; a control unit to execute a step movement process of at least one of the imaging unit and top panel and take images of the subject at plural stages; and an image processing unit that processes image data taken at the plural stages. The control unit sets plural regions of interest (ROI) in an imaging area of the subject when an image is taken after a contrast medium is injected into the subject, measures a change of an image level in the ROI to detect a flow of the contrast medium, and makes at least one of the imaging unit and top panel move to the next imaging stage based on the detection result.

摘要翻译： X射线图像诊断装置包括：成像单元，其支撑X射线产生单元和X射线检测单元，以彼此面对以拍摄放置在床顶板上的被摄体的图像; 控制单元，用于执行所述成像单元和顶板中的至少一个的步进移动处理，并且以多个阶段拍摄所述对象的图像; 以及处理在多个阶段拍摄的图像数据的图像处理单元。 控制单元在将造影剂注入对象后拍摄图像时，在被摄体的成像区域中设置多个感兴趣区域（ROI），测量ROI中的图像水平的变化以检测对比度的流动 介质，并且使得成像单元和顶板中的至少一个基于检测结果移动到下一个成像阶段。