VACUUM TREATMENT APPARATUS AND A METHOD FOR MANUFACTURING
    1.
    发明申请
    VACUUM TREATMENT APPARATUS AND A METHOD FOR MANUFACTURING 有权
    真空处理设备及其制造方法

    公开(公告)号:US20130287527A1

    公开(公告)日:2013-10-31

    申请号:US13997801

    申请日:2011-12-27

    IPC分类号: H01L21/677

    摘要: A vacuum treatment apparatus and method for manufacturing has a plurality of treatment chambers for treating workpieces, in particular silicon wafers, a transfer chamber attached to the treatment chambers communicating via respective openings and having handling zones located adjacent to each of the treatment chambers. A workpiece carrier is arranged within the transfer chamber and configured to transfer the workpieces between the handling zones, and one or more handlers for moving the workpieces between the handling zones and the treatment chambers. The transfer chamber is ring-shaped about an axis and the openings have opening substantially parallel thereto. This way, forces on the transfer chamber are redirected to a large support structure and thus, a cost-effective, light and still rigid mechanical construction can be achieved.

    摘要翻译: 真空处理装置和制造方法具有多个用于处理工件,特别是硅晶片的处理室,附接到经由各个开口连通的处理室的传送室,并且具有位于每个处理室附近的处理区域。 工件载体布置在传送室内并且构造成在处理区域之间传送工件,以及用于在处理区域和处理室之间移动工件的一个或多个处理器。 传送室围绕轴线是环形的并且开口具有基本上与其平行的开口。 这样,转移室上的力被重定向到大的支撑结构,因此,可以实现成本有效,轻且刚性的机械结构。

    WAFER HOLDER AND TEMPERATURE CONDITIONING ARRANGEMENT AND METHOD OF MANUFACTURING A WAFER
    2.
    发明申请
    WAFER HOLDER AND TEMPERATURE CONDITIONING ARRANGEMENT AND METHOD OF MANUFACTURING A WAFER 有权
    散热器和温度调节装置及其制造方法

    公开(公告)号:US20130052834A1

    公开(公告)日:2013-02-28

    申请号:US13220903

    申请日:2011-08-30

    IPC分类号: H01L21/31 F27D11/12

    CPC分类号: H01L21/67115

    摘要: A wafer holder and temperature controlling arrangement has a metal circular wafer carrier plate, which covers a heater compartment. In the heater compartment a multitude of heater lamp tubes is arranged, which directly acts upon the circular wafer carrier plate. Latter is drivingly rotatable about the central axis. A wafer is held on the circular wafer carrier plate by means of a weight-ring residing upon the periphery of a wafer deposited on the wafer carrier plate.

    摘要翻译: 晶片保持器和温度控制装置具有覆盖加热器隔室的金属圆形晶片承载板。 在加热器隔室中设置有多个加热器灯管,其直接作用在圆形晶片载体板上。 后者可绕中心轴线旋转。 通过位于晶片承载板上淀积的晶片周围的重量环将晶片保持在圆形晶片承载板上。

    Process for the deposition of an anti-reflection film on a substrate
    3.
    发明授权
    Process for the deposition of an anti-reflection film on a substrate 有权
    用于在基板上沉积抗反射膜的工艺

    公开(公告)号:US08263489B2

    公开(公告)日:2012-09-11

    申请号:US13011109

    申请日:2011-01-21

    IPC分类号: H01L21/4763 H01L31/0232

    摘要: A method for the deposition of an anti-reflection film on a substrate is disclosed. A substrate including a plurality of solar cell structures is provided and placed in a vacuum chamber with a target including silicon. A flow of a nitrogen-containing reactive gas into the vacuum chamber is set to a first value while a voltage between the target and ground is switched off and then increased to a second value. A voltage is applied between the target and ground, whereby a film of silicon and nitrogen is deposited on the substrate in a flow of the nitrogen-containing reactive gas which is higher than the first value.

    摘要翻译: 公开了一种在衬底上沉积抗反射膜的方法。 提供包括多个太阳能电池结构的基板并且放置在具有包括硅的靶的真空室中。 将含氮反应性气体流入真空室的流量设定为第一值,同时关闭目标和地面之间的电压,然后增加到第二值。 在靶和地之间施加电压,由此在高于第一值的含氮反应气体的流动下,在衬底上沉积硅和氮的膜。

    RF SPUTTERING ARRANGEMENT
    4.
    发明申请
    RF SPUTTERING ARRANGEMENT 审中-公开
    RF射频安排

    公开(公告)号:US20100126853A1

    公开(公告)日:2010-05-27

    申请号:US12623573

    申请日:2009-11-23

    申请人: Martin Kratzer

    发明人: Martin Kratzer

    IPC分类号: C23C14/44

    CPC分类号: H01J37/3408 H01J37/3438

    摘要: Apparatus for sputtering comprises a vacuum chamber defined by at least one side wall, a base and a cover, at least one first electrode having a surface arranged in the vacuum chamber, a counter electrode having a surface arranged in the vacuum chamber and a RF generator. The RF generator is configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode. The counter electrode comprises at least a portion of the side wall and/or the base of the vacuum chamber and an additional electrically conductive member. The additional electrically conductive member comprises at least two surfaces arranged generally parallel to one another and spaced at a distance from one another.

    摘要翻译: 用于溅射的装置包括由至少一个侧壁,基部和盖子限定的真空室,具有布置在真空室中的表面的至少一个第一电极,具有布置在真空室中的表面的对电极和RF发生器 。 RF发生器被配置为在所述至少一个第一电极和对电极之间施加RF电场,以点燃第一电极和对电极之间的等离子体。 对电极包括真空室的侧壁和/或基底的至少一部分和附加的导电构件。 附加的导电构件包括至少两个彼此平行布置且间隔彼此间隔开的表面。

    REACTIVE SPUTTERING WITH HIPIMS
    5.
    发明申请
    REACTIVE SPUTTERING WITH HIPIMS 审中-公开
    反应溅射与HIPIMS

    公开(公告)号:US20090173622A1

    公开(公告)日:2009-07-09

    申请号:US12329064

    申请日:2008-12-05

    IPC分类号: C23C14/35

    摘要: A method and apparatus for sputter depositing an insulation layer onto a surface of a cavity formed in a substrate and having a high aspect ratio is provided. A target formed at least in part from a material to be included in the insulation layer and the substrate are provided in a substantially enclosed chamber defined by a housing. A plasma is ignited within the substantially enclosed chamber and a magnetic field is provided adjacent to a surface of the target to at least partially contain the plasma adjacent to the surface of the target. A voltage is rapidly increased to repeatedly establish high-power electric pulses between a cathode and an anode. An average power of the electric pulses is at least 0.1 kW, and can optionally be much greater. An operational parameter of the sputter deposition is controlled to promote sputter depositing of the insulation layer in a transition mode between a metallic mode and a reactive mode.

    摘要翻译: 提供了一种用于将绝缘层溅射沉积到形成在衬底中并且具有高纵横比的空腔的表面上的方法和装置。 至少部分地由要包括在绝缘层和基板中的材料形成的靶设置在由壳体限定的基本封闭的腔室中。 等离子体在基本封闭的室内点燃,并且邻近靶的表面提供磁场以至少部分地包含邻近靶的表面的等离子体。 电压迅速升高以在阴极和阳极之间反复建立大功率的电脉冲。 电脉冲的平均功率为至少0.1kW,并且可以可选地大得多。 控制溅射沉积的操作参数以促进绝缘层在金属模式和反应模式之间的过渡模式中的溅射沉积。

    Procedure and device for the production of a plasma
    6.
    发明申请
    Procedure and device for the production of a plasma 有权
    用于生产等离子体的方法和装置

    公开(公告)号:US20090145554A1

    公开(公告)日:2009-06-11

    申请号:US12315608

    申请日:2008-12-04

    IPC分类号: H01L21/3065

    摘要: The present invention concerns a procedure for the production of a plasma that is at least co-produced in the vacuum chamber (1a) of a vacuum recipient (1) of a device suitable for plasma processing with at least one induction coil (2) carrying an alternating current, where the gas used to produce the plasma is fed into the vacuum chamber (1a) through at least one inlet (3) and the vacuum chamber (1a) is subject to the pumping action of at least one pump arrangement (4), and where a possibly pulsed direct current is also applied to the induction coil (2) in order to influence the plasma density.

    摘要翻译: 本发明涉及一种用于生产等离子体的方法,所述等离子体至少在适于等离子体处理的装置的真空容器(1)的真空室(1a)中共同生产,其中至少一个感应线圈(2)承载 交流电,其中用于产生等离子体的气体通过至少一个入口(3)进入真空室(1a),并且真空室(1a)受到至少一个泵装置(4)的泵送作用 ),并且其中也可能脉冲的直流电流也施加到感应线圈(2)以便影响等离子体密度。

    Method for producing a directional layer by cathode sputtering, and device for implementing the method
    7.
    发明申请
    Method for producing a directional layer by cathode sputtering, and device for implementing the method 有权
    通过阴极溅射制造定向层的方法,以及用于实施该方法的装置

    公开(公告)号:US20090134011A1

    公开(公告)日:2009-05-28

    申请号:US11968300

    申请日:2008-01-02

    IPC分类号: C23C14/34

    摘要: For producing a directional layer for instance with constant nominal directionality, such as a low-retentivity layer with a preferred direction of magnetization or a support layer for such a layer by cathode sputtering on a substrate surface (4), the coating process takes place in a manner whereby particles emanating from a target surface (6) impinge predominantly from directions at which their projection onto the substrate surface (4) lies within a preferred angular range surrounding the nominal direction. This is achieved for instance by positioning a collimator (8), encompassing plates (9) that extend at a normal angle to the substrate surface (4) parallel to the nominal direction in front of the substrate surface (4), but in lieu of or in addition to such positioning the location or movement of the substrate surface (4) relative to the target surface (6) can also be suitably adjusted or controlled.

    摘要翻译: 为了产生例如具有恒定标称方向性的定向层,例如具有优选磁化方向的低保持层或用于通过阴极溅射在衬底表面(4)上的这种层的支撑层,涂覆过程发生在 从目标表面(6)发出的颗粒主要从其在衬底表面(4)上的投影位于围绕标称方向的优选角度范围内的方向入射的方式。 这例如通过定位准直器(8)来实现,该准直器(8)围绕与基板表面(4)平行于基板表面(4)的标称方向的法向角度延伸的板(9),但代替 或者除了这样的定位之外,还可以适当地调整或控制衬底表面(4)相对于目标表面(6)的位置或移动。

    Method for the production of a substrate
    8.
    发明授权
    Method for the production of a substrate 有权
    制造基材的方法

    公开(公告)号:US07429543B2

    公开(公告)日:2008-09-30

    申请号:US11539218

    申请日:2006-10-06

    IPC分类号: H01L21/26

    摘要: Method for producing a substrate includes establishing a plasma discharge with a locally inhomogeneous density distribution and exposing the substrate to the inhomogeneously density-distributed plasma discharge. The distribution is established by establishing a specified relative movement of the inhomogeneous density distribution and of the substrate and establishing a specified time variation of an electric power signal supplying the discharge and/or of an optionally provided further electric signal which connects the substrate to bias voltage. When the electric power signal or further electric signal is an AC signal, the specified time variation of the signal addresses its modulation and the method includes setting the variation and the movement.

    摘要翻译: 制造衬底的方法包括建立具有局部不均匀密度分布的等离子体放电,并将衬底暴露于非均匀密度分布的等离子体放电。 通过建立不均匀密度分布和衬底的指定相对运动并建立提供放电的电功率信号和/或可选地提供的进一步电信号的规定时间变化来建立分布,所述另外的电信号将衬底连接到偏置电压 。 当电力信号或其他电信号是AC信号时,信号的指定时间变化解决其调制,并且该方法包括设置变化和移动。

    Spectral light division and recombination configuration as well as process for the spectrally selective modulation of light
    9.
    发明授权
    Spectral light division and recombination configuration as well as process for the spectrally selective modulation of light 有权
    光谱分光和重组配置以及光谱选择性调制光的过程

    公开(公告)号:US07413310B2

    公开(公告)日:2008-08-19

    申请号:US10059888

    申请日:2002-01-29

    申请人: Claus Heine

    发明人: Claus Heine

    IPC分类号: G03B21/14

    摘要: A system and method for separating and combining three spectrums of light has a polarizing beamsplitter, an input retarder or polarizer located adjacent a first side of the polarizing beamsplitter, a spacer that can also be a splitter located adjacent a second side of the polarizing beamsplitter and a dichroic beamsplitter located adjacent a third side of the polarizing beamsplitter.

    摘要翻译: 用于分离和组合三光谱的系统和方法具有偏振分束器,邻近偏振分束器的第一侧的输入延迟器或偏振器,也可以是位于偏振分束器的第二侧附近的分离器, 位于偏振分束器第三侧附近的二向色分束器。

    Method for producing color-wheel segments
    10.
    发明授权
    Method for producing color-wheel segments 有权
    色轮段生产方法

    公开(公告)号:US07405095B2

    公开(公告)日:2008-07-29

    申请号:US11037437

    申请日:2005-01-18

    申请人: Clau Maissen

    发明人: Clau Maissen

    IPC分类号: H01L21/00

    摘要: A method for producing from a plate-shaped substrate circular sections for use for instance in a color wheel encompasses inter alia such steps as positioning predefined edge break lines in such fashion that the circular sections to be separated at a subsequent point are arranged in columns, with the circular sections within a column being so positioned relative to one another that in each case at least certain points of the inner annular edge are in contact with the outer annular edge of another circular section, thus forming part of a common predefined edge break line, while the orientation of the curvature of the circular sections of neighboring columns is reversed in alternating fashion. In a subsequent step the circular sections are separated along the predefined edge break lines.

    摘要翻译: 从板状基板制造的方法,例如在色轮中使用的圆形部分尤其包括如下步骤:将预定的边缘断裂线定位成使得在随后的点被分离的圆形部分排列成柱状, 其中柱内的圆形部分彼此相对定位,在每种情况下,内环形边缘的至少某些点与另一圆形部分的外环形边缘接触,从而形成公共预定边缘断裂线的一部分 而相邻列的圆形部分的曲率方向以交替方式反转。 在随后的步骤中,圆形部分沿着预定义的边缘断裂线分离。