公开(公告)号：US4907042A

公开(公告)日：1990-03-06

申请号：US130647

申请日：1987-12-09

Applicant: Armand Tardella ,  Thierry Weil ,  Borge Vinter

Inventor： Armand Tardella ,  Thierry Weil ,  Borge Vinter

IPC: H01L31/0264 ,  H01J1/30 ,  H01J1/308 ,  H01J1/34 ,  H01L27/14 ,  H01L27/146 ,  H01L29/86 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/107 ,  H01L31/111 ,  H01L31/153

CPC classification number: B82Y20/00 ,  H01L31/035236 ,  H01L31/1075 ,  H01L31/111 ,  H01L31/153

Abstract: A device for the multiplication of charge carriers of a given type by an avalanche phenomenon includes:a semiconductor material of homogeneous composition, placed in an electrical field.Perpendicular to the working field, plane and parallel layers which are thin as compared with the thickness of the material separating them, are made in this material and are n-doped or p-doped depending on the type of charge carrier, the said layers forming reservoirs where charge carriers of the said type are confined. The injection of at least one charge carrier of the said type in the charge carrier multiplying device sets off the multiplication of charge carriers through a process of impact ionization. This charge carrier is accelerated by the working field and thus acquires energy sufficient to make it capable of ejecting a charge carrier of the said type from the doped layer. The charge carriers obtained are guided by the working field. This impact ionization process is repeated from one layer to the next, and thus constitutes an avalanche multiplication phenomenon. The device can be applied to photosensors, photocathodes and infrared viewing devices.

Abstract translation: 用于通过雪崩现象乘法给定类型的电荷载体的装置包括：放置在电场中的均匀组成的半导体材料。 垂直于工作场，与分离它们的材料的厚度相比薄的平面和平行层在该材料中制成，并且根据电荷载体的类型是n掺杂或p掺杂的，所述层形成 所述类型的电荷载体被限制的储存器。 在电荷载体倍增装置中注入所述类型的至少一个电荷载体通过冲击电离的过程来设定载流子的乘法。 该载流子被工作场加速，从而获得足以使其能够从掺杂层喷射所述类型的电荷载体的能量。 获得的电荷载体由工作场引导。 这种冲击电离过程从一层到另一层重复，从而构成雪崩倍增现象。 该设备可应用于光电传感器，光电阴极和红外观察设备。

公开(公告)号：US4806998A

公开(公告)日：1989-02-21

申请号：US67109

申请日：1987-06-25

Applicant: Borge Vinter ,  Armand Tardella

Inventor： Borge Vinter ,  Armand Tardella

IPC: H01L29/205 ,  G11B15/44 ,  H01L21/338 ,  H01L29/772 ,  H01L29/778 ,  H01L29/812 ,  H01L29/80

CPC classification number: H01L29/7727 ,  H01L29/772 ,  H01L29/7787

Abstract: A heterojunction semiconductor device which has a dual channel with a high mobility layer, a barrier layer and a low mobility layer. The barrier layer is thin enough for the carriers to pass from the low mobility layer to the high mobility layer by tunnel effect, during variations of the polarization electrical field of the dual channel. The device can be used as field effect transistors with a quick response time, without variation in the charge of the channel but with a variation in the mobility of the carriers; or as negative transconductance devices for oscillators or complementary transistors in integrated circuits.

Abstract translation: 具有具有高迁移率层的双通道，阻挡层和低迁移率层的异质结半导体器件。 在双通道的偏振电场的变化期间，阻挡层足够薄以使载流子通过隧道效应从低迁移率层传递到高迁移率层。 该器件可以用作具有快速响应时间的场效应晶体管，而不会导致通道的电荷变化，而是载流子的迁移率的变化; 或作为用于集成电路中的振荡器或互补晶体管的负跨导器件。

公开(公告)号：US5969375A

公开(公告)日：1999-10-19

申请号：US991301

申请日：1997-12-16

Applicant: Emmanuel Rosencher ,  Borge Vinter ,  Vincent Berger ,  Daniel Kaplan ,  Fran.cedilla.ois Micheron

Inventor： Emmanuel Rosencher ,  Borge Vinter ,  Vincent Berger ,  Daniel Kaplan ,  Fran.cedilla.ois Micheron

IPC: H01L31/0264 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/0328

CPC classification number: H01L31/0352 ,  H01L31/0236 ,  Y02E10/50

Abstract: A detector with quantum structure comprising a small-gap semiconductor material inserted between two large-gap semiconductor materials, the structure comprising a coupling grating between the wave to be detected and the detector zone constituted by the small-gap material. Under these conditions, the detector zone may have a very small thickness (typically of the order of 1,000 .ANG.) and lead to a detectivity, limited by the dark current, that is high.

Abstract translation: 一种具有量子结构的检测器，包括插入在两个大间隙半导体材料之间的小间隙半导体材料，该结构包括待检测波长与由小间隙材料构成的检测区之间的耦合光栅。 在这些条件下，检测器区域可以具有非常小的厚度（通常为1,000安培数量级），并且导致由暗电流限制的高度的检测性。

公开(公告)号：US5506418A

公开(公告)日：1996-04-09

申请号：US407660

申请日：1995-03-21

Applicant: Philippe Bois ,  Emmanuel Rosencher ,  Borge Vinter ,  Jean Massies ,  Gerard Neu ,  Nicolas Grandjean

Inventor： Philippe Bois ,  Emmanuel Rosencher ,  Borge Vinter ,  Jean Massies ,  Gerard Neu ,  Nicolas Grandjean

IPC: H01L31/0352 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: B82Y20/00 ,  H01L31/035236

Abstract: An electromagnetic wave detector formed of semiconductor materials includes at least one quantum well in which there is provided a fine layer of a material with a gap width that is smaller than that of the quantum well layer. For example, in the case of a GaAlAs/GaAs/GaAlAs, there is provision for a fine layer of InAs. In this way, the difference of energy levels between the two permitted levels is increased and detection of short wavelengths may be accomplished.

Abstract translation: 由半导体材料形成的电磁波检测器包括至少一个量子阱，其中提供了具有小于量子阱层的间隙宽度的间隙宽度的材料的细小层。 例如，在GaAlAs / GaAs / GaAlAs的情况下，提供了精细的InAs层。 以这种方式，增加两个允许电平之间的能级差异，并且可以实现短波长的检测。

公开(公告)号：US5086327A

公开(公告)日：1992-02-04

申请号：US593992

申请日：1990-10-09

Applicant: Emmanuel Rosencher ,  Borge Vinter ,  Paul Bois

Inventor： Emmanuel Rosencher ,  Borge Vinter ,  Paul Bois

IPC: H01L27/144 ,  H01L31/0352

CPC classification number: B82Y20/00 ,  H01L27/1443 ,  H01L31/0352 ,  H01L31/035236

Abstract: A capacitive detector of electromagnetic waves, comprises three electron levels, wherein an internal barrier prevents a strong coupling between two levels of two neighboring wells. During an irradiation, the electrons are excited from a first level to a second level. The electrons then relax towards a third level until they relax, by tunnel effect, towards the first level. During the transition from the first level towards the third level, a dipole is created. This dipole can be detected by a detector, through the measurement of a potential difference at the terminals of the device.

Abstract translation: 电磁波的电容检测器包括三个电子水平，其中内部屏障防止两个相邻孔的两个水平面之间的强耦合。 在照射期间，电子从第一电平激发到第二电平。 然后电子向第三级放松，直到通过隧道效应放松至第一级。 在从第一级到第三级的过渡期间，产生偶极子。 通过测量器件端子上的电位差可以由检测器检测该偶极子。

公开(公告)号：US5311221A

公开(公告)日：1994-05-10

申请号：US364680

申请日：1989-05-11

Applicant: Nakita Vodjdani ,  Claude Weisbuch ,  Borge Vinter ,  Julien Nagle ,  Michel Papuchon ,  Jean-Paul Pocholle ,  Dominique Delacourt

Inventor： Nakita Vodjdani ,  Claude Weisbuch ,  Borge Vinter ,  Julien Nagle ,  Michel Papuchon ,  Jean-Paul Pocholle ,  Dominique Delacourt

IPC: G02F1/017 ,  G02F3/00 ,  H01L31/0352 ,  G02B6/10 ,  H01L33/00 ,  G02B5/14

CPC classification number: B82Y20/00 ,  G02F1/01716 ,  G02F3/00 ,  H01L31/035236 ,  G02F1/01708

Abstract: A semi-conducting structure delimits two quantal wells (CP1, CP2) connected across a barrier layer (CB). The application of an electric field to the structure makes possible the transfer of electrons from one of the wells to the other. The electron-hole pairs are created by a wave-pump, or by the doping of one of the wells. This makes possible, in particular, a dual control by means of the wave-pump and the electric field, thus creating an "AND"-function modulator.

Abstract translation: 半导电结构限定跨越阻挡层（CB）连接的两个量子阱（CP1，CP2）。 电场对结构的应用使电子从一个孔传递到另一个井成为可能。 电子 - 空穴对由波泵产生，或通过掺杂其中一个孔产生。 这使得能够特别地通过波泵和电场进行双重控制，从而产生“和”功能的调制器。

公开(公告)号：US5187715A

公开(公告)日：1993-02-16

申请号：US620041

申请日：1990-11-30

Applicant: Claude Weisbuch ,  Philippe Bois ,  Borge Vinter

Inventor： Claude Weisbuch ,  Philippe Bois ,  Borge Vinter

IPC: G02B6/13 ,  G02F1/015 ,  G02F1/017 ,  G02F1/025 ,  G02F1/35 ,  G02F1/355 ,  H01L21/20 ,  H01L27/14 ,  H01L29/06 ,  H01L31/0352 ,  H01L33/00 ,  H01S3/06 ,  H01S3/08 ,  H01S3/094 ,  H01S5/00 ,  H01S5/042 ,  H01S5/34

CPC classification number: H01S5/34 ,  B82Y20/00 ,  G02F1/017 ,  G02F1/01716 ,  G02F1/3556 ,  H01L31/0352 ,  G02F1/01708 ,  G02F2001/0153 ,  G02F2001/0157 ,  G02F2001/01775 ,  G02F2001/01783 ,  G02F2001/01791 ,  H01S5/3415 ,  H01S5/3416

Abstract: A quantum well optical device including a layer of semiconducting material of large forbidden band width and, situated in this layer, at least one quantum well, such as a quantum line or quantum hole, of a material having a narrower forbidden band than that of the layer. This quantum well has two permitted electron levels. Means exist of assuring the electron population of the first permitted energy level.

Abstract translation: 一种量子阱光学器件，包括具有大禁带宽度的半导体材料层，并且位于该层中的至少一个量子阱，例如量子线或量子阱，具有比 层。 该量子阱具有两个允许的电子水平。 存在确保第一允许能级的电子群体的手段。

公开(公告)号：US4722907A

公开(公告)日：1988-02-02

申请号：US871970

申请日：1986-06-09

Applicant: Thierry Weil ,  Borge Vinter

Inventor： Thierry Weil ,  Borge Vinter

IPC: H01L29/15 ,  H01L29/43 ,  H01L31/107 ,  H01L29/167 ,  H01L27/14 ,  H01L29/90

CPC classification number: H01L29/432 ,  H01L29/155 ,  H01L31/1075

Abstract: An avalanche photodetector of the heterojunction type comprises an intermediate region between two end regions made from distinct semiconductor materials. The intermediate region comprises a lattice of slices of varying thicknesses of alternating layers of the material of the end regions thus forming a system of coupled quantum wells whose thicknesses and whose number of slices are determined so that the response time of the photodetector is less than a maximum given time, while maintaining the number of coupled quantum wells to a minimum.

Abstract translation: 异质结型的雪崩光电探测器包括由不同的半导体材料制成的两个端部区域之间的中间区域。 中间区域包括端部区域的材料的交替层的变化厚度的切片的格子，从而形成耦合的量子阱的系统，其厚度和片数的数目被确定为使得光电检测器的响应时间小于 最大给定时间，同时将耦合量子阱的数量保持在最小值。

公开(公告)号：US5432362A

公开(公告)日：1995-07-11

申请号：US180795

申请日：1994-01-10

Applicant: Didier Lippens ,  Borge Vinter

Inventor： Didier Lippens ,  Borge Vinter

IPC: H01L29/06 ,  H01L29/68 ,  H01L29/76 ,  H01L49/02

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01L29/7606

Abstract: The invention is a resonant tunnel effect quantum well transistor. To improve the gain by avoiding the storage of charges in the well, which consists of layer (14) with a narrow forbidden band and two barriers (13, 15) with a wide forbidden band, the quantum well is laterally bounded--in the plane of the layers--by a depleted region (22) which forms a quantum box whose dimensions are smaller than the De Broglie wavelength. Application to fast electronics (200 GHz).

Abstract translation: 本发明是谐振隧道效应量子阱晶体管。 为了通过避免阱中的电荷的存储来改善增益，该阱由具有窄禁带的层（14）和具有宽禁带的两个阻挡层（13,15）组成，量子阱横向界定在平面内 通过形成尺寸小于德布罗意波长的量子盒的耗尽区（22）。 应用于快速电子（200 GHz）。