公开(公告)号：US20120220902A1

公开(公告)日：2012-08-30

申请号：US13505565

申请日：2010-11-19

申请人： Hiroaki Hashido ,  Masao Ikeda

发明人： Hiroaki Hashido ,  Masao Ikeda

IPC分类号： A61B5/107

CPC分类号： A61B5/08 ,  A61B5/1076 ,  A61B5/6853 ,  A61B17/12045 ,  A61M25/10181 ,  A61M25/10185 ,  G01B13/10

摘要： An inner diameter measurement instrument (100) includes a first channel (120) and a second channel (140) respectively communicating with a balloon (110), a fluid injection mechanism (130), a fluid lock mechanism (150), and an amount measurement unit (160). The fluid injection mechanism (130) injects an incompressible fluid into the balloon (110) through the first channel (120) or the second channel (140). The fluid lock mechanism (150) closes the first channel (120) or the second channel (140). The amount measurement unit (160) measures the amount of an incompressible measurement fluid additionally injected after the balloon (110), the first channel (120), and the second channel (140) are filled with the fluid and the fluid lock mechanism (150) closes one of the first channel (120) and the second channel (140), by the fluid injection mechanism (130) through the other of the first channel (120) and the second channel (140).

摘要翻译： 内径测量仪器（100）包括分别与球囊（110），流体注射机构（130），流体锁定机构（150）连通的第一通道（120）和第二通道（140） 测量单元（160）。 流体注入机构（130）通过第一通道（120）或第二通道（140）将不可压缩流体注入气囊（110）。 流体锁定机构（150）关闭第一通道（120）或第二通道（140）。 量测量单元（160）测量在气球（110），第一通道（120）和第二通道（140）之后被流体和流体锁定机构（150）填充的另外注入的不可压缩测量流体的量 ）通过流体注入机构（130）通过第一通道（120）和第二通道（140）中的另一个封闭第一通道（120）和第二通道（140）中的一个。

公开(公告)号：US08080434B2

公开(公告)日：2011-12-20

申请号：US12622095

申请日：2009-11-19

申请人： Norihiko Yamaguchi ,  Satoshi Taniguchi ,  Masao Ikeda

发明人： Norihiko Yamaguchi ,  Satoshi Taniguchi ,  Masao Ikeda

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  G01N21/6489

摘要： A nondestructive testing method for an oxide semiconductor layer includes the steps of applying excitation light to an amorphous or polycrystalline target oxide semiconductor layer to be tested and measuring an intensity of photoluminescence in a wavelength region longer than a wavelength corresponding to a bandgap energy among light emitted from the target oxide semiconductor layer; and estimating a film property of the target oxide semiconductor layer on the basis of measurement results.

摘要翻译： 氧化物半导体层的非破坏性测试方法包括以下步骤：向待测试的非晶或多晶目标氧化物半导体层施加激发光，并测量在比发射的光的带隙能量长的波长区域中的光致发光强度 从目标氧化物半导体层; 并基于测量结果估计目标氧化物半导体层的膜性质。

公开(公告)号：US20100312261A1

公开(公告)日：2010-12-09

申请号：US12745458

申请日：2008-12-01

申请人： Yutaka Suzuki ,  Hideaki Matsunami ,  Yukihiko Sakaguchi ,  Masao Ikeda ,  Tomokazu Nakayama ,  Keiji Kamata ,  Ryo Tanaka

发明人： Yutaka Suzuki ,  Hideaki Matsunami ,  Yukihiko Sakaguchi ,  Masao Ikeda ,  Tomokazu Nakayama ,  Keiji Kamata ,  Ryo Tanaka

IPC分类号： A61B17/11

CPC分类号： A61M25/0668 ,  A61B5/1076 ,  A61B5/42 ,  A61B17/3415 ,  A61J15/0007 ,  A61J15/0023 ,  A61J15/0026 ,  A61J15/003 ,  A61J15/0038 ,  A61J15/0065 ,  A61M25/0662 ,  A61M29/00 ,  A61M2025/0008 ,  A61M2025/0681

摘要： The present invention provides a sheath for gastrostoma (1), a sheathed dilator, a gastrostomy catheter kit and a method of splitting a sheath for gastrostoma. The sheath for gastrostoma (1) includes a sheath body (11) in which a gastrostomy catheter (2) is inserted and a handle (12). The sheath for gastrostoma (1) lowers the insertion resistance of a gastrostomy catheter when inserted in a fistula before insertion of the gastrostomy catheter in the fistula for replacement in the patient's body. According to the invention, a sheath for gastrostoma, a sheathed dilator, a sheath for gastrostoma with insertion aid, a gastrostomy catheter kit and a method of splitting a sheath for gastrostoma which can lower the insertion resistance during placement of a catheter in the patient's body, facilitate air supply control of an endoscope and stabilize endoscopic visual field during surgery are provided.

摘要翻译： 本发明提供了胃瘘用鞘（1），护套扩张器，胃造口导管套件以及分割胃瘘用护套的方法。 胃瘘用鞘（1）包括鞘体（11），其中插入有胃造口术导管（2）和手柄（12）。 在将胃造口术导管插入瘘管中以在患者体内更换时，用于胃瘘（1）的护套（1）降低插入瘘管时胃造口术导管的插入阻力。 根据本发明，胃瘘用护套，护套扩张器，带插入辅助器的胃瘘用鞘，胃造口导管套件以及分割胃瘘用护套的方法，能够降低将导管插入患者体内时的插入阻力 提供内窥镜的供气控制，并且在手术期间稳定内窥镜视野。

公开(公告)号：US20100286357A1

公开(公告)日：2010-11-11

申请号：US12097921

申请日：2006-12-20

申请人： Kenichi Matsumura ,  Takashi Shinjo ,  Yoshihiro Inui ,  Kazuhiro Oomori ,  Masao Ikeda

发明人： Kenichi Matsumura ,  Takashi Shinjo ,  Yoshihiro Inui ,  Kazuhiro Oomori ,  Masao Ikeda

IPC分类号： C08G18/12

CPC分类号： G03G9/08755 ,  G03G9/08764 ,  G03G9/08793 ,  G03G9/08795 ,  G03G9/08797

摘要： The present invention aims to provide a resin composition for toners which enables to obtain a toner having excellent low temperature fixability and high temperature offset resistance, and a toner. The resin composition for toners is obtained by reacting a mixture of a branched polyester (A) having a number average molecular weight of 2,000 to 7,000 and a hydroxyl value of 20 to 80, and a low molecular weight linear polyester (B) having a number average molecular weight of 2,000 to 5,000 and a hydroxyl number of 20 to 55, with an isocyanate compound containing two or more isocyanate groups in one molecule, which comprises a crosslinked structure of said branched polyester (A), a structure in which said branched polyester (A) and said low molecular weight linear polyester (B) are bonded by said isocyanate compound, and an unreacted portion of said low molecular weight linear polyester (B).

摘要翻译： 本发明旨在提供一种能够获得具有优异的低温定影性和耐高温抵抗性的调色剂和调色剂的调色剂用树脂组合物。 调色剂用树脂组合物通过使数均分子量为2,000〜7,000的支链聚酯（A）和羟值为20〜80的混合物和数均分子量的线性聚酯（B） 平均分子量为2,000〜5000，羟值为20〜55，在1分子中含有2个以上异氰酸酯基的异氰酸酯化合物，其包含所述支链聚酯（A）的交联结构，所述支链聚酯 （A）和所述低分子线性聚酯（B）通过所述异氰酸酯化合物和所述低分子线性聚酯（B）的未反应部分键合。

公开(公告)号：US20100129942A1

公开(公告)日：2010-05-27

申请号：US12622095

申请日：2009-11-19

申请人： Norihiko Yamaguchi ,  Satoshi Taniguchi ,  Masao Ikeda

发明人： Norihiko Yamaguchi ,  Satoshi Taniguchi ,  Masao Ikeda

IPC分类号： H01L21/66 ,  G01J1/58

CPC分类号： H01L22/12 ,  G01N21/6489

摘要： A nondestructive testing method for an oxide semiconductor layer includes the steps of applying excitation light to an amorphous or polycrystalline target oxide semiconductor layer to be tested and measuring an intensity of photoluminescence in a wavelength region longer than a wavelength corresponding to a bandgap energy among light emitted from the target oxide semiconductor layer; and estimating a film property of the target oxide semiconductor layer on the basis of measurement results.

摘要翻译： 氧化物半导体层的非破坏性测试方法包括以下步骤：向待测试的非晶或多晶目标氧化物半导体层施加激发光，并测量在比发射的光的带隙能量长的波长区域中的光致发光强度 从目标氧化物半导体层; 并基于测量结果估计目标氧化物半导体层的膜性质。

公开(公告)号：US20100020838A1

公开(公告)日：2010-01-28

申请号：US12502564

申请日：2009-07-14

申请人： Makoto Oota ,  Hiroyuki Yokoyama ,  Masaru Kuramoto ,  Masao Ikeda

发明人： Makoto Oota ,  Hiroyuki Yokoyama ,  Masaru Kuramoto ,  Masao Ikeda

IPC分类号： H01S5/00

CPC分类号： H01S5/0658 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0652 ,  H01S5/1064 ,  H01S5/22 ,  H01S5/32341

摘要： A laser diode capable of performing self-pulsation operation, and capable of sufficiently reducing the coherence of laser light and stably obtaining low-noise laser light is provided. A laser diode includes: a laser chip including at least one laser stripe which extends in a resonator length direction between a first end surface and a second end surface opposed to each other, in which the laser stripe includes a gain region and a saturable absorption region in the resonator length direction, and the width of the laser stripe in the saturable absorption region is larger than the width of the laser stripe in the gain region.

摘要翻译： 提供能够进行自脉动操作并且能够充分降低激光的相干性并稳定地获得低噪声激光的激光二极管。 激光二极管包括：激光器芯片，其包括在彼此相对的第一端面和第二端面之间沿谐振器长度方向延伸的至少一个激光条纹，其中激光条纹包括增益区域和可饱和吸收区域 在谐振器长度方向上，可饱和吸收区域中的激光条纹的宽度大于增益区域中激光条纹的宽度。

公开(公告)号：US07561606B2

公开(公告)日：2009-07-14

申请号：US11264538

申请日：2005-10-31

申请人： Manabu Taniguchi ,  Motonobu Takeya ,  Tsuyoshi Fujimoto ,  Masao Ikeda ,  Toshihiro Hashidu

发明人： Manabu Taniguchi ,  Motonobu Takeya ,  Tsuyoshi Fujimoto ,  Masao Ikeda ,  Toshihiro Hashidu

IPC分类号： H01S3/04

CPC分类号： H01S5/2231 ,  B82Y20/00 ,  G11B7/127 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/05644 ,  H01L2224/48091 ,  H01L2224/85444 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01S5/0224 ,  H01S5/02248 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/2214 ,  H01S5/34333 ,  H01L2224/45099 ,  H01L2924/00

摘要： An upper portion of a second clad layer and a contact layer are provided with grooves so as to form a ridge therebetween. An electrode is formed on the ridge. An insulation film is formed to extent on side surfaces of the ridge, on the inside of the grooves, and those portions of the contact layer which are located on the outside of the grooves. The thickness of those portions of the insulation film which are located on the contact layer in the areas on the outside of the grooves is set to be greater than at least the thickness of the electrode. Besides, a pad electrode is formed to cover the electrode and to extend on the insulation film on the upper side of the areas on the outside of the grooves. The upper surfaces of those portions of the pad electrode which are located on the upper side of the areas on the outside of the grooves are set to be above the upper surface of that portion of the pad electrode which is located on the upper side of the ridge.

摘要翻译： 第二覆盖层和接触层的上部设置有沟槽，以在其间形成脊。 在脊上形成电极。 在槽的侧面，槽的内侧和接触层的位于槽的外侧的部分形成绝缘膜。 位于槽的外侧区域中的接触层上的绝缘膜的那些部分的厚度被设定为大于至少电极的厚度。 此外，形成焊盘电极以覆盖电极并且在槽的外侧上的区域的上侧上的绝缘膜上延伸。 位于槽的外侧的区域的上侧的焊盘电极的那些部分的上表面被设定在位于焊盘电极的上侧的焊盘电极的该部分的上表面的上方 岭。

公开(公告)号：US20080108160A1

公开(公告)日：2008-05-08

申请号：US11969088

申请日：2008-01-03

申请人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

发明人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

摘要翻译： 由氮化物III-V化合物半导体制成的半导体发光器件包括由In和Ga等InGaN的第一氮化物III-V化合物半导体构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

公开(公告)号：US07125732B2

公开(公告)日：2006-10-24

申请号：US10930009

申请日：2004-08-30

申请人： Motonobu Takeya ,  Takeharu Asano ,  Masao Ikeda

发明人： Motonobu Takeya ,  Takeharu Asano ,  Masao Ikeda

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01L33/007 ,  H01L33/02 ,  H01L33/04 ,  H01S5/0213 ,  H01S5/2004 ,  H01S5/3216 ,  H01S5/34333

摘要： In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer. The first layer 9 is not thinner than 50 nm. The p-type second layer 12 includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.

公开(公告)号：US06870193B2

公开(公告)日：2005-03-22

申请号：US10349609

申请日：2003-01-23

申请人： Motonobu Takeya ,  Takeharu Asano ,  Masao Ikeda

发明人： Motonobu Takeya ,  Takeharu Asano ,  Masao Ikeda

IPC分类号： H01L33/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L27/15

CPC分类号： B82Y20/00 ,  H01L33/007 ,  H01L33/02 ,  H01L33/04 ,  H01S5/0213 ,  H01S5/2004 ,  H01S5/3216 ,  H01S5/34333

摘要： In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer. The first layer 9 is not thinner than 50 nm. The p-type second layer 12 includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.