公开(公告)号：US06369992B1

公开(公告)日：2002-04-09

申请号：US08909687

申请日：1997-08-12

Applicant: Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Masashi Sahashi ,  Tadahiko Kobayashi

Inventor： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Masashi Sahashi ,  Tadahiko Kobayashi

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3977 ,  G11B2005/3996

Abstract: A magneto-resistance effect head records and reproduces recorded magnetic material. The magneto-resistance effect head has a magneto-resistance effect film connected to a pair of leads. Additionally, a magnetic yoke, with a first and second magnetic yoke member, directs a signal magnetic field from a recording medium to the magneto-resistance effect film. The magneto-resistance effect head is constructed such that the first and second magnetic yoke members have surfaces that face the recording medium. The surfaces of the first and second magnetic yoke members have a magnetic gap between them. Additionally, the magneto-resistance effect film is recessed from the medium facing surfaces by a predetermined distance. Moreover, the first and second magnetic yoke members are aligned almost in parallel with the magnetic flux flow from the recording medium to the first magnetic yoke member, the magneto-resistance effect film, and the second magnetic yoke member.

Abstract translation: 磁阻效应头记录和再现记录的磁性材料。 磁阻效应头具有连接到一对引线的磁阻效应膜。 此外，具有第一和第二磁轭构件的磁轭将来自记录介质的信号磁场引导到磁阻效应膜。 磁阻效应头被构造成使得第一和第二磁轭构件具有面向记录介质的表面。 第一和第二磁轭构件的表面之间具有磁隙。 此外，磁阻效应膜从面向介质的表面凹陷预定距离。 此外，第一和第二磁轭构件几乎与从记录介质到第一磁轭构件，磁阻效应膜和第二磁轭构件的磁通流平行排列。

公开(公告)号：US6115216A

公开(公告)日：2000-09-05

申请号：US780328

申请日：1997-01-08

Applicant: Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

Inventor： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

IPC: G11B5/31 ,  G11B5/39 ,  G11B5/33 ,  G11B5/265

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/3996 ,  G11B5/3116 ,  G11B5/3163

Abstract: A magnetoresistance effect type head comprises a magnetoresistance effect film having a pair of leads connected thereto and possessing a magnetic field responding part and a pair of upper and lower shield layers having a magnetoresistance effect film nipped therebetween through the medium of a magnetic gap-forming insulating film. This magnetoresistance effect type head satisfies the relations, W.sub.s

Abstract translation: 磁阻效应型头包括具有连接到其上的一对引线并具有磁场响应部分的磁阻效应膜，以及一对具有磁阻效应膜的上下屏蔽层，其间通过磁隙形成绝缘体 电影。 该磁阻效应型磁头满足Ws

公开(公告)号：US5583474A

公开(公告)日：1996-12-10

申请号：US248679

申请日：1994-05-25

Applicant: Tetsuhiko Mizoguchi ,  Toshiro Sato ,  Masashi Sahashi ,  Michio Hasegawa ,  Hiroshi Tomita ,  Atsuhito Sawabe

Inventor： Tetsuhiko Mizoguchi ,  Toshiro Sato ,  Masashi Sahashi ,  Michio Hasegawa ,  Hiroshi Tomita ,  Atsuhito Sawabe

IPC: G05F1/40 ,  H01F5/00 ,  H01F17/00 ,  H01F27/30 ,  H01F41/00

CPC classification number: H01F17/0006 ,  H01F2017/0066 ,  H01F2017/0086 ,  Y10T29/4902

Abstract: Disclosed herein is a planar magnetic element comprising a substrate, a first magnetic layer arranged over the substrate, a first insulation layer arranged over the first magnetic layer, a planer coil formed of a conductor, having a plurality of turns, arranged over the first insulation layer and having a gap aspect ratio of at least 1, the gap aspect ratio being the ratio of the thickness of the conductor to the gap between any adjacent two of the turns, a second insulation layer arranged over the planar coil, and a second magnetic layer arranged over the second insulation layer. When used as an inductor, the planar magnetic element has a great quality coefficient Q. When used as a transformer, it has a large gain and a high voltage ratio. Since the element is small and thin, it is suitable for use in an integrated circuit, and can greatly contribute to miniaturization of electronic devices.

公开(公告)号：US5187561A

公开(公告)日：1993-02-16

申请号：US545870

申请日：1990-06-29

Applicant: Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuhito Sawabe ,  Takashi Kawanoue ,  Yoshiko Kohanawa ,  Shuichi Komatsu

Inventor： Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuhito Sawabe ,  Takashi Kawanoue ,  Yoshiko Kohanawa ,  Shuichi Komatsu

IPC: C30B25/14 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/52 ,  H01L23/532 ,  H01L27/04 ,  H01L29/41

CPC classification number: H01L21/28556 ,  H01L21/32051 ,  H01L23/532 ,  H01L23/53219 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53242 ,  H01L23/53247 ,  H01L2924/0002

Abstract: The close-packed plane of a single crystal forming an electrode line such as electrodes or lines of a semiconductor device whose active regions are reduced in size, i.e., highly integrated, is arranged parallel to the longitudinal direction of the line; or in the case of a polycrystalline electrode line, the angle formed between the normal line direction of the close-packed plane of its crystal grains and that of the electrode line is arranged to be 80.degree. or less.

公开(公告)号：US06404317B1

公开(公告)日：2002-06-11

申请号：US08701996

申请日：1996-08-23

Applicant: Tetsuhiko Mizoguchi ,  Toshiro Sato ,  Masashi Sahashi ,  Michio Hasegawa ,  Hiroshi Tomita ,  Atsuhito Sawabe

Inventor： Tetsuhiko Mizoguchi ,  Toshiro Sato ,  Masashi Sahashi ,  Michio Hasegawa ,  Hiroshi Tomita ,  Atsuhito Sawabe

IPC: H01F500

CPC classification number: H01F17/0006 ,  H01F2017/0066 ,  H01F2017/0086 ,  Y10T29/4902

Abstract: Disclosed herein is a planar magnetic element comprising a substrate, a first magnetic layer arranged over the substrate, a first insulation layer arranged over the first magnetic layer, a planer coil formed of a conductor, having a plurality of turns, arranged over the first insulation layer and having a gap aspect ratio of at least 1, the gap aspect ratio being the ratio of the thickness of the conductor to the gap between any adjacent two of the turns, a second insulation layer arranged over the planar coil, and a second magnetic layer arranged over the second insulation layer. When used as an inductor, the planar magnetic element has a great quality coefficient Q. When used as a transformer, it has a large gain and a high voltage ratio. Since the element is small and thin, it is suitable for use in an integrated circuit, and can greatly contribute to miniaturization of electronic devices.

Abstract translation: 本文公开了一种平面磁性元件，包括基板，布置在基板上的第一磁性层，布置在第一磁性层上的第一绝缘层，由导体形成的具有多个匝的平面线圈，布置在第一绝缘层 并且具有至少为1的间隙宽高比，间隙宽高比是导体的厚度与任何相邻的两个匝之间的间隙的比率，布置在平面线圈上的第二绝缘层和第二磁性 层布置在第二绝缘层上。 当用作电感器时，平面磁性元件具有很高的质量系数Q.当用作变压器时，其具有大的增益和高电压比。 由于元件小而薄，因此适用于集成电路，并且可以极大地有助于电子设备的小型化。

公开(公告)号：US5702832A

公开(公告)日：1997-12-30

申请号：US652850

申请日：1996-05-23

Applicant: Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi

Inventor： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi

IPC: G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11B5/66 ,  B32B15/01

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/324 ,  H01F10/325 ,  H01F10/3268 ,  H01L43/08 ,  H01L43/10 ,  G11B2005/3996 ,  G11B5/3932 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/1121 ,  Y10T428/12465 ,  Y10T428/12493 ,  Y10T428/12542 ,  Y10T428/12576 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/1266 ,  Y10T428/12674 ,  Y10T428/1275 ,  Y10T428/12806 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12931

Abstract: It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.

公开(公告)号：US5688605A

公开(公告)日：1997-11-18

申请号：US652796

申请日：1996-05-23

Applicant: Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi

Inventor： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi

IPC: G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/324 ,  H01F10/325 ,  H01F10/3268 ,  H01L43/08 ,  H01L43/10 ,  G11B2005/3996 ,  G11B5/3932 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/1121 ,  Y10T428/12465 ,  Y10T428/12493 ,  Y10T428/12542 ,  Y10T428/12576 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/1266 ,  Y10T428/12674 ,  Y10T428/1275 ,  Y10T428/12806 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12931

Abstract: It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.

Abstract translation: 本发明的目的是提供一种磁阻效应元件，其具有具有自旋阀结构的膜或具有良好软磁特性的人造网格膜，并且可以应用于高灵敏度磁头。 本发明提供一种磁电阻效应元件，其包括通过依次层叠含有作为其主要成分的至少一种选自Co，Fe和Ni的元素的铁磁性膜，非磁性膜，形成在基板上的层叠膜， 铁磁膜，其中两个铁磁膜彼此不耦合，并且每个铁磁膜的最紧密的堆积平面在垂直于膜表面的方向上取向。

公开(公告)号：US5633771A

公开(公告)日：1997-05-27

申请号：US314508

申请日：1994-09-28

Applicant: Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

Inventor： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

IPC: G11B5/31 ,  G11B5/39 ,  G11B5/265 ,  G11B5/127 ,  G11B5/29 ,  G11B5/33

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/3996 ,  G11B5/3116 ,  G11B5/3163

Abstract: A magnetoresistance effect type head comprises a magnetoresistance effect film having a pair of leads connected thereto and possessing a magnetic field responding part and a pair of upper and lower shield layers having a magnetoresistance effect type head satisfies the relations, W.sub.s

Abstract translation: 磁阻效应型头包括具有连接到其上并具有磁场响应部分的一对引线的磁阻效应膜和具有磁阻效应型头的一对上下屏蔽层满足关系Ws

公开(公告)号：US5552949A

公开(公告)日：1996-09-03

申请号：US204676

申请日：1994-03-02

Applicant: Susumu Hashimoto ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Atsuhito Sawabe ,  Masashi Sahashi

Inventor： Susumu Hashimoto ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Atsuhito Sawabe ,  Masashi Sahashi

IPC: G11B5/39 ,  H01L43/08

CPC classification number: G11B5/399 ,  H01L43/08

Abstract: An exchange coupled film is presented, which has an antiferromagnetic film being made of N.sub.100-z Mn.sub.z (where N is at least one selected from the group consisting of Cu, Ru, Rh, Re, Pd, Pt, Ag, Au, Os, and Ir; and 24.ltoreq.z.ltoreq.75) and having a tetragonal crystalline structure or being made of Cr.sub.100-x M.sub.x (where M is at least one selected from the group consisting of elements of group 3b of periodic table, Cu, Ru, Rh, Re, Pt, Pd, Ag, Au, Os, Ir, Mn, Fe, Co, and V; and x is in the range of 0

Abstract translation: 提出了一种交换耦合膜，其具有由N100-zMnz（其中N是选自由Cu，Ru，Rh，Re，Pd，Pt，Ag，Au，Os和...组成的组中的至少一种）的反铁磁膜 Ir;和24 75），并且具有四方晶系结构或由Cr100-xMx（其中M是选自元素周期表第3b族元素中的至少一种，Cu，Ru ，Rh，Re，Pt，Pd，Ag，Au，Os，Ir，Mn，Fe，Co和V; x在0

公开(公告)号：US5498909A

公开(公告)日：1996-03-12

申请号：US937398

申请日：1992-08-31

Applicant: Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuhito Sawabe ,  Takashi Kawanoue ,  Yoshiko Kohanawa ,  Shuichi Komatsu

Inventor： Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuhito Sawabe ,  Takashi Kawanoue ,  Yoshiko Kohanawa ,  Shuichi Komatsu

IPC: C30B25/14 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/52 ,  H01L23/532 ,  H01L27/04 ,  H01L29/41 ,  H01L23/48 ,  H01L23/28 ,  H01L29/40

CPC classification number: H01L21/28556 ,  H01L21/32051 ,  H01L23/532 ,  H01L23/53219 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53242 ,  H01L23/53247 ,  H01L2924/0002

Abstract: The close-packed plane of a single crystal forming an electrode line such as electrodes or lines of a semiconductor device whose active regions are reduced in size, i.e., highly integrated, is arranged parallel to the longitudinal direction of the line; or in the case of a polycrystalline electrode line, the angle formed between the normal line direction of the close-packed plane of its crystal grains and that of the electrode line is arranged to be 80.degree. or less.

Abstract translation: 形成电极线的单晶的紧密平面平行于线的纵向方向布置，其中活性区域尺寸减小，即高度集成的半导体器件的电极或线路的电极线， 或者在多晶电极线的情况下，将其晶粒的紧密接合面的法线方向与电极线的法线方向之间形成的角度设定为80°以下。