公开(公告)号：US09041080B2

公开(公告)日：2015-05-26

申请号：US14376662

申请日：2012-08-02

Applicant: Kazuki Tani ,  Shinichi Saito ,  Katsuya Oda

Inventor： Kazuki Tani ,  Shinichi Saito ,  Katsuya Oda

IPC: H01L29/00 ,  H01S5/32

CPC classification number: H01S5/3223 ,  H01L33/34 ,  H01L33/38 ,  H01S5/0206 ,  H01S5/021 ,  H01S5/0424 ,  H01S5/1228 ,  H01S5/125 ,  H01S5/2272

Abstract: To provide a light-emitting element where electrons are efficiently injected into a Ge light emission layer and light can be efficiently emitted, the light-emitting element has a barrier layer 3 which is formed on an insulating film 2, worked in a size in which quantum confinement effect manifests and made of monocrystalline Si, a p-type diffused layer electrode 5 and an n-type diffused layer electrode 6 respectively provided at both ends of the barrier layer 3, and a monocrystalline Ge light emission part 13 provided on the barrier layer 3 between the electrodes 5, 6. At least a part of current that flows between the electrodes 5, 6 flows in the barrier layer 3 in a horizontal direction with respect to a substrate 1.

Abstract translation: 为了提供一种发光元件，其中电子被有效地注入到Ge发光层中并且可以有效地发射光，发光元件具有形成在绝缘膜2上的阻挡层3，该阻挡层3以 量子限制效应表现为单晶Si，分别设置在阻挡层3的两端的p型扩散层电极5和n型扩散层电极6以及设置在势垒层3上的单晶Ge发光部13 在电极5,6之间流动的电流的至少一部分在阻挡层3中相对于基板1在水平方向上流动。

公开(公告)号：US08792528B2

公开(公告)日：2014-07-29

申请号：US13467217

申请日：2012-05-09

Applicant: Robert H. Blick ,  Luke J. Mawst

Inventor： Robert H. Blick ,  Luke J. Mawst

IPC: H01S5/12 ,  H01S5/125

CPC classification number: H01S5/1228 ,  H01S5/041 ,  H01S5/06 ,  H01S5/10 ,  H01S5/1042 ,  H01S5/1075 ,  H01S5/12 ,  H01S5/3201

Abstract: Disclosed are semiconductor microtube lasers including a semiconductor multilayer heterostructure. The multilayer heterostructure includes a substantially cylindrical optically active structure capable of light emission when under the influence of an applied electromagnetic field and a substantially cylindrical distributed feedback grating structure configured to provide optical feedback for a selected wavelength of light from the optically active region and to produce lasing action from the microtube when under the influence of an applied electromagnetic field.

Abstract translation: 公开了包括半导体多层异质结构的半导体微管激光器。 多层异质结构包括基本上圆柱形的光学活性结构，其在施加的电磁场的影响下能够发光，并且基本上为圆柱形的分布反馈光栅结构，其被配置为为来自光学活性区域的所选波长的光提供光学反馈并产生 在施加的电磁场的影响下，微管的激光作用。

公开(公告)号：US08521020B2

公开(公告)日：2013-08-27

申请号：US12795619

申请日：2010-06-07

Applicant: David F. Welch ,  Drew D. Perkins ,  Fred A. Kish, Jr. ,  Ting-Kuang Chiang

Inventor： David F. Welch ,  Drew D. Perkins ,  Fred A. Kish, Jr. ,  Ting-Kuang Chiang

IPC: H04B10/04 ,  H04B10/08

CPC classification number: H01S5/0265 ,  B82Y20/00 ,  G02B6/12021 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0268 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/0683 ,  H01S5/1228 ,  H01S5/2077 ,  H01S5/22 ,  H01S5/3408 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/50 ,  H04B10/25 ,  H04B10/2914 ,  H04B10/50 ,  H04B10/675 ,  H04J14/02 ,  H04J14/0279

Abstract: A forward error correction (FEC) communication device that includes a transmitter photonic integrated circuit (TxPIC) or a receiver photonic integrated circuit (RxPIC) and a FEC device for FEC coding at least one channel with a first error rate and at least one additional channel with a second error rate, wherein the first error rate is greater than the second error rate. The TxPIC chip is a monolithic multi-channel chip having an array of modulated sources integrated on the chip, each operating at a different wavelength, wherein at least one of the modulated sources is modulated with a respective FEC encoded signal. The TxPIC also includes an integrated wavelength selective combiner for combining the channels for transport over an optical link.

Abstract translation: 包括发射机光子集成电路（TxPIC）或接收机光子集成电路（RxPIC）的前向纠错（FEC）通信设备和用于FEC编码具有第一错误率的至少一个信道和至少一个附加信道的FEC设备 具有第二错误率，其中第一错误率大于第二错误率。 TxPIC芯片是具有集成在芯片上的调制源阵列的单片多通道芯片，每个调制源阵列以不同的波长工作，其中至少一个调制源以相应的FEC编码信号进行调制。 TxPIC还包括用于组合用于光链路传输的信道的集成波长选择组合器。

公开(公告)号：US20120257645A1

公开(公告)日：2012-10-11

申请号：US13081135

申请日：2011-04-06

Applicant: Bernd SARTORIUS

Inventor： Bernd SARTORIUS

IPC: H01S3/10

CPC classification number: H01S5/0623 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/06258 ,  H01S5/1014 ,  H01S5/1092 ,  H01S5/1228 ,  H01S2302/02

Abstract: The invention relates to a beat signal generating device for use in a Terahertz system, comprising a first monomode laser for generating radiation of a first wavelength; a second monomode laser for generating radiation of a second wavelength different from the first wavelength; a first and a second output port; a phase modulating unit for modifying both the phase of radiation generated by the first laser and the phase of radiation generated the second laser, wherein the beat signal generating device is configured in such a way that the radiation generated by the first laser is transmitted through the second laser and superposed with the radiation generated by the second laser at the second output port, and the radiation generated by the second laser is transmitted through the first laser and superposed with the radiation generated by the first laser at the first output port, such that a first beat signal will be emitted at the first output port and a second beat signal will be emitted at the second output port, wherein the phase between the first and the second beat signal can be adjusted by means of the phase modulating unit. The invention also relates to a Terahertz system and the use of a beat signal generating device.

Abstract translation: 本发明涉及一种在太赫兹系统中使用的拍频信号发生装置，包括用于产生第一波长的辐射的第一单模激光器; 用于产生不同于第一波长的第二波长的辐射的第二单体激光器; 第一和第二输出端口; 相位调制单元，用于修改由第一激光器产生的辐射相位和产生第二激光器的辐射相位，其中，拍频信号产生装置被配置成使得由第一激光器产生的辐射通过 与第二激光器在第二输出端口产生的辐射叠加，并且由第二激光器产生的辐射透射通过第一激光器并与第一激光器在第一输出端口处产生的辐射叠加，使得 在第一输出端口处将发出第一差拍信号，并且在第二输出端口处发出第二拍频信号，其中可以通过相位调制单元来调整第一和第二拍频信号之间的相位。 本发明还涉及一种太赫兹系统和使用节拍信号产生装置。

公开(公告)号：US08184929B2

公开(公告)日：2012-05-22

申请号：US12345434

申请日：2008-12-29

Applicant: Fred A. Kish, Jr. ,  Charles H. Joyner ,  David F. Welch ,  Robert B. Taylor ,  Alan C. Nilsson

Inventor： Fred A. Kish, Jr. ,  Charles H. Joyner ,  David F. Welch ,  Robert B. Taylor ,  Alan C. Nilsson

IPC: G02F1/01 ,  G02B6/12 ,  G02B6/26

CPC classification number: G02B6/12033 ,  B82Y20/00 ,  G02B6/02204 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/12019 ,  G02B6/12023 ,  G02B6/12026 ,  G02B6/12028 ,  G02B6/124 ,  G02F1/01725 ,  G02F2001/0175 ,  G02F2001/01758 ,  H01S5/0085 ,  H01S5/024 ,  H01S5/02415 ,  H01S5/02453 ,  H01S5/02461 ,  H01S5/02476 ,  H01S5/026 ,  H01S5/0261 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0268 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/0683 ,  H01S5/0687 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/2077 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/2275 ,  H01S5/3408 ,  H01S5/34306 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/50 ,  H04B10/2914 ,  H04B10/50 ,  H04B10/506 ,  H04B10/572 ,  H04J14/02

Abstract: An optical transmitter comprises a monolithic transmitter photonic integrated circuit (TxPIC) chip that includes an array of modulated sources formed on the PIC chip and having different operating wavelengths approximating a standardized wavelength grid and providing signal outputs of different wavelengths. A wavelength selective combiner is formed on the PIC chip having a wavelength grid passband response approximating the wavelength grid of the standardized wavelength grid. The signal outputs of the modulated sources optically coupled to inputs of the wavelength selective combiner to produce a combined signal output from the combiner. A first wavelength tuning element coupled to each of the modulated sources and a second wavelength tuning element coupled to the wavelength selective combiner. A wavelength monitoring unit is coupled to the wavelength selective combiner to sample the combined signal output. A wavelength control system coupled to the first and second wavelength tuning elements and to said wavelength monitoring unit to receive the sampled combined signal output. The wavelength control system adjusts the respective wavelengths of operation of the modulated sources to approximate or to be chirped to the standardized wavelength grid and for adjusting the optical combiner wavelength grid passband response to approximate the standardized wavelength grid.

Abstract translation: 光发射机包括单片发射机光子集成电路（TxPIC）芯片，其包括形成在PIC芯片上的调制源的阵列，并且具有接近标准化波长网格并提供不同波长的信号输出的不同工作波长。 在具有近似于标准化波长网格的波长网格的波长网格通带响应的PIC芯片上形成波长选择性组合器。 调制源的信号输出光耦合到波长选择组合器的输入，以产生从组合器输出的组合信号。 耦合到每个调制源的第一波长调谐元件和耦合到波长选择组合器的第二波长调谐元件。 波长监测单元耦合到波长选择组合器以对组合的信号输出进行采样。 波长控制系统耦合到第一和第二波长调谐元件以及所述波长监视单元以接收采样的组合信号输出。 波长控制系统调整调制源的各个波长的波长近似于或被啁啾到标准化波长网格，并且用于调整光合并波长网格通带响应以近似标准化的波长网格。

公开(公告)号：US20120093187A1

公开(公告)日：2012-04-19

申请号：US13266831

申请日：2010-05-05

Applicant: Johannes Bernhard Koeth ,  Wolfgang Zeller

Inventor： Johannes Bernhard Koeth ,  Wolfgang Zeller

IPC: H01S5/125

CPC classification number: H01S5/1228 ,  H01S5/1014 ,  H01S5/1203 ,  H01S5/1237 ,  H01S5/2004 ,  H01S5/2031 ,  H01S5/22

Abstract: The invention relates to a DFB laser diode having a lateral coupling, which comprises at least one semi-conductor substrate (10), at least one active layer (40) that is arranged on the semiconductor substrate, at least one ridge (70) that is arranged above the active layer (40), at least one periodic surface structure (110) that is arranged next to the ridge (70) above the active layer (40) and at least one wave guide layer (30, 50) comprising a thickness ≧1 μm that is arranged below and/or above the active layer.

Abstract translation: 本发明涉及具有横向耦合的DFB激光二极管，其包括至少一个半导体衬底（10），布置在半导体衬底上的至少一个有源层（40），至少一个脊（70），至少一个脊 布置在有源层（40）上方的至少一个周期性表面结构（110），其布置在有源层（40）上方的脊（70）旁边，以及至少一个波导层（30,50） 布置在有源层的下方和/或上方的厚度≥1μm。

公开(公告)号：US20120063478A1

公开(公告)日：2012-03-15

申请号：US13095022

申请日：2011-04-27

Applicant: Yeonsang PARK

Inventor： Yeonsang PARK

IPC: H01S3/14

CPC classification number: H01S5/1046 ,  B82Y20/00 ,  H01S5/105 ,  H01S5/1228 ,  H01S5/187 ,  H01S5/3412

Abstract: Provided is a surface plasmon band-edge laser including a gain media having quantum dots configured to enable laser oscillation using surface plasmon resonance. The gain media has a periodic structure and is formed on a metal surface.

Abstract translation: 提供了一种表面等离子体激元带边激光器，其包括具有量子点的增益介质，所述量子点被配置为使得能够使用表面等离子体共振来 增益介质具有周期性结构并形成在金属表面上。

公开(公告)号：US08106378B2

公开(公告)日：2012-01-31

申请号：US11640226

申请日：2006-12-18

Applicant: Hideaki Saito

Inventor： Hideaki Saito

IPC: H01L29/06 ,  H01L31/00

CPC classification number: B82Y20/00 ,  H01S5/1228 ,  H01S5/341 ,  H01S5/3412

Abstract: A p-type semiconductor barrier layer is provided in the vicinity of undoped quantum dots, and holes in the p-type semiconductor barrier layer are injected in advance in the ground level of the valence band of the quantum dots. Lowering the threshold electron density of conduction electrons in the ground level of the conduction band of quantum dots in this way accelerates the relaxation process of electrons from an excited level to the ground level in the conduction band.

Abstract translation: 在未掺杂的量子点附近提供p型半导体势垒层，并且p型半导体势垒层中的空穴预先注入量子点的价带的地层中。 以这种方式降低量子点导带的接地电平中的导电电子的阈值电子密度可以加速电子从激发电平到导带的接地电平的松弛过程。

公开(公告)号：US20110008039A1

公开(公告)日：2011-01-13

申请号：US12795619

申请日：2010-06-07

Applicant: David F. Welch ,  Drew D. Perkins ,  Fred A. Kish, JR. ,  Ting-Kuang Chiang

Inventor： David F. Welch ,  Drew D. Perkins ,  Fred A. Kish, JR. ,  Ting-Kuang Chiang

IPC: H04B10/04

CPC classification number: H01S5/0265 ,  B82Y20/00 ,  G02B6/12021 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0268 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/0683 ,  H01S5/1228 ,  H01S5/2077 ,  H01S5/22 ,  H01S5/3408 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/50 ,  H04B10/25 ,  H04B10/2914 ,  H04B10/50 ,  H04B10/675 ,  H04J14/02 ,  H04J14/0279

Abstract: A forward error correction (FEC) communication device that includes a transmitter photonic integrated circuit (TxPIC) or a receiver photonic integrated circuit (RxPIC) and a FEC device for FEC coding at least one channel with a first error rate and at least one additional channel with a second error rate, wherein the first error rate is greater than the second error rate. The TxPIC chip is a monolithic multi-channel chip having an array of modulated sources integrated on the chip, each operating at a different wavelength, wherein at least one of the modulated sources is modulated with a respective FEC encoded signal. The TxPIC also includes an integrated wavelength selective combiner for combining the channels for transport over an optical link.

Abstract translation: 包括发射机光子集成电路（TxPIC）或接收机光子集成电路（RxPIC）的前向纠错（FEC）通信设备和用于FEC编码具有第一错误率的至少一个信道和至少一个附加信道的FEC设备 具有第二错误率，其中第一错误率大于第二错误率。 TxPIC芯片是具有集成在芯片上的调制源阵列的单片多通道芯片，每个调制源阵列以不同的波长工作，其中至少一个调制源以相应的FEC编码信号进行调制。 TxPIC还包括用于组合用于光链路传输的信道的集成波长选择组合器。

公开(公告)号：US07856040B2

公开(公告)日：2010-12-21

申请号：US12237106

申请日：2008-09-24

Applicant: David P. Bour ,  Christopher L. Chua ,  Noble M. Johnson ,  Zhihong Yang

Inventor： David P. Bour ,  Christopher L. Chua ,  Noble M. Johnson ,  Zhihong Yang

IPC: H01S5/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L33/0045 ,  H01S5/0425 ,  H01S5/1039 ,  H01S5/1228 ,  H01S5/2009 ,  H01S5/2027 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/3214 ,  H01S5/3216

Abstract: The AlGaN upper cladding layer of a nitride laser diode is replaced by a non-epitaxial layer, such as metallic silver. If chosen to have a relatively low refractive index value, the mode loss from absorption in the non-epitaxial cladding layer is acceptably small. If also chosen to have a relatively high work-function, the non-epitaxial layer forms an electrical contact to the nitride semiconductors. An indium-tin-oxide layer may also be employed with the non-epitaxial cladding layer.

Abstract translation: 氮化物激光二极管的AlGaN上覆层由诸如金属银的非外延层代替。 如果选择具有相对低的折射率值，则在非外延包层中的吸收的模式损耗可以接受地小。 如果还选择具有较高的功函数，则非外延层与氮化物半导体形成电接触。 也可以在非外延包覆层中使用铟锡氧化物层。