公开(公告)号：US07214603B2

公开(公告)日：2007-05-08

申请号：US10908931

申请日：2005-06-01

申请人： Ronald Dellaguardia ,  Elbert Huang ,  Qinghuang Lin ,  Robert Miller

发明人： Ronald Dellaguardia ,  Elbert Huang ,  Qinghuang Lin ,  Robert Miller

IPC分类号： H01L21/44 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/76835 ,  H01L21/76808 ,  H01L21/76829

摘要： Methods to form interconnect structures utilizing sacrificial filling material layers are described herein. Utilizing the sacrificial filling material makes it possible to reduce damage to interlayer dielectric layers that result in enhanced device performance and/or increased reliability.

摘要翻译： 本文描述了利用牺牲填充材料层形成互连结构的方法。 利用牺牲填充材料使得可以减少导致增强的器件性能和/或增加的可靠性的层间电介质层的损伤。

公开(公告)号：US20060089000A1

公开(公告)日：2006-04-27

申请号：US10973683

申请日：2004-10-26

申请人： Ronald Della Guardia ,  Ranee Kwong ,  Wenjie Li ,  Qinghuang Lin ,  Dirk Pfeiffer ,  David Rath

发明人： Ronald Della Guardia ,  Ranee Kwong ,  Wenjie Li ,  Qinghuang Lin ,  Dirk Pfeiffer ,  David Rath

IPC分类号： H01L21/461 ,  C09K13/00 ,  H01L21/302

CPC分类号： H01L21/76808 ,  C09K13/08 ,  H01L21/31144

摘要： In the back end of integrated circuits employing low-k interlevel dielectrics, etched structures are filled with a planarizing material comprising a cyclic olefin polymer and solvent; the next pattern to be etched is defined in a photosensitive layer above the planarizing layer; the pattern is etched in the dielectric and the planarizing material is stripped in a wet process that does not damage the interlevel dielectric.

摘要翻译： 在采用低k层间电介质的集成电路的后端，用包含环烯烃聚合物和溶剂的平面化材料填充蚀刻结构; 待蚀刻的下一个图案被限定在平坦化层上方的感光层中; 在电介质中蚀刻图案，并且在不损坏层间电介质的湿法中剥离平面化材料。

公开(公告)号：US20050112382A1

公开(公告)日：2005-05-26

申请号：US10721302

申请日：2003-11-24

申请人： Robert Allen ,  Wu-Song Huang ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa Truong

发明人： Robert Allen ,  Wu-Song Huang ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa Truong

IPC分类号： B32B25/20 ,  C07F7/21 ,  G03F7/004 ,  G03F7/075

CPC分类号： C07F7/21 ,  G03F7/0045 ,  G03F7/0755 ,  Y10S430/106 ,  Y10S430/127 ,  Y10T428/31663

摘要： A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C, and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.

摘要翻译： 提供了一种非聚合倍半硅氧烷，其中倍半硅氧烷的至少一个硅原子直接或间接地结合到酸可裂解的取代基R CL上。 倍半硅氧烷的玻璃化转变温度T 大于50℃，R CL取代基可以在低于T T的温度下从倍半硅氧烷中裂解 通常在T T以下至少5℃。 倍半硅氧烷结构中的剩余硅原子可以与另外的酸可裂解基团，酸惰性极性基团R和P和/或酸惰性非极性基团R SUP>。 非聚合倍半硅氧烷可以是任选具有一至三个开放顶点的多面体倍半硅氧烷，使得多面体看起来是“部分笼”结构，或两至四个这样的多面体倍半硅氧烷的大分子单体。 还提供了含有新型非聚合倍半硅氧烷的光致抗蚀剂组合物，以及在制备图案化基材时使用该组合物的方法。

公开(公告)号：US06303275B1

公开(公告)日：2001-10-16

申请号：US09501653

申请日：2000-02-10

申请人： Robert A. Coles ,  John W. Golz ,  Qinghuang Lin ,  Alan C. Thomas ,  Christopher J. Waskiewicz ,  Teresa J. Wu

发明人： Robert A. Coles ,  John W. Golz ,  Qinghuang Lin ,  Alan C. Thomas ,  Christopher J. Waskiewicz ,  Teresa J. Wu

IPC分类号： G03C500

CPC分类号： G03F7/16 ,  G03F7/168

摘要： A method of forming a resist layer of uniform thickness across a surface patterned with a varying density of high aspect ratio features. A selected material layer having an affinity to a resist coat to be applied over the selected material layer is applied to a wafer having a plurality of recesses before applying a resist coat. After the resist coat is applied over the selected material layer, the selected material diffuses partially into the resist coat to condition a portion of the resist coat to be insoluble in the presence of a developer which is applied after the resist coat. Those portions of the resist coat into which the selected material layer has not diffused then are removed by a developer leaving a uniform resist coat thickness across the wafer.

摘要翻译： 一种形成均匀厚度的抗蚀剂层的方法，该抗蚀剂层跨越具有不同密度的高纵横比特征的图案化的表面。 在施加抗蚀剂涂层之前，将具有与要涂覆在所选择的材料层上的抗蚀剂涂层具有亲和性的所选材料层施加到具有多个凹部的晶片上。 在抗蚀剂涂层施加在所选择的材料层上之后，所选择的材料部分地扩散到抗蚀剂涂层中，以使抗蚀剂涂层的一部分在抗蚀剂涂层之后施加的显影剂的存在下不溶。 所选择的材料层未被扩散的抗蚀剂涂层的那些部分被显影剂除去，在晶片上留下均匀的抗蚀剂涂层厚度。

公开(公告)号：US08900988B2

公开(公告)日：2014-12-02

申请号：US13088083

申请日：2011-04-15

申请人： Qinghuang Lin ,  Benjamin L. Fletcher ,  Cyril Cabral, Jr.

发明人： Qinghuang Lin ,  Benjamin L. Fletcher ,  Cyril Cabral, Jr.

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/768 ,  H01L21/311

CPC分类号： H01L23/5222 ,  H01L21/31127 ,  H01L21/7682 ,  H01L21/76885 ,  H01L23/4821 ,  H01L23/528 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

摘要： Devices and methods for forming a self-aligned airgap interconnect structure includes etching a conductive layer to a substrate to form conductive structures with patterned gaps and filling the gaps with a sacrificial material. The sacrificial material is planarized to expose a top surface of the conductive layer. A permeable cap layer is deposited over the conductive structure and the sacrificial material. Self-aligned airgaps are formed by removing the sacrificial material through the permeable layer.

摘要翻译： 用于形成自对准气隙互连结构的装置和方法包括将导电层蚀刻到衬底以形成具有图案化间隙的导电结构并用牺牲材料填充间隙。 将牺牲材料平坦化以暴露导电层的顶表面。 在导电结构和牺牲材料上沉积可渗透盖层。 通过可渗透层去除牺牲材料形成自对准的气隙。

公开(公告)号：US08822137B2

公开(公告)日：2014-09-02

申请号：US13197325

申请日：2011-08-03

申请人： Qinghuang Lin ,  Sanjay Mehta ,  Hosadurga Shobha

发明人： Qinghuang Lin ,  Sanjay Mehta ,  Hosadurga Shobha

IPC分类号： H01L23/48

CPC分类号： H01L23/5222 ,  H01L21/768 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76816 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L23/53295 ,  H01L2221/1026 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure and methods for making the same include sidewall portions of an interlevel dielectric layer. The sidewall portions have a width less than a minimum feature size for a given lithographic technology and the width is formed by a thickness of the interlevel dielectric layer when conformally formed on vertical surfaces of a mandrel. The sidewall portions form spaced-apart openings. Conductive structures fill the spaced-apart openings and are separated by the sidewall portions to form single damascene structures.

摘要翻译： 互连结构及其制造方法包括层间电介质层的侧壁部分。 侧壁部分具有小于给定平版印刷技术的最小特征尺寸的宽度，并且当在心轴的垂直表面上共形形成时，宽度由层间电介质层的厚度形成。 侧壁部分形成间隔开的开口。 导电结构填充间隔开的开口并且被侧壁部分分开以形成单个镶嵌结构。

公开(公告)号：US08795556B2

公开(公告)日：2014-08-05

申请号：US13454723

申请日：2012-04-24

申请人： Qinghuang Lin

发明人： Qinghuang Lin

IPC分类号： C09K5/00 ,  G03F7/095 ,  G03F7/075 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/027 ,  G03F7/004 ,  H01L21/31 ,  G03F7/039 ,  H01L21/02 ,  H01L23/532 ,  G03F7/038

CPC分类号： H01L23/53295 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0757 ,  G03F7/095 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02345 ,  H01L21/0276 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76816 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A hybrid photo-patternable dielectric material is provided that has dual-tone properties with a parabola like dissolution response to radiation. In one embodiment, the hybrid photo-patternable dielectric material includes a composition of at least one positive-tone component including a positive-tone polymer, positive-tone copolymer, or blends of positive-tone polymers and/or positive-tone copolymers having one or more acid sensitive positive-tone functional groups; at least one negative-tone component including a negative-tone polymer, negative-tone copolymer, or blends of negative-tone polymers and/or negative-tone copolymers having one or more acid sensitive negative-tone functional groups; at least one photoacid generator; and at least one solvent that is compatible with the positive-tone and negative-tone components.

摘要翻译： 提供了具有双重色调的混合光可图案化电介质材料，具有抛物线，如对辐射的溶解响应。 在一个实施方案中，混合光可图案化电介质材料包括至少一种正色调组分的组合物，其包括正色调聚合物，正色调共聚物或具有一个单体的正性聚合物和/或正性色调共聚物的共混物 或更多的酸敏感正音官能团; 至少一种负色调组分，包括负色调聚合物，负性色谱共聚物或具有一个或多个酸敏感负性官能团的负色调聚合物和/或负色调共聚物的共混物; 至少一个光致酸发生器; 和至少一种与正性和负性成分相容的溶剂。

公开(公告)号：US08642252B2

公开(公告)日：2014-02-04

申请号：US12721032

申请日：2010-03-10

申请人： Lawrence A. Clevenger ,  Maxime Darnon ,  Satyanarayana V. Nitta ,  Anthony D. Lisi ,  Qinghuang Lin

发明人： Lawrence A. Clevenger ,  Maxime Darnon ,  Satyanarayana V. Nitta ,  Anthony D. Lisi ,  Qinghuang Lin

IPC分类号： H01L21/764

CPC分类号： H01L23/4821 ,  C08L83/04 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

摘要翻译： 公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。 更具体地说，本文描述的方法提供内置于光可图案化的低k材料中的互连结构，其中通过光刻法在光可图案化的低k材料中限定气隙。 在本发明的方法中，不需要蚀刻步骤来形成气隙。 由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。

公开(公告)号：US08618663B2

公开(公告)日：2013-12-31

申请号：US11858636

申请日：2007-09-20

申请人： Qinghuang Lin ,  Deborah A. Neumayer

发明人： Qinghuang Lin ,  Deborah A. Neumayer

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76808 ,  H01L21/02118 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/0276 ,  H01L21/31 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3148 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76843 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate, said inorganic antireflective coating is vapor deposited and comprises atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La; forming at least one interconnect pattern within the at least one patternable low-k material; and curing the at least one patternable low-k material. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.

摘要翻译： 本发明提供一种制造互连结构的方法，其中可图案化的低k材料替代了使用单独的光致抗蚀剂和电介质材料的需要。 具体地说，本发明涉及一种制备具有至少一个可图案化的低k电介质和至少一种无机抗反射涂层的单镶嵌和双镶嵌低k互连结构的简化方法。 一般来说，提供了一种方法，其包括在位于基底顶部的无机抗反射涂层的表面上提供至少一种可图案化的低k材料，所述无机抗反射涂层被气相沉积并包含M，C和H原子 其中M是Si，Ge，B，Sn，Fe，Ta，Ti，Ni，Hf和La中的至少一种; 在所述至少一个可编码的低k材料内形成至少一个互连图案; 以及固化所述至少一种可图案化的低k材料。 本发明的方法可用于形成双镶嵌互连结构以及单镶嵌互连结构。

公开(公告)号：US20130302978A1

公开(公告)日：2013-11-14

申请号：US13605763

申请日：2012-09-06

申请人： Griselda Bonilla ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  James B. Hannon ,  Qinghuang Lin ,  Deborah A. Neumayer ,  Satoshi Oida ,  John A. Ott ,  Dirk Pfeiffer

发明人： Griselda Bonilla ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  James B. Hannon ,  Qinghuang Lin ,  Deborah A. Neumayer ,  Satoshi Oida ,  John A. Ott ,  Dirk Pfeiffer

IPC分类号： H01L21/768

CPC分类号： H01L21/76877 ,  H01L21/76835 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.

摘要翻译： 提供了包括位于铜结构的暴露表面上的石墨烯盖的互连结构。 在一些实施例中，石墨烯盖仅位于铜结构的最上表面的顶部，而在其它实施例中，石墨烯盖位于垂直侧壁和铜结构的最上表面的顶部。 铜结构位于电介质材料内。