摘要:
The light intensity of a light beam emitted from a light source is appropriately controlled when the light beam is transmitted through a variable optical coupling efficiency device in an optical head. During a read mode, the light beam from the light source is incident on an optical disk at an intensity relatively weaker than that of the light source. By switching the optical coupling efficiency of the variable optical coupling efficiency device between a write mode and a read mode, the light intensity directed to an optical recording medium is substantially varied from the write mode to the read mode. This arrangement eliminates the need for substantially increasing the optical output power ratio of the light source of write power to read power.
摘要:
A method and an apparatus for driving an optical recording medium for recording and/or reproducing various information for the optical recording medium, in which the output power ratio of the light source may be reduced for recording and reproduction, for optical recording media of different sorts, or for respective recording surfaces of a multilayered optical recording medium, so that optimum characteristics may be realized even with use of an easy-to-fabricate light source or a light source with a smaller light output rating. The intensity of a light beam emitted on an optical recording medium 102 by an optical head 104 is controlled by optical coupling efficiency varying elements 214, 215 depending on the sort of the optical recording medium 102, recording surfaces of a multi-layered optical recording medium, recording surfaces in the multi-layered optical recording medium or on the operating modes, in such a manner that the intensity of the light beam emitted on the optical recording medium 102 may be significantly varied without drastically increasing the output power ratio on the side light source 212.
摘要:
For superior wear resistance to conventional TiN hard films and TiAlN hard films, a hard film contains (Zr1-a, Hfa) (C1-xNx), wherein “a” and “x” are the atomic ratios of Hf and N, respectively, and satisfy the following conditions: 0.05≦a≦0.4 and 0≦x≦1. Another hard film contains (Zr1-a-b, Hfa, Mb) (C1-xNx), wherein M is at least one of W and Mo; and “a”, “b”, and “x” are the atomic ratios of Hf, M, and N, respectively, and satisfy the following conditions: 0≦1-a-b, 0≦a, 0.03≦b≦0.35, and 0≦x≦1.
摘要翻译:为了对常规的TiN硬膜和TiAlN硬质膜具有优异的耐磨性,硬膜含有(Zr 1-a,Hf a a)(C 1-x < 其中“a”和“x”分别是Hf和N的原子比,并且满足以下条件:0.05 <= a <= 0.4和0 <= x <= 1。 另一个硬膜含有(Zr 1-a-a,H b,M b)(C 1-x N) 其中M是W和Mo中的至少一个; 和“a”,“b”和“x”分别为Hf,M和N的原子比,满足下列条件:0 <= 1-ab,0 <= a,0.03 <= b < = 0.35,0 <= x <= 1。
摘要:
A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF6 gas, or fluorocarbon gas, O2 gas and fluorosilicon gas, such as SiF4 gas is supplied into the processing vessel. RF power of 40 MHz or above is applied to the mixed etching gas to generate a plasma. The Si wafer is etched with radicals and ions contained in the plasma.
摘要:
According to the present invention, sufficient light trapping effect can be exhibited and series resistance can be kept small, by sequentially forming a silicon based low refractive index layer and a thin silicon based interface layer on a backside of a photoelectric conversion layer observed from a light incident side, and as a result a silicon based thin film solar cell may be provided efficiently and at low cost.
摘要:
A rare earth permanent magnet material is based on an R—Fe—Co—B—Al—Cu system wherein R is at least one element selected from Nd, Pr, Dy, Tb, and Ho, 15 to 33% by weight of Nd being contained. At least two compounds selected from M-B, M-B—Cu and M-C compounds (wherein M is Ti, Zr or Hf) and an R oxide have precipitated within the alloy structure as grains having an average grain size of up to 5 μm which are uniformly distributed in the alloy structure at intervals of up to 50 μm.
摘要:
An after-air nozzle capable of reducing NOx and CO and a boiler equipped with such a nozzle are provided The after-air nozzle has a vena contracta such that an outside diameter of a flow passage diminishes towards the air-jetting port which supplies air to a boiler, and a changing apparatus changes a flow passage cross-sectional area the vena contracta. A method of use of such an after-air nozzle and a boiler so equipped is also provided.
摘要:
A paper treating agent comprising 100 parts by mass of organopolysiloxane (A), from 100 to 100,000 parts by mass of water (E), and 0.1 to 100 parts by mass of a surfactant (F), characterized in that the agent further comprises 50 to 1,000 parts by mass of a cellulosic resin (C), wherein 0.5 to 2.5 hydroxyl groups per glucose unit of said cellulosic resin are etherized or esterified, and a viscosity of an aqueous 2% solution of said cellulosic resin is from 2 to 100 mpa.s.
摘要:
A security system including several camera devices and a communication device in sites at which monitoring is required by a user. The several camera devices may constantly monitor the sites. The camera devices have motion detecting functions and provide unusual status reporting signals and necessary image information to the communications device when the movements of an intruder have been detected. The communication device communicates with and is connected to a server that serves as an information center via the internet line when unusual status signals have been received. The information from the camera devices is also sent to server. The server automatically notifies the user by a predetermined user-selected method. The notified user can access the server and confirm the information.
摘要:
A semiconductor integrated circuit has a first clock distributing circuit and a second clock distributing circuit. The first clock distributing circuit is configured for distributing a first clock within a first region in a semiconductor chip. The second clock distributing circuit is configured for distributing a second clock within a second region in the semiconductor chip. The second region is located within the first region.