公开(公告)号：USRE42887E1

公开(公告)日：2011-11-01

申请号：US12548363

申请日：2009-08-26

Applicant: Mehran Mehregany ,  Christian A. Zorman ,  Xiao-An Fu ,  Jeremy Dunning

Inventor： Mehran Mehregany ,  Christian A. Zorman ,  Xiao-An Fu ,  Jeremy Dunning

IPC: C23C16/00

CPC classification number: C23C16/325

Abstract: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

Abstract translation: 公开了一种在衬底上沉积陶瓷膜，特别是碳化硅膜的方法，其中控制残余应力，残余应力梯度和电阻率。 还公开了具有具有这些受控特性的沉积膜和具有这些性质的器件的衬底，特别是MEMS和NEMS器件，具有具有这些性质的膜的衬底。

公开(公告)号：US20110212599A1

公开(公告)日：2011-09-01

申请号：US13036330

申请日：2011-02-28

Applicant: Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

Inventor： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

IPC: H01L21/20 ,  C23C16/455 ,  C23C16/458 ,  H01L21/00

CPC classification number: H01L21/0262 ,  C23C16/325 ,  C23C16/45578 ,  H01L21/02529 ,  H01L21/67109

Abstract: Provided is a method of manufacturing a semiconductor device using a substrate processing apparatus including a reaction chamber in which a plurality of substrates are stacked at a predetermined distance; a first gas supply nozzle installed to extend to a region in which the plurality of substrates are stacked; a second gas supply nozzle installed to extend to a different position from a position at which the first gas supply nozzle is installed in the region in which the plurality of substrates are stacked; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the second gas supply nozzle, and including at least one first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the first gas supply nozzle, and including at least one second gas supply port; wherein the first gas supply port and the second gas supply port are installed adjacent to each other in a direction that the plurality of substrates are stacked, the method including the steps of: loading the plurality of substrates into the reaction chamber; and forming SiC films by supplying at least a silicon-containing gas and a chlorine-containing gas or a silicon/chlorine-containing gas through the first gas supply port and supplying at least a carbon-containing gas and a reduction gas through the second gas supply port.

Abstract translation: 提供一种使用基板处理设备制造半导体器件的方法，该基板处理设备包括其中多个基板以预定距离堆叠的反应室; 第一气体供给喷嘴，其安装成延伸到所述多个基板堆叠的区域; 第二气体供给喷嘴，其安装成在与堆叠所述多个基板的区域中延伸到与所述第一气体供给喷嘴的位置不同的位置; 第一分支喷嘴，其安装在所述第一气体供给喷嘴的平行于所述多个基板的主表面的方向上，所述第一分支喷嘴的至少一条线沿所述第二气体供给喷嘴的方向分支，并且包括至少一个第一气体供应 港口; 以及第二分支喷嘴，其在与所述多个基板的主表面平行的方向上安装在所述第二气体供给喷嘴处，所述第二分支喷嘴的至少一条线沿所述第一气体供给喷嘴的方向分支，并且包括至少一个第二喷嘴 供气口; 其特征在于，所述第一气体供给口和所述第二气体供给口沿所述多个基板层叠的方向彼此相邻地安装，所述方法包括以下步骤：将所述多个基板装载到所述反应室中; 以及通过经由所述第一气体供给口至少供给含硅气体和含氯气体或含硅/氯气体而形成SiC膜，并且通过所述第二气体供给至少含碳气体和还原气体 供应口。

公开(公告)号：US07960252B2

公开(公告)日：2011-06-14

申请号：US12321773

申请日：2009-01-26

Applicant: Yung-Tin Chen

Inventor： Yung-Tin Chen

IPC: H01L21/20 ,  H01L21/36

CPC classification number: C23C16/483 ,  C23C16/22 ,  C23C16/24 ,  C23C16/325 ,  C23C16/50 ,  C23C16/56 ,  H01J37/3244 ,  H01J37/32862

Abstract: An apparatus for high-rate chemical vapor (CVD) deposition of semiconductor films comprises a reaction chamber for receiving therein a substrate and a film forming gas, a gas inlet for introducing the film forming gas into the reaction chamber, an incidence window in the reaction chamber for transmission of a laser sheet into the reaction chamber, a laser disposed outside the reaction chamber for generating the laser sheet and an antenna disposed outside the reaction chamber for generating a plasma therein. The film forming gas in the chamber is excited and decomposed by the laser sheet, which passes in parallel with the substrate along a plane spaced apart therefrom, and concurrent ionization effected by the antenna, thereby forming a dense semiconductor film on the substrate at high rate.

Abstract translation: 用于半导体膜的高速化学蒸汽（CVD）沉积的装置包括用于在其中容纳基底和成膜气体的反应室，用于将成膜气体引入反应室的气体入口，反应中的入射窗 用于将激光片传送到反应室的腔室，设置在反应室外部用于产生激光片的激光器和设置在反应室外部的用于在其中产生等离子体的天线。 腔室中的成膜气体被激光片激发并分解，该激光片沿着与衬底间隔开的平面平行通过，并且由天线实现并发电离，从而以高速率在衬底上形成致密的半导体膜 。

公开(公告)号：US07879150B2

公开(公告)日：2011-02-01

申请号：US11896504

申请日：2007-09-04

Applicant: Masao Nagakubo ,  Fusao Hirose ,  Yasuo Kitoh

Inventor： Masao Nagakubo ,  Fusao Hirose ,  Yasuo Kitoh

IPC: C23C16/00

CPC classification number: C30B29/36 ,  C23C16/325 ,  C23C16/45578 ,  C30B25/12 ,  C30B25/14 ,  C30B25/165 ,  Y10T117/10

Abstract: A silicon carbide manufacturing device includes a graphite crucible, in which a seed crystal is disposed, a gas-inducing pipe coupled with the graphite crucible, and an attachment prevention apparatus. The gas-inducing pipe has a column-shaped hollow part, through which a source gas flows into the graphite crucible. The attachment prevention apparatus includes a rod extending to a flow direction of the source gas, and a revolving and rotating element for revolving the rod along an inner wall of the gas-inducing pipe while rotating the rod on an axis of the rod in parallel to the flow direction.

Abstract translation: 碳化硅制造装置包括其中设置有晶种的石墨坩埚，与石墨坩埚连接的气体诱导管，以及附着防止装置。 气体诱导管具有柱状中空部，源气体通过该中空部流入石墨坩埚。 附着防止装置包括延伸到源气体的流动方向的杆，以及用于沿着气体诱导管的内壁旋转杆的旋转和旋转元件，同时沿杆的轴线平行地旋转杆 流动方向。

公开(公告)号：US20110006037A1

公开(公告)日：2011-01-13

申请号：US12833406

申请日：2010-07-09

Applicant: Naoyuki SATOH ,  Nobuyuki NAGAYAMA ,  Keiichi NAGAKUBO

Inventor： Naoyuki SATOH ,  Nobuyuki NAGAYAMA ,  Keiichi NAGAKUBO

IPC: B44C1/22

CPC classification number: C23C8/36 ,  C23C8/80 ,  C23C16/325 ,  C23C16/4404 ,  C23C16/56 ,  H01J2237/31

Abstract: In a surface processing method for processing a surface of a member made of silicon carbide (SiC) and having a fragmental layer on a surface thereof, the surface of the member having the fragmental layer is modified into a dense layer to reduce the number of particles generated from the surface of the member when the member is applied to a plasma processing apparatus. Here, the SiC of the surface of the member is recrystallized by heating the fragmental layer.

Abstract translation: 在用于处理由碳化硅（SiC）制成的并且在其表面上具有碎裂层的构件的表面的表面处理方法中，具有碎裂层的构件的表面被修改为致密层以减少颗粒的数量 当构件被施加到等离子体处理装置时从构件的表面产生。 这里，通过加热碎片层使构件表面的SiC再结晶。

公开(公告)号：US20100297832A1

公开(公告)日：2010-11-25

申请号：US12782090

申请日：2010-05-18

Applicant: Yoshinori IMAI ,  Hideji SHIBATA ,  Takafumi SASAKI

Inventor： Yoshinori IMAI ,  Hideji SHIBATA ,  Takafumi SASAKI

IPC: H01L21/205 ,  C23C16/32 ,  C23C16/455

CPC classification number: H01L21/205 ,  C23C16/325 ,  C23C16/4401 ,  C23C16/45574 ,  C30B25/14 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02529 ,  H01L21/0262

Abstract: Provided is a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate manufacturing method. The substrate processing apparatus comprises: a reaction chamber configured to process substrates; a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine; a first gas supply unit connected to the first gas supply system; a second gas supply system configured to supply at least a reducing gas; a second gas supply unit connected to the second gas supply system; a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and a control unit configured to control the first to third gas supply systems.

Abstract translation: 提供了一种基板处理装置，半导体装置制造方法和基板制造方法。 基板处理装置包括：被配置为处理基板的反应室; 配置为至少提供含硅气体和含氯气体或至少含有硅和氯的气体的第一气体供给系统; 连接到第一气体供应系统的第一气体供应单元; 构造成供给至少一种还原气体的第二气体供给系统; 连接到第二气体供应系统的第二气体供应单元; 第三气体供给系统，被配置为至少提供含碳气体，并连接到所述第一气体供给单元和所述第二气体供给单元中的至少一个; 以及控制单元，被配置为控制所述第一至第三气体供应系统。

公开(公告)号：US20100178490A1

公开(公告)日：2010-07-15

申请号：US12529393

申请日：2008-02-29

Applicant: Glenn Cerny ,  Mark Loboda ,  Vasgen Shamamian ,  Steven Snow ,  William Weidner ,  Ludmil Zambov

Inventor： Glenn Cerny ,  Mark Loboda ,  Vasgen Shamamian ,  Steven Snow ,  William Weidner ,  Ludmil Zambov

IPC: B32B27/06 ,  C23C16/44 ,  C23C16/32 ,  B32B9/04 ,  B32B3/26

CPC classification number: C23C16/545 ,  C23C16/30 ,  C23C16/325 ,  Y10T428/249978 ,  Y10T428/31507 ,  Y10T428/3154 ,  Y10T428/31663

Abstract: The present invention provides method and process for forming a barrier layer on a flexible substrate. The continuous roll-to-roll method includes providing a substrate to a processing chamber using at least one roller configured to guide the substrate through the processing chamber. The process includes depositing a barrier layer adjacent the substrate by exposing at least one portion of the substrate that is within the processing chamber to plasma comprising a silicon-and-carbon containing precursor gas. The present invention is further directed to a coated flexible substrates comprising a barrier layer based on the structural unit SiC:H. The barrier layer possesses high density and low porosity. Still further, the barrier layer exhibits low water vapor transmission rate (WVTR) in the range of 10−2-10−3 g.m−2d−1 and is appropriate for very low permeability applications.

Abstract translation: 本发明提供了在柔性基板上形成阻挡层的方法和工艺。 连续的卷对卷方法包括使用至少一个构造成将基底引导通过处理室的辊将处理室提供衬底。 该方法包括通过将处理室内的衬底的至少一部分暴露于包含含硅和碳的前体气体的等离子体来沉积邻近衬底的阻挡层。 本发明进一步涉及包含基于结构单元SiC：H的阻挡层的涂覆的柔性基底。 阻隔层具有高密度和低孔隙率。 此外，阻挡层在10-2-10-3g.m-2d-1的范围内表现出低的水蒸汽透过率（WVTR），并且适用于非常低的渗透性应用。

公开(公告)号：US07755733B2

公开(公告)日：2010-07-13

申请号：US11452826

申请日：2006-06-14

Applicant: Soon-Joon Rho ,  Hong-Koo Baik ,  Kyung-Chan Kim ,  Jong-Bok Kim ,  Byoung-Har Hwang ,  Han-Jin Ahn

Inventor： Soon-Joon Rho ,  Hong-Koo Baik ,  Kyung-Chan Kim ,  Jong-Bok Kim ,  Byoung-Har Hwang ,  Han-Jin Ahn

IPC: G02F1/1337

CPC classification number: C23C16/325 ,  C23C14/0635 ,  C23C14/3457 ,  C23C14/3464 ,  C23C16/56 ,  G02F1/1337 ,  G02F2202/00 ,  H01J37/3429 ,  Y10T428/10

Abstract: A liquid crystal display apparatus includes a first display substrate, a second display substrate and a liquid crystal layer disposed therebetween. The first and second display substrates include first and second vertical inorganic alignment layers, respectively, to vertically align liquid crystal molecules of the liquid crystal layer. The first and second vertical inorganic alignment layers each include a silicon carbide and are formed on the first and second display substrates, respectively, by a chemical vapor deposition method or a sputtering method. Thus, processes for the vertical inorganic alignment layer may be simplified, thereby improving manufacturing productivity of the liquid crystal display apparatus.

Abstract translation: 液晶显示装置包括第一显示基板，第二显示基板和设置在其间的液晶层。 第一和第二显示基板分别包括垂直取向液晶层的液晶分子的第一和第二垂直无机取向层。 第一和第二垂直无机取向层各自包括碳化硅，并分别通过化学气相沉积法或溅射法形成在第一和第二显示器基板上。 因此，可以简化用于垂直无机取向层的工艺，从而提高液晶显示装置的制造生产率。

公开(公告)号：US07749563B2

公开(公告)日：2010-07-06

申请号：US10266551

申请日：2002-10-07

Applicant: Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia

Inventor： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia

IPC: C23C16/00

CPC classification number: H01L21/02167 ,  C23C16/0272 ,  C23C16/325 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/314 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832

Abstract: A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. A method is provided for depositing a silicon carbide cap layer that has substantially no phenyl groups attached to silicon atoms from a processing gas comprising an oxygen-free organosilicon compound on a low k silicon carbide barrier layer.

Abstract translation: 提供了一种处理基材的方法，包括提供包含含有苯基的有机硅化合物的处理气体至处理室，并使处理气体反应沉积在大马士革或双镶嵌中可用作阻挡层的低k碳化硅阻挡层 低k电介质材料的应用。 提供了一种用于沉积在低k碳化硅阻挡层上基本上没有从包含无氧有机硅化合物的处理气体连接到硅原子上的苯基沉积碳化硅盖层的方法。

公开(公告)号：US07712435B2

公开(公告)日：2010-05-11

申请号：US11237997

申请日：2005-09-28

Applicant: Yu Yoshizaki ,  Ryu Nakano

Inventor： Yu Yoshizaki ,  Ryu Nakano

IPC: C23C16/507 ,  C23C16/509 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306 ,  C23C16/22 ,  C23C16/06

CPC classification number: C23C16/325 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32559

Abstract: A plasma processing apparatus includes: a reaction chamber; two electrodes provided inside the reaction chamber for generating a plasma therebetween, wherein at least one of the electrodes has at least one gas inlet pore through which a gas is introduced into the reaction chamber; and a gas inlet pipe coupled to the gas inlet pore for introducing the gas into the reaction chamber. The gas inlet pipe is grounded and insulated from the gas inlet pore, wherein an insulation member is placed inside the gas inlet pipe and the gas inlet pore.

Abstract translation: 一种等离子体处理装置，包括：反应室; 设置在所述反应室内的用于在其间产生等离子体的两个电极，其中所述电极中的至少一个具有至少一个气体入口孔，通过所述气体入口孔将气体引入所述反应室中; 以及连接到气体入口孔的气体入口管，用于将气体引入反应室。 进气管接地并与气体入口孔绝缘，其中绝热构件放置在气体入口管内和气体入口孔内。