摘要:
A method for fabricating a conductive bump structure of a circuit board is disclosed. The circuit board with a plurality of electrical connection pads is provided. An insulating protective layer and a resist layer are successively applied on the circuit board, wherein openings are formed in the layers at positions corresponding to the pads to expose the pads. Then, a conductive layer is formed on surfaces of the resist layer and openings, and a metal layer is formed on the conductive layer via electroplating and filled in the openings. Subsequently, the metal layer and conductive layer formed on the resist layer are removed via thinning, so as to form metal bumps on the pads. After the resist layer is removed, the metal bumps are covered by an adhesive layer to form a conductive bump structure for electrically connecting the circuit board to the external electronic component.
摘要:
A method for fabricating a printed circuit board having semiconductor components embedded therein is provided. A carrier board having at least a predetermined hole area is provided. A plurality of through holes are formed in the surround of the predetermined hole area on the carrier board. A rectangular cavity is formed by punching to remove the predetermined hole area, and a plurality of through holes are formed around the rectangular cavity The through holes facilitate receipt of the semiconductor chip and filling of a fixing material in the rectangular cavity, to avoid displacement of the semiconductor chip in subsequent fabricating steps that would otherwise cause a drawback, that is, a wiring to be formed later is improperly electrically connected to the semiconductor chip.
摘要:
A surface roughening method for an embedded semiconductor chip structure is proposed. The method includes providing a carrier board with an opening and mounting a semiconductor chip in the opening of the carrier board, the semiconductor chip having a plurality of electrode pads; and performing a surface roughening process on a surface of the electrode pads of the semiconductor chip, so as to form a rough structure on a surface of the semiconductor chip exposed by the opening of the carrier board. Thus, adhesion between the chip and a dielectric layer is improved during subsequently forming circuit build-up layers on the roughened surface of the semiconductor chip and on the surface of carrier board.
摘要:
A package structure in which a coreless substrate has direct electrical connections to a semiconductor chip and a manufacturing method thereof are disclosed. The method includes the following steps: providing a metal carrier board having a cavity; placing a chip having a plurality of electrode pads on an active surface in the cavity of a board; filling the cavity with an adhesive for fixing the chip; forming a solder mask on the active surface of the chip and the surface of the metal carrier board at the same side, wherein the solder mask has a plurality of openings to expose the electrode pads of the chip; forming a built-up structure on the solder mask and the exposed active surface of the chip in the openings; and removing the metal carrier board. In this method the metal carrier board can support the built-up structure to thereby avoid warpage.
摘要:
A package structure with circuit directly connected to semiconductor chip, which comprises: a carrier board, a semiconductor chip, and at least a built-up structure. The carrier board is formed with a through cavity therein. The semiconductor chip is mounted in the through cavity of the carrier board, and a lateral surface of the semiconductor chip is coated by an adhesive material which is not contacted by the carrier board. The built-up structure, which includes a dielectric layer, is disposed on the surface of the carrier board and an active surface of the semiconductor chip. Part surface of the dielectric layer is exposed by the through cavity. The present invention decreases warpage of the packaging structure resulting from asymmetrical built-up structures.
摘要:
A method for fabricating an electrical conductive structure of a circuit board is disclosed. The method includes providing a circuit board having a plurality of first and second electrically conductive pads; forming on the circuit board an insulating protection layer having a plurality of openings for exposing the first and second electrically conductive pads; forming a metal adhesive layer on the first and second electrically conductive pads; forming a conductive layer on the insulating protection layer and on the metal adhesive layer formed on the first and second electrically conductive pads, the conductive layer being electrical conductive to the first and second electrically conductive pads; forming on the conductive layer a resist layer having a plurality of openings for exposing the conductive layer on the second electrically conductive pads; and electroplating a conductive structure on the conductive layer on the second electrically conductive pads exposed from the openings.
摘要:
A packaging substrate having capacitors embedded therein, comprising: two capacitor disposition layers, each respectively consisting of a high dielectric layer and two first circuit layers disposed on two opposite surfaces of the high dielectric layer, wherein each of the first circuit layers has a plurality of electrode plates and a plurality of circuits; an adhesive layer disposed between the capacitor disposition layers to adhere the capacitor disposition layers to form a core board structure, wherein spaces between the circuits of every first circuit layer are filled with the adhesive layer; and a plurality of conductive through holes penetrating the capacitor disposition layers and the adhesive layer, and electrically connecting the circuits of the capacitor disposition layers respectively; wherein, pairs of the electrode plates on the opposite surfaces of each of the capacitor disposition layers are parallel and correspond to each other to form capacitors.
摘要:
A stack structure of a carrier board embedded with semiconductor components and a method for fabricating the same are proposed. The stack structure includes first and second carrier boards having a through hole respectively, first and second semiconductors component disposed in through holes of the first and second semiconductor components respectively, and a dielectric layer structure clamped between the first carrier board and the second carrier board and having a first dielectric layer formed on the first carrier board and an inactive surface of the first semiconductor component and filled in gaps between the first carrier board and the first semiconductor component, a second dielectric layer formed on the second carrier board and an inactive of the second semiconductor component and filled in gaps between the second carrier board and the second semiconductor component, and a bonding layer clamped between the first dielectric layer and the second dielectric layer.
摘要:
A stack structure of carrier boards embedded with semiconductor components and a method for fabricating the same are proposed. A first carrier board and a second carrier board, each of which having at least one through hole, are provided. A first protecting layer and a second protecting layer are formed on a surface of the first and second carrier boards respectively. At least one first semiconductor component and at least one second semiconductor component are disposed on the first and second protecting layers and accommodated in the first and second through holes respectively. A dielectric layer is laminated between the surfaces of the first and second carrier boards without the protecting layers formed thereon. Thus, a modularized package structure with reduced space waste is formed.
摘要:
Provided is a packaging substrate with a heat-dissipating structure, including a core layer with a first surface and an opposite second surface having a first metal layer and a second metal layer respectively. Portions of the first metal layer are exposed from a second cavity penetrating the core layer and second metal layer. Portions of the second metal layer are exposed from a first cavity penetrating the core layer and first metal layer. Semiconductor chips each having an active surface with electrode pads thereon and an opposite inactive surface are received in the first and second cavities and attached to the second metal layer and the first metal layer respectively. Conductive vias disposed in build-up circuit structures electrically connect to the electrode pads of the semiconductor chips. A heat-dissipating through hole penetrating the core layer and build-up circuit structures connects the metal layers and contact pads.