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    Semiconductor structure
    81.
    发明授权
    Semiconductor structure 有权
    半导体结构

    公开(公告)号：US09508715B1

    公开(公告)日：2016-11-29

    申请号：US14817217

    申请日：2015-08-04

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Li-Wei Feng ,  Chien-Ting Lin ,  Shih-Hung Tsai ,  Ssu-I Fu ,  Hon-Huei Liu ,  Jyh-Shyang Jenq

    IPC: H01L27/088 ,  H01L21/8234

    CPC classification number: H01L27/0886 ,  H01L21/823425 ,  H01L21/823431

    Abstract: The present invention provides a semiconductor structure including a substrate, having a recess disposed thereon. Two first protruding portions are disposed on two sides of the recess respectively, an epitaxial layer is disposed in the recess, and an insulating layer is disposed on the substrate. A top portion of the first protruding portion is higher than a top surface of the insulating layer.

    Abstract translation: 本发明提供一种包括基板的半导体结构，其上设置有凹部。 两个第一突出部分分别设置在凹槽的两侧，外延层设置在凹槽中，绝缘层设置在基板上。 第一突出部的顶部高于绝缘层的顶面。

    STATIC RANDOM ACCESS MEMORY
    83.
    发明申请
    STATIC RANDOM ACCESS MEMORY 有权
    静态随机存取存储器

    公开(公告)号：US20160322366A1

    公开(公告)日：2016-11-03

    申请号：US14724775

    申请日：2015-05-28

    Applicant: United Microelectronics Corp.

    Inventor： Chih-Kai Hsu ,  Chao-Hung Lin ,  Yu-Hsiang Hung ,  Ssu-I Fu ,  Jyh-Shyang Jenq

    IPC: H01L27/11 ,  H01L27/02

    CPC classification number: H01L27/1104 ,  H01L27/0207

    Abstract: A static random access memory (SRAM) is disclosed. The SRAM includes a plurality of SRAM cells on a substrate, in which each of the SRAM cells comprises: a gate structure on the substrate; a first interlayer dielectric (ILD) layer around the gate structure; a first contact plug in the first ILD layer; a second ILD layer on the first ILD layer; and a second contact plug in the second ILD layer and electrically connected to the first contact plug.

    Abstract translation: 公开了一种静态随机存取存储器（SRAM）。 SRAM包括在衬底上的多个SRAM单元，其中每个SRAM单元包括：衬底上的栅极结构; 围绕栅极结构的第一层间电介质（ILD）层; 第一ILD层中的第一接触插塞; 第一ILD层上的第二ILD层; 以及在所述第二ILD层中的第二接触插塞，并且电连接到所述第一接触插塞。

    Method for fabricating semiconductor device
    84.
    发明授权
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US09455194B1

    公开(公告)日：2016-09-27

    申请号：US14864852

    申请日：2015-09-24

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Li-Wei Feng ,  Chien-Ting Lin ,  Shih-Hung Tsai ,  Ssu-I Fu ,  Hon-Huei Liu ,  Shih-Fang Hong ,  Chao-Hung Lin ,  Jyh-Shyang Jenq

    IPC: H01L21/461 ,  H01L21/8234 ,  H01L21/3065 ,  H01L21/308

    CPC classification number: H01L21/823412 ,  H01L21/3086 ,  H01L21/823431

    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region and a second region defined thereon; forming a material layer on the substrate; forming a plurality of first mandrels on the material layer of the first region and the second region; forming first spacers adjacent to the first mandrels; forming a hard mask on the first region; trimming the first spacers on the second region; removing the first mandrels; using the first spacers to remove part of the material layer for forming a plurality of second mandrels; forming second spacers adjacent to the second mandrels; removing the second mandrels; and using the second spacers to remove part of the substrate for forming a plurality of fin-shaped structures.

    Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供具有限定在其上的第一区域和第二区域的衬底; 在所述基板上形成材料层; 在所述第一区域和所述第二区域的材料层上形成多个第一心轴; 形成与所述第一心轴相邻的第一间隔件; 在第一区域上形成硬掩模; 修剪第二区域上的第一间隔物; 去除第一个心轴; 使用所述第一间隔件去除用于形成多个第二心轴的所述材料层的一部分; 形成与所述第二心轴相邻的第二间隔件; 移除第二个心轴; 并且使用第二间隔件去除用于形成多个鳍状结构的基板的一部分。

    METHOD OF FORMING TRENCHES
    86.
    发明申请
    METHOD OF FORMING TRENCHES 有权
    形成倾角的方法

    公开(公告)号：US20160203982A1

    公开(公告)日：2016-07-14

    申请号：US14636200

    申请日：2015-03-03

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chao-Hung Lin ,  Shih-Fang Hong ,  Li-Wei Feng ,  Shih-Hung Tsai ,  Ssu-I Fu ,  Jyh-Shyang Jenq

    IPC: H01L21/033 ,  H01L21/311

    CPC classification number: H01L21/3086 ,  H01L21/3081

    Abstract: The present invention provides a method for forming trenches. First, a mandrel layer is formed on a substrate, wherein the mandrel layer comprises a stop layer and a sacrificial layer. A spacer is formed on at least a sidewall of the mandrel layer, following by forming a material layer on the substrate for covering the spacer and the mandrel layer. After performing a removing process to remove apart of the material layer, apart of the spacer and the sacrificial layer; the spacer is removed to form at least one first trench in the remaining material layer and the mandrel.

    Abstract translation: 本发明提供一种形成沟槽的方法。 首先，在基板上形成心轴层，其中心轴层包括停止层和牺牲层。 在心轴层的至少一个侧壁上形成间隔物，然后在衬底上形成用于覆盖间隔物和心轴层的材料层。 在执行去除处理以除去材料层之外的间隔物和牺牲层的间隔; 去除间隔物以在剩余材料层和心轴中形成至少一个第一沟槽。

    Method of forming trenches
    87.
    发明授权
    Method of forming trenches 有权
    形成沟槽的方法

    公开(公告)号：US09384978B1

    公开(公告)日：2016-07-05

    申请号：US14636200

    申请日：2015-03-03

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chao-Hung Lin ,  Shih-Fang Hong ,  Li-Wei Feng ,  Shih-Hung Tsai ,  Ssu-I Fu ,  Jyh-Shyang Jenq

    IPC: H01L21/76 ,  H01L21/033 ,  H01L21/311

    CPC classification number: H01L21/3086 ,  H01L21/3081

    Abstract: The present invention provides a method for forming trenches. First, a mandrel layer is formed on a substrate, wherein the mandrel layer comprises a stop layer and a sacrificial layer. A spacer is formed on at least a sidewall of the mandrel layer, following by forming a material layer on the substrate for covering the spacer and the mandrel layer. After performing a removing process to remove apart of the material layer, apart of the spacer and the sacrificial layer; the spacer is removed to form at least one first trench in the remaining material layer and the mandrel.

    Abstract translation: 本发明提供一种形成沟槽的方法。 首先，在基板上形成心轴层，其中心轴层包括停止层和牺牲层。 在心轴层的至少一个侧壁上形成间隔物，然后在衬底上形成用于覆盖间隔物和心轴层的材料层。 在执行去除处理以除去材料层之外的间隔物和牺牲层的间隔; 去除间隔物以在剩余材料层和心轴中形成至少一个第一沟槽。

    Static random access memory
    88.
    发明授权
    Static random access memory 有权
    静态随机存取存储器

    公开(公告)号：US09379119B1

    公开(公告)日：2016-06-28

    申请号：US14749623

    申请日：2015-06-24

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chun-Hsien Huang ,  Yu-Tse Kuo ,  Shu-Ru Wang ,  Yu-Hsiang Hung ,  Ssu-I Fu ,  Chih-Kai Hsu ,  Jyh-Shyang Jenq

    IPC: H01L23/48 ,  H01L27/11 ,  H01L23/522 ,  H01L23/528 ,  H01L27/088 ,  H01L27/02 ,  H01L27/092

    CPC classification number: H01L27/1104 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/0924

    Abstract: A static random access memory (SRAM) is disclosed. The SRAM includes a plurality of SRAM cells on a substrate, in which each of the SRAM cells further includes: a gate structure on the substrate, a plurality of fin structures disposed on the substrate, where each fin structure is arranged perpendicular to the arrangement direction of the gate structure, a first interlayer dielectric (ILD) layer around the gate structure, a first contact plug in the first ILD layer, where the first contact plug is strip-shaped and contacts two different fin structures; and a second ILD layer on the first ILD layer.

    Abstract translation: 公开了一种静态随机存取存储器（SRAM）。 SRAM包括在衬底上的多个SRAM单元，其中每个SRAM单元还包括：衬底上的栅极结构，设置在衬底上的多个鳍结构，其中每个鳍结构垂直于排列方向排列 栅极结构周围的第一层间电介质（ILD）层，第一ILD层中的第一接触插塞，其中第一接触插塞为带状并接触两个不同的翅片结构; 和第一ILD层上的第二ILD层。

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