公开(公告)号：US09742378B2

公开(公告)日：2017-08-22

申请号：US13922685

申请日：2013-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshifumi Tanada ,  Manabu Sato ,  Hiroyuki Miyake ,  Toshinari Sasaki ,  Kenichi Okazaki ,  Junichi Koezuka ,  Shunpei Yamazaki

IPC: H03K3/01 ,  G11C19/28 ,  G09G3/36

CPC classification number: H03K3/01 ,  G09G3/3688 ,  G11C19/28

Abstract: A highly reliable semiconductor device in which a shift in threshold voltage of a transistor due to deterioration can be inhibited is provided. A pulse output circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor. A clock signal is supplied to a drain of the first transistor. A first power supply potential is applied to a source of the second transistor, and a drain of the second transistor is connected to the drain of the first transistor. A second power supply potential is applied to a drain of the third transistor. The first power supply potential is applied to a source of the fourth transistor, and a drain of the fourth transistor is connected to the drain of the third transistor. The first power supply potential is applied to a source of the fifth transistor, and a drain of the fifth transistor is connected to a gate of the third transistor. One of a source and a drain of the sixth transistor is connected to the drain of the first transistor, and the other of the source and the drain of the sixth transistor is connected to the gate of the third transistor. The first transistor and the third transistor include back gates connected to each other. The first to sixth transistors have the same conductivity type.

公开(公告)号：US09711652B2

公开(公告)日：2017-07-18

申请号：US14878446

申请日：2015-10-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Kenichi Okazaki

IPC: H01L29/04 ,  H01L29/786 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with the oxide insulating layer and overlapping with the gate electrode layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The gate insulating layer includes a silicon film containing nitrogen. The oxide insulating layer contains one or more metal elements selected from the constituent elements of the oxide semiconductor layer. The thickness of the gate insulating layer is larger than that of the oxide insulating layer.

公开(公告)号：US09666605B2

公开(公告)日：2017-05-30

申请号：US15220430

申请日：2016-07-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masahiro Katayama ,  Masataka Nakada

IPC: H01L29/08 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L29/49

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

公开(公告)号：US09660093B2

公开(公告)日：2017-05-23

申请号：US14047209

申请日：2013-10-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Mitsuo Mashiyama ,  Takuya Handa ,  Masahiro Watanabe ,  Hajime Tokunaga

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L27/1248 ,  G02F1/1368 ,  H01L21/70 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/50

Abstract: Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor device includes a multilayer film formed of an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the oxide layer, and a gate electrode overlapping with the multilayer film with the gate insulating film interposed therebetween. The oxide layer contains a common element to the oxide semiconductor layer and has a large energy gap than the oxide semiconductor layer. The composition between the oxide layer and the oxide semiconductor layer gradually changes.

公开(公告)号：US09640555B2

公开(公告)日：2017-05-02

申请号：US14733052

申请日：2015-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Takahiro Iguchi

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L29/513 ,  H01L29/66969 ,  H01L29/7869

Abstract: A change in electrical characteristics can be inhibited and reliability can be improved in a semiconductor device including an oxide semiconductor. The semiconductor device including an oxide semiconductor film includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a third insulating film over the second insulating film. The second insulating film includes oxygen and silicon, the third insulating film includes nitrogen and silicon, and indium is included in a vicinity of an interface between the second insulating film and the third insulating film.

公开(公告)号：US09601634B2

公开(公告)日：2017-03-21

申请号：US14556769

申请日：2014-12-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Katayama ,  Chieko Misawa ,  Yuka Yokoyama ,  Hironobu Takahashi ,  Kenichi Okazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78606

Abstract: A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.

公开(公告)号：US09406760B2

公开(公告)日：2016-08-02

申请号：US14626049

申请日：2015-02-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Takahisa Ishiyama ,  Kenichi Okazaki ,  Chiho Kawanabe ,  Masashi Oota ,  Noritaka Ishihara

IPC: H01L21/00 ,  H01L29/24 ,  C01G15/00 ,  H01L27/12

CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

Abstract translation: 给半导体器件提供有利的电特性。 此外，提供了具有高可靠性的半导体器件。 本发明的一个实施方案是具有多个电子衍射图案的氧化物半导体膜，其以使得形成氧化物半导体膜的表面被照射电子束，该电子束的半峰宽为 1nm。 多个电子衍射图案包括在不同区域中观察到的50个以上的电子衍射图案，第一电子衍射图案的百分比和第二电子衍射图案的百分比之和占100％，第一电子衍射图案占 90％以上时，第一电子衍射图案包括观察点，其表示c轴在与形成氧化物半导体膜的表面基本垂直的方向上取向。

公开(公告)号：US09324810B2

公开(公告)日：2016-04-26

申请号：US14089085

申请日：2013-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Tokunaga ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/22 ,  H01L29/786

CPC classification number: H01L29/78696 ,  H01L29/22 ,  H01L29/247 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693

Abstract: A highly reliable semiconductor device having stable electrical characteristics is provided. Oxide films each containing one or more kinds of metal elements included in an oxide semiconductor film are formed in contact with an upper side and a lower side of the oxide semiconductor film where a channel is formed, whereby interface states are not easily generated at an upper interface and a lower interface of the oxide semiconductor film. A material which has a lower electron affinity than the oxide semiconductor film is used for the oxide films in contact with the oxide semiconductor film, whereby electrons flowing in the channel hardly move in the oxide films and mainly move in the oxide semiconductor film. Thus, even when an interface state exists between the oxide film and an insulating film formed on the outside of the oxide film, the state hardly influences the movement of electrons.

Abstract translation: 提供了具有稳定的电气特性的高度可靠的半导体器件。 与包含在氧化物半导体膜中的一种或多种金属元素的氧化物膜形成为与形成沟道的氧化物半导体膜的上侧和下侧接触，由此在上部不容易产生界面状态 界面和氧化物半导体膜的下界面。 与氧化物半导体膜接触的氧化物膜使用具有比氧化物半导体膜更低的电子亲和力的材料，由此在沟道中流动的电子在氧化膜中几乎不会移动，并且主要在氧化物半导体膜中移动。 因此，即使在氧化物膜和形成在氧化物膜的外部的绝缘膜之间存在界面状态的情况下，该状态几乎不影响电子的移动。

公开(公告)号：US09318317B2

公开(公告)日：2016-04-19

申请号：US14543287

申请日：2014-11-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/385 ,  H01L23/3171 ,  H01L29/045 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

Abstract translation: 在包括晶体管上的包括氧化物半导体膜和保护膜的晶体管的半导体器件中，在以下条件下形成含有超过化学计量组成的氧的氧化物绝缘膜作为保护膜：放置在处理室中的衬底 抽真空至真空度保持在高于或等于180℃且低于或等于260℃的温度; 将源气体引入处理室，使得处理室中的压力设定为高于或等于100Pa且小于或等于250Pa; 并且将高于或等于0.17W / cm 2且低于或等于0.5W / cm 2的高频功率供应到设置在处理室中的电极。

公开(公告)号：US09097925B2

公开(公告)日：2015-08-04

申请号：US13942468

申请日：2013-07-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi Yokoyama ,  Shigeki Komori ,  Manabu Sato ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/1333 ,  G02F1/1362

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136277 ,  G02F2001/134372 ,  G02F2202/02 ,  G02F2202/10 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/04 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/7869

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract translation: 为了抑制由于来自有机绝缘膜的释放气体导致的晶体管的特性的变化，使得显示装置的可靠性增加。 显示装置包括晶体管，设置在晶体管上方的有机绝缘膜，以减少由于晶体管引起的不均匀性以及有机绝缘膜上的电容器。 有机绝缘膜的整个表面没有被电容器的部件（透明导电层和无机绝缘膜）覆盖，并且来自有机绝缘膜的释放气体可以从上表面的暴露部分释放到外部 的有机绝缘膜。