公开(公告)号：US08815331B2

公开(公告)日：2014-08-26

申请号：US13449396

申请日：2012-04-18

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Takeshi Fukunaga

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Takeshi Fukunaga

IPC分类号： C23C14/56 ,  C23C14/24 ,  C23C14/04 ,  C23C14/12 ,  C23C14/54

CPC分类号： C23C14/564 ,  C23C14/04 ,  C23C14/12 ,  C23C14/243 ,  C23C14/54

摘要： A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.

摘要翻译： 提供了一种清除附着在不暴露于大气中的设备的气相沉积材料的方法。 将附着在设置在成膜室上的设备（成膜装置的部件）如基板保持器，蒸镀掩模，掩模保持器或防粘附屏蔽物的气相沉积材料进行热处理 。 因此，附着的气相沉积材料被重新升华，并通过真空泵通过排气除去。 通过在制造电光装置的步骤中包括这种清洁方法，缩短了制造步骤，并且可以实现具有高可靠性的电光装置。

公开(公告)号：US08811064B2

公开(公告)日：2014-08-19

申请号：US13344921

申请日：2012-01-06

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura

IPC分类号： G11C11/24

CPC分类号： H01L27/10808 ,  G11C5/10 ,  G11C11/401 ,  G11C11/4085 ,  H01L21/84 ,  H01L23/528 ,  H01L23/53228 ,  H01L27/0688 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/10882 ,  H01L27/10897 ,  H01L27/1207 ,  H01L28/91 ,  H01L29/7869

摘要： The memory capacity of a DRAM is enhanced. A semiconductor memory device includes a driver circuit including part of a single crystal semiconductor substrate, a multilayer wiring layer provided over the driver circuit, and a memory cell array layer provided over the multilayer wiring layer. That is, the memory cell array overlaps with the driver circuit. Accordingly, the integration degree of the semiconductor memory device can be increased as compared to the case where a driver circuit and a memory cell array are provided in the same plane of a substrate containing a singe crystal semiconductor material.

摘要翻译： DRAM的存储器容量增强。 半导体存储器件包括：驱动器电路，其包括单晶半导体衬底的一部分，设置在驱动电路上的多层布线层;以及设置在多层布线层上的存储单元阵列层。 也就是说，存储单元阵列与驱动电路重叠。 因此，与在含有单晶体半导体材料的基板的同一平面上设置驱动电路和存储单元阵列的情况相比，可以提高半导体存储器件的集成度。

公开(公告)号：US08809992B2

公开(公告)日：2014-08-19

申请号：US13356012

申请日：2012-01-23

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Toshihiko Saito ,  Takehisa Hatano ,  Hideomi Suzawa ,  Shinya Sasagawa ,  Junichi Koezuka ,  Yuichi Sato ,  Shinji Ohno

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Toshihiko Saito ,  Takehisa Hatano ,  Hideomi Suzawa ,  Shinya Sasagawa ,  Junichi Koezuka ,  Yuichi Sato ,  Shinji Ohno

IPC分类号： H01L29/786

CPC分类号： H01L29/66969 ,  H01L21/02488 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869

摘要： A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.

摘要翻译： 提供了包括氧化物半导体并且具有良好的电特性的半导体器件。 在半导体器件中，在衬底上形成氧化物半导体膜和绝缘膜。 氧化物半导体膜的侧面与绝缘膜接触。 氧化物半导体膜包括沟道形成区域和包含掺杂剂的区域，沟道形成区域夹在其间。 栅极绝缘膜与氧化物半导体膜形成并接触。 在栅绝缘膜上形成具有侧壁绝缘膜的栅电极。 源电极和漏电极形成为与氧化物半导体膜和绝缘膜接触。

公开(公告)号：US08809841B2

公开(公告)日：2014-08-19

申请号：US13303637

申请日：2011-11-23

申请人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Harue Osaka ,  Masahiro Takahashi

发明人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Harue Osaka ,  Masahiro Takahashi

IPC分类号： H01L51/50

CPC分类号： H01L51/5012 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/5016 ,  H01L51/506 ,  H01L51/5203 ,  H01L2251/558

摘要： A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided.

摘要翻译： 至少包括具有荧光发光性的发光中心材料的单分子层的发光元件和包含载体（电子或空穴） - 传输特性的主体材料和带隙大于的带隙的单分子层 在一对电极之间的发光中心材料的带隙（注意，带隙是指HOMO能级和LUMO能级之间的能量差），其中包括主体材料的单分子层和包括主体材料的单分子层 发光中心材料共享相同的界面。

公开(公告)号：US08809133B2

公开(公告)日：2014-08-19

申请号：US13338366

申请日：2011-12-28

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Tamae Takano

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Tamae Takano

IPC分类号： H01L21/84

CPC分类号： H01L29/04 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675

摘要： There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain a crystalline semiconductor thin film. After the crystalline semiconductor thin film is irradiated with ultraviolet light or infrared light, a heat treatment at a temperature of 900 to 1200° C. is carried out in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.

摘要翻译： 提供了形成单晶半导体薄膜或基本单晶半导体薄膜的技术。 将非晶半导体薄膜的促进结晶化的催化剂元素添加到非晶半导体薄膜中，进行热处理，得到结晶半导体薄膜。 在用紫外线或红外线照射结晶半导体薄膜之后，在还原气氛中进行900〜1200℃的热处理。 结晶半导体薄膜的表面通过该工序极其平坦化，晶粒和晶界的缺陷消失，得到单晶半导体薄膜或大致单晶半导体薄膜。

公开(公告)号：US08802185B2

公开(公告)日：2014-08-12

申请号：US12472562

申请日：2009-05-27

申请人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hisao Ikeda ,  Satoshi Seo

发明人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hisao Ikeda ,  Satoshi Seo

IPC分类号： B05D5/12

CPC分类号： H01L51/0005 ,  H01L27/3211 ,  H01L51/56

摘要： An object is to provide a deposition method for smoothly obtaining desired pattern shapes of material layers and a method for manufacturing a light-emitting device while throughput is improved when a plurality of different material layers is stacked on a substrate. A material layer is selectively formed in advance in a position overlapped with a light absorption layer over a first substrate by pump feeding. Three kinds of light-emitting layers are deposited on one deposition substrate. This first substrate and a second substrate that is to be a deposition target substrate are arranged to face each other, and the light absorption layer is heated by being irradiated with light, whereby a film is deposited on the second substrate. Three kinds of light-emitting layers can be deposited with positional accuracy by performing only one position alignment before light irradiation.

摘要翻译： 本发明的目的是提供一种用于平滑地获得材料层的期望图案形状的沉积方法，以及当多个不同的材料层堆叠在基底上时，提高生产能力的方法。 预先在与第一基板上的光吸收层重叠的位置通过泵送来选择性地形成材料层。 在一个沉积衬底上沉积三种发光层。 该第一基板和作为沉积靶基板的第二基板被布置为彼此面对，并且通过照射光来加热光吸收层，由此在第二基板上沉积膜。 可以通过在光照射之前仅进行一个位置对准来以位置精度沉积三种发光层。

公开(公告)号：US08797142B2

公开(公告)日：2014-08-05

申请号：US12754416

申请日：2010-04-05

申请人： Jun Koyama ,  Kiyoshi Kato ,  Shunpei Yamazaki

发明人： Jun Koyama ,  Kiyoshi Kato ,  Shunpei Yamazaki

IPC分类号： H04Q5/22

CPC分类号： H04W52/028 ,  Y02D70/122 ,  Y02D70/166

摘要： An object is to provide a data processing device which achieves multiple functions or easy additional providing of a function while suppressing adverse influence on a communication distance or to improve resistance to electrostatic discharge in the data processing device. The data processing device includes an antenna which transmits and receives a first signal to/from a first terminal device through wireless communication, an integrated circuit which executes a process in accordance with the first signal, and a terminal portion which transmits and receives a second signal to/from a second terminal device and has an exposed conductive portion on its surface. A protection circuit is provided between at least one terminal of terminals of the terminal portion and a power supply terminal of a high potential and between the one terminal and a power supply terminal of a low potential.

摘要翻译： 本发明的目的是提供一种能够实现多种功能的数据处理装置，或容易地附加提供功能，同时抑制对通信距离的不利影响或提高数据处理装置中的静电放电的抵抗力。 数据处理装置包括通过无线通信向第一终端装置发送第一信号的接收天线，执行与第一信号对应的处理的集成电路以及发送接收第二信号的终端部 到/从第二终端设备，并且在其表面上具有暴露的导电部分。 在端子部分的端子的至少一个端子和高电位的电源端子之间以及在一个端子和低电位的电源端子之间提供保护电路。

公开(公告)号：US08790938B2

公开(公告)日：2014-07-29

申请号：US11953356

申请日：2007-12-10

申请人： Shunpei Yamazaki ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Toru Takayama

IPC分类号： H01L33/00

CPC分类号： H01L51/5253 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/0097 ,  H01L51/5016 ,  H01L51/5056 ,  H01L51/5088 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5259 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/301 ,  H01L2251/303 ,  H01L2251/5338 ,  H01L2251/558

摘要： An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT (1201) and an organic light emitting element (1202) are formed on the same substrate (1203) as structuring elements of a light emitting device (1200). A first insulating film (1205) which functions as a blocking layer is formed on the substrate (1203) side of the TFT (1201), and a second insulating film (1206) is formed on the opposite upper layer side as a protective film. In addition, a third insulating film (1207) which functions as a barrier film is formed on the lower layer side of the organic light emitting element (1202). The third insulating film (1207) is formed by an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, an aluminum nitride film, an aluminum oxide film, or an aluminum oxynitride film. A fourth insulating film (1208) and a partitioning layer (1209) formed on the upper layer side of the organic light emitting element (1202) are formed using similar inorganic insulating films.

摘要翻译： 目的是提高通过组合TFT和有机发光元件而构成的发光器件的可靠性。 在与发光器件（1200）的结构元件相同的衬底（1203）上形成TFT（1201）和有机发光元件（1202）。 在TFT（1201）的基板（1203）侧形成有用作阻挡层的第一绝缘膜（1205），在相对的上层侧形成作为保护膜的第二绝缘膜（1206）。 此外，在有机发光元件（1202）的下层侧形成用作阻挡膜的第三绝缘膜（1207）。 第三绝缘膜（1207）由诸如氮化硅膜，氮氧化硅膜，氮化铝膜，氧化铝膜或氮氧化铝膜的无机绝缘膜形成。 使用类似的无机绝缘膜形成在有机发光元件（1202）的上层侧上形成的第四绝缘膜（1208）和分隔层（1209）。

公开(公告)号：US08785949B2

公开(公告)日：2014-07-22

申请号：US13417362

申请日：2012-03-12

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

IPC分类号： H01L27/15 ,  H01L29/267 ,  H01L31/12

CPC分类号： H01L27/3244 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3258 ,  H01L29/16 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/5008 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/566

摘要： The light-emitting apparatus comprising thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer on the upper and side surfaces of the second organic insulation layer and having an opening over the anode, an organic compound layer in contact with the anode and the fourth inorganic insulation layer and containing light-emitting material, and a cathode in contact with the organic compound layer, wherein the third and the fourth inorganic insulation layers comprise silicon nitride or aluminum nitride.

摘要翻译： 包括薄膜晶体管和发光元件的发光装置包括： 栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，第三无机绝缘层上的阳极，与第三有机绝缘层重叠的第二有机绝缘层 阳极的端部具有35度至45度的倾斜角度，在第二有机绝缘层的上表面和侧表面上的第四无机绝缘层，并且在阳极上具有开口，与阳极接触的有机化合物层 和第四无机绝缘层并含有发光材料，以及与有机化合物层接触的阴极，其中第三和第四无机绝缘层包括氮化硅或氮化铝。

公开(公告)号：US08772128B2

公开(公告)日：2014-07-08

申请号：US12246577

申请日：2008-10-07

申请人： Shunpei Yamazaki ,  Junpei Momo ,  Fumito Isaka ,  Eiji Higa ,  Masaki Koyama ,  Akihisa Shimomura

发明人： Shunpei Yamazaki ,  Junpei Momo ,  Fumito Isaka ,  Eiji Higa ,  Masaki Koyama ,  Akihisa Shimomura

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  B23K26/03 ,  B23K26/083 ,  B23K26/12 ,  B23K26/127 ,  B23K26/14 ,  H01L21/268 ,  H01L21/3247 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/66772

摘要： A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.

摘要翻译： 照射通过激发氢气产生的离子并用离子掺杂装置加速的单晶半导体衬底，从而形成含有大量氢的损伤区域。 在单晶半导体衬底和支撑衬底接合之后，单晶半导体衬底被加热以沿着损伤区域分离。 当与单晶半导体衬底分离的单晶半导体层被加热时，用激光束照射该单晶半导体层。 单晶半导体层通过激光束照射熔融而进行再单晶化，从而回收其结晶性并使单晶半导体层的表面平坦化。