公开(公告)号：US08357924B2

公开(公告)日：2013-01-22

申请号：US12983499

申请日：2011-01-03

申请人： Kwang Joong Kim ,  Chang Suk Han ,  Kyung Hee Ye ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

发明人： Kwang Joong Kim ,  Chang Suk Han ,  Kyung Hee Ye ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

IPC分类号： H01L31/00

CPC分类号： H01L33/06 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L33/32

摘要： Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

公开(公告)号：US07755176B1

公开(公告)日：2010-07-13

申请号：US11111316

申请日：2005-04-21

申请人： Roger D. St. Amand ,  Chang Suk Han ,  Alexander W. Copia ,  Wan Wook Ko

发明人： Roger D. St. Amand ,  Chang Suk Han ,  Alexander W. Copia ,  Wan Wook Ko

IPC分类号： H01L23/02

CPC分类号： H01L23/49838 ,  H01L23/3128 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/32057 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48699 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A die-mounting substrate and method incorporating dummy traces for improving mounting film planarity makes the use of film attach possible with a simplified manufacturing process and in applications where film-attach was not previously practical. The die-mounting substrate includes dummy traces that are generated along with signal traces extending into the die mounting area of the substrate. The dummy traces are designed according to the same design rules as the signal traces and are disposed in otherwise empty regions between signal traces and vias within the die mounting area. The result is die mounting area without regions empty of signal traces that previously either lack conductor or are filled completely with conductor, either of which will result in surface variation that compromises the film bond.

摘要翻译： 具有用于改善安装膜平面性的虚设轨迹的芯片安装基板和方法使得可以利用简化的制造工艺和薄膜附着在以前不可行的应用中使用膜附着。 管芯安装衬底包括与延伸到衬底的管芯安装区域中的信号迹线一起产生的虚拟迹线。 虚设轨迹根据与信号迹线相同的设计规则设计，并且设置在信号迹线和管芯安装区域内的通孔之间的空白区域中。 结果是裸片安装区域没有空的信号迹线，以前没有导体或完全填充导体，其中任何一个将导致表面变化，从而影响膜结合。

公开(公告)号：US20090291519A1

公开(公告)日：2009-11-26

申请号：US12535244

申请日：2009-08-04

申请人： Gyu Beom KIM ,  Sang Joon Lee ,  Chang Suk Han ,  Kwang Choong Kim

发明人： Gyu Beom KIM ,  Sang Joon Lee ,  Chang Suk Han ,  Kwang Choong Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/3063 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04

摘要： Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.

摘要翻译： 本文公开了一种发光器件。 发光器件包括n型氮化物半导体层; 在n型半导体层上的有源层，通过在有源层上交替生长AlN层和GaN层而形成的超晶格结构的AlN / GaN层和AlN / GaN上的p型氮化物半导体层 层的超晶格结构。 AlN层和GaN层中的至少一个掺杂有p型掺杂剂。 还提供了一种用于制造发光器件的方法。

公开(公告)号：US20170348582A1

公开(公告)日：2017-12-07

申请号：US15537944

申请日：2016-01-15

申请人： Byoung Koo CHO ,  Chang Suk HAN ,  Chang Hee CHUN

发明人： Byoung Koo CHO ,  Chang Suk HAN ,  Chang Hee CHUN

IPC分类号： A63B69/40 ,  A63B47/02 ,  A63B63/08 ,  A63B69/00 ,  A63B71/06 ,  A63B61/00

CPC分类号： A63B69/40 ,  A63B24/00 ,  A63B47/002 ,  A63B47/02 ,  A63B47/021 ,  A63B47/025 ,  A63B61/003 ,  A63B63/004 ,  A63B63/083 ,  A63B69/002 ,  A63B69/0071 ,  A63B69/0095 ,  A63B69/409 ,  A63B71/02 ,  A63B71/023 ,  A63B71/0669 ,  A63B2024/0025 ,  A63B2024/004 ,  A63B2071/025 ,  A63B2207/02 ,  A63B2220/10 ,  A63B2220/30 ,  A63B2220/805 ,  A63B2220/807 ,  A63B2220/833 ,  A63B2225/09

摘要： A ball supply apparatus includes: a housing coupled to the upper portion of the column structure, wherein a top portion of housing is partially opened, wherein the housing is divided by a partition into a ball storage portion and a ball discharge portion, wherein a bottom face of the ball storage portion is inclined downward toward the ball discharge portion, wherein a first opening is formed in a bottom of the ball discharge portion, and a second opening is formed in the partition at a lower portion thereof; a rotatable opening/closing plate rotatably coupled to the partition, wherein the rotatable opening/closing plate is configured to rotate to open/close the second opening; and a ball discharge tube rotatably coupled to the ball discharge portion at the first opening, wherein the ball discharge tube ball-communicates with the ball discharge portion via the first opening.

公开(公告)号：US20100084749A1

公开(公告)日：2010-04-08

申请号：US12285346

申请日：2008-10-02

申请人： Young-Moon Hong ,  Chang-Suk Han ,  Chang-Won Park

发明人： Young-Moon Hong ,  Chang-Suk Han ,  Chang-Won Park

IPC分类号： H01L23/495 ,  H01L21/56

CPC分类号： H01L23/49548 ,  H01L23/49572 ,  H01L23/49582 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A package and a fabricating method thereof are provided. The package includes a lead frame, a chip and a sealant. The lead frame has a notch and a plurality of first notch-side leads, a plurality of first notch-side pads, a plurality of second notch-side leads and a plurality of second notch-side pads. The first notch-side leads extend to a first side of the notch. The first notch-side pads are correspondingly disposed on the first notch-side leads. The second notch-side leads extend to a second side of the notch. The second notch-side pads are correspondingly disposed on the second notch-side leads. The sealant seals up the chip and the lead frame and exposes a lower surface of the lead frame. The notch exposes a portion of the sealant.

摘要翻译： 提供了一种封装及其制造方法。 封装包括引线框架，芯片和密封剂。 引线框架具有凹口和多个第一切口侧引线，多个第一切口侧焊盘，多个第二切口侧引线和多个第二切口侧焊盘。 第一缺口侧引线延伸到凹口的第一侧。 第一切口侧焊盘相应地设置在第一切口侧引线上。 第二缺口侧引线延伸到凹口的第二侧。 第二切口侧焊盘相应地设置在第二切口侧引线上。 密封剂密封芯片和引线框架并暴露引线框架的下表面。 切口露出一部分密封剂。

公开(公告)号：US10806990B2

公开(公告)日：2020-10-20

申请号：US16028613

申请日：2018-07-06

申请人： Byoung Koo Cho ,  Chang Suk Han ,  Chang Hee Chun ,  Bo Sub Kim ,  Yeon Uk Jeong

发明人： Byoung Koo Cho ,  Chang Suk Han ,  Chang Hee Chun ,  Bo Sub Kim ,  Yeon Uk Jeong

IPC分类号： A63C19/02

摘要： The present invention relates to an inclined structure of a court floor having a new structure for easily collecting automatically supplying balls used in practice. According to an inclined structure of a court floor according to the present disclosure, the ball used for practice can be rolled down outwardly along the slope of the court, and then be collected in the collecting ditch and gathered in one place, so there is no need to collect scattered balls separately.

公开(公告)号：US20120037881A1

公开(公告)日：2012-02-16

申请号：US12983499

申请日：2011-01-03

申请人： Kwang Joong KIM ,  Chang Suk HAN ,  Kyung Hee YE ,  Seung Kyu CHOI ,  Ki Bum NAM ,  Nam Yoon KIM ,  Kyung Hae KIM ,  Ju Hyung YOON

发明人： Kwang Joong KIM ,  Chang Suk HAN ,  Kyung Hee YE ,  Seung Kyu CHOI ,  Ki Bum NAM ,  Nam Yoon KIM ,  Kyung Hae KIM ,  Ju Hyung YOON

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L33/32

摘要： Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

摘要翻译： 本发明的示例性实施例公开了一种发光二极管，其包括掺杂有硅的n型接触层，p型接触层，设置在n型接触层和p型接触层之间的有源区，超晶格 所述超晶格层包括多个层，设置在所述超晶格层和所述n型接触层之间的未掺杂的中间层以及设置在所述未掺杂的中间层之间的电子增强层 层和超晶格层。 最靠近有源区的超晶格层的最终层被掺杂硅，并且最终层的硅掺杂浓度高于n型接触层的掺杂浓度。

公开(公告)号：US20100216272A1

公开(公告)日：2010-08-26

申请号：US12775119

申请日：2010-05-06

申请人： Gyu Beom Kim ,  Sang Joon Lee ,  Chang Suk Han ,  Kwang Choong Kim

发明人： Gyu Beom Kim ,  Sang Joon Lee ,  Chang Suk Han ,  Kwang Choong Kim

IPC分类号： H01L21/20

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/3063 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04

摘要： Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.

摘要翻译： 本文公开了一种发光器件。 发光器件包括n型氮化物半导体层; 在n型半导体层上的有源层，通过在有源层上交替生长AlN层和GaN层而形成的超晶格结构的AlN / GaN层和AlN / GaN上的p型氮化物半导体层 层的超晶格结构。 AlN层和GaN层中的至少一个掺杂有p型掺杂剂。 还提供了一种用于制造发光器件的方法。

公开(公告)号：US20200009448A1

公开(公告)日：2020-01-09

申请号：US16028613

申请日：2018-07-06

申请人： Byoung Koo CHO ,  Chang Suk HAN ,  Chang Hee CHUN ,  Bo Sub KIM ,  Yeon Uk JEONG

发明人： Byoung Koo CHO ,  Chang Suk HAN ,  Chang Hee CHUN ,  Bo Sub KIM ,  Yeon Uk JEONG

IPC分类号： A63C19/02

摘要： The present invention relates to an inclined structure of a court floor having a new structure for easily collecting automatically supplying balls used in practice. According to an inclined structure of a court floor according to the present disclosure, the ball used for practice can be rolled down outwardly along the slope of the court, and then be collected in the collecting ditch and gathered in one place, so there is no need to collect scattered balls separately.

公开(公告)号：US08716048B2

公开(公告)日：2014-05-06

申请号：US12775119

申请日：2010-05-06

申请人： Gyu Beom Kim ,  Sang Joon Lee ,  Chang Suk Han ,  Kwang Choong Kim

发明人： Gyu Beom Kim ,  Sang Joon Lee ,  Chang Suk Han ,  Kwang Choong Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/3063 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04

摘要： Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.

摘要翻译： 本文公开了一种发光器件。 发光器件包括n型氮化物半导体层; 在n型半导体层上的有源层，通过在有源层上交替生长AlN层和GaN层而形成的超晶格结构的AlN / GaN层和AlN / GaN上的p型氮化物半导体层 层的超晶格结构。 AlN层和GaN层中的至少一个掺杂有p型掺杂剂。 还提供了一种用于制造发光器件的方法。