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    Sustained release formulation for carbamates and a method therefor
    81.
    发明申请
    Sustained release formulation for carbamates and a method therefor 审中-公开
    氨基甲酸酯的缓释制剂及其制备方法

    公开(公告)号：US20050013869A1

    公开(公告)日：2005-01-20

    申请号：US10622316

    申请日：2003-07-18

    Applicant: Cheng Chaw ,  Yi-Yan Yang ,  Shabbir Moochhala ,  Donna Tan ,  Bin Zhao

    Inventor： Cheng Chaw ,  Yi-Yan Yang ,  Shabbir Moochhala ,  Donna Tan ,  Bin Zhao

    IPC: A61K9/16 ,  A61K9/22 ,  A61K9/50

    CPC classification number: A61K9/1647

    Abstract: The invention provides microparticles for sustained release formulation for physostigmine, pyridostigmine and other therapeutically active carbamates. The microparticles comprise the active compound and a biodegradable polymer such as polyester, poly(phosphate), poly(anhydride), poly(ortho ester), or mixture thereof. In one embodiment, the polymer is poly(d,l-lactide-co-glycolide). The desired release pattern of the active compound may be readily attained by varying the type and amount of the polymer used, including by using a mixture of two polymers, one of which is more hydrophobic. The invention also provides a method of preparing the microparticles and in one embodiment, the microparticles may be prepared by spray drying.

    Abstract translation: 本发明提供用于毒扁豆黄素，吡斯的明和其他治疗活性氨基甲酸酯的持续释放制剂的微粒。 微粒包括活性化合物和可生物降解的聚合物如聚酯，聚（磷酸酯），聚（酸酐），聚（原酸酯）或其混合物。 在一个实施方案中，聚合物是聚（d，l-丙交酯 - 共 - 乙交酯）。 通过改变所用聚合物的类型和量可以容易地获得所需的活性化合物的释放模式，包括通过使用两种聚合物的混合物，其中一种是更疏水的。 本发明还提供了制备微粒的方法，在一个实施方案中，微粒可以通过喷雾干燥制备。

    Method and structure for microfluidic flow guiding
    82.
    发明授权
    Method and structure for microfluidic flow guiding 有权
    微流体导流的方法和结构

    公开(公告)号：US06821485B2

    公开(公告)日：2004-11-23

    申请号：US10071846

    申请日：2002-02-08

    Applicant: David J. Beebe ,  Jeffrey S. Moore ,  Bin Zhao

    Inventor： David J. Beebe ,  Jeffrey S. Moore ,  Bin Zhao

    IPC: B01L302

    CPC classification number: B82Y30/00 ,  B01L3/5027 ,  B01L3/502707 ,  B01L2300/089 ,  B01L2400/0672 ,  Y10T436/11 ,  Y10T436/117497 ,  Y10T436/118339 ,  Y10T436/2575

    Abstract: A flow of liquids is carried out on a microscale utilizing surface effects to guide the liquid on flow paths to maintain laminar flow. No sidewall confining structure is required, minimizing resistance to flow and allowing laminar flow to be maintained at high flow rates. The guiding structure has flow guiding stripes formed on one or both of facing base and cover surfaces which are wettable by a selected liquid to direct the liquid from a source location to a destination location. The regions adjacent to the guiding stripes on the base and cover surfaces are non-wettable. The smooth interface between the gas and liquid along the flowing stream allows gas-liquid reactions to take place as a function of diffusion across the interface without mixing of the gas and liquid. Liquid-liquid flows may also be guided with such structures.

    Abstract translation: 使用表面效应在微尺度上进行液体流动以将液体引导到流动路径上以保持层流。 不需要侧壁约束结构，使流动阻力最小化，并允许层流维持在高流速。 引导结构具有形成在一个或两个相对的基底和盖表面上的流动引导条纹，其可被选定的液体润湿以将液体从源位置引导到目的地位置。 在基部和盖表面上与引导条相邻的区域是不可润湿的。 沿着流动流动的气体和液体之间的平滑界面允许气 - 液反应作为扩散跨越界面而发生，而不会混合气体和液体。 液 - 液流也可以用这种结构引导。

    Structure for bonding pad and method for its fabrication
    83.
    发明授权
    Structure for bonding pad and method for its fabrication 有权
    焊接结构及其制造方法

    公开(公告)号：US06740985B1

    公开(公告)日：2004-05-25

    申请号：US09716350

    申请日：2000-11-20

    Applicant: Bin Zhao

    Inventor： Bin Zhao

    IPC: H01L2348

    CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05556 ,  H01L2224/05647 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01063 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00

    Abstract: A copper bonding pad is directly supported by a copper via pad structure, the copper via pad structure having substantially the same geometry and dimensions as the copper bonding pad. The combination of the copper bonding pad and the copper via pad structure results in an increase in effective thickness of the copper bonding pad. Due to this effective increase in the bonding pad thickness, the bonding pad is more tolerant to the potential dishing problem caused by the CMP process. Additional metal pad structures and via pad structures are used below the bonding pad. The additional metal pad structures and via pad structures comprise alternating segments of interconnect metal and dielectric fillers, and alternating segments of via metal and dielectric fillers, respectively. The alternating segments of interconnect metal and dielectric fillers and the alternating segments of via metal and dielectric fillers prevent or reduce the potential dishing problem that otherwise exists in damascene and CMP processing. The alternating segments of interconnect metal and dielectric fillers and the alternating segments of via metal and dielectric fillers are arranged such that there are a number of columns of solid metal support under the bonding pad. The columns of solid metal support significantly improve the poor mechanical support otherwise provided by the low dielectric constant materials that are presently used in fabrication of modern copper integrated circuits. The columns of solid metal support also improve thermal conductivity of the bonding pad.

    Abstract translation: 铜焊盘由铜通孔焊盘结构直接支撑，铜通孔焊盘结构具有与铜焊盘基本上相同的几何形状和尺寸。 铜焊盘和铜通孔焊盘结构的组合导致铜焊盘的有效厚度的增加。 由于焊盘厚度的这种有效增加，焊盘更能承受由CMP工艺引起的潜在的凹陷问题。 在焊盘下面使用附加的金属焊盘结构和通孔焊盘结构。 附加的金属焊盘结构和通孔焊盘结构分别包括互连金属和介电填料的交替段，以及通孔金属和电介质填料的交替段。 互连金属和电介质填料的交替段和通孔金属和电介质填料的交替段防止或减少在镶嵌和CMP加工中存在的潜在凹陷问题。 互连金属和电介质填料的交替段和通孔金属和电介质填料的交替段布置成使得在接合焊盘下方有许多固体金属支撑柱。 固体金属载体的柱显着地改善了目前用于制造现代铜集成电路的低介电常数材料提供的差的机械支撑。 固体金属载体的柱也提高了焊盘的导热性。

    Apparatus and method for wavelength division multiplexing
    84.
    发明授权
    Apparatus and method for wavelength division multiplexing 失效
    用于波分复用的装置和方法

    公开(公告)号：US06684006B2

    公开(公告)日：2004-01-27

    申请号：US10021472

    申请日：2001-12-07

    Applicant: Bin Zhao

    Inventor： Bin Zhao

    IPC: G02B628

    CPC classification number: G02B6/2938 ,  G02B6/29353 ,  G02B6/29355 ,  G02B6/29386 ,  H04J14/02

    Abstract: A dispersion mitigating interleaver assembly has a first unbalanced Mach-Zehnder interferometer (MZI) assembly which includes first and second output ports and which has first transmission vs. wavelength curve and a first dispersion vs. wavelength curve. The dispersion mitigating interleaver assembly also includes a second unbalanced MZI assembly which has a second transmission vs. wavelength curve and a second dispersion vs. wavelength curve. The second unbalanced MZI assembly receives an output from one of the first and second output ports of the first unbalanced MZI assembly. The second transmission vs. wavelength curve is substantially the same as the first transmission vs. wavelength curve and the second dispersion vs. wavelength curve is substantially opposite with respect to the first dispersion vs. wavelength curve, such that dispersion is substantially cancelled by the cooperation of the first and second unbalanced MZI assemblies.

    Abstract translation: 分散减轻交错器组件具有第一不平衡马赫 - 曾德干涉仪（MZI）组件，其包括第一和第二输出端口，并且具有第一透射与波长曲线以及第一色散与波长曲线。 色散减轻交错器组件还包括第二不平衡MZI组件，其具有第二透射与波长曲线和第二色散相对于波长曲线。 第二不平衡MZI组件从第一不平衡MZI组件的第一和第二输出端口之一接收输出。 第二透射率与波长曲线基本上与第一透射率相对于波长曲线相同，并且第二色散对波长曲线相对于第一色散相对于波长曲线基本相反，使得色散基本上被合作消除 的第一和第二不平衡MZI组件。

    Tandem interleaver
    85.
    发明授权
    Tandem interleaver 失效
    串联交织器

    公开(公告)号：US06639707B2

    公开(公告)日：2003-10-28

    申请号：US10016362

    申请日：2001-11-30

    Applicant: Bin Zhao

    Inventor： Bin Zhao

    IPC: G02F103

    CPC classification number: G02B6/29302 ,  G02B6/272 ,  G02B6/2766 ,  G02B6/2773 ,  G02B6/29386

    Abstract: A low dispersion comb filter or interleaver comprises a first birefringent element assembly having at least one birefringent element and a second birefringent element assembly having at least one other birefringent element. The first birefringent element assembly and the second birefringent element assembly are configured so as to cooperate with one another in a manner which mitigates dispersion of the interleaver. By aligning the polarization directions of the odd channels and the even channels so as to be parallel with respect to one another prior to entering the second birefringent element assembly, zero or nearly zero dispersion is obtained simultaneously for both the odd and even channels.

    Abstract translation: 低色散梳状滤波器或交织器包括具有至少一个双折射元件的第一双折射元件组件和具有至少一个其它双折射元件的第二双折射元件组件。 第一双折射元件组件和第二双折射元件组件被配置为以减轻交错器的色散的方式彼此协作。 通过使奇数通道和偶数通道的偏振方向在进入第二双折射元件组件之前相对彼此平行对准，对奇数和偶数通道同时获得零或接近零的色散。

    Method for fabricating on-chip inductors and related structure
    86.
    发明授权
    Method for fabricating on-chip inductors and related structure 有权
    制造片上电感器及相关结构的方法

    公开(公告)号：US06396122B1

    公开(公告)日：2002-05-28

    申请号：US09658483

    申请日：2000-09-08

    Applicant: David Howard ,  Bin Zhao ,  Q. Z. Liu

    Inventor： David Howard ,  Bin Zhao ,  Q. Z. Liu

    IPC: H01L2900

    CPC classification number: H01L28/10 ,  H01L27/08

    Abstract: According to various disclosed embodiments, a conductor is patterned in a dielectric. The conductor can be patterned, for example, in the shape of a square spiral. The conductor can comprise, for example, copper, aluminum, or copper-aluminum alloy. The dielectric can be, for example, silicon oxide or a low-k dielectric. A spin-on matrix containing high permeability particles is then deposited adjacent to the patterned conductor. The high permeability particles comprise material having a permeability substantially higher than the permeability of the dielectric. The high permeability particles can comprise, for example, nickel, iron, nickel-iron alloy, or magnetic oxide. As a result, an inductor having a high inductance value is achieved without lowering the quality factor of the inductor.

    Abstract translation: 根据各种公开的实施例，导体在电介质中图案化。 导体可以被图案化，例如，呈正方形螺旋形。 导体可以包括例如铜，铝或铜 - 铝合金。 电介质可以是例如氧化硅或低k电介质。 然后将包含高磁导率颗粒的旋涂基体沉积在图案化导体附近。 高磁导率颗粒包括具有比电介质的磁导率显着更高的磁导率的材料。 高磁导率颗粒可以包括例如镍，铁，镍 - 铁合金或磁性氧化物。 结果，实现了具有高电感值的电感器，而不降低电感器的品质因数。

    Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturing
    87.
    发明授权
    Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturing 有权
    与半导体集成电路制造的低介电常数绝缘体互连

    公开(公告)号：US06187672B1

    公开(公告)日：2001-02-13

    申请号：US09158337

    申请日：1998-09-22

    Applicant: Bin Zhao ,  Maureen R. Brongo

    Inventor： Bin Zhao ,  Maureen R. Brongo

    IPC: H01L214763

    CPC classification number: H01L21/76802 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76834

    Abstract: A method is provided for forming an improved interconnect structure on a semiconductor body. A first metal layer is deposited on the semiconductor body. A sacrificial layer having a height is deposited on the first metal layer. The sacrificial layer and the metal layer are patterned to form separate metal lines with the sacrificial layer remaining on said metal lines. A low-k material is then deposited to fill the gaps between metal lines and to cover the sacrificial layer. The low-k material is then removed to a level within the height of the sacrificial layer. The sacrificial layer is then removed. A protective layer is deposited on top of the metal lines and the low-k material. A dielectric layer is deposited over the protective layer. The protective layer protects the low-k material from attack by chemicals utilized by subsequent process steps to etch vias in the dielectric layer, to strip photo-resist, and to clean the vias. The protective layer is then selectively etched away to make contact between a via plug and the metal lines.

    Abstract translation: 提供了一种用于在半导体本体上形成改进的互连结构的方法。 第一金属层沉积在半导体本体上。 具有高度的牺牲层沉积在第一金属层上。 牺牲层和金属层被图案化以形成分离的金属线，牺牲层保留在所述金属线上。 然后沉积低k材料以填充金属线之间的间隙并覆盖牺牲层。 然后将低k材料去除到牺牲层的高度内的水平。 然后去除牺牲层。 保护层沉积在金属线和低k材料的顶部。 介电层沉积在保护层上。 保护层保护低k材料免受后续工艺步骤所用化学品的侵蚀，以蚀刻电介质层中的通孔，剥离光致抗蚀剂和清洁通孔。 然后选择性地蚀刻保护层以使通孔塞和金属线之间的接触。

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