公开(公告)号：US07435295B2

公开(公告)日：2008-10-14

申请号：US10598095

申请日：2005-02-18

申请人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Yasuhito Takahashi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Yasuhito Takahashi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B25/12

CPC分类号： C30B29/406 ,  C30B9/10 ,  C30B19/02 ,  C30B19/063 ,  C30B19/064 ,  Y10T117/1016

摘要： The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal is grown while stirring a material solution to create a flow from a gas-liquid interface in contact with a source gas toward the inside of the material solution. With this stirring, the source gas can be dissolved easily in the material solution, and supersaturation can be achieved in a short time, thus improving the growth rate of the compound single crystal. Moreover, the flow formed by the stirring goes from the gas-liquid interface where a source gas concentration is high to the inside of the material solution where the source gas concentration is low, so that dissolution of the source gas becomes uniform. Accordingly, it is possible not only to suppress nonuniform nucleation at the gas-liquid interface, but also to improve the quality of the compound single crystal produced.

摘要翻译： 本发明提供了一种能够在短时间内提高生长速度和生长具有高结晶均匀性的大单晶的化合物单晶的制造方法和用于该方法的制造装置。 在搅拌材料溶液的同时培养复合单晶以产生与源气体接触的气液界面朝向材料溶液内部的流动。 通过该搅拌，能够将源气体容易地溶解在原料溶液中，可以在短时间内实现过饱和，从而提高复合单晶的生长速度。 此外，通过搅拌形成的流动源于源气体浓度高的气液界面到源气体浓度低的材料溶液的内部，使得源气体的溶解变得均匀。 因此，不仅可以抑制气液界面的不均匀成核，而且可以提高制造的复合单晶的质量。

公开(公告)号：US07288152B2

公开(公告)日：2007-10-30

申请号：US10884386

申请日：2004-07-02

申请人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Masanori Morishita

发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Masanori Morishita

IPC分类号： C30B11/14

CPC分类号： H01L33/32 ,  H01L29/2003 ,  H01L29/66856

摘要： The present invention provides a manufacturing method in which high quality GaN crystals and GaN crystal substrates can be manufactured under mild conditions of low pressure and low temperature. In a method of manufacturing GaN crystals in which in a gas atmosphere containing nitrogen, gallium and the nitrogen are allowed to react with each other to generate GaN crystals in a mixed melt of the gallium and sodium, the gallium and the nitrogen are allowed to react with each other under a pressurizing condition that exceeds atmospheric pressure, and pressure P1 (atm(×1.013×105 Pa)) of the pressurizing condition is set so as to satisfy the condition that is expressed by the following conditional expression (I): P≦P1

摘要翻译： 本发明提供了一种制造方法，其中可以在低压和低温的温和条件下制造高质量的GaN晶体和GaN晶体衬底。 在制造GaN晶体的方法中，其中在含有氮气的气体气氛中，允许镓和氮彼此反应以在镓和钠的混合熔体中产生GaN晶体，使镓和氮反应 在超过大气压的加压条件下彼此相对地设定加压条件的压力P 1（atm（x1.013×10 Pa）），以满足由 （I）：<？in-line-formula description =“In-line formula”end =“lead”？> P <= P 1 <（P + 45），（I） 公式描述=“在线公式”end =“tail”？>其中在表达式（I）中，P（atm（x1.013×10 Pa））表示最小压力， 在混合熔体的温度T℃下产生GaN晶体。

公开(公告)号：US20070215035A1

公开(公告)日：2007-09-20

申请号：US10598095

申请日：2005-02-18

申请人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Yasuhito Takahashi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kwamura

发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Yasuhito Takahashi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kwamura

IPC分类号： C30B25/00

CPC分类号： C30B29/406 ,  C30B9/10 ,  C30B19/02 ,  C30B19/063 ,  C30B19/064 ,  Y10T117/1016

摘要： The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal is grown while stirring a material solution to create a flow from a gas-liquid interface in contact with a source gas toward the inside of the material solution. With this stirring, the source gas can be dissolved easily in the material solution, and supersaturation can be achieved in a short time, thus improving the growth rate of the compound single crystal. Moreover, the flow formed by the stirring goes from the gas-liquid interface where a source gas concentration is high to the inside of the material solution where the source gas concentration is low, so that dissolution of the source gas becomes uniform. Accordingly, it is possible not only to suppress nonuniform nucleation at the gas-liquid interface, but also to improve the quality of the compound single crystal produced.

摘要翻译： 本发明提供了一种能够在短时间内提高生长速度和生长具有高结晶均匀性的大单晶的化合物单晶的制造方法和用于该方法的制造装置。 在搅拌材料溶液的同时培养复合单晶以产生与源气体接触的气液界面朝向材料溶液内部的流动。 通过该搅拌，能够将源气体容易地溶解在原料溶液中，可以在短时间内实现过饱和，从而提高复合单晶的生长速度。 此外，通过搅拌形成的流动源于源气体浓度高的气液界面到源气体浓度低的材料溶液的内部，使得源气体的溶解变得均匀。 因此，不仅可以抑制气液界面的不均匀成核，而且可以提高制造的复合单晶的质量。

公开(公告)号：US20070196942A1

公开(公告)日：2007-08-23

申请号：US10584725

申请日：2004-12-22

申请人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L21/00

CPC分类号： C30B9/00 ,  C30B9/10 ,  C30B25/02 ,  C30B29/40 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02625

摘要： In a nitrogen-containing atmosphere, a Group III nitride crystal is grown in a flux that includes at least one Group III element selected from Ga, Al, and In, an alkali metal, and Mg, thereby forming a Group III nitride substrate. Since Mg is a p-type dopant for the Group III nitride crystal, even if Mg is present in the crystal, the crystal can have p-type or semi-insulating electrical characteristics and causes no problem in its application to an electronic device. Moreover, the amount of nitrogen dissolved in the flux is increased because the flux includes Mg, which allows the crystal to be grown at a high growth rate and also improves the reproducibility of the crystal growth.

摘要翻译： 在含氮气氛中，在包含选自Ga，Al，In中的至少一种III族元素，碱金属和Mg的助熔剂中生长III族氮化物晶体，从而形成III族氮化物衬底。 由于Mg是III族氮化物晶体的p型掺杂剂，所以即使在晶体中存在Mg，晶体也可以具有p型或半绝缘性的电气特性，在电子器件的应用中也没有问题。 此外，溶解在助熔剂中的氮的量增加，因为助熔剂包括Mg，这允许晶体以高生长速率生长并且还提高晶体生长的再现性。

公开(公告)号：US20070101931A1

公开(公告)日：2007-05-10

申请号：US11590930

申请日：2006-11-01

申请人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

发明人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B25/00 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.

摘要翻译： 本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。 待生长半导体晶体的基板的至少一部分由助熔剂材料形成。 半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。 或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。 助熔剂材料由硅形成。 或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

公开(公告)号：US07198738B2

公开(公告)日：2007-04-03

申请号：US11315134

申请日：2005-12-23

申请人： Takatomo Sasaki ,  Akio Hiraki ,  Yusuke Mori ,  Sadao Nakai

发明人： Takatomo Sasaki ,  Akio Hiraki ,  Yusuke Mori ,  Sadao Nakai

IPC分类号： C01B35/10 ,  G02B5/20 ,  C30B15/00 ,  C30B29/16

CPC分类号： C30B29/22 ,  C30B15/00 ,  C30B17/00 ,  C30B29/10 ,  G02F1/353 ,  G02F1/3551 ,  G02F1/3553 ,  G02F1/37 ,  G02F2201/16

摘要： The present invention provides a cesium-lithium-borate crystal, which can be used as a high-performance wavelength converting crystal, having a chemical composition expressed as CsLiB6O10, and substituted cesium-lithium-borate crystals expressed by the following formula: Cs1−xLi1−yMx+yB6O10 or Cs2(1−z)Li2LzB12O20 (where, M is an alkali metal element, and L is an alkali earth metal element); a method for manufacturing same by heating and melting; and an optical apparatus using such crystals.

摘要翻译： 本发明提供一种可用作具有以CsLiB6O10表示的化学组成的高性能波长转换晶体的铯 - 硼酸锂晶体，以及由下列形式表示的取代的铯 - 锂 - 硼酸盐晶体

公开(公告)号：US07125801B2

公开(公告)日：2006-10-24

申请号：US10911939

申请日：2004-08-04

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Takatomo Sasaki ,  Fumio Kawamura

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Takatomo Sasaki ,  Fumio Kawamura

IPC分类号： H01L21/302

CPC分类号： H01L21/30612 ,  C30B19/02 ,  C30B29/40 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/30625

摘要： The present invention provides a Group III nitride crystal substrate whose surface has concavities and convexities reduced in size. The surfaces with concavities and convexities, such as hillocks, pits and facets, of Group III nitride crystals are brought into contact with a melt and thereby the surfaces are subjected to meltback etching or mechanochemical polishing. The melt includes at least one of alkali metal and alkaline-earth metal. Thus a Group III nitride crystal substrate that has reduced strain and a reduced number of defects, which are caused through the processing, and is excellent in surface flatness is manufactured. Furthermore, by the use of the Group III nitride crystal substrate of the present invention, for instance, semiconductor devices of high performance can be obtained.

摘要翻译： 本发明提供一种III型氮化物晶体基板，其表面的尺寸和凹凸减小。 将III族氮化物晶体的具有凹凸和凹凸的表面，例如小丘，凹坑和小面与熔体接触，从而对表面进行回熔蚀刻或机械化学抛光。 熔体包括碱金属和碱土金属中的至少一种。 因此，制造了通过加工而产生的应力减小和缺陷数量减少，表面平坦性优异的III族氮化物晶体基板。 此外，通过使用本发明的III族氮化物晶体基板，例如可以获得高性能的半导体器件。

公开(公告)号：US07029528B2

公开(公告)日：2006-04-18

申请号：US10469987

申请日：2002-03-15

申请人： Hideomi Koinuma ,  Yuji Matsumoto ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

发明人： Hideomi Koinuma ,  Yuji Matsumoto ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC分类号： C30B29/22

CPC分类号： G02F1/37 ,  C30B29/22 ,  C30B33/10 ,  G02F1/3551 ,  G02F2001/3509

摘要： There are provided a method of superflattening an oxide crystal that is soluble neither with acid nor with alkaline, a method of making a ReCa4O(BO3)3 family oxide single crystal thin film using the superflattening method, a ReCa4O(BO3)3 family oxide single crystal thin film having a SHG property, a superflattening method for light incident/emitting surfaces, and a defect assessing method for oxide crystals. The surface of an oxide crystal that is soluble neither with acid nor with alkaline is reduced with a reducing agent, the reduced oxide crystal surface is dissolved with an aqueous solution of acid or alkaline, the surface dissolved oxide crystal is heat-treated in the atmosphere, whereby the surface of an oxide crystal that is soluble neither with acid nor with alkaline is superflattened to an atomic level. According to this method, a chemically stable oxide which because of its complexity in both composition and structure is soluble neither with acid nor with alkaline and is insoluble even with a fluoric acid is allowed by reduction to be converted into a simpler oxide conventionally soluble with hydrochloric, nitric or sulfuric acid; hence a surface of its crystal is rendered capable of dissolving. Then, heat-treating the dissolved surface in the atmosphere at a suitable temperature for a suitable time period allows surface atoms to be rearranged and the surface to be superflattened to an atomic level. The present invention is applicable to the technical fields that require ultraviolet laser light, especially as core technologies of optical devices applied to optical information processing, optical communication or the like.

摘要翻译： 提供了一种对既不具有酸也不与碱性溶解的氧化物晶体进行超平坦化的方法，制备ReCa 4 O（BO 3 3）3的方法 使用超平坦化方法的ReCa 4 O 3（3-3）3族氧化物单晶薄膜 具有SHG特性的膜，用于光入射/发射表面的超平面方法，以及氧化物晶体的缺陷评估方法。 用还原剂还原不溶于酸和碱的氧化物晶体的表面，还原的氧化物晶体表面用酸或碱的水溶液溶解，表面溶解的氧化物晶体在大气中进行热处理 由此，不仅酸和碱也不溶解的氧化物晶体的表面被超级原子化。 根据该方法，化学稳定的氧化物由于其组成和结构的复杂性既不溶于酸也不溶于碱，并且即使用氟酸也不溶于还原，可以转化为常规可溶于盐酸的简单氧化物 ，硝酸或硫酸; 因此其晶体的表面能够溶解。 然后，在合适的温度下对溶解在大气中的表面进行适当的时间周期处理，使得表面原子被重新排列并将表面超平坦化到原子水平。 本发明适用于需要紫外线激光的技术领域，特别是作为光学信息处理，光通信等的光学装置的核心技术。

公开(公告)号：US20060051942A1

公开(公告)日：2006-03-09

申请号：US10522488

申请日：2003-06-30

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Kunimichi Omae ,  Tomoya Iwahashi ,  Masanori Morishita

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Kunimichi Omae ,  Tomoya Iwahashi ,  Masanori Morishita

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L31/20

CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B9/12 ,  C30B29/403

摘要： A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one of an alkali metal (except Na) and an alkaline earth metal. The method allows the production, with a good yield, of the single crystal of a group III element nitride which is transparent, is reduced in the density of dislocation, has a bulk form, and is large. In particular, a gallium nitride single crystal produced by the method has high quality and takes a large and transparent bulk form, and thus has a high practical value.

公开(公告)号：US20050254118A1

公开(公告)日：2005-11-17

申请号：US11169668

申请日：2005-06-30

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Zhang-Gui Hu

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Zhang-Gui Hu

IPC分类号： G02F1/355 ,  G02F1/35 ,  H01S3/10

CPC分类号： G02F1/3551

摘要： There is provided a nonlinear optical crystal which is presented by the formula: K2Al2B2O7. This nonlinear optical crystal is a vacuum ultraviolet light generating nonlinear optical crystal which is easy to grow and of high practical use. There are also provided a wavelength conversion method using this crystal, and an element and a wavelength conversion apparatus for use in the method.

摘要翻译： 提供了一种非线性光学晶体，其由下列公式表示：K 2 2 Al 2 B 2 N 2 O 7 。 这种非线性光学晶体是一种容易生长和高实用性的真空紫外线发生非线性光学晶体。 还提供了使用该晶体的波长转换方法以及用于该方法的元件和波长转换装置。