公开(公告)号：US07221400B2

公开(公告)日：2007-05-22

申请号：US10347875

申请日：2003-01-22

申请人： Hidekazu Takahashi ,  Kazuhiro Saito

发明人： Hidekazu Takahashi ,  Kazuhiro Saito

IPC分类号： H04N5/235

CPC分类号： H04N5/2351 ,  H04N5/23212

摘要： An image pickup apparatus including a first photoelectric conversion circuit that has a photoelectric conversion area and is used for performing focus adjustment; a second photoelectric conversion circuit that has a photoelectric conversion area and is used for performing exposure amount adjustment; and a control circuit for controlling a power supply such that power is supplied to the first photoelectric conversion circuit and the second photoelectric conversion circuit independently, in which the first photoelectric conversion circuit and the second photoelectric conversion circuit are formed on a same semiconductor substrate.

摘要翻译： 一种图像拾取装置，包括具有光电转换区域并用于进行焦点调整的第一光电转换电路; 具有光电转换区域并用于进行曝光量调整的第二光电转换电路; 以及用于控制电源的控制电路，使得在同一半导体衬底上形成第一光电转换电路和第二光电转换电路的电源被独立地提供给第一光电转换电路和第二光电转换电路。

公开(公告)号：US20070107827A1

公开(公告)日：2007-05-17

申请号：US11591776

申请日：2006-11-01

申请人： Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： B32B41/00 ,  B32B37/00 ,  B32B38/00

CPC分类号： B32B41/00 ,  B32B2309/12 ,  B32B2309/72 ,  B32B2519/02 ,  H01L21/67144 ,  H01L21/6835 ,  H01L24/75 ,  H01L24/83 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2224/2919 ,  H01L2224/838 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01054 ,  H01L2924/0106 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01028

摘要： The substrate is placed over a pressure detection film, the element group is placed selectively over the substrate so that a conductive film functioning as an antenna formed over the substrate and a conductive film functioning as a bump formed over the element group overlap each other, the substrate and the element group are pressure-bonded to each other by applying pressure to the substrate and the element group so that the conductive film formed over the substrate and the conductive film functioning as a bump formed over the element group are electrically connected to each other, a value and distribution of pressure applied to the element group at the time of the pressure bonding are detected by the pressure detection film, and the pressure applied at the time of the pressure bonding is controlled, based on the detected pressure value and pressure distribution.

摘要翻译： 将衬底放置在压力检测膜上，将元件组选择性地放置在衬底上，使得用作形成在衬底上的天线的导电膜和用作形成在元件组上的凸块的导电膜彼此重叠， 基板和元件组通过向基板和元件组施加压力而相互压合，使得形成在基板上的导电膜和用作形成在元件组上的凸块的导电膜彼此电连接 通过压力检测膜检测在压接时施加到元件组的压力的值和分布，并且基于检测到的压力值和压力分布来控制压接时施加的压力 。

公开(公告)号：US20070070230A1

公开(公告)日：2007-03-29

申请号：US11559948

申请日：2006-11-15

申请人： Hidekazu Takahashi

发明人： Hidekazu Takahashi

IPC分类号： H04N5/335

CPC分类号： H01L31/11 ,  H01L27/14643

摘要： A solid state image pickup device is provided which can reduce crosstalks between range finding photoelectric conversion elements (AF sensor) and photometry photoelectric conversion elements (AE sensor). The solid state image pickup device has an n-type epitaxial semiconductor region, a p-type first well region formed in the semiconductor region, a p-type second well region formed in the semiconductor region and electrically separated from the first well, an n-type first impurity doped region formed in the first well region and an n-type second impurity doped region formed in the second well, wherein a photometry photoelectric conversion element is formed by using the p-type first well region and n-type first impurity doped region, and a range finding photoelectric element is formed by using the p-type second well region and n-type impurity doped region.

摘要翻译： 提供了可以减少测距光电转换元件（AF传感器）和测光光电转换元件（AE传感器）之间的串扰的固态图像拾取装置。 固态摄像装置具有n型外延半导体区域，形成在半导体区域中的p型第一阱区域，形成在半导体区域中并与第一阱电分离的p型第二阱区域，n 形成在第一阱区中的n型第一杂质掺杂区和形成在第二阱中的n型第二杂质掺杂区，其中通过使用p型第一阱区和n型第一杂质形成光度测量光电转换元件 掺杂区域，并且通过使用p型第二阱区域和n型杂质掺杂区域形成测距光电元件。

公开(公告)号：US20070047939A1

公开(公告)日：2007-03-01

申请号：US11499719

申请日：2006-08-07

申请人： Daisuke Inoue ,  Hidekazu Takahashi

发明人： Daisuke Inoue ,  Hidekazu Takahashi

IPC分类号： G03B13/00 ,  G03B3/00

CPC分类号： G03B13/36 ,  G02B7/34 ,  G02B7/36

摘要： Although an area type focus detecting device for performing phase difference detection type multi point autofocus is used for high speed high precision autofocus of multi points in a wide region, there is a problem of cost increase due to the increase of the chip area. In accordance with the present invention, photoreceiving area of a specific pixel in an area sensor is made larger than the photoreceiving area of other pixels in the same area sensor. Thus, because the sensor sensitivity is improved and the increase of the chip area is suppressed to a minimum level, the low cost high precision area type focus detecting device can be provided.

摘要翻译： 虽然用于执行相位差检测型多点自动对焦的区域型焦点检测装置用于广域中的多点的高速高精度自动对焦，但是由于芯片面积的增加，存在成本增加的问题。 根据本发明，使区域传感器中的特定像素的光接收区域比相同区域传感器中的其他像素的光接收区域大。 因此，由于传感器灵敏度得到改善并且芯片面积的增加被抑制到最小水平，因此可以提供低成本的高精度区域型焦点检测装置。

公开(公告)号：US20070045672A1

公开(公告)日：2007-03-01

申请号：US11491507

申请日：2006-07-24

申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

IPC分类号： H01L29/80

CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

公开(公告)号：US20060275960A1

公开(公告)日：2006-12-07

申请号：US11440128

申请日：2006-05-25

申请人： Daiki Yamada ,  Yoshitaka Dozen ,  Eiji Sugiyama ,  Hidekazu Takahashi

发明人： Daiki Yamada ,  Yoshitaka Dozen ,  Eiji Sugiyama ,  Hidekazu Takahashi

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L27/1266 ,  H01L27/124 ,  H01L27/1292 ,  H01L27/1296 ,  H01L29/78621 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2924/00

摘要： An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.

公开(公告)号：US20060270114A1

公开(公告)日：2006-11-30

申请号：US11498164

申请日：2006-08-03

申请人： Kazuo Nishi ,  Hiroki Adachi ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Hidekazu Takahashi ,  Daiki Yamada ,  Yoshikazu Hiura

发明人： Kazuo Nishi ,  Hiroki Adachi ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Hidekazu Takahashi ,  Daiki Yamada ,  Yoshikazu Hiura

IPC分类号： H01L21/00

CPC分类号： H01L31/0203 ,  H01L23/49805 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/83851 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014

摘要： The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.

公开(公告)号：US06995800B2

公开(公告)日：2006-02-07

申请号：US09768500

申请日：2001-01-25

申请人： Hidekazu Takahashi ,  Tetsunobu Kochi

发明人： Hidekazu Takahashi ,  Tetsunobu Kochi

IPC分类号： H04N5/225

CPC分类号： H04N5/2254 ,  H01L27/14627

摘要： In order to prevent an image quality from being lowered by shading and or the like, an image pickup apparatus is provided which includes an image pickup area including a plurality of photoelectric conversion areas, a plurality of converging lenses for converging light on a plurality of photoelectric conversion areas, and a light shielding area having a plurality of opening areas through which light is incident upon the plurality of photoelectric conversion areas, wherein positions of the converging lens and opening area are shifted inward than a corresponding photoelectric conversion area.

摘要翻译： 为了防止通过阴影等降低图像质量，提供了一种图像拾取装置，其包括包括多个光电转换区域的图像拾取区域，用于将光会聚在多个光电转换区域上的多个会聚透镜 转换区域和具有光入射到多个光电转换区域的多个开口区域的遮光区域，其中会聚透镜和开口区域的位置比对应的光电转换区域向内偏移。

公开(公告)号：US20060011288A1

公开(公告)日：2006-01-19

申请号：US11168353

申请日：2005-06-29

申请人： Ryosuke Watanabe ,  Hidekazu Takahashi ,  Takuya Tsurume ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Miyuki Higuchi

发明人： Ryosuke Watanabe ,  Hidekazu Takahashi ,  Takuya Tsurume ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Miyuki Higuchi

IPC分类号： B32B37/00 ,  B29C65/00

CPC分类号： H01L21/56 ,  B32B37/153 ,  B32B37/226 ,  B32B2305/342 ,  B32B2519/02 ,  G06K19/07718 ,  G06K19/07749 ,  H01L21/67132 ,  H01L2924/0002 ,  Y10T29/41 ,  Y10T156/1095 ,  Y10T156/1734 ,  H01L2924/00

摘要： The invention provides a laminating system in which one of second and third substrates for sealing a thin film integrated circuit is supplied to a first substrate having the plurality of thin film integrated circuit while being extruded in a heated and melted state, and further rollers are used for supplying the other substrate, receiving IC chips, separating, and sealing. Processes of separating the thin film integrated circuits provided over the first substrate, sealing the separated thin film integrated circuits, and receiving the sealed thin film integrated circuits can be continuously carried out by rotating the rollers. Thus, the production efficiency can be extremely improved.

公开(公告)号：US20050270395A1

公开(公告)日：2005-12-08

申请号：US11198232

申请日：2005-08-08

申请人： Tomoya Yoneda ,  Shunsuke Inoue ,  Tetsunobu Kochi ,  Hidekazu Takahashi ,  Masanori Ogura

发明人： Tomoya Yoneda ,  Shunsuke Inoue ,  Tetsunobu Kochi ,  Hidekazu Takahashi ,  Masanori Ogura

IPC分类号： H04N5/335 ,  H04N3/15 ,  H04N9/04

CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14645 ,  H04N5/3415 ,  H04N9/045 ,  H04N2209/048

摘要： An image pickup apparatus is provided, which comprises a plurality of image pickup areas formed on a same semiconductor chip and arranged in the horizontal and the vertical directions, each image pickup area having a plurality of pixels arranged in the horizontal and the vertical directions, a plurality of vertical scanning circuits which sequentially scan pixels in the vertical direction to scan a plurality of image pickup areas in the vertical direction independently from each other, a plurality of lenses, at least one of which is provided in each of the plurality of image pickup areas and which focuses light to form an image on the image pickup areas, and a driving circuit which drives the plurality of vertical scanning circuits so that at least a part of a scanning period of each of the plurality of vertical scanning circuits overlaps with each other.

摘要翻译： 提供了一种图像拾取装置，其包括形成在相同的半导体芯片上且沿水平和垂直方向布置的多个图像拾取区域，每个图像拾取区域具有沿水平和垂直方向布置的多个像素， 多个垂直扫描电路，其顺序地扫描垂直方向上的像素，以在垂直方向上彼此独立地扫描多个摄像区域;多个透镜，其中至少一个设置在多个图像拾取器 区域，其聚焦光以在图像拾取区域上形成图像;以及驱动电路，其驱动多个垂直扫描电路，使得多个垂直扫描电路中的每一个的扫描周期的至少一部分彼此重叠 。