Light emitting diode for display and display apparatus having the same

    公开(公告)号:US12142602B2

    公开(公告)日:2024-11-12

    申请号:US17844653

    申请日:2022-06-20

    Abstract: A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes AlxGa(1-x-y)InyP (0≤x≤1, 0≤y≤1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.

    Light emitting device having a stacked structure

    公开(公告)号:US12057542B2

    公开(公告)日:2024-08-06

    申请号:US18132938

    申请日:2023-04-10

    CPC classification number: H01L33/62 H01L27/15 H01L33/24 H01L33/50

    Abstract: A light emitting device including a first light emitting part, a second light emitting part disposed on a first surface of the first light emitting part, and a third light emitting part disposed on a first surface of the second light emitting part, a first contact member contacting a surface of a second n-type semiconductor layer of the second light emitting part, an ohmic electrode electrically connected to a third p-type semiconductor layer of the third light emitting part, and an adhesive layer disposed between the second light emitting part and the third light emitting part, in which the first contact member extends toward the first light emitting part to be electrically connected to a first n-type semiconductor layer of the first light emitting part, and the adhesive layer extends toward the ohmic electrode.

    LED CHIP PACKAGE AND MANUFACTURING METHOD OF THE SAME

    公开(公告)号:US20230387178A1

    公开(公告)日:2023-11-30

    申请号:US18232371

    申请日:2023-08-10

    CPC classification number: H01L27/15 H01L33/56 H01L33/38 H01L33/486 H01L33/44

    Abstract: A light emitting module including a substrate, a first light emitter, a second light emitter, and a third light emitter, in which at least two of the first, second, and third emitters are disposed one over another, connection electrodes electrically connected to at least one of the first, second, and third light emitters, a passivation layer covering at least one side surface of the connection electrodes and exposing at least a region of the first light emitter, and a first electrode electrically connected to at least one of the connection electrodes, in which the first electrode is electrically connected to at least one of the first, second, and third electrodes through the at least one of the connection electrodes, and at least one of connection electrodes overlaps side surfaces of two or more of the first, second, and third light emitters in a plan view.

    LED chip package and manufacturing method of the same

    公开(公告)号:US11756980B2

    公开(公告)日:2023-09-12

    申请号:US16858674

    申请日:2020-04-26

    CPC classification number: H01L27/15 H01L33/38 H01L33/44 H01L33/486 H01L33/56

    Abstract: A light emitting package includes a first LED sub-unit having first and second opposed surfaces, a second LED sub-unit disposed on the second surface of the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a plurality of connection electrodes having side surfaces and electrically connected to at least one of the LED sub-units, the connection electrodes covering a side surface of at least one of the LED sub-units, a first passivation layer surrounding at least the sides surfaces of the connection electrodes, the first passivation layer exposing at least a portion of the first surface of the first LED sub-unit, a substrate having first and second opposed surfaces, with the first surface of the substrate facing the LED sub-units, and a first electrode disposed on the first surface of the substrate and connected to at least one of the connection electrodes.

    LED chip and manufacturing method of the same

    公开(公告)号:US11587914B2

    公开(公告)日:2023-02-21

    申请号:US16852522

    申请日:2020-04-19

    Abstract: A light emitting chip including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a passivation layer disposed on the third LED sub-unit, and a first connection electrode electrically connected to at least one of the first, second, and third LED sub-units, in which the first connection electrode and the third LED sub-unit form a first angle defined between an upper surface of the third LED sub-unit and an inner surface of the first connection electrode that is less than about 80°.

    LIGHT EMITTING DIODE FOR DISPLAY AND DISPLAY APPARATUS HAVING THE SAME

    公开(公告)号:US20220392879A1

    公开(公告)日:2022-12-08

    申请号:US17844653

    申请日:2022-06-20

    Abstract: A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes AlxGa(1-x-y)InyP (0≤x≤1, 0≤y≤1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.

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