公开(公告)号：US20130009209A1

公开(公告)日：2013-01-10

申请号：US13535506

申请日：2012-06-28

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/7782 ,  H01L29/78603 ,  H01L29/78696

摘要： To provide a transistor including an oxide semiconductor layer and having electric characteristics required depending on an intended use and provide a semiconductor device including the transistor, in a transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating film, and a gate electrode are stacked in this order over an oxide semiconductor insulating film, an oxide semiconductor stack layer which includes at least two oxide semiconductor layers with energy gaps different from each other and a mixed region therebetween is used as the semiconductor layer.

摘要翻译： 为了提供一种包括氧化物半导体层并且具有根据预期用途需要的电特性的晶体管，并且在包括半导体层，源极和漏极电极层，栅极绝缘膜和 栅电极依次堆叠在氧化物半导体绝缘膜上，氧化物半导体堆叠层，其包括具有彼此不同的能隙的至少两个氧化物半导体层以及它们之间的混合区域作为半导体层。

公开(公告)号：US20130001583A1

公开(公告)日：2013-01-03

申请号：US13609906

申请日：2012-09-11

申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

IPC分类号： H01L29/786

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

公开(公告)号：US20130001568A1

公开(公告)日：2013-01-03

申请号：US13609915

申请日：2012-09-11

申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

IPC分类号： H01L29/786

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

摘要翻译： 本发明提供一种具有高操作性能和高可靠性的半导体器件。 在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。 不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。 结果，实现了具有小的截止电流值的TFT结构。 在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

公开(公告)号：US20120319183A1

公开(公告)日：2012-12-20

申请号：US13495313

申请日：2012-06-13

申请人： Shunpei YAMAZAKI ,  Tatsuya HONDA

发明人： Shunpei YAMAZAKI ,  Tatsuya HONDA

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/045 ,  H01L29/24 ,  H01L29/267 ,  H01L29/7782 ,  H01L29/78609 ,  H01L29/78696

摘要： One object of the present invention is to provide a structure of a transistor including an oxide semiconductor in a channel formation region in which the threshold voltage of electric characteristics of the transistor can be positive, which is a so-called normally-off switching element, and a manufacturing method thereof. A second oxide semiconductor layer which has greater electron affinity and a smaller energy gap than a first oxide semiconductor layer is formed over the first oxide semiconductor layer. Further, a third oxide semiconductor layer is formed to cover side surfaces and a top surface of the second oxide semiconductor layer, that is, the third oxide semiconductor layer covers the second oxide semiconductor layer.

摘要翻译： 本发明的一个目的是提供在晶体管的电特性的阈值电压可以为正的沟道形成区域中的包括氧化物半导体的晶体管的结构，其是所谓的常关断开关元件， 及其制造方法。 在第一氧化物半导体层上形成具有比第一氧化物半导体层更大的电子亲和力和更小的能隙的第二氧化物半导体层。 此外，形成第三氧化物半导体层以覆盖第二氧化物半导体层的侧表面和顶表面，即，第三氧化物半导体层覆盖第二氧化物半导体层。

公开(公告)号：US20120319113A1

公开(公告)日：2012-12-20

申请号：US13484740

申请日：2012-05-31

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/78618 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： At least part of the oxide semiconductor layer which serves as the channel formation region is thinned by etching and the thickness of the channel formation region is adjusted by the etching. Further, a dopant containing phosphorus (P) or boron (B) is introduced into a thick region of the oxide semiconductor layer to form a source region and a drain region in the oxide semiconductor layer, so that the contact resistance between the source and drain regions and the channel formation region which are connected to each other is reduced.

摘要翻译： 作为沟道形成区域的氧化物半导体层的至少一部分通过蚀刻变薄，通过蚀刻来调整沟道形成区域的厚度。 此外，将含磷（P）或硼（B）的掺杂剂引入到氧化物半导体层的厚区域中，以在氧化物半导体层中形成源极区域和漏极区域，使得源极和漏极 彼此连接的区域和沟道形成区域减少。

公开(公告)号：US20120319102A1

公开(公告)日：2012-12-20

申请号：US13488879

申请日：2012-06-05

申请人： Shunpei YAMAZAKI ,  Tatsuya HONDA

发明人： Shunpei YAMAZAKI ,  Tatsuya HONDA

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/78609 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14616 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a structure of a transistor which has a channel formation region formed using an oxide semiconductor and a positive threshold voltage value, which enables a so-called normally-on switching element. The transistor includes an oxide semiconductor stack in which at least a first oxide semiconductor layer and a second oxide semiconductor layer with different energy gaps are stacked and a region containing oxygen in excess of its stoichiometric composition ratio is provided.

摘要翻译： 本发明的目的是提供一种晶体管的结构，其具有使用氧化物半导体形成的沟道形成区域和正的阈值电压值，这使得能够形成所谓的常开开关元件。 晶体管包括氧化物半导体堆叠，其中至少第一氧化物半导体层和具有不同能隙的第二氧化物半导体层被堆叠，并且提供含有超过其化学计量组成比的氧的区域。

公开(公告)号：US20120305912A1

公开(公告)日：2012-12-06

申请号：US13570297

申请日：2012-08-09

申请人： Jun KOYAMA ,  Shunpei YAMAZAKI

发明人： Jun KOYAMA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/12

CPC分类号： H01L27/1225 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13452 ,  G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/123 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/023 ,  H01L27/124 ,  H01L27/1285 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor.

摘要翻译： 本发明的一个实施例提供了一种在氧化物半导体中实现高迁移率的高度可靠的显示装置。 第一氧化物组分形成在基底组分上。 晶体生长通过第一次热处理从第一氧化物组分的表面向内部进行，从而形成第一氧化物晶体组分与至少一部分基础组分接触。 在第一氧化物晶体组分上形成第二氧化物组分。 通过使用第一氧化物晶体成分作为种子的第二次热处理进行晶体生长，从而形成第二氧化物晶体成分。 因此，形成堆叠的氧化物材料。 使用层叠的氧化物材料形成具有高迁移率的晶体管，并且使用该晶体管形成驱动电路。

公开(公告)号：US20120299001A1

公开(公告)日：2012-11-29

申请号：US13488926

申请日：2012-06-05

申请人： Shunpei YAMAZAKI ,  Hideaki KUWABARA ,  Yasuyuki ARAI

发明人： Shunpei YAMAZAKI ,  Hideaki KUWABARA ,  Yasuyuki ARAI

IPC分类号： H01L29/786

CPC分类号： H01L27/1222 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2202/103 ,  G02F2202/105 ,  G02F2202/28 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67225 ,  H01L21/67236 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

摘要： [Problem]A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.[Solving Means]By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized,

摘要翻译： [问题]在传统的液晶显示装置中，使用至少五个光掩模制造TFT，因此制造成本高。 [解决方案]通过在三个光刻步骤中使用三个光掩模来执行像素电极127，源极区域123和漏极区域124的形成，制备具有反向交错型n型的像素TFT部分的液晶显示装置 通道TFT和存储电容器，

公开(公告)号：US20120274879A1

公开(公告)日：2012-11-01

申请号：US13542693

申请日：2012-07-06

申请人： Yasuhiro JINBO ,  Masafumi MORISUE ,  Hajime KIMURA ,  Shunpei YAMAZAKI

发明人： Yasuhiro JINBO ,  Masafumi MORISUE ,  Hajime KIMURA ,  Shunpei YAMAZAKI

IPC分类号： G02F1/13357 ,  G09F13/04

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/133603 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/62 ,  H01L51/003 ,  H01L2221/68318 ,  H01L2221/68386

摘要： The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

摘要翻译： 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。 根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射，并且元件层从第一衬底剥离。

公开(公告)号：US20120273779A1

公开(公告)日：2012-11-01

申请号：US13546345

申请日：2012-07-11

申请人： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

发明人： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/016 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/15 ,  H01L27/3225 ,  H01L27/3241 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78618

摘要： In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film.

摘要翻译： 在有源矩阵显示装置中，包括在电路中的薄膜晶体管的电特性是重要的，显示装置的性能取决于电特性。 因此，通过使用包括In，Ga和Zn的氧化物半导体膜用于反向交错薄膜晶体管，可以减小薄膜晶体管的电特性的变化。 通过溅射法连续地形成三层栅极绝缘膜，氧化物半导体层和沟道保护层，而不暴露于空气。 此外，在氧化物半导体层中，与沟道保护膜重叠的区域的厚度大于与导电膜接触的区域的厚度。