公开(公告)号：US20170178972A1

公开(公告)日：2017-06-22

申请号：US15447126

申请日：2017-03-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Yu Chang ,  Li-Wei Feng ,  Shih-Hung Tsai ,  Ssu-I Fu ,  Jyh-Shyang Jenq ,  Chien-Ting Lin ,  Yi-Ren Chen ,  Shou-Wei Hsieh ,  Hsin-Yu Chen ,  Chun-Hao Lin

IPC: H01L21/8238 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/823821 ,  H01L21/02129 ,  H01L21/324 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823878 ,  H01L29/66803

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a fin-shaped structure thereon and a shallow trench isolation (STI) around the fin-shaped structure, in which the fin-shaped structure has a top portion and a bottom portion; forming a first doped layer on the STI and the top portion; and performing a first anneal process.

公开(公告)号：US09627268B2

公开(公告)日：2017-04-18

申请号：US14884746

申请日：2015-10-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Yu Chang ,  Li-Wei Feng ,  Shih-Hung Tsai ,  Ssu-I Fu ,  Jyh-Shyang Jenq ,  Chien-Ting Lin ,  Yi-Ren Chen ,  Shou-Wei Hsieh ,  Hsin-Yu Chen ,  Chun-Hao Lin

IPC: H01L21/8238 ,  H01L21/324

CPC classification number: H01L21/823821 ,  H01L21/02129 ,  H01L21/324 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823878

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon and a shallow trench isolation (STI) around the fin-shaped structure, in which the fin-shaped structure has a top portion and a bottom portion; forming a first doped layer on the STI and the top portion; and performing a first anneal process.

公开(公告)号：US20170033015A1

公开(公告)日：2017-02-02

申请号：US15293292

申请日：2016-10-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Li-Wei Feng ,  Shih-Hung Tsai ,  Hon-Huei Liu ,  Chao-Hung Lin ,  Nan-Yuan Huang ,  Jyh-Shyang Jenq

IPC: H01L21/8234 ,  H01L29/423 ,  H01L21/308 ,  H01L27/088

CPC classification number: H01L21/823431 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/823481 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/092 ,  H01L29/0649 ,  H01L29/165 ,  H01L29/42372 ,  H01L29/7842 ,  H01L29/785

Abstract: The present invention provides a method for forming a semiconductor structure, comprising: firstly, a substrate is provided, having a first fin structure and a second fin structure disposed thereon, next, a first isolation region is formed between the first fin structure and the second fin structure, a second isolation region is formed opposite the first fin structure from the first isolation region, and at least an epitaxial layer is formed on the side of the first fin structure and the second fin structure, wherein the epitaxial layer has a bottom surface, the bottom surface extending from the first fin structure to the second fin structure, and the bottom surface is lower than a bottom surface of the first isolation region and a top surface of the second isolation region, in addition, the epitaxial layer has a stepped-shaped sidewall profile.

Abstract translation: 本发明提供一种半导体结构的形成方法，其特征在于，首先，设置具有第一鳍结构和设置在其上的第二鳍结构的衬底，接着，在所述第一鳍结构和所述第二鳍结构之间形成第一隔离区 鳍结构，与第一隔离区相对地形成第二隔离区，并且在第一鳍结构和第二鳍结构的一侧形成至少外延层，其中外延层具有底表面 所述底表面从所述第一鳍结构延伸到所述第二鳍结构，并且所述底表面低于所述第一隔离区域的底表面和所述第二隔离区域的顶表面，此外，所述外延层具有阶梯状 形侧壁轮廓。

公开(公告)号：US09508715B1

公开(公告)日：2016-11-29

申请号：US14817217

申请日：2015-08-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Li-Wei Feng ,  Chien-Ting Lin ,  Shih-Hung Tsai ,  Ssu-I Fu ,  Hon-Huei Liu ,  Jyh-Shyang Jenq

IPC: H01L27/088 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/823425 ,  H01L21/823431

Abstract: The present invention provides a semiconductor structure including a substrate, having a recess disposed thereon. Two first protruding portions are disposed on two sides of the recess respectively, an epitaxial layer is disposed in the recess, and an insulating layer is disposed on the substrate. A top portion of the first protruding portion is higher than a top surface of the insulating layer.

Abstract translation: 本发明提供一种包括基板的半导体结构，其上设置有凹部。 两个第一突出部分分别设置在凹槽的两侧，外延层设置在凹槽中，绝缘层设置在基板上。 第一突出部的顶部高于绝缘层的顶面。

公开(公告)号：US09502252B2

公开(公告)日：2016-11-22

申请号：US14637400

申请日：2015-03-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Li-Wei Feng ,  Shih-Hung Tsai ,  Chao-Hung Lin ,  Hon-Huei Liu ,  Shih-Fang Hong ,  Jyh-Shyang Jenq

IPC: H01L21/225 ,  H01L21/8238 ,  H01L21/324 ,  H01L27/092

CPC classification number: H01L21/823821 ,  H01L21/2255 ,  H01L21/2256 ,  H01L21/324 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823892 ,  H01L27/0924 ,  H01L29/66803 ,  H01L29/7851

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least one fin-shaped structure thereon, in which the fin-shaped structure comprises a top portion and a bottom portion; and forming a doped layer and a first liner around the bottom portion of the fin-shaped structure.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供其上具有至少一个鳍状结构的基底，其中鳍状结构包括顶部和底部; 以及围绕所述鳍状结构的底部部分形成掺杂层和第一衬垫。

公开(公告)号：US09455194B1

公开(公告)日：2016-09-27

申请号：US14864852

申请日：2015-09-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Li-Wei Feng ,  Chien-Ting Lin ,  Shih-Hung Tsai ,  Ssu-I Fu ,  Hon-Huei Liu ,  Shih-Fang Hong ,  Chao-Hung Lin ,  Jyh-Shyang Jenq

IPC: H01L21/461 ,  H01L21/8234 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/823412 ,  H01L21/3086 ,  H01L21/823431

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region and a second region defined thereon; forming a material layer on the substrate; forming a plurality of first mandrels on the material layer of the first region and the second region; forming first spacers adjacent to the first mandrels; forming a hard mask on the first region; trimming the first spacers on the second region; removing the first mandrels; using the first spacers to remove part of the material layer for forming a plurality of second mandrels; forming second spacers adjacent to the second mandrels; removing the second mandrels; and using the second spacers to remove part of the substrate for forming a plurality of fin-shaped structures.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供具有限定在其上的第一区域和第二区域的衬底; 在所述基板上形成材料层; 在所述第一区域和所述第二区域的材料层上形成多个第一心轴; 形成与所述第一心轴相邻的第一间隔件; 在第一区域上形成硬掩模; 修剪第二区域上的第一间隔物; 去除第一个心轴; 使用所述第一间隔件去除用于形成多个第二心轴的所述材料层的一部分; 形成与所述第二心轴相邻的第二间隔件; 移除第二个心轴; 并且使用第二间隔件去除用于形成多个鳍状结构的基板的一部分。

公开(公告)号：US20160247678A1

公开(公告)日：2016-08-25

申请号：US14629491

申请日：2015-02-24

Applicant: United Microelectronics Corp.

Inventor： Li-Wei Feng ,  Shih-Hung Tsai ,  Chao-Hung Lin ,  Hon-Huei Liu ,  An-Chi Liu ,  Chih-Wei Wu ,  Jyh-Shyang Jenq ,  Shih-Fang Hong ,  En-Chiuan Liou ,  Ssu-I Fu ,  Yu-Hsiang Hung ,  Chih-Kai Hsu ,  Mei-Chen Chen ,  Chia-Hsun Tseng

IPC: H01L21/033 ,  H01L21/66

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/823431 ,  H01L22/12

Abstract: A method of forming a semiconductor structure includes following steps. First of all, a patterned hard mask layer having a plurality of mandrel patterns is provided. Next, a plurality of first mandrels is formed on a substrate through the patterned hard mask. Following these, at least one sidewall image transferring (SIT) process is performed. Finally, a plurality of fins is formed in the substrate, wherein each of the fins has a predetermined critical dimension (CD), and each of the mandrel patterns has a CD being 5-8 times greater than the predetermined CD.

Abstract translation: 形成半导体结构的方法包括以下步骤。 首先，提供具有多个心轴图案的图案化的硬掩模层。 接下来，通过图案化的硬掩模在基板上形成多个第一心轴。 接下来，执行至少一个侧壁图像传送（SIT）处理。 最后，在基板上形成多个散热片，其中每个翅片具有预定的临界尺寸（CD），并且每个心轴图案具有比预定CD大5-8倍的CD。

公开(公告)号：US20160203982A1

公开(公告)日：2016-07-14

申请号：US14636200

申请日：2015-03-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chao-Hung Lin ,  Shih-Fang Hong ,  Li-Wei Feng ,  Shih-Hung Tsai ,  Ssu-I Fu ,  Jyh-Shyang Jenq

IPC: H01L21/033 ,  H01L21/311

CPC classification number: H01L21/3086 ,  H01L21/3081

Abstract: The present invention provides a method for forming trenches. First, a mandrel layer is formed on a substrate, wherein the mandrel layer comprises a stop layer and a sacrificial layer. A spacer is formed on at least a sidewall of the mandrel layer, following by forming a material layer on the substrate for covering the spacer and the mandrel layer. After performing a removing process to remove apart of the material layer, apart of the spacer and the sacrificial layer; the spacer is removed to form at least one first trench in the remaining material layer and the mandrel.

Abstract translation: 本发明提供一种形成沟槽的方法。 首先，在基板上形成心轴层，其中心轴层包括停止层和牺牲层。 在心轴层的至少一个侧壁上形成间隔物，然后在衬底上形成用于覆盖间隔物和心轴层的材料层。 在执行去除处理以除去材料层之外的间隔物和牺牲层的间隔; 去除间隔物以在剩余材料层和心轴中形成至少一个第一沟槽。

公开(公告)号：US09384978B1

公开(公告)日：2016-07-05

申请号：US14636200

申请日：2015-03-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chao-Hung Lin ,  Shih-Fang Hong ,  Li-Wei Feng ,  Shih-Hung Tsai ,  Ssu-I Fu ,  Jyh-Shyang Jenq

IPC: H01L21/76 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/3086 ,  H01L21/3081

Abstract: The present invention provides a method for forming trenches. First, a mandrel layer is formed on a substrate, wherein the mandrel layer comprises a stop layer and a sacrificial layer. A spacer is formed on at least a sidewall of the mandrel layer, following by forming a material layer on the substrate for covering the spacer and the mandrel layer. After performing a removing process to remove apart of the material layer, apart of the spacer and the sacrificial layer; the spacer is removed to form at least one first trench in the remaining material layer and the mandrel.

Abstract translation: 本发明提供一种形成沟槽的方法。 首先，在基板上形成心轴层，其中心轴层包括停止层和牺牲层。 在心轴层的至少一个侧壁上形成间隔物，然后在衬底上形成用于覆盖间隔物和心轴层的材料层。 在执行去除处理以除去材料层之外的间隔物和牺牲层的间隔; 去除间隔物以在剩余材料层和心轴中形成至少一个第一沟槽。

公开(公告)号：US09318334B2

公开(公告)日：2016-04-19

申请号：US14469606

申请日：2014-08-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Hsiang Hung ,  Ssu-I Fu ,  Shih-Hung Tsai ,  Jyh-Shyang Jenq ,  Chih-Kai Hsu

IPC: H01L21/336 ,  H01L21/28 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/78 ,  H01L27/092 ,  H01L21/308

CPC classification number: H01L21/28132 ,  H01L21/0337 ,  H01L21/28035 ,  H01L21/28158 ,  H01L21/3086 ,  H01L21/32139 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region and a second region defined thereon; forming a plurality of fin-shaped structures on the substrate; forming a gate layer on the fin-shaped structures; forming a material layer on the gate layer; patterning the material layer for forming sacrificial mandrels on the gate layer in the first region; forming sidewall spacers adjacent to the sacrificial mandrels; removing the sacrificial mandrels; forming a patterned mask on the second region; and utilizing the patterned mask and the sidewall spacers to remove part of the gate layer.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供具有限定在其上的第一区域和第二区域的衬底; 在所述基板上形成多个鳍状结构; 在鳍状结构上形成栅极层; 在栅极层上形成材料层; 图案化用于在第一区域中的栅极层上形成牺牲心轴的材料层; 形成与牺牲心轴相邻的侧壁间隔物; 去除牺牲心轴; 在所述第二区域上形成图案化掩模; 并且利用图案化掩模和侧壁间隔物去除栅极层的一部分。