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公开(公告)号:US20050121803A1
公开(公告)日:2005-06-09
申请号:US11030496
申请日:2005-01-06
申请人: David Angell , Frederic Beaulieu , Takashi Hisada , Adreanne Kelly , Samuel McKnight , Hiromitsu Miyai , Kevin Petrarca , Wolfgang Sauter , Richard Volant , Caitlin Weinstein
发明人: David Angell , Frederic Beaulieu , Takashi Hisada , Adreanne Kelly , Samuel McKnight , Hiromitsu Miyai , Kevin Petrarca , Wolfgang Sauter , Richard Volant , Caitlin Weinstein
IPC分类号: H01L23/485 , H01L21/44 , H01L23/48 , H01L29/76 , H01L31/062
CPC分类号: H01L24/05 , H01L24/03 , H01L2224/05073 , H01L2224/05181 , H01L2224/05184 , H01L2224/05187 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/45144 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/3025 , H01L2924/04941 , H01L2924/00014 , H01L2924/00
摘要: Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.
摘要翻译: 公开了一种具有非平面电介质结构和在非平面电介质结构上共形形成的金属接合层的增强接合焊盘结构。 非平面电介质结构基本上在金属接合层中再现,从而形成非平面金属结构。 围绕非平面金属结构的每一个是介电材料环,其在接合焊盘探测期间提供硬停止,以限制在探测期间可以去除的接合焊盘的量。
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公开(公告)号:US20060081981A1
公开(公告)日:2006-04-20
申请号:US11271760
申请日:2005-11-10
申请人: Julie Biggs , Tien-Jen Cheng , David Eichstadt , Lisa Fanti , Jonathan Griffith , Randolph Knarr , Sarah Knickerbocker , Kevin Petrarca , Roger Quon , Wolfgang Sauter , Kamalesh Srivastava , Richard Volant
发明人: Julie Biggs , Tien-Jen Cheng , David Eichstadt , Lisa Fanti , Jonathan Griffith , Randolph Knarr , Sarah Knickerbocker , Kevin Petrarca , Roger Quon , Wolfgang Sauter , Kamalesh Srivastava , Richard Volant
CPC分类号: H01L24/05 , H01L24/03 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/04042 , H01L2224/05083 , H01L2224/05147 , H01L2224/05155 , H01L2224/05181 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/45144 , H01L2224/48453 , H01L2224/48463 , H01L2224/4847 , H01L2224/48624 , H01L2224/48644 , H01L2224/48655 , H01L2224/85205 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/04953 , H01L2924/05042 , H01L2924/12042 , H01L2924/14 , H01L2924/00014 , H01L2924/00 , H01L2924/00015
摘要: A method of forming wire bonds in (I/C) chips comprising: providing an I/C chip having a conductive pad for a wire bond with at least one layer of dielectric material overlying the pad; forming an opening through the dielectric material exposing a portion of said pad. Forming at least a first conductive layer on the exposed surface of the pad and on the surface of the opening. Forming a seed layer on the first conductive layer; applying a photoresist over the seed layer; exposing and developing the photoresist revealing the surface of the seed layer surrounding the opening; removing the exposed seed layer; removing the photoresist material in the opening revealing the seed layer. Plating at least one second layer of conductive material on the seed layer in the opening, and removing the first conductive layer on the dielectric layer around the opening. The invention also includes the resulting structure.
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3.
公开(公告)号:US20050062170A1
公开(公告)日:2005-03-24
申请号:US10666775
申请日:2003-09-18
申请人: Julie Biggs , Tien-Jen Cheng , David Eichstadt , Lisa Fanti , Jonathan Griffith , Randolph Knarr , Sarah Knickerbocker , Kevin Petrarca , Roger Quon , Wolfgang Sauter , Kamalesh Srivastava , Richard Volant
发明人: Julie Biggs , Tien-Jen Cheng , David Eichstadt , Lisa Fanti , Jonathan Griffith , Randolph Knarr , Sarah Knickerbocker , Kevin Petrarca , Roger Quon , Wolfgang Sauter , Kamalesh Srivastava , Richard Volant
IPC分类号: H01L21/60 , H01L23/485 , H01L21/44 , H01L23/48 , H01L29/40
CPC分类号: H01L24/05 , H01L24/03 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/04042 , H01L2224/05083 , H01L2224/05147 , H01L2224/05155 , H01L2224/05181 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/45144 , H01L2224/48453 , H01L2224/48463 , H01L2224/4847 , H01L2224/48624 , H01L2224/48644 , H01L2224/48655 , H01L2224/85205 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/04953 , H01L2924/05042 , H01L2924/12042 , H01L2924/14 , H01L2924/00014 , H01L2924/00 , H01L2924/00015
摘要: A method of forming wire bonds in (I/C) chips comprising: providing an I/C chip having a conductive pad for a wire bond with at least one layer of dielectric material overlying the pad; forming an opening through the dielectric material exposing a portion of said pad. Forming at least a first conductive layer on the exposed surface of the pad and on the surface of the opening. Forming a seed layer on the first conductive layer; applying a photoresist over the seed layer; exposing and developing the photoresist revealing the surface of the seed layer surrounding the opening; removing the exposed seed layer; removing the photoresist material in the opening revealing the seed layer. Plating at least one second layer of conductive material on the seed layer in the opening, and removing the first conductive layer on the dielectric layer around the opening. The invention also includes the resulting structure.
摘要翻译: 一种在(I / C)芯片中形成引线键合的方法,包括:提供具有导电焊盘的I / C芯片,该导电焊盘与覆盖该焊盘的至少一层电介质材料进行引线接合; 通过暴露所述垫的一部分的电介质材料形成开口。 在衬垫的暴露表面和开口表面上形成至少第一导电层。 在第一导电层上形成种子层; 在种子层上施加光致抗蚀剂; 曝光和显影光致抗蚀剂,其显露出围绕开口的种子层的表面; 去除暴露的种子层; 去除开口中的光致抗蚀剂材料,露出种子层。 在开口中的种子层上电镀至少一层第二导电材料层,以及去除围绕开口的电介质层上的第一导电层。 本发明还包括所得到的结构。
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公开(公告)号:US07485964B2
公开(公告)日:2009-02-03
申请号:US11399579
申请日:2006-04-06
申请人: John M. Cotte , Kenneth John McCullough , Wayne Martin Moreau , Kevin Petrarca , John P. Simons , Charles J. Taft , Richard Volant
发明人: John M. Cotte , Kenneth John McCullough , Wayne Martin Moreau , Kevin Petrarca , John P. Simons , Charles J. Taft , Richard Volant
CPC分类号: H01L21/02118 , H01L21/0212 , H01L21/02126 , H01L21/02203 , H01L21/02282 , H01L21/31058 , H01L21/312 , H01L21/3121 , H01L21/31695 , H01L21/7682 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , Y10T428/249978 , Y10T428/24999 , H01L2924/00
摘要: A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.
摘要翻译: 在将二氧化碳保持在液态或超临界状态的热力学条件下,通过使低介电常数聚合物与液体或超临界二氧化碳接触而形成的电介质材料,其中形成多孔产品。 因此,热力学条件改变为环境,其中二氧化碳从孔中逸出并被空气替代。
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5.
公开(公告)号:US20060124927A1
公开(公告)日:2006-06-15
申请号:US10905013
申请日:2004-12-09
申请人: Robert Groves , Peter Gruber , Kevin Petrarca , Richard Volant , George Walker
发明人: Robert Groves , Peter Gruber , Kevin Petrarca , Richard Volant , George Walker
CPC分类号: H05K3/3468 , G01R1/07314 , G01R3/00 , H01L21/4853 , H01L21/6835 , H01L24/11 , H01L2224/13099 , H01L2224/16225 , H01L2924/00011 , H01L2924/00014 , H01L2924/01013 , H01L2924/01018 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/01058 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/01075 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/19041 , H01L2924/19042 , H05K3/325 , H05K2201/09745 , H05K2201/10734 , H05K2203/0113 , H05K2203/0338 , H05K2203/128 , H05K2203/162 , H05K2203/167 , H01L2224/0401
摘要: Methods of forming a conductive structure on a substrate prior to packaging, and a test probe structure generated according to the method, are disclosed. The conductive structure includes a high aspect ratio structure formed by injected molded solder. The invention can be applied to form passive elements and interconnects on a conventional semiconductor substrate after the typical BEOL, and prior to packaging. The method may provide better electromigration characteristics, lower resistivity, and higher Q factors for conductive structures. In addition, the method is backwardly compatible and customizable.
摘要翻译: 公开了在封装之前在基板上形成导电结构的方法和根据该方法生成的测试探针结构。 导电结构包括通过注射成型的焊料形成的高纵横比结构。 本发明可以应用于在典型的BEOL之后以及在封装之前在常规半导体衬底上形成无源元件和互连。 该方法可以为导电结构提供更好的电迁移特性,较低的电阻率和更高的Q因子。 此外,该方法可以向后兼容并可定制。
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公开(公告)号:US20070181974A1
公开(公告)日:2007-08-09
申请号:US11307404
申请日:2006-02-06
申请人: Douglas Coolbaugh , Timothy Dalton , Daniel Edelstein , Ebenezer Eshun , Jeffrey Gambino , Kevin Petrarca , Anthony Stamper , Richard Volant
发明人: Douglas Coolbaugh , Timothy Dalton , Daniel Edelstein , Ebenezer Eshun , Jeffrey Gambino , Kevin Petrarca , Anthony Stamper , Richard Volant
CPC分类号: H01L28/20 , H01L23/5228 , H01L23/53238 , H01L23/53295 , H01L27/0688 , H01L2924/0002 , H01L2924/00
摘要: Resistors that avoid the problems of miniaturization of semiconductor devices and a related method are disclosed. In one embodiment, a resistor includes a planar resistor material that extends vertically within at least one metal layer of a semiconductor device. In another embodiment, a resistor includes a resistor material layer extending between a first bond pad and a second bond pad of a semiconductor device. The two embodiments can be used alone or together. A related method for generating the resistors is also disclosed.
摘要翻译: 公开了避免半导体器件小型化的问题的电阻器及相关方法。 在一个实施例中,电阻器包括在半导体器件的至少一个金属层内垂直延伸的平面电阻器材料。 在另一个实施例中,电阻器包括在半导体器件的第一接合焊盘和第二接合焊盘之间延伸的电阻材料层。 这两个实施方案可以单独使用或一起使用。 还公开了用于产生电阻器的相关方法。
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公开(公告)号:US20050167780A1
公开(公告)日:2005-08-04
申请号:US10768773
申请日:2004-01-29
申请人: Daniel Edelstein , Panayotis Andricacos , John Cotte , Hariklia Deligianni , John Magerlein , Kevin Petrarca , Kenneth Stein , Richard Volant
发明人: Daniel Edelstein , Panayotis Andricacos , John Cotte , Hariklia Deligianni , John Magerlein , Kevin Petrarca , Kenneth Stein , Richard Volant
IPC分类号: H01F41/04 , H01F17/00 , H01L21/02 , H01L23/485 , H01L23/522 , H01L23/532 , H01L27/08 , H01L23/48 , H01L21/8222
CPC分类号: H01L24/12 , H01L23/5227 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L27/08 , H01L28/10 , H01L2224/0401 , H01L2224/04042 , H01L2224/05007 , H01L2224/05014 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05084 , H01L2224/05555 , H01L2224/05557 , H01L2224/05558 , H01L2224/05624 , H01L2224/05644 , H01L2224/13007 , H01L2224/13022 , H01L2224/13023 , H01L2224/13099 , H01L2224/45124 , H01L2224/45144 , H01L2224/48624 , H01L2224/48644 , H01L2224/48724 , H01L2224/48744 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/19042 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要: An inductor and a method of forming and the inductor, the method including: (a) providing a semiconductor substrate; (b) forming a dielectric layer on a top surface of the substrate; (c) forming a lower trench in the dielectric layer; (d) forming a resist layer on a top surface of the dielectric layer; (e) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and (f) completely filling the lower trench at least partially filling the upper trench with a conductor in order to form the inductor. The inductor including a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending a fixed distance into a dielectric layer formed on a semiconductor substrate and an upper portion extending above said dielectric layer; and means to electrically contact said inductor.
摘要翻译: 一种电感器及其形成方法和电感器,所述方法包括:(a)提供半导体衬底; (b)在所述基板的顶表面上形成电介质层; (c)在介电层中形成下沟槽; (d)在介电层的顶表面上形成抗蚀剂层; (e)在所述抗蚀剂层中形成上沟槽,所述上沟槽对准所述下沟槽,所述上沟槽的底部通向所述下沟槽; 和(f)用导体完全填充下沟槽至少部分地填充上沟槽,以形成电感器。 所述电感器包括顶表面,底表面和侧壁,所述电感器的下部将固定距离延伸到形成在半导体衬底上的电介质层和在所述电介质层上方延伸的上部; 以及用于电接触所述电感器的装置。
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公开(公告)号:US06489857B2
公开(公告)日:2002-12-03
申请号:US09727165
申请日:2000-11-30
IPC分类号: H01P110
CPC分类号: H01H59/0009 , H01H2001/0084
摘要: A micro electromechanical switch has a guidepost formed upon a substrate. A signal transmission line is formed on the substrate, with the signal transmission line having a gap and forming an open circuit. The switch further includes a switch body having a via opening formed therein, with the switch body being movably disposed along an length defined by the guide post. The guidepost is partially surrounded by the via opening.
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公开(公告)号:US20060180922A1
公开(公告)日:2006-08-17
申请号:US11399579
申请日:2006-04-06
申请人: John Cotte , Kenneth McCullough , Wayne Moreau , Kevin Petrarca , John Simons , Charles Taft , Richard Volant
发明人: John Cotte , Kenneth McCullough , Wayne Moreau , Kevin Petrarca , John Simons , Charles Taft , Richard Volant
IPC分类号: H01L23/14
CPC分类号: H01L21/02118 , H01L21/0212 , H01L21/02126 , H01L21/02203 , H01L21/02282 , H01L21/31058 , H01L21/312 , H01L21/3121 , H01L21/31695 , H01L21/7682 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , Y10T428/249978 , Y10T428/24999 , H01L2924/00
摘要: A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.
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公开(公告)号:US20070059951A1
公开(公告)日:2007-03-15
申请号:US10573561
申请日:2003-09-30
申请人: Richard Volant , Kevin Petrarca , George Walker
发明人: Richard Volant , Kevin Petrarca , George Walker
IPC分类号: H05K1/00
CPC分类号: H01L25/0657 , H01L21/568 , H01L21/6835 , H01L23/5387 , H01L24/24 , H01L24/82 , H01L25/0652 , H01L25/50 , H01L2221/68359 , H01L2221/68372 , H01L2224/04042 , H01L2224/04105 , H01L2224/05554 , H01L2224/18 , H01L2224/24137 , H01L2224/48091 , H01L2224/48227 , H01L2224/49431 , H01L2224/49433 , H01L2224/73209 , H01L2224/73259 , H01L2224/73267 , H01L2224/82005 , H01L2224/9222 , H01L2225/06524 , H01L2225/06527 , H01L2225/06579 , H01L2225/06589 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/19041 , H01L2924/19042 , H01L2924/3511 , H01L2924/00014 , H01L2924/00
摘要: A three-dimensional package consisting of a plurality of folded integrated circuit chips (100, 110, 120) is described wherein at least one chip provides interconnect pathways for electrical connection to additional chips of the stack, and at least one chip (130) is provided with additional interconnect wiring to a substrate (500), package or printed circuit board. Further described, is a method of providing a flexible arrangement of interconnected chips that are folded over into a three-dimensional arrangements to consume less aerial space when mounted on a substrate, second-level package or printed circuit board.
摘要翻译: 描述了由多个折叠集成电路芯片(100,110,120)组成的三维封装,其中至少一个芯片提供用于与堆叠的附加芯片的电连接的互连路径,并且至少一个芯片(130)是 提供与衬底(500),封装或印刷电路板的附加互连布线。 进一步描述的是提供互连芯片的柔性布置的方法,其被折叠成三维布置以在安装在基板,二级封装或印刷电路板上时消耗较少的空中空间。
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