公开(公告)号：US20180166578A1

公开(公告)日：2018-06-14

申请号：US15831763

申请日：2017-12-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yuta Endo ,  Yoshiaki Oikawa

IPC: H01L29/786 ,  H01L29/51 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/0228 ,  H01L29/24 ,  H01L29/51 ,  H01L29/517 ,  H01L29/66 ,  H01L29/66969 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/786

Abstract: A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a first conductor over a substrate; a first insulator over the first conductor; an oxide over the first insulator; a second insulator over the oxide; a second conductor over the second insulator; a third insulator over the second conductor; a fourth insulator in contact with a side surface of the second insulator, a side surface of the second conductor, and a side surface of the third insulator; and a fifth insulator in contact with the oxide, the first insulator, and the fourth insulator. The first insulator and the fifth insulator are in contact with each other in a region on the periphery of the side of the oxide. The oxide includes a first region where a channel is formed; a second region adjacent to the first region; a third region adjacent to the second region; and a fourth region adjacent to the third region. The first region has higher resistance than the second region, the third region, and the fourth region and overlaps with the second conductor. The second region has higher resistance than the third region and the fourth region and overlaps with the second conductor. The third region has higher resistance than the fourth region and overlaps with the fourth insulator.

公开(公告)号：US09978774B2

公开(公告)日：2018-05-22

申请号：US15420628

申请日：2017-01-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yuta Endo ,  Kiyoshi Kato ,  Satoru Okamoto

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L27/105 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L27/1207 ,  H01L21/0206 ,  H01L21/0214 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/31155 ,  H01L21/76825 ,  H01L21/76834 ,  H01L21/8258 ,  H01L23/528 ,  H01L23/53295 ,  H01L27/0629 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/092 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: A highly reliable semiconductor device suitable for miniaturization and high integration is provided. The semiconductor device includes a first insulator; a transistor over the first insulator; a second insulator over the transistor; a first conductor embedded in an opening in the second insulator; a barrier layer over the first conductor; a third insulator over the second insulator and over the barrier layer; and a second conductor over the third insulator. The first insulator, the third insulator, and the barrier layer have a barrier property against oxygen and hydrogen. The second insulator includes an excess-oxygen region. The transistor includes an oxide semiconductor. The barrier layer, the third insulator, and the second conductor function as a capacitor.

公开(公告)号：US09966473B2

公开(公告)日：2018-05-08

申请号：US15147279

申请日：2016-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo

IPC: H01L21/00 ,  H01L21/16 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78696

Abstract: A miniaturized transistor with less variation and highly stable electrical characteristics is provided. Further, high performance and high reliability of a semiconductor device including the transistor are achieved. A semiconductor and a conductor are formed over a substrate, a sacrificial layer is formed over the conductor, and an insulator is formed to cover the sacrificial layer. After that, a top surface of the insulator is removed to expose a top surface of the sacrificial layer. The sacrificial layer and a region of the conductor overlapping with the sacrificial layer are removed, whereby a source region, a drain region, and an opening are formed. Next, a gate insulator and a gate electrode are formed in the opening.

公开(公告)号：US09842939B2

公开(公告)日：2017-12-12

申请号：US15259294

申请日：2016-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato ,  Mitsuhiro Ichijo ,  Toshiya Endo

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which faints a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.

公开(公告)号：US09837546B2

公开(公告)日：2017-12-05

申请号：US15081129

申请日：2016-03-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yuta Endo ,  Yoko Tsukamoto

IPC: H01L29/12 ,  H01L21/36 ,  H01L29/10 ,  H01L21/84 ,  H01L31/036 ,  H01L31/0376 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L29/42392 ,  H01L29/78696

Abstract: To provide a miniaturized transistor having highly stable electrical characteristics. Furthermore, also in a semiconductor device including the transistor, high performance and high reliability are achieved. The transistor includes, over a substrate, a conductor, an oxide semiconductor, and an insulator. The oxide semiconductor includes a first region and a second region. The resistance of the second region is lower than that of the first region. The entire surface of the first region in the oxide semiconductor is surrounded in all directions by the conductor with the insulator interposed therebetween.

公开(公告)号：US09768279B2

公开(公告)日：2017-09-19

申请号：US14263479

申请日：2014-04-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kosei Noda ,  Yuichi Sato ,  Yuta Endo

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/265 ,  H01L29/786 ,  H01L27/1156

CPC classification number: H01L29/66969 ,  H01L21/26586 ,  H01L27/1156 ,  H01L29/7869

Abstract: To provide a transistor formed using an oxide semiconductor film with reduced oxygen vacancies. To provide a semiconductor device that operates at high speed. To provide a highly reliable semiconductor device. To provide a miniaturized semiconductor device. The semiconductor device includes an oxide semiconductor film; a gate electrode overlapping with the oxide semiconductor film; a gate insulating film between the oxide semiconductor film and the gate electrode; and a protective insulating film that is above the oxide semiconductor film, the gate electrode, and the gate insulating film and includes a region containing phosphorus or boron.

公开(公告)号：US20170221707A1

公开(公告)日：2017-08-03

申请号：US15488854

申请日：2017-04-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Kosei NODA ,  Yuichi SATO

IPC: H01L21/02 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/06 ,  H01L21/8238 ,  H01L29/49

Abstract: A transistor that is formed using an oxide semiconductor film is provided. A transistor that is formed using an oxide semiconductor film with reduced oxygen vacancies is provided. A transistor having excellent electrical characteristics is provided. A semiconductor device includes a first insulating film, a first oxide semiconductor film, a gate insulating film, and a gate electrode. The first insulating film includes a first region and a second region. The first region is a region that transmits less oxygen than the second region does. The first oxide semiconductor film is provided at least over the second region.

公开(公告)号：US09396939B2

公开(公告)日：2016-07-19

申请号：US14678119

申请日：2015-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato

IPC: H01L21/322 ,  H01L21/02 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L21/02554 ,  H01L21/02488 ,  H01L21/02664 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.

公开(公告)号：US08975115B2

公开(公告)日：2015-03-10

申请号：US14148906

申请日：2014-01-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Kosei Noda ,  Toshinari Sasaki

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/02367 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/7869

Abstract: An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region and a drain region of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase of the resistance of the source region and the drain region.

Abstract translation: 使用释放大量氧的绝缘层作为与氧化物半导体层的沟道区域接触的绝缘层，并且使用释放少量氧的绝缘层作为与源极接触的绝缘层 区域和氧化物半导体层的漏极区域。 通过从释放大量氧的绝缘层释放氧气，可以减少沟道区域中的氧缺乏以及绝缘层和沟道区域之间的界面态密度，从而可以降低电子变化小的高度可靠的半导体器件 特性可以制造。 源极区域和漏极区域设置成与释放少量氧气的绝缘层接触，从而抑制源极区域和漏极区域的电阻的增加。

公开(公告)号：US20140183528A1

公开(公告)日：2014-07-03

申请号：US14141806

申请日：2013-12-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuta Endo

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  G02F1/1368 ,  G02F2001/136236 ,  G02F2001/13685 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/1296 ,  H01L29/7869

Abstract: A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor.

Abstract translation: 提供了一种具有高开口率的半导体器件。 半导体器件包括晶体管和具有一对电极的电容器。 形成在同一绝缘表面上的氧化物半导体层用于晶体管的沟道形成区域和电容器的电极之一。 电容器的另一个电极是透明导电膜。 电容器的一个电极电连接到形成在绝缘表面上的布线，在该绝缘表面上设置有晶体管的源电极或漏极，并且电容器的另一个电极电连接到源电极和漏极 电极。