公开(公告)号：US20140235940A1

公开(公告)日：2014-08-21

申请号：US14347242

申请日：2012-09-13

申请人： Weidong Wang ,  Fushang Xue ,  Aihua Chen ,  Benquan Yang

发明人： Weidong Wang ,  Fushang Xue ,  Aihua Chen ,  Benquan Yang

IPC分类号： A61M16/04 ,  A61B1/267 ,  A61B1/06 ,  A61B1/00 ,  A61B1/05

CPC分类号： A61M16/0488 ,  A61B1/00048 ,  A61B1/00052 ,  A61B1/05 ,  A61B1/0676 ,  A61B1/0684 ,  A61B1/267 ,  A61B1/2673

摘要： A S-shaped visible hard intubating stylet comprises a LCD display, a handler and a hard stylet which are connected successively; the hard stylet has an outer end provided with a camera and a light emitter which are connecting to the LCD display, respectively; the hard stylet is formed to comprise, from one end to the other end, successively, a first linear section, an arc-shaped section, a circular arc-shaped section and a second linear section; a tangential direction of a tail end of the circular arc-shaped section that is adjacent to the arc-shaped section, and an axis direction of the handler, have an included angle which is ranging from no 20°; the circular arc-shaped section has a circular arc radius which is ranging from 45 mm to 75 mm; the circular arc-shaped section has a circular arc corresponding to a central angle which is ranging from 60° to 80°; the second linear section and the axis direction of the handler have an included angle which is ranging from 50° to 70°.

摘要翻译： S形可见硬插管探针包括连续连接的LCD显示器，处理器和硬探针; 硬探针具有分别连接到LCD显示器的相机和发光器的外端; 硬通孔被形成为从一端到另一端依次包括第一直线部分，弧形部分，圆弧形部分和第二直线部分; 与弧形部分相邻的圆弧形部分的尾端和处理器的轴线方向的切线方向具有不大于20°的夹角; 圆弧形部分的圆弧半径为45mm至75mm; 圆弧形部分具有对应于中心角度为60°至80°的圆弧; 处理器的第二线性部分和轴线方向具有范围从50°至70°的夹角。

公开(公告)号：US07658800B2

公开(公告)日：2010-02-09

申请号：US11602568

申请日：2006-11-20

申请人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

发明人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

摘要翻译： 描述了半导体工件处理反应器，其包括限定沉积区域的处理室; 基座，其在所述处理室的所述沉积区域内支撑并移动待处理的半导体工件; 以及气体分配组件，其安装在所述处理室内并且限定彼此分离的第一和第二反应气体通道，并且将两个反应气体输送到位于所述气体分配组件附近的半导体工件。

公开(公告)号：US20080092815A1

公开(公告)日：2008-04-24

申请号：US11602568

申请日：2006-11-20

申请人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

发明人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

摘要翻译： 描述了半导体工件处理反应器，其包括限定沉积区域的处理室; 基座，其在所述处理室的所述沉积区域内支撑并移动待处理的半导体工件; 以及气体分配组件，其安装在处理室内并且限定彼此分离的第一和第二反应气体通道，并将两个反应气体输送到位于气体分配组件附近的半导体工件。

公开(公告)号：US20070031236A1

公开(公告)日：2007-02-08

申请号：US11440747

申请日：2006-05-24

申请人： AiHua Chen

发明人： AiHua Chen

IPC分类号： H01L21/68

CPC分类号： H01L21/6719 ,  H01L21/67742

摘要： A semiconductor processing system and related methodology is disclosed and which includes a processing chamber having an internal cavity and a transfer port; a transfer chamber which is positioned adjacent to the processing chamber; and a transfer apparatus having at least two extendible arms which are positioned within the transfer chamber, and wherein each of the extendible arms carry a semiconductor work piece into and out of the processing chamber by way of the transfer port, and wherein the at least two extendible arms are selectively vertically moveable, and further are each selectively moveable in the direction of the transfer port.

摘要翻译： 公开了一种半导体处理系统和相关方法，其包括具有内部空腔和转移端口的处理室; 位于处理室附近的传送室; 以及传送装置，其具有位于所述传送室内的至少两个可延伸臂，并且其中每个所述可延伸臂通过所述传送端口将半导体工件运送到和离开所述处理室，并且其中所述至少两个 可伸缩臂选择性地可垂直移动，并且还可以在传送端口的方向上选择性地移动。

公开(公告)号：US06982214B2

公开(公告)日：2006-01-03

申请号：US10263105

申请日：2002-10-01

申请人： Li Fu ,  Sheeba J. Panayil ,  Shulin Wang ,  Christopher G. Quentin ,  Lee Luo ,  Aihua Chen ,  Xianzhi Tao

发明人： Li Fu ,  Sheeba J. Panayil ,  Shulin Wang ,  Christopher G. Quentin ,  Lee Luo ,  Aihua Chen ,  Xianzhi Tao

IPC分类号： H01L21/20

CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

摘要： Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.

摘要翻译： 形成轻掺磷硅膜的方法。 提供基板。 使用包含磷源气体和乙硅烷气体的工艺气体在衬底上形成轻掺磷硅膜。 稀释的磷源气体的磷浓度为1％。 磷源气体和乙硅烷气体的流量比小于1:100。 轻掺磷硅膜的磷掺杂浓度小于1×10 20原子/ cm 3。

公开(公告)号：US06713127B2

公开(公告)日：2004-03-30

申请号：US10041026

申请日：2001-12-28

申请人： Janardhanan Anand Subramony ,  Yoshitaka Yokota ,  Ramaseshan Suryanarayanan Iyer ,  Lee Luo ,  Aihua Chen

发明人： Janardhanan Anand Subramony ,  Yoshitaka Yokota ,  Ramaseshan Suryanarayanan Iyer ,  Lee Luo ,  Aihua Chen

IPC分类号： C23C1640

CPC分类号： C23C16/45512 ,  C23C16/308 ,  C23C16/401 ,  C23C16/56

摘要： An oxide and an oxynitride films and their methods of fabrication are described. The oxide or the oxynitride film is grown on a substrate that is placed in a deposition chamber. A silicon source gas (or a silicon source gas with a nitridation source gas) and an oxidation source gas are decomposed in the deposition chamber using a thermal energy source. A silicon oxide (or an oxynitride) film is formed above the substrate wherein total pressure for the deposition chamber is maintained in the range of 50 Torr to 350 Torr and wherein a flow ratio for the silicon source gas (or the silicon source gas with the nitridiation source gas) and the oxidation source gas is in the range of 1:50 to 1:10000 during a deposition process.

摘要翻译： 描述了氧化物和氧氮化物膜及其制造方法。 氧化物或氧氮化物膜在放置在沉积室中的衬底上生长。 使用热能源在沉积室中分解硅源气体（或具有氮化源气体的硅源气体）和氧化源气体。 在基板上方形成氧化硅（或氮氧化物）膜，其中沉积室的总压力保持在50Torr至350Torr的范围内，并且其中硅源气体（或硅源气体 氮化源气体），氧化源气体在沉积过程中为1:50至1：10000。

公开(公告)号：US6143084A

公开(公告)日：2000-11-07

申请号：US45165

申请日：1998-03-19

申请人： Steven T. Li ,  Andrew J. Ruspini ,  Henry Ho ,  Yu Chang ,  Aihua Chen ,  Binh Bui

发明人： Steven T. Li ,  Andrew J. Ruspini ,  Henry Ho ,  Yu Chang ,  Aihua Chen ,  Binh Bui

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  C23F1/02

CPC分类号： H01J37/32862 ,  H01J37/321 ,  H01J2237/335

摘要： An apparatus comprising a semiconductor processing chamber, a plasma generator, and a pipe connecting a semiconductor processing chamber and the plasma generator. The plasma generator includes a generation chamber, a radio frequency generator which generates an ion plasma within the generation chamber, and a magnetic device which confines the plasma primarily within a center region of the generation chamber.

摘要翻译： 一种包括半导体处理室，等离子体发生器和连接半导体处理室和等离子体发生器的管道的装置。 等离子体发生器包括发电室，在发电室内产生离子等离子体的射频发生器以及将等离子体主要限制在发电室的中心区域内的磁性装置。

公开(公告)号：US5908334A

公开(公告)日：1999-06-01

申请号：US881528

申请日：1997-06-24

申请人： Aihua Chen ,  Vijay Parkhe ,  Sergio Edelstein

发明人： Aihua Chen ,  Vijay Parkhe ,  Sergio Edelstein

IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00 ,  H01R13/24

CPC分类号： H01L21/6831 ,  H01L21/6833

摘要： In accordance with the present invention, two types of polymeric dielectric systems useful in construction of a high-temperature electrostatic chuck are disclosed. Further, a high temperature power connection for transmitting power from a supply source to a conductive extension from the electrostatic chuck conductive layer is described. The first polymeric dielectric system provides for the use of polyimide films which do not require an adhesive to adhere to an underlying substrate support platen. The self-adhering polyimide film comprises from one to three layers of polyimide material, wherein at least one outer layer of polyimide material is thermoplastic in nature, for the purpose of adhesion and/or encapsulation. When the film comprises two layers, one of the layers is a non-thermoplastic polyimide having an increased glass transition temperature of about 350.degree. C. or greater. When the film comprises three layers, typically the center layer is the non-thermoplastic polyimide, with the upper and lower layers being a thermoplastic polyimide. The thermoplastic polyimide is placed in contact with a substrate to which it is to bond (such as the surface of a conductive platen used to support a semiconductor workpiece) and heat and pressure are applied to cause the thermoplastic polyimide to flow and bond to the substrate. The second polymeric dielectric system provides for the use of a liquid polyamic acid or modified polyimide precursor which is cured in place against a substrate to provide a polyimide-comprising film adhered to the substrate. Depending on the composition of the polyamic acid or modified polyimide precursor, various degrees of crystallinity can be achieved in the cured, solid polyimide.

摘要翻译： 根据本发明，公开了可用于构建高温静电卡盘的两种类型的聚合介电系统。 此外，描述了用于从静电卡盘导电层将电源从电源传输到导电延伸部分的高温电源连接。 第一聚合物介电系统提供使用不需要粘合剂的聚酰亚胺膜粘附到下面的基底支撑台板上。 自粘聚酰亚胺膜包含一层至三层聚酰亚胺材料，其中至少一层聚酰亚胺材料本质上是热塑性的，用于粘合和/或封装。 当膜包含两层时，其中一层是玻璃化转变温度升高约350℃或更高的非热塑性聚酰亚胺。 当膜包括三层时，通常中心层是非热塑性聚酰亚胺，上层和下层是热塑性聚酰亚胺。 将热塑性聚酰亚胺与要与其键合的基底（例如用于支撑半导体工件的导电平台的表面）接触，并施加热和压力以使热塑性聚酰亚胺流动并结合到基底 。 第二聚合物介电系统提供使用液体聚酰胺酸或改性的聚酰亚胺前体，其固化在基底上以提供粘附到基底上的含聚酰亚胺的膜。 根据聚酰胺酸或改性聚酰亚胺前体的组成，可以在固化的固体聚酰亚胺中获得不同程度的结晶度。

公开(公告)号：US5536330A

公开(公告)日：1996-07-16

申请号：US441239

申请日：1995-05-15

申请人： Aihua Chen ,  Robert A. Chapman

发明人： Aihua Chen ,  Robert A. Chapman

IPC分类号： C23C14/24 ,  B01J3/00 ,  C23C14/56 ,  C23C16/44 ,  C30B23/02 ,  C30B25/14 ,  H01L21/203 ,  H01L21/205 ,  B08B5/04 ,  B08B9/00

CPC分类号： C23C16/4408 ,  B01J3/006 ,  C23C14/564 ,  C23C16/4412 ,  C30B23/002 ,  C30B25/14

摘要： A method for purging a vacuum chamber suitable for use in the production of integrated circuit structures on semiconductor wafers. The method comprises providing the chamber to be purged and flowing a heated, non-reactive gas, such as argon gas, through the chamber. The non-reactive gas is heated to a temperature of at least 90.degree. C. Further, the chamber is heated to maintain it at a temperature of at least 90.degree. C. while flowing the gas therethrough. Flowing the heated non-reactive gas through the chamber causes released impurities or contaminants to be efficiently swept from the chamber in the non-reactive gas flow. After flowing the heated gas through the heated chamber, the flow of gas is interrupted and the chamber, while still hot, is pumped down to a vacuum of about 5.times.10.sup.-7 to determine whether or not the chamber has a leakage problem. The presence of a leakage problem may be determined by comparing the pumping to past pumping of similar sized chambers, or by measuring the partial pressure of common gases such as nitrogen and/or oxygen. If the partial pressure of oxygen is higher than about 5.times.10.sup.-8 and the partial pressure of nitrogen is higher than 2.times.10.sup.-7, the vacuum chamber can be considered to have a leakage problem. Pumping times may, therefore, be shortened by the use of such screening for leakage problems while the vacuum chamber is still hot.

摘要翻译： 一种适用于在半导体晶片上制造集成电路结构的真空室的清洗方法。 该方法包括提供待吹扫的室，并将加热的非反应性气体（例如氩气）流过室。 将非反应性气体加热到至少90℃的温度。此外，在使气体流过其中的同时，将室保持在至少90℃的温度。 将加热的非反应性气体流过室引起释放的杂质或污染物在非反应性气体流中有效地从室中扫除。 在将加热的气体流经加热室之后，气体流动被中断，并且腔室仍然很热被泵送到大约5×10 -7的真空度以确定腔室是否具有泄漏问题。 泄漏问题的存在可以通过将抽吸与类似尺寸的室的过去泵送进行比较，或者通过测量常见气体如氮气和/或氧气的分压来确定。 如果氧的分压高于约5×10 -8，氮的分压高于2×10-7，则认为真空室具有泄漏问题。 因此，在真空室仍然很热的情况下，通过使用这种泄漏问题的筛选来缩短抽水时间。

公开(公告)号：US09005552B2

公开(公告)日：2015-04-14

申请号：US13278990

申请日：2011-10-21

申请人： Masahiro Watanabe ,  Hisao Yamashita ,  Kazutoshi Higashiyama ,  Toshihiro Miyao ,  Aihua Chen

发明人： Masahiro Watanabe ,  Hisao Yamashita ,  Kazutoshi Higashiyama ,  Toshihiro Miyao ,  Aihua Chen

IPC分类号： B01J8/00 ,  H01M8/06 ,  B01J23/755 ,  B01J35/08 ,  B01J37/03 ,  B01J37/34 ,  C01B3/38 ,  C01B3/48 ,  C01B3/58 ,  B01J8/02 ,  B01J8/08 ,  B01J19/00 ,  B01J23/00 ,  B01J35/00 ,  B01J35/02 ,  B01J35/04 ,  C23C4/00 ,  C23C4/04 ,  C23C4/06 ,  C23C4/12 ,  B01J23/40 ,  B01J35/10

CPC分类号： H01M8/0668 ,  B01J23/40 ,  B01J23/755 ,  B01J35/006 ,  B01J35/04 ,  B01J35/08 ,  B01J35/1019 ,  B01J35/1061 ,  B01J37/036 ,  B01J37/349 ,  C01B3/38 ,  C01B3/48 ,  C01B3/586 ,  C01B2203/0233 ,  C01B2203/0238 ,  C01B2203/0244 ,  C01B2203/025 ,  C01B2203/0283 ,  C01B2203/0445 ,  C01B2203/047 ,  C01B2203/066 ,  C01B2203/1241 ,  C01B2203/1258 ,  Y02E60/50 ,  Y02P20/52 ,  Y02P70/56

摘要： Provided is a new catalyst capable of removing carbon monoxide economically without adding particular reaction gas externally. Also provided are a process for producing and an apparatus using such a catalyst. Impregnation of a Ni—Al composite oxide precursor of a nonstoichiometric composition prepared by the solution-spray plasma technique with a ruthenium salt to be supported and performing reduction treatment allows CO methanation reaction to selectively proceed even in the high-temperature range in which CO2 methanation reaction and reverse water-gas-shift reaction proceed preferentially with conventional catalysts. Selective CO methanation reaction occurs reproducibly with another Ni—Al composite oxide precursor or an additive metallic species. Also, the low-temperature activity of CO methanation reaction can be improved through steps different from conventional catalyst production processes in producing such a catalyst material, whereby the temperature window the resulting catalyst material has can be utilized most effectively.

摘要翻译： 提供了能够经济地除去一氧化碳而不在外部添加特定反应气体的新型催化剂。 还提供了一种生产方法和使用这种催化剂的装置。 通过溶液喷射等离子体技术制备的非化学计量组合物的Ni-Al复合氧化物前体用待负载的钌盐进行还原处理，即使在CO 2甲烷化的高温范围内也可以选择性地进行CO甲烷化反应 反应和反向水煤气变换反应优先用常规催化剂进行。 选择性CO甲烷化反应与另一种Ni-Al复合氧化物前体或添加金属物质可再现发生。 此外，通过与生产这种催化剂材料的常规催化剂制备方法不同的步骤，可以提高CO甲烷化反应的低温活性，由此可以最有效地利用所得催化剂材料具有的温度窗口。