公开(公告)号：US07923838B2

公开(公告)日：2011-04-12

申请号：US12122984

申请日：2008-05-19

申请人： Christian Lavoie ,  Conal E. Murray ,  Kenneth P. Rodbell

发明人： Christian Lavoie ,  Conal E. Murray ,  Kenneth P. Rodbell

IPC分类号： H01L21/4763

CPC分类号： H01L23/485 ,  H01L21/28518 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).

摘要翻译： 提供了其中接触开口中的接触电阻降低的半导体结构及其形成方法。 这在本发明中通过用含金属锗化物的接触材料代替常规的接触冶金例如钨或金属硅化物，例如硅化镍或硅化铜，来实现。 在本申请中使用的术语“含金属锗”表示纯金属锗（即MGe合金）或包含Si（即，MSiGe合金）的金属锗化物。

公开(公告)号：US07517795B2

公开(公告)日：2009-04-14

申请号：US11551647

申请日：2006-10-20

申请人： Roy A. Carruthers ,  Cedrik Y. Cole ,  Christophe Detavernier ,  Christian Lavoie ,  Kenneth P. Rodbell

发明人： Roy A. Carruthers ,  Cedrik Y. Cole ,  Christophe Detavernier ,  Christian Lavoie ,  Kenneth P. Rodbell

IPC分类号： H01L21/44

CPC分类号： H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.

摘要翻译： 在后续热处理中，形成稳定的金属硅化物膜例如接触（源极/漏极或栅极）的方法基本上不附着在本发明中，能够附着在Si- 在形成金属硅化物之前，将含硅层注入到含Si层中。 植入的离子稳定膜，因为发现植入物基本上防止结块或至少延迟聚集到比没有使用植入物的情况下更高的温度。

公开(公告)号：US20090059657A1

公开(公告)日：2009-03-05

申请号：US11845170

申请日：2007-08-27

申请人： Ethan H. Cannon ,  Michael S. Gordon ,  Christopher D. LeBlanc ,  Kenneth P. Rodbell

发明人： Ethan H. Cannon ,  Michael S. Gordon ,  Christopher D. LeBlanc ,  Kenneth P. Rodbell

IPC分类号： G11C11/00 ,  H01L47/00

CPC分类号： G11C11/4125 ,  G11C13/0004

摘要： A radiation tolerant circuit, structure of the circuit and method of autonomic radiation event device protection. The circuit includes a charge storage node connected to a resistor, the resistor comprising a material having an amorphous state and a crystalline state, the amorphous state having a higher resistance than the crystalline state, the material reversibly convertible between the amorphous state and the crystalline state by application of heat; an optional resistive heating element proximate to the resistor; and means for writing data to the charge storage node and means for reading data from the charge storage node.

摘要翻译： 辐射耐受电路，电路结构及自主辐射事件装置保护方法。 电路包括连接到电阻器的电荷存储节点，该电阻器包括具有非晶状态和结晶状态的材料，非晶状态具有比结晶状态更高的电阻，该材料可在非晶状态和结晶态之间可逆地转换 通过应用热量; 靠近电阻器的可选电阻加热元件; 以及用于向电荷存储节点写入数据的装置和用于从电荷存储节点读取数据的装置。

公开(公告)号：US20080201681A1

公开(公告)日：2008-08-21

申请号：US12111529

申请日：2008-04-29

申请人： Giovanni Fiorenza ,  Conal E. Murray ,  Kenneth P. Rodbell ,  Henry Tang

发明人： Giovanni Fiorenza ,  Conal E. Murray ,  Kenneth P. Rodbell ,  Henry Tang

IPC分类号： G06F17/50

CPC分类号： G06F17/5009 ,  G06F2217/16

摘要： A computer program product, comprising a computer usable medium having a computer readable program code embodied therein, said computer readable program code including an algorithm adapted to implement a method including the following steps. First, design information of the design structure is provided including a back-end-of-line layer of the integrated circuit which includes N interconnect layers, N being a positive integer. Next, each interconnect layer of the N interconnect layers is divided into multiple pixels. Next, a first path of a traveling particle in a first interconnect layer of the N interconnect layers is determined. Next, M path pixels of the multiple pixels of the first interconnect layer on the first path of the traveling particle are identified, M being a positive integer. Next, a first loss energy lost by the traveling particle due to its completely passing through a first pixel of the M path pixels is determined.

摘要翻译： 一种计算机程序产品，包括具有包含在其中的计算机可读程序代码的计算机可用介质，所述计算机可读程序代码包括适于实现包括以下步骤的方法的算法。 首先，提供设计结构的设计信息，其包括包括N个互连层的集成电路的后端行层，N是正整数。 接下来，N个互连层的每个互连层被分成多个像素。 接下来，确定N个互连层的第一互连层中的行进粒子的第一路径。 接下来，识别行进粒子的第一路径上的第一互连层的多个像素的M个路径像素，M是正整数。 接下来，确定由于行进粒子完全通过M路径像素的第一像素而损失的第一损失能量。

公开(公告)号：US20080164584A1

公开(公告)日：2008-07-10

申请号：US12051040

申请日：2008-03-19

申请人： Cyril Cabral ,  Michael S. Gordon ,  Kenneth P. Rodbell

发明人： Cyril Cabral ,  Michael S. Gordon ,  Kenneth P. Rodbell

IPC分类号： H01L23/556 ,  G01R31/26 ,  G06F17/50

CPC分类号： H01L23/556 ,  H01L21/76801 ,  H01L21/76834 ,  H01L21/76838 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05006 ,  H01L2224/05554 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01092 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15312 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/05552

摘要： A structure and a method for reduction of soft error rates in integrated circuits. The structure including: a semiconductor substrate; and a stack of one or more wiring levels stacked from a lowermost wiring level to an uppermost wiring level, the lowermost wiring level nearer the semiconductor substrate than the uppermost wiring level; and an alpha particle blocking layer on a top surface of the uppermost wiring level of the one or more wiring levels, the blocking layer comprising metal wires and a dielectric material, the blocking layer having a combination of a thickness of the blocking layer and a volume percent of metal wires in the blocking layer sufficient to stop a predetermined percentage of alpha particles of a selected energy or less striking the blocking layer from penetrating into the stack of one or more wiring levels or the substrate.

摘要翻译： 降低集成电路中软错误率的结构和方法。 该结构包括：半导体衬底; 以及从最下布线电平堆叠到最上布线电平的一个或多个布线电平的堆叠，比最上布线电平更靠近半导体基板的最下布线电平; 以及在所述一个或多个布线层的最上布线层的顶表面上的α粒子阻挡层，所述阻挡层包括金属线和介电材料，所述阻挡层具有阻挡层的厚度和体积 阻挡层中的金属线的百分比足以阻止预定百分比的选定能量的α粒子或更少的击穿阻挡层的金属线穿透到一个或多个布线层或衬底的堆叠中。

公开(公告)号：US20080156636A1

公开(公告)日：2008-07-03

申请号：US11971488

申请日：2008-01-09

申请人： Kevin S. Petrarca ,  Mahadevaiyer Krishnan ,  Michael Lofaro ,  Kenneth P. Rodbell

发明人： Kevin S. Petrarca ,  Mahadevaiyer Krishnan ,  Michael Lofaro ,  Kenneth P. Rodbell

IPC分类号： C23C14/16

CPC分类号： H01L21/76873 ,  H01L21/2855 ,  H01L21/7684 ,  H01L21/76877

摘要： Defects on the edge of copper interconnects for back end of the line semiconductor devices are alleviated by an interconnect that comprises an impure copper seed layer. The impure copper seed layer covers a barrier layer, which covers an insulating layer that has an opening. Electroplated copper fills the opening in the insulating layer. Through a chemical mechanical polish, the barrier layer, the impure an impure copper seed layer derived from an electroplated copper bath copper seed layer, and the electroplated copper are planarized to the insulating layer.

摘要翻译： 通过包括不纯铜种子层的互连可以减轻线半导体器件后端的铜互连边缘的缺陷。 不纯铜种子层覆盖阻挡层，其覆盖具有开口的绝缘层。 电镀铜填充绝缘层中的开口。 通过化学机械抛光，阻挡层，不纯的由电镀铜浴铜籽晶层衍生的铜籽晶层和电镀铜平坦化到绝缘层。

公开(公告)号：US20070275548A1

公开(公告)日：2007-11-29

申请号：US11440202

申请日：2006-05-24

申请人： Christian Lavoie ,  Conal E. Murray ,  Kenneth P. Rodbell

发明人： Christian Lavoie ,  Conal E. Murray ,  Kenneth P. Rodbell

IPC分类号： H01L21/44

CPC分类号： H01L23/485 ,  H01L21/28518 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).

摘要翻译： 提供了其中接触开口中的接触电阻降低的半导体结构及其形成方法。 这在本发明中通过用含金属锗化物的接触材料代替常规的接触冶金例如钨或金属硅化物，例如硅化镍或硅化铜，来实现。 在本申请中使用的术语“含金属锗”表示纯金属锗（即MGe合金）或包含Si（即，MSiGe合金）的金属锗化物。

公开(公告)号：US07119012B2

公开(公告)日：2006-10-10

申请号：US10838377

申请日：2004-05-04

申请人： Roy A. Carruthers ,  Cedrik Y. Coia ,  Christophe Detavernier ,  Christian Lavoie ,  Kenneth P. Rodbell

发明人： Roy A. Carruthers ,  Cedrik Y. Coia ,  Christophe Detavernier ,  Christian Lavoie ,  Kenneth P. Rodbell

IPC分类号： H01L21/44

CPC分类号： H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided. In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.

摘要翻译： 提供了一种用于形成稳定的金属硅化物膜的方法，例如接触（源极/漏极或栅极），其在随后的热处理期间基本上不附聚。 在本发明中，在形成金属硅化物之前，将能够附着到含Si层内的缺陷的离子注入到含Si层中。 植入的离子稳定膜，因为发现植入物基本上防止结块或至少延迟聚集到比没有使用植入物的情况下更高的温度。

公开(公告)号：US06383066B1

公开(公告)日：2002-05-07

申请号：US09599514

申请日：2000-06-23

申请人： Shyng-Tsong Chen ,  Alex Siu Keung Chung ,  Oscar Kai Chi Hsu ,  Kenneth P. Rodbell ,  Jean Vangsness

发明人： Shyng-Tsong Chen ,  Alex Siu Keung Chung ,  Oscar Kai Chi Hsu ,  Kenneth P. Rodbell ,  Jean Vangsness

IPC分类号： B24D1100

CPC分类号： B24B37/22 ,  B24B37/24 ,  B24D3/28

摘要： A multilayered polishing pad especially suitable for chemical-mechanical polishing or planarizing metal, semiconductor or optical surfaces is provided. The invention allows the mechanical and polishing properties of the several layers to be independently varied.

摘要翻译： 提供了特别适用于化学机械抛光或平面化金属，半导体或光学表面的多层抛光垫。 本发明允许独立地改变若干层的机械和抛光性能。

公开(公告)号：US5565707A

公开(公告)日：1996-10-15

申请号：US332328

申请日：1994-10-31

申请人： Evan G. Colgan ,  Kenneth P. Rodbell ,  Paul A. Totta ,  James F. White

发明人： Evan G. Colgan ,  Kenneth P. Rodbell ,  Paul A. Totta ,  James F. White

IPC分类号： H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53219 ,  H01L23/5226 ,  H01L2924/0002 ,  Y10S438/927

摘要： An interconnect structure and method for an integrated circuit chip for resisting electromigration is described incorporating patterned interconnect layers of Al or Al-Cu and interlayer contact regions or studs of Al.sub.2 Cu between patterned interconnect layers. The invention overcomes the problem of electromigration at high current density in the interconnect structure by providing a continuous path for Cu and/or Al atoms to move in the interconnect structure.

摘要翻译： 描述了一种用于抵抗电迁移的集成电路芯片的互连结构和方法，其包括图案化互连层之间的Al或Al-Cu的图案化互连层和Al2Cu的层间接触区域或柱。 本发明通过提供用于Cu和/或Al原子在互连结构中移动的连续路径来克服互连结构中的高电流密度下电迁移的问题。