公开(公告)号：US20050130438A1

公开(公告)日：2005-06-16

申请号：US10736444

申请日：2003-12-15

申请人： Antonio Rotondaro ,  Luigi Colombo

发明人： Antonio Rotondaro ,  Luigi Colombo

IPC分类号： H01L21/3115 ,  H01L21/314 ,  H01L21/318 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/823864 ,  H01L21/3115 ,  H01L21/3141 ,  H01L21/3143 ,  H01L21/3185

摘要： Fabricating a semiconductor structure includes establishing a non-stoichiometry associated with a dielectric layer, where the degree of non-stoichiometry corresponds to a nitrogen profile of the dielectric layer. Deposition of the dielectric layer outwardly from a substrate is controlled to substantially yield the established non-stoichiometry of the dielectric layer. Nitrogen is incorporated into the dielectric layer to substantially yield the nitrogen profile without nitridation of the interface.

摘要翻译： 制造半导体结构包括建立与电介质层相关的非化学计量，其中非化学计量的程度对应于电介质层的氮分布。 电介质层从衬底向外沉积被控制以基本上产生介电层的已建立的非化学计量。 将氮气结合到电介质层中以基本上产生氮分布，而不会使界面氮化。

公开(公告)号：US20050079696A1

公开(公告)日：2005-04-14

申请号：US10686011

申请日：2003-10-14

申请人： Luigi Colombo

发明人： Luigi Colombo

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/4763 ,  H01L21/8234 ,  H01L21/8242 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L29/6656 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

摘要： Transistor gate structures, encapsulation structures, and fabrication techniques are provided, in which sidewalls of patterned gate structures are conditioned by nitriding the sidewalls of the gate structure, and a silicon nitride encapsulation layer is formed to protect the conditioned sidewalls during manufacturing processing. The conditioning and encapsulation avoid oxidation of gate stack layers, particularly metal gate layers, and also facilitate repairing or restoring stoichiometry of metal and other gate layers that may be damaged or altered during gate patterning.

公开(公告)号：US20050004011A1

公开(公告)日：2005-01-06

申请号：US10713924

申请日：2003-11-14

申请人： Marco Cavaleri ,  Luigi Colombo ,  Timothy Henkel ,  Daniela Jabes ,  Adriano Malabarba ,  Giorgio Mosconi ,  Martin Stogniew ,  Richard White

发明人： Marco Cavaleri ,  Luigi Colombo ,  Timothy Henkel ,  Daniela Jabes ,  Adriano Malabarba ,  Giorgio Mosconi ,  Martin Stogniew ,  Richard White

IPC分类号： A61K31/70 ,  A61K31/704 ,  A61K38/12 ,  A61K38/14 ,  A61P31/04 ,  A61K38/16 ,  C07K14/765

CPC分类号： A61K38/14 ,  A61K31/70 ,  A61K31/704 ,  A61K38/00 ,  A61K2300/00

摘要： The invention provides methods and compositions for treatment of bacterial infections. Methods of the invention include administration of dalbavancin for treatment of a bacterial infection, in particular a Gram-positive bacterial infection of skin and soft tissue, under conditions where a protein-dalbavancin complex forms, or administering a protein-dalbavancin complex. Dosing regimes include once weekly administration of dalbavancin, which often remains at therapeutic levels in the bloodstream for at least one week, providing prolonged therapeutic action against a bacterial infection.

摘要翻译： 本发明提供了用于治疗细菌感染的方法和组合物。 本发明的方法包括在形成蛋白质 - 达巴万星复合物的条件下，给予达巴万星治疗细菌感染，特别是皮肤和软组织的革兰氏阳性细菌感染，或施用蛋白质 - 达巴万星复合物。 给药方案包括每周一次给予达巴万星，达巴万星通常在血液中保持治疗水平至少一周，为细菌感染提供长时间的治疗作用。

公开(公告)号：US06821873B2

公开(公告)日：2004-11-23

申请号：US10185326

申请日：2002-06-28

申请人： Mark R. Visokay ,  Luigi Colombo ,  Antonio L. P. Rotondaro

发明人： Mark R. Visokay ,  Luigi Colombo ,  Antonio L. P. Rotondaro

IPC分类号： H01L213105

CPC分类号： H01L21/02323 ,  H01L21/02142 ,  H01L21/02175 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31691 ,  H01L21/324 ,  H01L29/517 ,  H01L29/518

摘要： A method for improving high-&kgr; gate dielectric film (104) properties. The high-&kgr; film (104) is subjected to a two step anneal sequence. The first anneal is a high temperature anneal in a non-oxidizing ambient (106) such as N2 to densify the high-&kgr; film (104). The second anneal is a lower temperature anneal in an oxidizing ambient (108) to perform a mild oxidation that heals the high-&kgr; film and reduces interface defects.

摘要翻译： 一种改善高卡门电介质膜（104）性能的方法。 对高卡帕膜（104）进行两步退火处理。 第一退火是在非氧化性环境（106）如N 2中的高温退火以致密化高卡帕膜（104）。 第二退火是在氧化环境（108）中的较低温度退火，以进行温和氧化，以愈合高κ薄膜并减少界面缺陷。

公开(公告)号：US06635498B2

公开(公告)日：2003-10-21

申请号：US10222718

申请日：2002-08-16

申请人： Scott R. Summerfelt ,  Guoqiang Xing ,  Luigi Colombo ,  Sanjeev Aggarwal ,  Theodore S. Moise, IV

发明人： Scott R. Summerfelt ,  Guoqiang Xing ,  Luigi Colombo ,  Sanjeev Aggarwal ,  Theodore S. Moise, IV

IPC分类号： H01L2100

CPC分类号： H01L27/11502 ,  H01L21/31122 ,  H01L21/32136 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

摘要： A method of fabricating a ferroelectric capacitor is disclosed. The method comprises the patterning of a top electrode layer and a dielectric layer to form a capacitor stack structure having sidewalls associated therewith. Prior to patterning the bottom electrode layer, a protective film is formed on the sidewalls of the capacitor stack structure in order to protect the dielectric material from conductive contaminants associated with a subsequent patterning of the bottom electrode layer.

摘要翻译： 公开了一种制造铁电电容器的方法。 该方法包括图案化顶部电极层和电介质层以形成具有与其相关联的侧壁的电容器堆叠结构。 在图形化底部电极层之前，在电容器堆叠结构的侧壁上形成保护膜，以保护电介质材料免受与随后的底部电极层的图案化有关的导电污染物的影响。

公开(公告)号：US06548343B1

公开(公告)日：2003-04-15

申请号：US09702985

申请日：2000-10-31

申请人： Scott R. Summerfelt ,  Theodore S. Moise ,  Guoqiang Xing ,  Luigi Colombo ,  Tomoyuki Sakoda ,  Stephen R. Gilbert ,  Alvin L. S. Loke ,  Shawming Ma ,  Rahim Kavari ,  Laura Wills-Mirkarimi ,  Jun Amano

发明人： Scott R. Summerfelt ,  Theodore S. Moise ,  Guoqiang Xing ,  Luigi Colombo ,  Tomoyuki Sakoda ,  Stephen R. Gilbert ,  Alvin L. S. Loke ,  Shawming Ma ,  Rahim Kavari ,  Laura Wills-Mirkarimi ,  Jun Amano

IPC分类号： H01L218242

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57

摘要： An embodiment of the instant invention is a method of fabricating a ferroelectric capacitor which is situated over a structure, the method comprising the steps of: forming a bottom electrode on the structure (124 of FIG. 1), the bottom electrode having a top surface and sides; forming a capacitor dielectric (126 of FIG. 1) comprised of a ferroelectric material on the bottom electrode, the capacitor dielectric having a top surface and sides; forming a top electrode (128 and 130 of FIG. 1) on the capacitor dielectric, the top electrode having a top surface and sides, the ferroelectric capacitor is comprised of the bottom electrode, the capacitor dielectric, and the top electrode; forming a barrier layer (118 and 120 of FIG. 1) on the side of the bottom electrode, the side of the capacitor dielectric, and the side of the top electrode; forming a dielectric layer on the barrier layer and the structure, the dielectric having a top surface and a bottom surface; and performing a thermal step for a duration at a temperature between 400 and 900 C. in an ambient comprised of a gas selected from the group consisting of: argon, nitrogen, and a combination thereof, the step of performing a thermal step being performed after the step of forming the barrier layer.

摘要翻译： 本发明的一个实施例是制造位于结构上方的铁电电容器的方法，所述方法包括以下步骤：在所述结构（图1的124）上形成底电极，所述底电极具有顶表面 和边; 在底部电极上形成由铁电材料构成的电容器电介质（图1的126），电容器电介质具有顶表面和侧面; 在电容器电介质上形成顶电极（图1的128和130），顶电极具有顶表面和侧面，铁电电容器由底电极，电容器电介质和顶电极组成; 在底电极侧，电容器电介质侧和顶电极侧形成阻挡层（图1的118和120）; 在所述阻挡层和所述结构上形成电介质层，所述电介质具有顶表面和底表面; 并且在由选自氩，氮及其组合的气体组成的环境中在400-900℃的温度下进行热步骤，所述环境包括：在步骤 形成阻挡层的步骤。

公开(公告)号：US4025611A

公开(公告)日：1977-05-24

申请号：US552604

申请日：1975-02-24

申请人： Franco Montino ,  Luigi Colombo ,  Giuseppe Sironi

发明人： Franco Montino ,  Luigi Colombo ,  Giuseppe Sironi

IPC分类号： C01G49/08 ,  H01F1/11 ,  C01G49/02

CPC分类号： B82Y30/00 ,  C01G49/08 ,  C01P2002/54 ,  C01P2004/38 ,  C01P2004/62 ,  C01P2004/64

摘要： A process is disclosed for producing magnetite having an equiaxial morphology in the state of a hyperfine powder, starting from a solution of a bivalent iron solution, characterized in that:A. an aqueous suspension of Fe(OH).sub.2 is prepared by reacting an aqueous solution of a ferrous salt with alkali;B. said aqueous suspension of Fe(OH).sub.2 is fed into an autoclave into which is also introduced a quantity of air corresponding to 4-15 normal liters per 100 g of bivalent Fe; andC. the autoclave is then brought to a temperature between 150.degree. and 200.degree. C and maintained at this temperature until the inside pressure has stabilized itself at a constant level, thereby bringing about the formation of the desired magnetite which, once discharged from the autoclave, is washed and dried. The aqueous suspension of Fe(OH).sub.2 subjected to thermal decomposition in the autoclave may have present therein Cu.sup.+.sup.+ion, in a quantity between 0.3 and 1.4% by weight of the bivalent Fe. When Cu.sup.+.sup.+ is present in the aqueous suspension of Fe(OH).sub.2 which is subjected to the thermal decomposition, it is also desirable to have dissolved therein Na.sub.2 S in such a quantity as to provide from 20 to 60 mg of S per 100 g of bivalent Fe.

摘要翻译： 公开了一种从二价铁溶液溶液开始制造具有超细粉末状态的等轴形态的磁铁矿的方法，其特征在于：

公开(公告)号：US08789705B2

公开(公告)日：2014-07-29

申请号：US12967637

申请日：2010-12-14

申请人： James Cooper Wainerdi ,  Robert Reid Doering ,  Luigi Colombo

发明人： James Cooper Wainerdi ,  Robert Reid Doering ,  Luigi Colombo

IPC分类号： B03C1/30

CPC分类号： C01B31/0266 ,  B03C1/005 ,  B03C1/0335 ,  B03C1/035 ,  B03C2201/20 ,  B03C2201/22 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/172 ,  C01B2202/02 ,  C01B2202/22 ,  Y10S977/751 ,  Y10S977/845

摘要： A process of sorting metallic single wall carbon nanotubes (SWNTs) from semiconducting types by disposing the SWNTs in a dilute fluid, exposing the SWNTs to a dipole-inducing magnetic field which induces magnetic dipoles in the SWNTs so that a strength of a dipole depends on a conductivity of the SWNT containing the dipole, orienting the metallic SWNTs, and exposing the SWNTs to a magnetic field with a spatial gradient so that the oriented metallic SWNTs drift in the magnetic field gradient and thereby becomes spatially separated from the semiconducting SWNTs. An apparatus for the process of sorting SWNTs is disclosed.

摘要翻译： 通过将SWNTs置于稀释流体中来分离来自半导体类型的金属单壁碳纳米管（SWNT）的过程，将SWNT暴露于偶极诱导磁场，其诱导SWNT中的磁偶极子，使得偶极子的强度取决于 包含偶极子的SWNT的导电性，定向金属SWNT，并将SWNT暴露于具有空间梯度的磁场，使得定向金属SWNT在磁场梯度中漂移，从而与半导体SWNT空间分离。 公开了一种用于排序SWNT的过程的设备。

公开(公告)号：US20130234313A1

公开(公告)日：2013-09-12

申请号：US13414902

申请日：2012-03-08

申请人： James Cooper Wainerdi ,  Luigi Colombo ,  John Paul Tellkamp ,  Robert Reid Doering

发明人： James Cooper Wainerdi ,  Luigi Colombo ,  John Paul Tellkamp ,  Robert Reid Doering

IPC分类号： H01L23/34 ,  H01L23/48 ,  H01L21/78 ,  H01L21/56 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01L23/373 ,  B82Y10/00 ,  C09J163/00 ,  H01L21/563 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49541 ,  H01L23/49568 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/29076 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/29193 ,  H01L2224/2929 ,  H01L2224/2939 ,  H01L2224/32245 ,  H01L2224/331 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83104 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83141 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83862 ,  H01L2224/83897 ,  H01L2224/83951 ,  H01L2224/83986 ,  H01L2224/858 ,  H01L2224/85801 ,  H01L2224/8585 ,  H01L2224/85899 ,  H01L2224/9205 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15724 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/014

摘要： An article of manufacture includes a semiconductor die (110) having an integrated circuit (105) on a first side of the die (110), a diffusion barrier (125) on a second side of the die (110) opposite the first side, a mat of carbon nanotubes (112) rooted to the diffusion barrier (125), a die attach adhesive (115) forming an integral mass with the mat (112) of the carbon nanotubes, and a die pad (120) adhering to the die attach adhesive and (115) and the mat (112) of carbon nanotubes for at least some thermal transfer between the die (110) and the die pad (120) via the carbon nanotubes (112). Other articles, integrated circuit devices, structures, and processes of manufacture, and assembly processes are also disclosed.

摘要翻译： 一种制造方法包括在管芯（110）的第一侧上具有集成电路（105）的半导体管芯（110），在与第一侧相对的管芯（110）的第二侧上的扩散阻挡层（125） 基于所述扩散阻挡层（125）的碳纳米管（112）垫，与所述碳纳米管的所述垫（112）形成整体的芯片附接粘合剂（115）和粘附到所述模具 附着粘合剂和（115）和碳纳米管的垫（112），以经由碳纳米管（112）在管芯（110）和管芯焊盘（120）之间进行至少一些热转移。 还公开了其它制品，集成电路器件，结构以及制造工艺和组装工艺。

公开(公告)号：US08198184B2

公开(公告)日：2012-06-12

申请号：US12570620

申请日：2009-09-30

申请人： James Joseph Chambers ,  Hiroaki Niimi ,  Luigi Colombo

发明人： James Joseph Chambers ,  Hiroaki Niimi ,  Luigi Colombo

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/314

CPC分类号： H01L21/28202 ,  H01L21/3145 ,  H01L21/3185 ,  H01L29/4916 ,  H01L29/518 ,  H01L29/7833

摘要： An integrated circuit having a gate dielectric layer (414, 614, 814) having an improved nitrogen profile and a method of fabrication. The gate dielectric layer is a graded layer with a significantly higher nitrogen concentration at the electrode surface than near the substrate surface. An amorphous silicon layer (406) may be deposited prior to nitridation to retain the nitrogen concentration at the top surface (416). Alternatively, a thin silicon nitride layer (610) may be deposited after anneal or a wet nitridation process may be performed.

摘要翻译： 一种具有具有改进的氮分布的栅介电层（414,614,814）和一种制造方法的集成电路。 栅极电介质层是在电极表面处的氮浓度显着高于衬底表面附近的梯度层。 可以在氮化之前沉积非晶硅层（406）以将氮浓度保持在顶表面（416）。 或者，可以在退火之后沉积薄氮化硅层（610），或者可以执行湿式氮化处理。