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公开(公告)号:US09236385B2
公开(公告)日:2016-01-12
申请号:US14336142
申请日:2014-07-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei Yamazaki , Masashi Tsubuku , Kosei Noda , Kouhei Toyotaka , Kazunori Watanabe , Hikaru Harada
IPC: H01L29/04 , H01L29/12 , H01L29/78 , H01L27/108 , H01L27/11 , H01L49/02 , H01L29/786 , G06F15/76 , H01L29/24 , H01L27/12
CPC classification number: H01L29/7869 , G06F15/76 , H01L27/10805 , H01L27/10873 , H01L27/11 , H01L27/1108 , H01L27/1112 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L28/60 , H01L29/24 , H01L29/41733 , H01L29/42384 , H01L29/78696
Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.
Abstract translation: 目的是提供一种存储器件,其包括可通过具有低截止电流的薄膜晶体管无故障地操作的存储元件。 提供了一种存储器件,其中包括至少一个包括氧化物半导体层的薄膜晶体管的存储元件被布置为矩阵。 包括氧化物半导体层的薄膜晶体管具有高场效应迁移率和低截止电流,因此可以有利地操作而没有问题。 此外,可以降低功耗。 由于存储器件和像素可以形成在一个衬底上,所以这种存储器件在包括氧化物半导体层的薄膜晶体管被设置在显示器件的像素中的情况下是特别有效的。
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公开(公告)号:US09041453B2
公开(公告)日:2015-05-26
申请号:US14221523
申请日:2014-03-21
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Hiroyuki Miyake , Kouhei Toyotaka
CPC classification number: G09G3/3677 , G09G3/3266 , G09G3/3648 , G09G3/3696 , G09G5/18 , G09G2300/0404 , G09G2300/0413 , G09G2310/0205 , G09G2310/0286 , G09G2310/0291 , G11C19/28 , H03K3/356026
Abstract: Two gate drivers each comprising a shift register and a demultiplexer including single conductivity type transistors are provided on left and right sides of a pixel portion. Gate lines are alternately connected to the left-side and right-side gate drivers in every M rows. The shift register includes k first unit circuits connected in cascade. The demultiplexer includes k second unit circuits to each of which a signal is input from the first unit circuit and to each of which M gate lines are connected. The second unit circuit selects one or more wirings which output an input signal from the first unit circuit among M gate lines, and outputs the signal from the first unit circuit to the selected wiring(s). Since gate signals can be output from an output of a one-stage shift register to the M gate lines, the width of the shift register can be narrowed.
Abstract translation: 在像素部分的左侧和右侧设置两个包括移位寄存器和包括单导电型晶体管的解复用器的栅极驱动器。 栅极线在每M行中交替连接到左侧和右侧栅极驱动器。 移位寄存器包括串联连接的k个第一单元电路。 解复用器包括k个第二单位电路,其中每个电路从第一单元电路输入信号,并且连接M个栅极线。 第二单元电路选择在M个栅极线之间输出来自第一单位电路的输入信号的一个或多个布线,并将来自第一单元电路的信号输出到所选择的布线。 由于门信号可以从一级移位寄存器的输出输出到M条栅极线,所以移位寄存器的宽度可以变窄。
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公开(公告)号:US12243459B2
公开(公告)日:2025-03-04
申请号:US18096117
申请日:2023-01-12
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Kouhei Toyotaka , Kazunori Watanabe , Susumu Kawashima , Daisuke Kubota , Tetsuji Ishitani , Akio Yamashita
Abstract: A flip-flop circuit is provided. A driver circuit is provided. The flip-flop circuit includes first to fifth input terminals and first to third output terminals, the first input terminal is supplied with a first trigger signal, the second input terminal is supplied with a second trigger signal, the third input terminal is supplied with a batch selection signal, the fourth input terminal is supplied with a first pulse width modulation signal, and the fifth input terminal is supplied with a second pulse width modulation signal. The first output terminal supplies a first selection signal in response to the first pulse width modulation signal in a period from supply of the first trigger signal to supply of the second trigger signal, the first output terminal supplies the first selection signal in a period during which the batch selection signal is supplied, the second output terminal supplies a second selection signal in response to the second pulse width modulation signal in the period from the supply of the first trigger signal to the supply of the second trigger signal, and the third output terminal supplies a third trigger signal.
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公开(公告)号:US12199106B2
公开(公告)日:2025-01-14
申请号:US18197785
申请日:2023-05-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Kouhei Toyotaka , Jun Koyama , Hiroyuki Miyake
IPC: G11C19/00 , G02F1/1334 , G02F1/1337 , G02F1/1343 , G02F1/1362 , G02F1/1368 , G09G3/20 , G09G3/3233 , G09G3/3258 , G09G3/36 , G11C19/28 , H01L27/12 , H01L29/786 , G09G3/3266 , G09G3/3275
Abstract: A semiconductor device includes first and second transistors having the same conductivity type and a circuit. One of a source and a drain of the first transistor is electrically connected to that of the second transistor. First and third potentials are supplied to the circuit through respective wirings. A second potential and a first clock signal are supplied to the others of the sources and the drains of the first and second transistors, respectively. A second clock signal is supplied to the circuit. The third potential is higher than the second potential which is higher than the first potential. A fourth potential is equal to or higher than the third potential. The first clock signal alternates the second and fourth potentials and the second clock signal alternates the first and third potentials. The circuit controls electrical connections between gates of the first and second transistors and the wirings.
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公开(公告)号:US12170291B2
公开(公告)日:2024-12-17
申请号:US18534908
申请日:2023-12-11
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hisao Ikeda , Kouhei Toyotaka , Hideaki Shishido , Hiroyuki Miyake , Kohei Yokoyama , Yasuhiro Jinbo , Yoshitaka Dozen , Takaaki Nagata , Shinichi Hirasa
IPC: H01L27/12 , G09G3/20 , G09G3/3233 , H01L29/786 , H10K59/131 , H10K59/35 , G09G3/36 , G09G5/391
Abstract: Provided is a display device with extremely high resolution, a display device with higher display quality, a display device with improved viewing angle characteristics, or a flexible display device. Same-color subpixels are arranged in a zigzag pattern in a predetermined direction. In other words, when attention is paid to a subpixel, another two subpixels exhibiting the same color as the subpixel are preferably located upper right and lower right or upper left and lower left. Each pixel includes three subpixels arranged in an L shape. In addition, two pixels are combined so that pixel units including subpixel are arranged in matrix of 3×2.
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公开(公告)号:US11990502B2
公开(公告)日:2024-05-21
申请号:US16638825
申请日:2018-08-10
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Susumu Kawashima , Koji Kusunoki , Kazunori Watanabe , Kouhei Toyotaka , Naoto Kusumoto , Shunpei Yamazaki
IPC: H01L27/32 , G09G3/3275 , H10K50/11 , H10K59/121 , H10K59/131
CPC classification number: H10K59/1213 , G09G3/3275 , H10K50/11 , H10K59/1216 , H10K59/131 , G09G2300/0857 , G09G2310/0251 , G09G2310/0262
Abstract: To provide a display device capable of performing image processing. Each pixel is provided with a memory circuit in which desired correction data is retained. The correction data is generated by calculation in an external device and written to each pixel. The correction data is added to image data by capacitive coupling and supplied to a display element. Thus, the display element can display a corrected image. Through the correction, image upconversion can be performed, or image quality decreased because of variations in pixel transistor characteristics can be corrected.
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公开(公告)号:US11942170B2
公开(公告)日:2024-03-26
申请号:US17749309
申请日:2022-05-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Seiko Amano , Kouhei Toyotaka , Hiroyuki Miyake , Aya Miyazaki , Hideaki Shishido , Koji Kusunoki
CPC classification number: G11C19/28 , G09G3/3677 , G09G3/3696 , G11C19/184 , H01L25/03 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L27/1251 , H01L27/127 , H01L27/1288 , H03K19/0013 , H05K7/02 , G09G2300/0809 , G09G2310/0286 , H01L2924/0002 , H01L2924/0002 , H01L2924/00
Abstract: An object is to provide a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit. A pulse signal output circuit according to one embodiment of the disclosed invention includes first to tenth transistors. The ratio W/L of the channel width W to the channel length L of the first transistor and W/L of the third transistor are each larger than W/L of the sixth transistor. W/L of the fifth transistor is larger than W/L of the sixth transistor. W/L of the fifth transistor is equal to W/L of the seventh transistor. W/L of the third transistor is larger than W/L of the fourth transistor. With such a structure, a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit can be provided.
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公开(公告)号:US11921919B2
公开(公告)日:2024-03-05
申请号:US17671905
申请日:2022-02-15
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Yoshiyuki Kurokawa , Hiromichi Godo , Kouhei Toyotaka , Kazuki Tsuda , Satoru Ohshita , Hidefumi Rikimaru
IPC: G06F3/01 , G02B27/01 , G09G3/00 , G09G3/3225 , H10K59/121 , H01L27/12 , H01L29/786
CPC classification number: G06F3/013 , G02B27/0172 , G09G3/002 , G09G3/3225 , H10K59/1213 , G02B2027/0178 , G09G2354/00 , G09G2360/14 , H01L27/1225 , H01L27/1251 , H01L27/1255 , H01L29/78648 , H01L29/78651 , H01L29/7869
Abstract: To provide a novel electronic device. The electronic device includes a housing and a display device. The display device includes a first layer, a second layer, and a third layer. The first layer, the second layer, and the third layer are provided in different layers. The first layer includes a driver circuit and an arithmetic circuit. The second layer includes pixel circuits and a cell array. The third layer includes light-receiving devices and light-emitting devices. The pixel circuits each have a function of controlling light emission of the light-emitting device. The driver circuit has a function of controlling the pixel circuits. The arithmetic circuit has a function of performing arithmetic processing on the basis of first data corresponding to currents output from the light-receiving devices and second data corresponding to a potential held in the cell array.
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公开(公告)号:US11869453B2
公开(公告)日:2024-01-09
申请号:US17702073
申请日:2022-03-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hiroyuki Miyake , Kouhei Toyotaka , Shunpei Yamazaki
IPC: G09G3/36 , G02F1/1333 , G02F1/1345 , G02F1/1368 , G02F1/1343 , G11C19/28 , H01L27/12
CPC classification number: G09G3/3677 , G02F1/1333 , G02F1/1368 , G02F1/13439 , G02F1/13454 , G11C19/28 , H01L27/124 , H01L27/1222 , G02F1/13685 , G09G2300/0809 , G09G2310/0286 , G09G2310/0291
Abstract: To provide a semiconductor device including a narrowed bezel obtained by designing a gate driver circuit. A gate driver of a display device includes a shift register unit, a demultiplexer circuit, and n signal lines. By connecting the n signal lines for transmitting clock signals to one stage of the shift register unit, (n−3) output signals can be output. The larger n becomes, the smaller the rate of signal lines for transmitting clock signals which do not contribute to output becomes; accordingly, the area of the shift register unit part is small compared to a conventional structure in which one stage of a shift register unit outputs one output signal. Therefore, the gate driver circuit can have a narrow bezel.
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公开(公告)号:US11847942B2
公开(公告)日:2023-12-19
申请号:US17929034
申请日:2021-02-10
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Kouhei Toyotaka , Kiyotaka Kimura
IPC: G09G3/36
CPC classification number: G09G3/3666 , G09G3/3659 , G09G3/3688 , G09G2300/0828 , G09G2310/027
Abstract: A semiconductor device using a pass transistor is provided. The semiconductor device includes a first circuit, a second circuit, a plurality of input terminals, and an output terminal. The first circuit includes a plurality of first transistors functioning as pass transistors, and the second circuit includes a plurality of second transistors functioning as pass transistors. Note that the number of the first transistors is larger than the number of the second transistors, a gate of the first transistor is supplied with a first signal, and a gate of the second transistor is supplied with a second signal. The first circuit is supplied with grayscale signals through x input terminals, and the first circuit selects y grayscale signals of the grayscale signals with the first signal. The second circuit is supplied with y (y
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